Abstract: A device including a spin channel to transport a spin current, a nano-oscillator, and a magnetoresistive device that receives the spin current from the nano-oscillator. The nano-oscillator includes a magnetization state that oscillates between a first state and a second state in response to an input voltage or current. The oscillation of the nano-oscillator may induce the spin current within the spin channel. The magnetoresistive device includes a magnetization state that is set based at least in part on the received spin current.

Abstract: The disclosure describes magnetic materials including iron nitride, bulk permanent magnets including iron nitride, techniques for forming magnetic materials including iron nitride, and techniques for forming bulk permanent magnets including iron nitride.

Abstract: A magnetic material may include ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. In some examples, the magnetic material including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2 may include a relatively high magnetic saturation, such as greater than about 219 emu/gram, greater than about 242 emu/gram, or greater than about 250 emu/gram. In addition, in some examples, the magnetic material including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2 may include a relatively low coercivity. Techniques for forming the magnetic material are also described.

Abstract: An inductor may include a magnetic material that may include ??-Fe16(NxZ1-x)2 or ??-Fe8(NxZ1-x), or a mixture of at least one of ??-Fe16N2 or ??-Fe8N and at least one of ??-Fe16Z2 or ??-Fe8Z, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. In some examples, the magnetic material may include a relatively high magnetic saturation, such as greater than about 200 emu/gram, greater than about 242 emu/gram, or greater than about 250 emu/gram. In addition, in some examples, the magnetic material may include a relatively low coercivity or magnetocrystalline anisotropy. Techniques for forming the inductor including the magnetic material are also described.

Abstract: A device including a conductive layer configured to output a spin-current based on an analog input value, a plurality of magnetoresistive devices, and an encoder configured to output a digital value. Each of the magnetoresistive devices may be configured to receive a different reference voltage on a first side and the spin-current on a second side. The magnetization state of each of the magnetoresistive devices is set by respective reference voltages and the spin-current. The encoder may include a plurality of digital bits that is a digital representation of the analog input value based on the magnetization states of the magnetoresistive devices.

Abstract: A multi-surface nanoparticle source includes a first end having an inlet configured to receive a flow of gas, a second end comprising an outlet through which nanoparticles exit the nanoparticle source, and two or more targets spaced apart and arranged about an axis extending from the first end to the second end. At least at least one of the targets is hollow, and the inlet is arranged to direct a flow of the gas through the hollow target, between at least two of the targets, or both. The gas impacts the targets, releasing atoms from the target and through the second end. The targets may be arranged lengthwise and concentrically about the axis. In some cases, a multi-surface nanoparticle source includes one or more magnets. Nanoparticles formed with a multi-surface nanoparticle deposition system may be homogeneous or have a core-shell structure.

Abstract: A method may include annealing a material including iron and nitrogen in the presence of an applied magnetic field to form at least one Fe16N2 phase domain. The applied magnetic field may have a strength of at least about 0.2 Tesla (T).

Abstract: A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.

Abstract: A cell array includes a logic connection line, a plurality of bit selection lines, and a plurality of cells. Each cell includes a memory element connected to a respective bit selection line and a logic switching element that selectively connects the memory element to the logic connection line. When logic switching elements of multiple separate cells connect their respective memory elements to the logic connection line, the memory elements connected to the logic connection line operate as a logic device with an output of the logic device stored in one of the memory elements.

Abstract: Particle functionalization systems including one or more of: a target of a material; an energetic ion and/or electron source providing accelerated ions and electrons to the target; a potential that is applied to at least the target and that causes ions and/or electrons from the ionized gas to impact a surface of the target and release atoms of the material; at least one magnet providing a magnetic field that controls movement of the ions and electrons and nucleation, formation and growth of particles from the released atoms; and a particle collection device that collects particles, the collection device comprising a substrate and a polymeric functionalization coating disposed on the substrate, wherein particles impinge upon and form bonds with molecules of the functionalization coating. Methods of preparing functionalized particles, functionalized particle compositions, and kits including functionalized particles are also described.

Abstract: A device includes a sensor surface and a pair of electrodes. The sensor surface includes a first conductive layer separated from a second conductive layer by an intermediary layer, a magnetization direction of the first conductive layer and a magnetization direction of the second conductive layer having a ground state orientation of approximately 0 degrees. An electrical resistance between the pair of electrodes is determined by a magnetic field proximate the sensor surface.

Abstract: Techniques are described for data transfer in spin-based systems where digital bit values are represented by magnetization states of magnetoresistive devices rather than voltages or currents. For data transmission, a spin-based signal is converted to an optical signal and transmitted via an optical transport. For data reception, the optical signal is received via the optical transport and converted back to a spin-based signal. Such data transfer may not require an intervening conversion of the spin-based signal to charge-based signal that relies on voltages or currents to represent digital bit values. In addition, techniques are described to use magnetoresistive devices to control the amount of current or voltage that is delivered, where the magnetization state of the magnetoresistive device is set by an optical signal.

Abstract: A device includes a sensor surface and a pair of electrodes. The sensor surface includes a first conductive layer separated from a second conductive layer by an intermediary layer, a magnetization direction of the first conductive layer and a magnetization direction of the second conductive layer having a ground state orientation of approximately 0 degrees. An electrical resistance between the pair of electrodes is determined by a magnetic field proximate the sensor surface.

Abstract: In some examples, a method comprising depositing a functional layer (e.g., a magnetic layer) over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing portions of the functional layer not masked by the hard mask layer, wherein the depositing of the functional layer, the depositing of the granular layer, removing the second material, and removing the portions of the functional layer are performed in a vacuum environment.

Abstract: A biosensor includes a magnetic structure having grooved surface to biologically bond magnetic labels to a biological substance within the grooves. The grooves are positioned within the magnetic structure so that stray magnetic fields from the magnetic structure magnetize magnetic labels within the groove. The magnetic labels may be magnetic nanoparticles or magnetic microbeads. The techniques may reduce or eliminate the usage of any external magnetic field generator, e.g., electromagnets or current lines.

Abstract: A cell array includes a logic connection line, a plurality of bit selection lines, and a plurality of cells. Each cell includes a memory element connected to a respective bit selection line and a logic switching element that selectively connects the memory element to the logic connection line. When logic switching elements of multiple separate cells connect their respective memory elements to the logic connection line, the memory elements connected to the logic connection line operate as a logic device with an output of the logic device stored in one of the memory elements.

Abstract: A permanent magnet may include a Fe16N2 phase constitution.

Abstract: A magnetic biosensor can include a magnetic stack comprising a free layer, a fixed layer, and a nonmagnetic layer between the free layer and the fixed layer. At least one of the free layer or the fixed layer may have a magnetic moment oriented out of a major plane of the free layer or the fixed layer, respectively, in an absence of an external magnetic field. The magnetic biosensor also may include a sample container disposed over the magnetic stack, a plurality of capture antibodies attached to a bottom surface of the sample container above the magnetic stack, and a magnetic field generator configured to generate a magnetic field substantially perpendicular to the major plane of the free layer or fixed layer.

Abstract: A device includes an excitation coil, a detector coil, and a processing circuit. The excitation coil is aligned about a volume. The excitation coil is configured to carry a first and second biasing current and generate a magnetic field in the volume. The detector coil is configured to generate an electrical signal based on a detected field within the volume. The detected field is based on the magnetic field. The processing circuit is configured to generate data based on the electrical signal.

Abstract: A system includes a first sensor, a field source, and a processor. The first sensor includes a surface and has an electrical resistance determined by a magnetic field at the surface. The field source is configured to provide a biasing magnetic field to the surface. The biasing magnetic field is aligned parallel to the surface and aligned perpendicular relative to the surface. The magnetic field has a frequency. The processor is coupled to the sensor and is configured to determine a parameter based on a measure of a change in the resistance. The change in the resistance corresponds to the resistance at a time before onset of a magnetic field perturbance at the surface and a time after the onset of the magnetic field perturbance at the surface.