Abstract: A liquid crystal display panel which is protected from external static electricity includes a first substrate, a second substrate, a liquid crystal layer, and a graphene film. The second substrate is opposite to the first substrate. The liquid crystal layer is sandwiched between the first substrate and the second substrate. The graphene film is disposed at a side of the first substrate away from the liquid crystal layer.

Abstract: An exemplary light emitting touch display includes a nitride light emitting diode, a thin film transistor, and a touch unit. The nitride light emitting diode is formed on a first substrate. The thin film transistor is formed on a second substrate. The nitride light emitting diode and the thin film transistor are located between the first substrate and the second substrate and offset from each other. The touch unit includes a conductive connecting layer and a patterned wire. At least a part of the touch unit is formed between the first and second substrates.

Abstract: A light emitting display includes a light emitting diode formed on a first substrate, a thin film transistor formed on a second substrate, and a light sensing unit located at a lateral side of the thin film transistor. The first substrate and the second substrate are arranged face-to-face and are spaced from each other. And the thin film transistor and the light emitting diode are formed between the first and second substrates. The light sensing unit is located at a light path of the light emitting diode to detect an intensity of light from the light emitting diode, and the thin film transistor is offset from the light path of the light emitting diode and is electrically connected with the light sensing unit.

Abstract: A light emitting diode chip includes a substrate and a first conductive layer formed on the substrate. The first conductive layer includes a plurality of P-type AlInGaN layers and a plurality of graphenel layers alternately stacked on each other. A P-type AlInGaN layer, an active layer and an N-type AlInGaN layer are formed on the first conductive layer in sequence. A second conductive layer is formed on the N-type AlInGaN layer. A first electrode is electrically connected to the first conductive layer and a second electrode is electrically connected to the second conductive layer.

Abstract: An exemplary light emitting display includes a nitride light emitting diode formed on a first substrate and a thin film transistor formed on a second substrate. The first substrate and the second substrate are arranged face-to-face, and the first substrate is spaced from the second substrate. The nitride light emitting diode electrically connects with the thin film transistor. The thin film transistor comprises an active layer, and the active layer of the thin film transistor deviates from the light path of the nitride light emitting diode.

Abstract: A method for switching channels comprises obtaining program information of programs of each channel. The obtained program information is displayed for a user to select one or more programs. The selected programs are regarded as favorite programs and added to a favorite program list. The currently airing favorite programs are determined, and a switch list recording the currently airing favorite programs is created. The channels of the favorite programs in the switch list can be switched according to a switch command.

Abstract: A thin film transistor includes a substrate and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region. A source electrode and a drain electrode are formed on the source region and the drain region respectively. A gate insulating layer is formed between a gate electrode and the channel region. The thin film transistor further includes a nitride conductive layer formed between the drain electrode and the drain region, and between the source electrode and source region. The nitride conductive layer has a carrier concentration higher than that of the active layer, thereby reducing contacting resistances between the drain electrode and the drain region and between the source electrode and source region.

Abstract: A video device includes a setting unit, a recording unit, a detection unit, a timer, and a control unit. The setting unit sets a viewing allowance time of the child. The recording unit records the child's viewing habit. The detection unit detects whether a child is watching media content on the video device. The timer times a viewing time of the child's viewing habit when the child is watching media content on the video device. The control unit controls the recording to record the child's viewing habit and turns off the video device when the viewing time reaches the viewing allowance time. A method for control and monitoring a child's usage of the video device is also provided.

Abstract: An exemplary active matrix solid state light display includes a substrate, a plurality of solid state lighting elements and a plurality of thin film transistors. A buffer layer is formed on the substrate. The solid state lighting elements are formed on the buffer layer, and the thin film transistors are formed on the substrate. The thin film transistor is located at a lateral side of the solid state lighting element. The solid state lighting element is a light emitting diode. The thin film transistor electrically connects with the solid state lighting element by a way of a source electrode or a drain electrode connecting with the solid state lighting element.

Abstract: An exemplary flip-chip solid state light display includes a substrate, a plurality of solid state lighting elements and a plurality of thin film transistors; the solid state lighting elements and the thin film transistors are located on the substrate, and the solid state lighting elements each are adjacent to one respective thin film transistor. The solid state lighting elements each are a light emitting diode, and are mounted on the substrate by a way of flip-chip. The thin film transistors each electrically connect with a corresponding solid state element by a source electrode or a drain electrode of each of the thin film transistors.

Abstract: A multimedia device in communication with a communication device of a user is provided. The multimedia device sends a message to the communication device to remind the user that a selected scheduled program is about to start. The message includes at least a recording option and a watching option. The communication device transmits a recording instruction or a watching instruction to the multimedia device according to the user's choice, and the multimedia device records the scheduled program or tunes in to the scheduled program as chosen by the user. A prompt method for selected scheduled programs is also provided.

Abstract: A virtual keyboard interface system of an electronic apparatus for displaying a virtual keyboard interface in a display of the electronic apparatus includes a graphical data module and a displaying module. The graphical data module stores graphical data of a number of keys, a number of shadow parts corresponding to the keys, and a number of patterns on the keys. The displaying module displays the virtual keyboard interface on the display according to the graphical data to make the virtual keyboard interface being seen from a slanting angle ? relative to a vertical direction.

Abstract: A recording device for recording a program is provided. The recording device has a local storing unit and communicates with a network storage device. The recording unit transmits the recorded program to the network storage device, to allow users access to the network storage device to watch or download the recorded program. When the recording device is disconnected from the network storage device, the recording device stores the recorded program in the local storing unit temporarily, and then transmits the record program in the local storing unit to the network storage device when the recording device reconnects with the network storage device, to avoid the loss of the recorded program. A method for recording a program is also provided.

Abstract: A recording device for recording a program includes a display, a setting unit, a recording unit, a controlling unit, and a detecting unit. The setting unit sets recording parameters in response to users' operations. The recording unit records the program according to the set recording parameters and generates a control signal when the recording process for recording the program is finished. The control unit displays an indicator on the display to indicate the recorded program in response to the control signal. The detection unit detects whether the recorded program is opened. The control unit removes the indicator corresponding to the recorded program when the recorded program is detected to be opened. A method for recording a program is also provided.

Abstract: A thin film transistor includes a substrate and a gate electrode formed on the substrate. A gate insulating layer is formed on the substrate and covers the gate electrode. A channel layer is formed on the gate insulating layer. A GaZnO layer formed on the channel layer. A source electrode and a drain electrode are formed on two opposite ends of the GaZnO layer, respectively.

Abstract: A method for manufacturing an oxide semiconductor layer includes following steps: providing a substrate; forming an oxide semiconductor layer on the substrate by sputtering a first kind of metallic ions from a first metallic oxide sputtering target, and sputtering at least two second kinds of metallic ions from a second metallic oxide sputtering target. The at least two second kind of metallic ions are different from the first kind of metallic ions. A proportion of the first kind of metallic ions and the at least two second kind of metallic ions is adjustable by controlling a depositing speed of the oxide semiconductor layer and a period of using a baffle plate in sputtering. A method for manufacturing a thin film transistor is also provided.

Abstract: A thin film transistor includes a substrate, a gate electrode formed on the substrate and a gate insulating layer formed on the substrate and covering the gate electrode. A first ion capturing layer is formed on the gate insulating layer. A channel layer is formed on the ion capturing layer. And, a source electrode and a drain electrode are electrically connected with the channel layer.

Abstract: A thin film transistor includes a substrate and a channel layer formed on an upper surface of the substrate. A source electrode and a drain electrode are formed on an upper surface of the channel layer and located at two opposite ends of the upper surface of the channel layer. A gate insulating layer is located in a middle portion of the upper surface of the channel layer. A gate electrode is located on an upper surface of the gate insulating layer. The thin film transistor further includes a first organic air block layer. The first organic air block layer is formed between the substrate and the channel layer.

Abstract: A method for making a light emitting chip package, comprises: providing a substrate; forming a plurality of recesses on the bottom surface of the substrate; forming an etch stop layer on the bottom surface; forming a step hole on the top surface; forming an insulation layer on the top surface; defining a plurality of first through holes in the insulation layer and a plurality of second through holes in the etch stop layer, the number of the first through holes being different from the number of the second through holes; filling the first through holes and the second through holes with metal to respectively form first electrical conductor portions and second electrical conductor portions; forming a patterned electric conductive layer on the insulation layer; arranging a light emitting chip on the electric conductive layer; and encapsulating the light emitting chip with an encapsulation.

Abstract: A method for making a light emitting chip package, comprises: providing a substrate; forming a plurality of recesses on the bottom surface of the substrate; forming an etch stop layer on the bottom surface; forming a step hole on the top surface; forming an insulation layer on the top surface; defining a plurality of first through holes in the insulation layer and a plurality of second through holes in the etch stop layer, the number of the first through holes being different from the number of the second through holes; filling the first through holes and the second through holes with metal to respectively form first electrical conductor portions and second electrical conductor portions; forming a patterned electric conductive layer on the insulation layer; arranging a light emitting chip on the electric conductive layer; and encapsulating the light emitting chip with an encapsulation.