Abstract: A TSV structure includes a substrate. A through via penetrates the substrate. A copper layer fills the through via. A trench is embedded in the substrate and surrounds the copper layer, and a material layer fills the trench. The material layer includes W, Cr, Ir, Re, Zr, SiOC glass, hydrogen-containing silicon oxynitride, silicon oxide or spin-on glass.

Abstract: An optical-fiber connector includes a first metal housing, a second metal housing, and a plurality of coupling components, where the first metal housing and the second metal housing are assembled with each other. The first metal housing has a receiving space. Two ends of the first metal housing respectively include a plurality of first mating portions and a first tail cap assembling portion. Two ends of the second metal housing respectively include a plurality of second mating portions corresponding to the first mating portions and a second tail cap assembling portion assembled with the first tail cap assembling portion. Each of the coupling components includes a coupling body and a metal stopping member. Each of the coupling bodies has a positioning portion. Each of the positioning portions is assembled with a corresponding one of the first mating portions and a corresponding one of the second mating portions.

Abstract: A standard connector comprises an optical-fiber sleeve member, a fixation member, a spring, a connector body, a retaining member, a fixation sleeve, and a coupling cap. The optical-fiber sleeve member is connected to one end of the fixation member. The spring is fitted over the fixation member. The connector body is fitted over the fixation member and the spring. The connector body has a plurality of first engaging portions. The retaining member is fitted over the optical-fiber sleeve member and engaged with the connector body. The fixation member has a mating opening. An inner wall of the mating opening has a plurality of mating portions. The fixation sleeve is fitted over the optical-fiber sleeve member, the fixation member, and the connector body. Each of the mating portions is engaged with a corresponding one of the first engaging portions. The coupling cap is fitted over the fixation sleeve.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region, a first gate pattern extending from the first cell region to the third cell region along a first direction, a first diffusion region extending from the first cell region to the second cell region along a second direction, a first metal pattern adjacent to one side of the first gate pattern and overlapping the first diffusion region, a source line pattern extending from the first cell region to the second cell region along the second direction, and a first spin orbit torque (SOT) pattern extending along the first direction and overlapping the first metal pattern and the source line pattern.

Abstract: A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a magnetic tunneling junction (MTJ) on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes metal and the blocking layer includes a grid line pattern according to a top view.

Abstract: An optical-fiber adapter includes a base member and a door piece. The base member has a receiving groove and an insertion opening and includes a doorstop portion. The insertion opening is in communication with the receiving groove, and the doorstop portion is at a bottom portion of the insertion opening. The door piece is in the receiving groove to selectively close or open the insertion opening. Each of two sides of the door piece has a pivot portion, each of the pivot portions is adjacent to the doorstop portion and pivotally connected to a corresponding one of two side walls of the base member, and an outer surface of the door piece includes a protrusion adjacent to the doorstop portion. When the optical-fiber plug is inserted into the receiving groove of the optical-fiber adapter, the protrusion abuts against the bottom surface of the connection body of the optical-fiber plug.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region, a first gate pattern extending from the first cell region to the third cell region along a first direction, a first diffusion region extending from the first cell region to the second cell region along a second direction, a first metal pattern adjacent to one side of the first gate pattern and overlapping the first diffusion region, a source line pattern extending from the first cell region to the second cell region along the second direction, and a first spin orbit torque (SOT) pattern extending along the first direction and overlapping the first metal pattern and the source line pattern.

Abstract: An optical-fiber connector with protective cap includes a connector body and a retaining member which are fitted over an optical-fiber sleeve member, a fixation member, and a spring. The protective cap is fitted over the retaining member and the connector body. Each second engaging portion of the protective cap is engaged with a corresponding first engaging portion of the connector body. After the protective cap draws the optical-fiber connector to pass through a guiding pipeline, the protective cap is removed, and the optical-fiber connector is assembled with a fixation sleeve and a coupling cap to form a standard connector.

Abstract: A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a MTJ on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes a stripe pattern according to a top view and the blocking layer could include metal or a dielectric layer.

Abstract: The invention provides a semiconductor structure, which comprises a plurality of magnetic tunnel junction (MTJ) elements. Seen from a top view, the MTJ elements are arranged in an array, at least one second contact structure is located in the array arranged by the MTJ elements, and at least one first mask layer covers a top surface and two sidewalls of each MTJ element, when seen from a cross-sectional view, a sidewall of the first mask layer is aligned with a sidewall of a second metal layer which is disposed below the second contact structure.

Abstract: Provided is a semiconductor device including a substrate, a first interconnection structure, and an MTJ device. The first interconnection structure is disposed on the substrate. The MTJ device is reversely bonded to the first interconnection structure. The MTJ device includes a first electrode layer, a second electrode layer and an MTJ stack structure. The first electrode layer is bonded to the first interconnect structure. The second electrode layer is located above the first electrode layer. The MTJ stack structure is located between the first and second electrode layers. The MTJ stack structure includes a first barrier layer, a free layer and a reference layer. The first barrier layer is located between the first and second electrode layers. The free layer is located between the first barrier layer and the first electrode layer. The reference layer is located between the first barrier layer and the second electrode layer.

Abstract: The invention provides a semiconductor layout pattern, which comprises a first metal layer, wherein the first metal layer comprises a plurality of first patterns and a plurality of fishbone line patterns arranged on the same layer, wherein each fishbone line pattern comprises a principal axis pattern extending along a first direction and a plurality of branches arranged along a second direction, and each first pattern is located between two adjacent branches and the principal axis pattern, and a second metal layer is located on the first metal layer. A plurality of magnetic tunnel junction (MTJ) elements located on the second metal layer, wherein each magnetic tunnel junction element is arranged in a rhombic shape.

Abstract: The present invention provides a semiconductor device, the semiconductor device includes a metal interconnection on a substrate, in which a top view of the metal interconnection comprises a quadrilateral; and a magnetic tunneling junction (MTJ) on the metal interconnection, in which a top view of the MTJ comprises a circular shape.

Abstract: The present invention provides a semiconductor device, the semiconductor device includes a metal interconnection on a substrate, in which a top view of the metal interconnection comprises a quadrilateral; and a magnetic tunneling junction (MTJ) on the metal interconnection, in which a top view of the MTJ comprises a circular shape, an area of the MTJ is smaller than an area of the metal interconnection.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region, a first gate pattern extending from the first cell region to the third cell region along a first direction, a first diffusion region extending from the first cell region to the second cell region along a second direction, a first metal pattern adjacent to one side of the first gate pattern and overlapping the first diffusion region, a source line pattern extending from the first cell region to the second cell region along the second direction, and a first spin orbit torque (SOT) pattern extending along the first direction and overlapping the first metal pattern and the source line pattern.

Abstract: An optical-fiber connector includes a coupling member, a core component, a sleeve member, a metal retaining member, and a pressing member. The core component is in the receiving space. The metal retaining member is connected to one of two ends of the coupling member. The elastic arm of the metal retaining member inclinedly extends toward the other end of the coupling member. Two sides of the elastic arm have a plurality of retaining structures. The sleeve member is at the other end of the coupling member and is connected to the pressing member. The pressing portion of the pressing member extends toward the elastic arm. The metal retaining member is adapted to be buckled with an adapter, so that the service life of the optical-fiber connector can be prolonged.

Abstract: A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a MTJ on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes a stripe pattern according to a top view and the blocking layer could include metal or a dielectric layer.

Abstract: An optical-fiber connector includes a coupling member, a core component, a sleeve member, a metal retaining member, and a pressing member. The core component is in the receiving space. The metal retaining member is connected to one of two ends of the coupling member. The elastic arm of the metal retaining member inclinedly extends toward the other end of the coupling member. Two sides of the elastic arm have a plurality of retaining structures. The sleeve member is at the other end of the coupling member and is connected to the pressing member. The pressing portion of the pressing member extends toward the elastic arm. The metal retaining member is adapted to be buckled with an adapter, so that the service life of the optical-fiber connector can be prolonged.