Abstract: Methods and apparatus for preparing data for encrypted transmission. According to the current invention, a data bitstream may be processed to create side information. After extracting, generating and/or acquiring the side data, some or all of the data bitstream may be encrypted and then combined to create a combined data bitstream, ready for transmission. Subsequently, the combined data bitstream may be transmitted over a network. By processing a data bitstream to extract metadata about the bitstream before encrypting the data, some processing such as splicing, bit rate switching and/or statistical multiplexing done after encryption may be executed without requiring costly de-encryption/re-encryption steps based, in part, on inspecting the contents of the side data. The bitstream may represent video, audio, image or other data types. In some examples according to the current invention, a combined data bitstream may comprise multiple bitstreams, each at a different bit rate.

Abstract: We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.

Abstract: Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.

Abstract: The present invention provides a pharmaceutical composition containing proteoglycan extracts of algae and a process for preparing proteoglycan extracts from the algae.

Abstract: The invention relates to pseudolaric acid-B derivatives of general formula (I), wherein (a) R1 is cyano, heterocyclyl, COXR? or CON(R?)2, wherein X is O or NH, R? is H, cycloalkyl, alkyl, heterocyclic alkyl or arylalkyl, each R? is independently alkyl, cycloalkyl or heterocyclicalkyl; (b) R2 is H, alkylacyl, arylalkylacyl, arylacyl or heterocyclylacyl; (c) R3 is COXY, amino or halogen, wherein X is O or NH, Y is H, NH2, hydroxy, alkyl, cycloalkyl, heterocyclicalkyl, hetroatom-substituted alkyl, tertiary amino-substituted ammonioalkyl, aryl, arylalkyl or polyhydroxyalkyl. The invention also relates to processes for preparing such derivatives and antitumor or antifungal pharmaceutical compositions containing the same.

Abstract: The invention relates to pseudolaric acid-B derivatives of general formula (I), wherein (a) R1 is cyano, heterocyclyl, COXR′ or CON(R′)2, wherein X is O or NH, R′ is H, cycloalkyl, alkyl, heterocyclic alkyl or arylalkyl, each R″ is independently alkyl, cycloalkyl or heterocyclicalkyl; (b) R2 is H, alkylacyl, arylalkylacyl, arylacyl or heterocyclylacyl; (c) R3 is COXY, amino or halogen, wherein X is O or NH, Y is H, NH2, hydroxy, alkyl, cycloalkyl, heterocyclicalkyl, hetroatom-substituted alkyl, tertiary amino-substituted ammonioalkyl, aryl, arylalkyl or polyhydroxyalkyl. The invention also relates to processes for preparing such derivatives and antitumor or antifungal pharmaceutical compositions containing the same.

Abstract: A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled.

Abstract: The present invention relates to multiblock interpolymers having the following symmetric structures and processes for their preparation: Y-X-Y, wherein Y represents a block of a random copolymer of conjugated diene and monovinyl aromatic monomer; and X represents a block of butadiene homopolymer, a block of isoprene homopolymer, or a block of butadiene/isoprene copolymer, and processes for the preparation thereof. The present multiblock interpolymers have in the same molecule both a rubber block of random copolymer of conjugated diene and monovinyl aromatic monomer and a rubber block selected from blocks of butadiene homopolymer, isoprene homopolymer and butadiene/isoprene copolymers, and hence possess excellent properties of the both two kinds of rubbers, and can be used widely as integrated rubber materials with excellent property balance, the present processes can simply prepare the above integrated rubber material in situ in a single reactor.

Abstract: The present invention provides a substrate having a polymerized, polysaccharide-based hydrogel attached to the surface. The hydrogel can be derivatized with binding functionalities that bind analytes from a sample. The invention further provides methods of using the device and gels that are capable of selectively binding one or more analytes from a sample.

Abstract: The present invention relates to multiblock interpolymers having the following symmetric structures and processes for their preparation: Y-X-Y, wherein Y represents a block of a random copolymer of conjugated diene and monovinyl aromatic monomer; and X represents a block of butadiene homopolymer, a block of isoprene homopolymer, or a block of butadiene/isoprene copolymer, and processes for the preparation thereof. The present multiblock interpolymers have in the same molecule both a rubber block of random copolymer of conjugated diene and monovinyl aromatic monomer and a rubber block selected from blocks of butadiene homopolymer, isoprene homopolymer and butadiene/isoprene copolymers, and hence possess excellent properties of the both two kinds of rubbers, and can be used widely as integrated rubber materials with excellent property balance, the present processes can simply prepare the above integrated rubber material in situ in a single reactor.

Abstract: A process for etching a dielectric layer with an underlying stop layer, particularly in a counterbore process for a dual-damascene interconnect structure. The substrate is formed with a lower stop layer, a lower dielectric layer, an upper stop layer, and an upper dielectric layer. The initial deep via etch includes at least two substeps. A first substep includes a non-selective etch through the upper stop layer followed by a second substep of selectively etching through the lower dielectric layer and stopping on the lower stop layer. The first substep may be preceded by yet another substep including a selective etch part ways through the upper dielectric layer. For the oxide/nitride compositions, the selective etch is based on a fluorocarbon and argon chemistry, preferably with a lean etchant combined with a richer polymer former, and the non-selective etch includes a fluorocarbon or hydrofluorocarbon, argon and an oxygen-containing gas, such as CO.

Abstract: A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled.

Abstract: A dielectric etch process applicable etching a dielectric layer with an underlying stop layer. It is particularly though not necessarily applicable to forming a dual-damascene interconnect structure by a counterbore process, in which a deep via is etched prior to the formation of a trench connecting two of more vias. A single metallization fills the dual-damascene structure. The substrate is formed with a lower stop layer, a lower dielectric layer, an upper stop layer, and an upper dielectric layer. For example, the dielectric layers may be silicon dioxide, and the stop layers, silicon nitride. The initial deep via etch includes at least two substeps. A first substep includes a non-selective etch through the upper stop layer followed by a second substep of selectively etching through the lower dielectric layer and stopping on the lower stop layer. The first substep may be preceded by yet another substep including a selective etch part ways through the upper dielectric layer.

Abstract: An integrated in situ oxide etch process particularly useful for a counterbore dual-damascene structure over copper having in one inter-layer dielectric level a lower nitride stop layer, a lower oxide dielectric, a lower nitride stop layer, an upper oxide dielectric layer, and an anti-reflective coating (ARC). The process is divided into a counterbore etch and a trench etch with photolithography for each, and each step is preferably performed in a high-density plasma reactor having an inductively coupled plasma source primarily generating the plasma and a capacitively coupled pedestal supporting the wafer and producing the bias power. The counterbore etch preferably includes at least four substeps of opening the ARC, etching through the upper oxide and nitride layers, selectively etching the lower oxide layer but stopping on the lower nitride layer, and a post-etch treatment for removing residue.

Abstract: A plasma etch process, particularly applicable to an self-aligned contact etch in a high-density plasma for selectively etching oxide over nitride, although selectivity to silicon is also achieved. In the process, a fluoropropane or a fluoropropylene is a principal etching gas in the presence of a substantial amount of an inactive gas such as argon. Good nitride selectivity has been achieved with hexafluoropropylene (C3F6), octafluoropropane (C3F8), heptafluoropropane (C3HF7), hexafluoropropane (C3H2F6). The process may use one or more of the these gases in proportions to optimize selectivity and a wide process window. Difluoromethane (CH2F2) or other fluorocarbons may be combined with the above gases, particularly with C3F6 for optimum selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.

Abstract: A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled.

Abstract: An integrated self aligned contact process includes oxide etch with high oxide etch rate, integrated selective oxide etch and nitride liner removal with high selectivity to corner nitride with the ability to remove the bottom nitride liner, and stripping of all polymer and photoresist. C4F8 and CH2F2 are used for the high selectivity oxide etch step. The unique behavior of CH2F2 in high density plasma allows polymer protection to form on the nitride corner/sidewall while at the same time etching the bottom nitride.

Abstract: The invention relates to compound of the general formula (I): R—O—A  (I) wherein: R represents the radical of formula (II): A is as defined in the description, and medicinal products containing the same which are useful in treating or in preventing cancer.

Abstract: A plasma etching process for etching a carbon-based low-k dielectric layer in a multi-layer inter-level dielectric. The low-k dielectric may be divinyl siloxane-benzocyclobutene (BCB), which contains about 4% silicon, the remainder being carbon, hydrogen, and a little oxygen. The BCB etch uses an etching gas of oxygen, a fluorocarbon, and nitrogen and no argon. An N2/O2 ratio of between 1:1 and 3:1 produces vertical walls in the BCB. In a dual-damascene structure, the inter-level dielectric includes two BCB layers, each underlaid by a respective stop layer. Photolithography with an organic photoresist needs a hard mask of silicon oxide or nitride over the upper BCB layer. After the BCB etch has cleared all the photoresist, the bias power applied to the cathode supporting the wafer needs to be set to a low value while the separately controlled plasma source power is set reasonably high, thereby reducing faceting of the exposed hard mask.

Abstract: An integrated in situ oxide etch process particularly useful for a counterbore dual-damascene structure over copper having in one inter-layer dielectric level a lower nitride stop layer, a lower oxide dielectric, a lower nitride stop layer, an upper oxide dielectric layer, and an anti-reflective coating (ARC). The process is divided into a counterbore etch and a trench etch with photolithography for each, and each step is preferably performed in a high-density plasma reactor having an inductively coupled plasma source primarily generating the plasma and a capacitively coupled pedestal supporting the wafer and producing the bias power. The counterbore etch preferably includes at least four substeps of opening the ARC, etching through the upper oxide and nitride layers, selectively etching the lower oxide layer but stopping on the lower nitride layer, and a post-etch treatment for removing residue.