Abstract: A light emitting diode includes a first illumination region, a second illumination region, and the third illumination, wherein a first fluorescent conversion layer and a second fluorescent conversion layer cover the first illumination region and the second illumination region, respectively. The fluorescent conversion layers can convert lights from the illumination regions to other lights with different wavelengths whereby the light emitting diode generates light with multiple wavelengths.

Abstract: A thin film transistor fabricating method is disclosed. The thin film transistor fabricating method comprises providing a substrate; forming an oxide semiconductor layer on an upper surface of the substrate; forming a gate insulating layer on an upper surface of the oxide semiconductor layer; masking a portion of the oxide semiconductor layer with the gate insulating layer; irradiating the oxide semiconductor layer with irradiating light having photon energy less than a band gap of the oxide semiconductor layer; forming a drain region and a source region at lateral portions of the oxide semiconductor layer exposed to the irradiating light, and forming a channel region in the portion of the oxide semiconductor layer masked by the gate insulating layer; and forming a gate electrode on an upper surface of the gate insulating layer.

Abstract: A light emitting chip package includes a substrate, an insulation layer, a patterned electric conductive layer, a light emitting chip, an encapsulation, a plurality of thermal conductors and electrical conductors. The insulation layer is formed on a top surface of the substrate. The patterned electric conductive layer partially covers the insulation layer. The light emitting chip is arranged on the electric conductive layer. The encapsulation covers the light emitting chip and the electric conductive layer. The plurality of thermal conductors is formed at a bottom surface side of the substrate. The plurality of electrical conductors penetrates the insulation layer and connects the conductive layer with the thermal conductor. The plurality of electrical conductors is isolated from each other.

Abstract: A light emitting chip includes a substrate, a heat conducting layer formed on the substrate, a protective layer formed on the heat conducting layer, a light emitting structure and a connecting layer connecting the protective layer with the light emitting structure. The heat conducting layer includes a plurality of horizontally grown carbon nanotube islands. The light emitting structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. A first transparent conductive layer and a current conducting layer are sandwiched between the first semiconductor layer and the connecting layer. A second transparent conductive layer is formed on the second semiconductor layer.

Abstract: A thin film transistor includes a substrate and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region. A source electrode and a drain electrode are formed on the source region and the drain region respectively. A gate insulating layer is formed between a gate electrode and the channel region. The thin film transistor further includes a nitride conductive layer formed between the drain electrode and the drain region, and between the source electrode and source region. The nitride conductive layer has a carrier concentration higher than that of the active layer, thereby reducing contacting resistances between the drain electrode and the drain region and between the source electrode and source region.

Abstract: A thin film transistor includes a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode, a channel region formed on the gate insulating layer, a source region and a drain region formed at two opposite ends of the channel region, a first etching block layer made of silicon oxide and a second etching block layer made of silicon nitride which are formed in sequence on the channel region. The second etching block layer defines a groove in a center thereof to expose a part of the first etching block layer. The groove divides the second etching block layer into a first region and a second region. A source electrode extends from the source region to the first region. A drain electrode extends from the drain region to the second region.

Abstract: A thin film transistor includes a substrate, a source electrode and a drain electrode formed on the substrate, a channel layer formed between the source electrode and the drain electrode, an insulative layer covering the channel layer and a gate electrode formed on the insulative layer. An atomic-doping layer is formed in the channel layer. The atomic-doping layer is delta-doping with no more than one layer of atom.

Abstract: A thin film transistor includes a substrate, a gate electrode, and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region located at two lateral portions of the channel region. The active layer includes a first oxide semiconductor material layer and a second oxide semiconductor material layer stacked to each other. Material of the first oxide semiconductor material layer is different from material of the second oxide semiconductor material layer. A gate insulating layer is formed between the channel region and the gate electrode. A source electrode electrically connects the source region. A drain electrode electrically connects the drain region.

Abstract: A method for manufacturing a light emitting chip comprises: providing a substrate with a catalyst layer formed thereon, the catalyst layer being etched to form a number of patterns which are spaced from each other by multiple gaps; forming a buffer layer in the multiple gaps of the patterned catalyst layer, the buffer layer comprising a patterned carbon nano tube structure formed along an extending direction of the substrate, the carbon nano tube structure being comprised of nitride semiconductor; removing the catalyst layer from the substrate; growing a cap layer from the substrate to cover the buffer layer; and growing a light emitting structure from a top of the cap layer, the light emitting structure sequentially comprising a first cladding layer, a light emitting layer, and a second cladding layer.

Abstract: A thin film transistor includes a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode, a channel region formed on the gate insulating layer, a source region and a drain region formed at two opposite ends of the channel region, a first etching block layer made of silicon oxide and a second etching block layer made of silicon nitride which are formed in sequence on the channel region. The second etching block layer defines a groove in a center thereof to expose a part of the first etching block layer. The groove divides the second etching block layer into a first region and a second region. A source electrode extends from the source region to the first region. A drain electrode extends from the drain region to the second region.

Abstract: A light-emitting diode (LED) package includes a first chip group, a second chip group and an optical wavelength converting substance. The first chip group includes a plurality of red LED chips configured for emitting red light. The second chip group includes a plurality of blue LED chips configured for emitting blue light. The optical wavelength converting substance is arranged on light paths of the blue LED chips. The optical wavelength converting substance is configured for partly absorbing blue light emitted from the blue LED chips and emitting visible lights with different wavelengths. The plurality of blue LED chips has a total light output larger than that of the plurality of red LED chips.

Abstract: An exemplary light emitting package includes a base, an LED chip mounted on the base, an encapsulant layer encapsulating the LED chip and a phosphor layer located above and separated from the LED chip. The phosphor layer includes a phosphor scattered portion and a clear portion without phosphor therein. An area of the phosphor scattered portion is smaller than the light emitting area of the encapsulant layer from which light emitted upwardly from the LED chip leaves the encapsulant layer.

Abstract: A light emitting diode (LED) with a stable color temperature includes at least one LED chip and at least one color sensor module. The LED chip has a main light emitting surface and a sub light emitting surface opposite to the main surface. The color sensor module senses the intensities of light emitting from sub light emitting surface of the LED chip for adjustment of a color temperature of the LED.

Abstract: A light emitting diode includes a substrate, two electrodes mounted on the substrate, a light emitting diode chip and an encapsulate sealing the light emitting diode chip. The encapsulant is doped with fluorescence particles and light diffusion particles. An average diameter of the diffusion particles is less than that of the fluorescence particles. A concentration of the diffusion particles in a portion of the encapsulant adjacent to a light output surface thereof is larger than that of the diffusion particles in a portion thereof adjacent to the chip. A concentration of the fluorescence particles in the portion of the encapsulant adjacent to the chip is larger than that of the fluorescence particles in the portion of the encapsulant adjacent to the light output surface.

Abstract: A white light emitting diode device includes a substrate, a plurality of blue LED chips arranged on the substrate, an encapsulation covering the blue LED chips and a yellow phosphor absorbing part of blue light from the blue LED chips and emitting a yellow light. The blue light from the blue LED chips without being absorbed by the yellow phosphor is combined with the yellow light to form a white light. The blue LED chips have different peak wavelengths from each other. Differences between peak wavelengths of any two blue LED chips are no larger than a full width at half maximum of any one of the blue LED chips.

Abstract: A light emitting chip includes a substrate, a buffer layer, a cap layer and a light emitting structure. The buffer layer is formed on the substrate and includes a carbon nano tube structure substantially parallel to the substrate. The carbon nano tube structure is comprised of nitride semiconductor. The cap layer grows from the buffer layer. The light emitting structure is formed on the cap layer. The light emitting structure sequentially includes a first cladding layer connected to the cap layer, a light emitting layer, and a second cladding layer.

Abstract: A light emitting element package includes first and second light emitting elements, a phosphor film consisting of first and second phosphor elements and a sensing module. The sensing module is configured for modulating light intensity of the at least one second light emitting element. Light of a first color temperature is generated when light from the at least one first light emitting element passes through the first phosphor elements. Light of a second color temperature is generated when light of the at least one second light emitting element passes through the second phosphor elements. Light of a predetermined color temperature is generated by mixing the light of the first color temperature and the light of the second color temperature.

Abstract: A thin film transistor for a semiconductor device is disclosed. The thin film transistor comprises a substrate; a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material; a source region and a drain region formed on each of lateral sides of the channel region, the source region and the drain region being made of a second oxide semiconductor material, the second oxide semiconductor material having a band gap smaller than a band gap of the first oxide semiconductor material; a gate electrode formed on the channel region; and a gate insulating layer sandwiched between the gate electrode and the channel region.

Abstract: A thin film transistor fabricating method is disclosed. The thin film transistor fabricating method comprises providing a substrate; forming an oxide semiconductor layer on an upper surface of the substrate; forming a gate insulating layer on an upper surface of the oxide semiconductor layer; masking a portion of the oxide semiconductor layer with the gate insulating layer; irradiating the oxide semiconductor layer with irradiating light having photon energy less than a band gap of the oxide semiconductor layer; forming a drain region and a source region at lateral portions of the oxide semiconductor layer exposed to the irradiating light, and forming a channel region in the portion of the oxide semiconductor layer masked by the gate insulating layer; and forming a gate electrode on an upper surface of the gate insulating layer.

Abstract: A thin film transistor includes a substrate with a recess formed therein, a channel region received in the recess, a gate insulating layer formed on the channel region, a gate electrode formed on the gate insulating layer, and a source region and a drain region connecting the channel region, respectively. The gate insulating layer and the gate electrode are positioned between the source region and the drain region. The channel region is made of a nitride compound semiconductor. A method of manufacturing the thin film transistor is also provided.