Abstract: A processor adapted for neural network operation is provided to include a scratchpad memory, a processor core, a neural network accelerator coupled to the processor core, and a arbitration unit coupled to the scratchpad memory, the processor core and the neural network accelerator. The processor core and the neural network accelerator share the scratchpad memory via the arbitration unit.

Abstract: An apparatus suitable for single molecule sequencing. The apparatus includes at least one nanowell, a plurality of nucleic acid immobilization moieties, and a plurality of types of nucleic acid fragments. The nanowell has an observation zone. The nucleic acid immobilization moieties are disposed in or proximate to the observation zone. The nucleic acid fragments are immobilized to the nucleic acid immobilization moieties, respectively. At least one polymerase is disposed in the observation zone. A method of sequencing nucleic acid molecules using the above-mentioned apparatus is provided.

Abstract: A semiconductor device includes a substrate, an isolation structure over the substrate, a fin over the substrate and the isolation structure, a gate structure engaging a first portion of the fin, first sidewall spacers over sidewalls of the gate structure and over a second portion of the fin, source/drain (S/D) features adjacent to the first sidewall spacers, and second sidewall spacers over the isolation structure and over sidewalls of a portion of the S/D features. The second sidewall spacers and the second portion of the fin include a same dopant.

Abstract: A method includes forming a first gate dielectric and a second gate dielectric over a first semiconductor region and a second semiconductor region, respectively, depositing a lanthanum-containing layer including a first portion and a second portion overlapping the first gate dielectric and the second gate dielectric, respectively, and depositing a hard mask including a first portion and a second portion overlapping the first portion and the second portion of the lanthanum-containing layer, respectively. The hard mask is free from both of titanium and tantalum. The method further includes forming a patterned etching mask to cover the first portion of the hard mask, with the second portion of the hard mask being exposed, removing the second portion of the hard mask and the second portion of the lanthanum-containing layer, and performing an anneal to drive lanthanum in the first portion of the lanthanum-containing layer into the first gate dielectric.

Abstract: An electrical-stimulation device includes an electrical-stimulation signal-generating circuit, a first connection unit, a first conductive member and a second conductive member. The electrical-stimulation signal-generating circuit has a first channel for providing a first electrical-stimulation signal. The first connection unit has a plurality of first contact points and a plurality of second contact points, wherein the first contact points and the second contact points are alternately arranged. The first conductive member is connected to the first contact points. The second conductive member is connected to the second contact points. The first conductive member and the second conductive member are electrically connected to the first channel, so that the first electrical-stimulation signal is transmitted through the first contact points and the second contact points corresponding to the first channel.

Abstract: The invention relates to a medium for producing glucosamine, including 25-500 g/L molasses, 0.01-100 g/L soybean hydrolysate or 0.25-100 g/L corn steep liquor, 0.1-2 g/L MgSO4.7H2O, 0.1-0.5 g/L Al(NO3)3, and 1-5 mL/L methanol. The invention also relates to a method for producing glucosamine, including providing microorganism being able to produce glucosamine, and fermenting the microorganism in the medium mentioned above.

Abstract: The present application discloses am electrical stimulation device for electrically stimulating at least one target zone of an organism. The electrical stimulation device comprises a control unit and an electrical stimulation unit. The electrical stimulation unit includes a frequency synthesizer, an amplifier, a variable resistor, at least one first electrode and at least one second electrode. The frequency synthesizer is coupled to the control unit and generates a frequency signal. The amplifier is coupled to the frequency synthesizer. The variable resistor comprises a resistance and is coupled to the control unit and the amplifier. The first electrode and the second electrode are coupled to the amplifier. The amplifier outputs an electrical stimulation signal according to the frequency signal of the frequency synthesizer and the resistance of the variable resistor to impel the first electrode and the second electrode to generate an electric field.

Abstract: The network service system includes a transmission controller and an authentication server. The transmission controller determines whether a service request belongs to a service of a proprietary network registered with the mobile edge computing platform and comprises an authentication request. The service request is from an electronic device. When the transmission controller determines that the service request belongs to a service of the proprietary network and comprises an authentication request, the authentication server executes an authentication mechanism according to packet information that corresponds to the service request, and the authentication mechanism triggers a permission server to confirm the identity information and permission information of the electronic device.

Abstract: A method and structure for doping source and drain (S/D) regions of a PMOS and/or NMOS FinFET device are provided. In some embodiments, a method includes providing a substrate including a fin extending therefrom. In some examples, the fin includes a channel region, source/drain regions disposed adjacent to and on either side of the channel region, a gate structure disposed over the channel region, and a main spacer disposed on sidewalls of the gate structure. In some embodiments, contact openings are formed to provide access to the source/drain regions, where the forming the contact openings may etch a portion of the main spacer. After forming the contact openings, a spacer deposition and etch process may be performed. In some cases, after performing the spacer deposition and etch process, a silicide layer is formed over, and in contact with, the source/drain regions.

Abstract: A user equipment (UE) context migration management method applied to a mobile edge platform for managing a UE context of a mobile communication device is provided. An embodiment of the UE context migration management method includes: receiving at least one migration request for the UE context; calculating a first difference data corresponding to the UE context in response to the at least one migration request, wherein the first difference data represents a difference between the UE contexts obtained in two consecutive UE context retrieving operations corresponding to the at least one migration request; and transmitting the first difference data to the neighboring mobile edge platform to request the neighboring mobile edge platform to perform a migration operation of the UE context based on the first difference data.

Abstract: A method and structure for doping source and drain (S/D) regions of a PMOS and/or NMOS FinFET device are provided. In some embodiments, a method includes providing a substrate including a fin extending therefrom. In some examples, the fin includes a channel region, source/drain regions disposed adjacent to and on either side of the channel region, a gate structure disposed over the channel region, and a main spacer disposed on sidewalls of the gate structure. In some embodiments, contact openings are formed to provide access to the source/drain regions, where the forming the contact openings may etch a portion of the main spacer. After forming the contact openings, a spacer deposition and etch process may be performed. In some cases, after performing the spacer deposition and etch process, a silicide layer is formed over, and in contact with, the source/drain regions.

Abstract: The invention relates to a medium for producing glucosamine, including 25-500 g/L molasses, 0.01-100 g/L soybean hydrolysate or 0.25-100 g/L corn steep liquor, 0.1-2 g/L MgSO4.7H2O, 0.1-0.5 g/L Al(NO3)3, and 1-5 mL/L methanol.

Abstract: A semiconductor device includes a substrate, an isolation structure over the substrate, a fin over the substrate and the isolation structure, a gate structure engaging a first portion of the fin, first sidewall spacers over sidewalls of the gate structure and over a second portion of the fin, source/drain (S/D) features adjacent to the first sidewall spacers, and second sidewall spacers over the isolation structure and over sidewalls of a portion of the S/D features. The second sidewall spacers and the second portion of the fin include a same dopant.

Abstract: A method includes providing a structure having a substrate, a fin, and a gate structure; performing an implantation process to implant a dopant into the fin adjacent to the gate structure; and forming gate sidewall spacers and fin sidewall spacers. The method further includes performing a first etching process to recess the fin adjacent to the gate sidewall spacers while keeping at least a portion of the fin above the fin sidewall spacers. The method further includes performing another implantation process to implant the dopant into the fin and the fin sidewall spacers; and performing a second etching process to recess the fin adjacent to the gate sidewall spacers until a top surface of the fin is below a top surface of the fin sidewall spacers, resulting in a trench between the fin sidewall spacers. The method further includes epitaxially growing a semiconductor material in the trench.

Abstract: A method includes providing a structure having a substrate, a fin, and a gate structure; performing an implantation process to implant a dopant into the fin adjacent to the gate structure; and forming gate sidewall spacers and fin sidewall spacers. The method further includes performing a first etching process to recess the fin adjacent to the gate sidewall spacers while keeping at least a portion of the fin above the fin sidewall spacers. The method further includes performing another implantation process to implant the dopant into the fin and the fin sidewall spacers; and performing a second etching process to recess the fin adjacent to the gate sidewall spacers until a top surface of the fin is below a top surface of the fin sidewall spacers, resulting in a trench between the fin sidewall spacers. The method further includes epitaxially growing a semiconductor material in the trench.

Abstract: A user equipment (UE) context migration management method applied to a mobile edge platform for managing a UE context of a mobile communication device is provided. An embodiment of the UE context migration management method includes: receiving at least one migration request for the UE context; calculating a first difference data corresponding to the UE context in response to the at least one migration request, wherein the first difference data represents a difference between the UE contexts obtained in two consecutive UE context retrieving operations corresponding to the at least one migration request; and transmitting the first difference data to the neighboring mobile edge platform to request the neighboring mobile edge platform to perform a migration operation of the UE context based on the first difference data.