Abstract: A light emitting diode array for a liquid crystal display comprises a plurality of first light emitting diodes that are driven by pulse-width modulated signals and a plurality of second light emitting diodes that are driven by constant direct current. The plurality of first light emitting diodes and the plurality of second light emitting diodes are arranged in an alternating manner for adjustment of the uniform illumination of a liquid crystal display.

Abstract: A light source assembly comprises a plurality of reflective sheets, a plurality of light emitting diodes and a printed circuit board. Each reflective sheet comprises a plate member and a plurality of openings formed on the plate member. The plurality of light emitting diodes are mounted on the printed circuit board. The plurality of reflective sheets are also mounted on the printed circuit board. The plurality of light emitting diodes are respectively located in the openings. The light emitted from the light emitting diodes is reflected by the surface of the plate member.

Abstract: A light emitting diode (LED) device comprises a substrate, an LED chip and an encapsulation body. The LED chip is mounted on the substrate, and the encapsulation body is overlaid on the LED chip and the substrate. The encapsulation body includes a light output surface. The light output surface can uniformly diffuse emission light over a wide angle in a first direction and concentrate the emission light in a second direction perpendicular to the first direction.

Abstract: A light module of a LCD backlight module includes a circuit board and a plurality of light-emitting diodes (LEDs) arranged on the circuit board. Each of the LEDs has a wide far-field pattern, and each of the LEDs includes at least one LED chip and a molding unit packaging the LED chip. The LED chip is electrically connected to the circuit board.

Abstract: A light apparatus is capable of emitting light of multiple wavelengths using a nanometer fluorescent material. The light apparatus comprises an initial light source that emits initial color light. The initial light source is covered with a transparent film member; and the inside or the surface of the film member, or the initial light source, is coated with at least one nanometer fluorescent material. The nanometer fluorescent material absorbs the initial color light and gets excited, and in the excitement it emits fluorescent light which is different from the initial color light. The initial color light and the fluorescent light combine to form light of multiple wavelengths, and the light of multiple wavelengths is emitted by the light apparatus. Besides, a combination of nanometer fluorescent materials of various particle sizes enables the emission of multiple-wavelength light of various dominant wavelengths.

Abstract: A package structure for photoelectronic devices comprises a silicon substrate, a first insulating layer, a reflective layer, a second insulating layer, a first conductive layer, a second conductive layer and a die. The silicon substrate has a first surface and a second surface, wherein the first surface is opposed to the second surface. The first surface has a reflective opening, and the second surface has at least two electrode via holes connected to the reflective opening and a recess disposed outside the electrode via holes. The first insulating layer overlays the first surface, the second surface and the recesses. The reflective layer is disposed on the reflective opening. The second insulating layer is disposed on the reflective layer. The first conductive layer is disposed on the surface of the second insulating layer. The second conductive layer is disposed on the surface of the second surface and inside the electrode via holes.

Abstract: A package structure of a light emitting diode for a backlight comprises a long-wavelength LED die and a short-wavelength LED die. The lights emitted from the two LED dies are mixed with the light emitted from excited fluorescent powders for serving as the backlight of a liquid crystal display. A partition plate is disposed between the two LED dies for separating them from each other. The effective light output of the package structure is increased because each of the two LED dies cannot absorb the light from the other.

Abstract: The present invention includes step of selecting a provisional substrate, and forming semiconductor device structure is formed on the provisional substrate. The provisional substrate includes conductor material, semiconductor material or insulator material. Then, next step is to separate the chips on the provisional substrate into a plurality of individual units on the provisional substrate. The separating method includes but is not limited to physical method such as cutting by knife or laser or, chemical method such as lithography. Next step is to select a permanence substrate to attach the device to the permanence substrate by using physical or chemical method. The attaching method includes the usage of glue, metal, fusion, pressure, van der waale force, and so on. Subsequently, the provisional substrate on the other side of the semiconductor device is removed. The method of removing the provisional substrate includes but is not limited to physical polish, chemical etching, or laser removal.

Abstract: The present invention pertains to a light emitting diode with high luminance and method therefor, and specially to a light emitting diode having a selectively highly-doped low resistive layer of InGaAlP. The selectively highly-doped low resistive layer may be grown by the current epitaxy technique. Therefore, the light emitting diode of the present application may be mass produced, thus having industrial applicability.

Abstract: The present invention relates to a light emitting diode with high luminance and method for making the same, and more particularly to a light emitting diode having a transparent window layer which is formed by a semiconductor film of nitrogen-containing compounds. The present invention is mainly directed to growing a window layer of a light emitting diode with a nitrogen-containing compound on the double heterostructure of InGaAlP. Since the energy gap of the nitrogen-containing compound is greater than that of the light emitted from the active layer and is smaller than that of GaP, it is easily to be doped and to form metallic ohmic electrode. Therefore, it is suitable to form a window layer, thereby increasing the light emitting efficiency of a light emitting diode. In addition, the nitrogen-containing compounds can be formed by the current MBE or OMVPE techniques. Therefore, the light emitting diode can be mass-produced and does have industrial applicability.

Abstract: A novel method of using lasers for generating driving energy for activating P-type compound semiconductor films and reducing the resistivity thereof. The P-type compound semiconductor films are made from III-V nitrides or II-VI group compounds doped with P-type impurity. The present invention can be carried out in the ambience of atmosphere rather than in the ambience of nitrogen gas. In addition, adjusting the power and focusing distance of a laser source, and the power density can change the time required by the activating process.

Abstract: A novel method of using rapid variation of temperature for generating driving energy to activating P-type compound semiconductor films and reducing the resistivity thereof. The P-type compound semiconductor films are made from III-V nitrides or II-VI group compounds doped with P-type impurity. In addition, the time duration when the ambient temperature is greater than a certain temperature during the annealing process is limited to be less than one minute. Therefore, the optoelectronic performance of the P-type compound semiconductor films will not degrade because the duration of annealing process is decreased.

Abstract: An epitaxial system is provided for performing an epitaxial growth of IIIA-VA compound on the wafer substrate. The epitaxial system includes a first reaction region for providing a plasma of a first reactant, a second reaction region for epitaxially reacting the plasma of the first reactant with a second reactant on a wafer, and a guiding medium disposed between the first reaction region and the second reaction region for passing therethrough the second reactant and the first reactant plasma to the second reaction region.

Abstract: A new method for manufacturing a Group III metal nitride epitaxial wafer comprises providing a first nitrogen-contained gas source, providing a second Group III metal trichloride--containing gas source, and causing said first gas to react with second gas in a heating region, thereby forming a Group III metal nitride epitaxial layer on a substrate. The formed epitaxial wafer can serve as a substrate of a laser diode.