Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, an aerial user equipment (UE) may measure a first offset associated with a downlink frame based at least in part on a time when a downlink signal is received from a terrestrial base station. The aerial UE may determine a second offset corresponding to a starting time for the downlink frame at the terrestrial base station. The aerial UE may transmit an uplink message in an uplink frame using a timing advance that is based at least in part on a value of the first offset and a value of the second offset relative to a starting time associated with a global navigation satellite system frame duration. Numerous other aspects are described.

Abstract: A light emitting diode device includes a substrate, a conductive via, first and second conductive pads, a driving chip, a flat layer, a redistribution layer, a light emitting diode, and an encapsulating layer. The substrate has a first surface and a second surface opposite thereto. The conductive via penetrates from the first surface to the second surface. The first and second conductive pads are respectively disposed on the first and second surface and in contact with the conductive via. The driving chip is disposed on the first surface. The flat layer is disposed over the first surface and covers the driving chip and the first conductive pad. The redistribution layer is disposed on the flat layer and electrically connects to the driving chip. The light emitting diode is flip-chip bonded to the redistribution layer. The encapsulating layer covers the redistribution layer and the light emitting diode.

Abstract: An electronic package includes an electronic component and a heat dissipation structure, wherein the heat dissipation structure has a plurality of bonding pillars, and a metal layer is formed on the bonding pillars, so as to stably dispose the heat dissipation structure on the electronic component via the bonding pillars and the metal layer.

Abstract: The present disclosure discloses a method for automatically identifying south troughs by improved Laplace and relates to the technical field of meteorology. The method includes the following steps: acquiring grid data of a geopotential height field; calculating a gradient field of the geopotential height field in an x direction; searching for a turning point where a gradient value turned from being negative to being positive, and cleaning the gradient field; calculating a divergence of the x direction to obtain an improved Laplacian numerical value L?; performing 0,1 binarization processing on the L? to obtain a black-and-white image and a plurality of targets of potential troughs, merging the black-and-white image and the plurality of targets of the potential troughs by expansion, recovering original scale through erosion, and selecting an effective target through an angle of direction of a contour and an axial ratio.

Abstract: The present disclosure relates to an operating table, the operating table comprising a table top, a table top support and a column with a column head, wherein the sealing device is bellows assembled below the column head, or an adhesive in a hole and/or window on the holder of the cable, or a sealing gasket between the receiver and the column head, or a shield sealingly attached to the column head below the gear. The present disclosure further relates to control equipment, a lifting device, an intelligent charger, a column guide system for an operating table, as well as an operating table including the same.

Abstract: A fastener is adapted for assembling a first housing to a second housing. The first housing is provided with a protruding portion and a buckling portion, and the second housing has a first surface, a second surface, and a through hole. The fastener includes a first portion, at least one connecting portion, at least two elastic portions, and a second portion. The first portion movably abuts against the first surface and has a first opening. The connecting portion is accommodated in the through hole. One end of the connecting portion is connected to the first portion. The connecting portion is spaced apart from an inner edge of the second housing by a gap. The two elastic portions inclinedly extend into the first opening. The second portion movably abuts against the second surface and is disposed at the another end of the connecting portion.

Abstract: A method for cleaning a water filtration membrane, the method having at least an alkaline cleaning step, wherein the method includes a first enzyme solution comprising a polypeptide having carbohydrase activity, and a second enzyme solution comprising a polypeptide having protease activity.

Abstract: The light emitting diode packaging structure includes a flexible substrate, a first adhesive layer, micro light emitting elements, a conductive pad, a redistribution layer, and an electrode pad. The first adhesive layer is disposed on the flexible substrate. The micro light emitting elements are disposed on the first adhesive layer and have a first surface facing to the first adhesive layer and an opposing second surface. The micro light emitting elements include a red micro light emitting element, a blue micro light emitting element, and a green micro light emitting element. The conductive pad is disposed on the second surface of the micro light emitting element. The redistribution layer covers the micro light emitting elements and the conductive pad. The electrode pad is disposed on the redistribution layer and is electrically connected to the circuit layer. A thickness of the flexible substrate is less than 100 um.

Abstract: Methods and systems for techniques for determining control message formats in wireless networks are disclosed. In an implementation, a method of wireless communication includes determining, by a wireless device, a size of control messages on scheduling cells for which the wireless device is configured to monitor control channels for a scheduled cell, wherein the scheduling cells include a first scheduling cell and a second scheduling cell, and wherein the size of control messages on the first scheduling cell and the size of control messages on the second scheduling cell are same, and monitoring the control channels for the control messages.

Abstract: Techniques are described for performing feedback by a communication device. An example wireless communication method includes receiving, by a communication device, X shared channels from a network device, where the X shared channels are located in between a first random access channel (RACH) instance and a second RACH instance in time domain, where the second RACH instance includes Y RACH occasions in time domain, where X and Y are integers, and where Y is greater than or equal to X; and transmitting, by the communication device, a preamble in at least one RACH occasion from the Y RACH occasions, where the preamble indicates exactly one of: (1) a feedback associated with a shared channel from the X shared channels, or (2) a random access.

Abstract: Die structures and methods of forming the same are described. In an embodiment, a device includes: a lower integrated circuit die; a first upper integrated circuit die face-to-face bonded to the lower integrated circuit die, the first upper integrated circuit die including a first semiconductor substrate and a first through-substrate via; a gap-fill dielectric around the first upper integrated circuit die, a top surface of the gap-fill dielectric being substantially coplanar with a top surface of the first semiconductor substrate and with a top surface of the first through-substrate via; and an interconnect structure including a first dielectric layer and first conductive vias, the first dielectric layer disposed on the top surface of the gap-fill dielectric and the top surface of the first semiconductor substrate, the first conductive vias extending through the first dielectric layer to contact the top surface of the first through-substrate via.

Abstract: In an embodiment, a device includes: a first integrated circuit die comprising a semiconductor substrate and a first through-substrate via; a gap-fill dielectric around the first integrated circuit die, a surface of the gap-fill dielectric being substantially coplanar with an inactive surface of the semiconductor substrate and with a surface of the first through-substrate via; a dielectric layer on the surface of the gap-fill dielectric and the inactive surface of the semiconductor substrate; a first bond pad extending through the dielectric layer to contact the surface of the first through-substrate via, a width of the first bond pad being less than a width of the first through-substrate via; and a second integrated circuit die comprising a die connector bonded to the first bond pad.

Abstract: A semiconductor device includes a first semiconductor layer below a second semiconductor layer; first and second gate dielectric layers surrounding the first and the second semiconductor layers, respectively; and a gate electrode surrounding both the first and the second gate dielectric layers. The first gate dielectric layer has a first top section above the first semiconductor layer and a first bottom section below the first semiconductor layer. The second gate dielectric layer has a second top section above the second semiconductor layer and a second bottom section below the second semiconductor layer. The first top section has a first thickness. The second top section has a second thickness. The second thickness is greater than the first thickness.

Abstract: A method includes providing a structure having a first channel member and a second channel member over a substrate. The first channel member is located in a first region of the structure and the second channel member is located in a second region of the structure. The method also includes forming a first oxide layer over the first channel member and a second oxide layer over the second channel member, forming a first dielectric layer over the first oxide layer and a second dielectric layer over the second oxide layer, and forming a capping layer over the second dielectric layer but not over the first dielectric layer. The method further includes performing an annealing process to increase a thickness of the second oxide layer under the capping layer.

Abstract: An evaluating method for a useful lifespan of a conductive gel is applied to a non-implantable electrical stimulation device. The non-implantable electrical stimulation device includes an electrical stimulator and an electrode assembly. The electrical stimulator is detachably electrically connected to the electrode assembly. The evaluating method for the useful lifespan of the conductive gel includes the following steps. A first measuring signal is generated, and the first measuring signal flows through a conductive area to generate a first signal to be tested. The first signal to be tested is received. The first total impedance value is obtained according to the first signal to be tested. The impedance value of the conductive gel is obtained according to the first total impedance value, so as to evaluate the useful lifespan of the conductive gel.

Abstract: In an embodiment, a method includes: depositing a gate dielectric layer on a first fin and a second fin, the first fin and the second fin extending away from a substrate in a first direction, a distance between the first fin and the second fin decreasing along the first direction; depositing a sacrificial layer on the gate dielectric layer by exposing the gate dielectric layer to a self-limiting source precursor and a self-reacting source precursor, the self-limiting source precursor reacting to form an initial layer of a material of the sacrificial layer, the self-reacting source precursor reacting to form a main layer of the material of the sacrificial layer; annealing the gate dielectric layer while the sacrificial layer covers the gate dielectric layer; after annealing the gate dielectric layer, removing the sacrificial layer; and after removing the sacrificial layer, forming a gate electrode layer on the gate dielectric layer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a first semiconductor stack and a second semiconductor stack over a substrate, wherein each of the first and second semiconductor stacks includes semiconductor layers stacked up and separated from each other; a dummy spacer between the first and second semiconductor stacks, wherein the dummy spacer contacts a first sidewall of each semiconductor layer of the first and second semiconductor stacks; and a gate structure wrapping a second sidewall, a top surface, and a bottom surface of each semiconductor layer of the first and second semiconductor stacks.