Abstract: A semiconductor device includes an IPD structure, a first semiconductor die mounted to the IPD structure with a flipchip interconnect, and a plurality of first conductive posts that are disposed adjacent to the first semiconductor die. The semiconductor device further includes a first molding compound that is disposed over the first conductive posts and first semiconductor die, a core structure bonded to the first conductive posts over the first semiconductor die, and a plurality of conductive TSVs disposed in the core structure. The semiconductor device further includes a plurality of second conductive posts that are disposed over the core structure, a second semiconductor die mounted over the core structure, and a second molding compound disposed over the second conductive posts and the second semiconductor die. The second semiconductor die is electrically connected to the core structure.

Abstract: Single AAV vector constructs for expression of an immunoglobulin molecule or fragment thereof and methods of making and using the same are described. The AAV vectors comprise a self-processing cleavage sequence between a first and second immunoglobulin coding sequence allowing for expression of a functional antibody molecule using a single promoter. The vector constructs may further include an additional proteolytic cleavage sequence which provides a means to remove the self processing peptide sequence from an expressed immunoglobulin molecule or fragment thereof. The vector constructs find utility in enhanced production of biologically active immunoglobulins or fragments thereof in vitro and in vivo.

Abstract: Lentivector constructs for expression of recombinant proteins, polypeptides or fragments thereof and methods of making the same are described. The lentivectors typically have a self-processing cleavage sequence between a first and second protein or polypeptide coding sequence allowing for expression of a functional protein or polypeptide under operative control of a single promoter and may further include an additional proteolytic cleavage sequence which provides a means to remove the self-processing cleavage sequence from the expressed protein or polypeptide. The vector constructs find utility in methods relating to enhanced production of biologically active proteins, such as immunoglobulins or fragments thereof in vitro and in vivo.

Abstract: A semiconductor device is made by providing a temporary carrier for supporting the semiconductor device. An integrated passive device (IPD) structure is formed over the temporary carrier. The IPD structure includes an inductor, resistor, and capacitor. Conductive posts are mounted to the IPD structure, and first semiconductor die is mounted to the IPD structure. A wafer molding compound is deposited over the conductive posts and the first semiconductor die. A core structure is mounted to the conductive posts over the first semiconductor die. The core structure includes a semiconductor material. Conductive through silicon vias (TSVs) are formed in the core structure. A redistribution layer (RDL) is formed over the core structure. A second semiconductor die is mounted over the semiconductor device. The second semiconductor die is electrically connected to the core structure.

Abstract: Vector constructs for expression of two or more functional proteins or polypeptides under operative control of a single promoter and methods of making and using the same are described. The vectors comprise a self-processing cleavage site between each respective protein or polypeptide coding sequence. The vector constructs include the coding sequence for a self-processing cleavage site and may further include an additional proteolytic cleavage sequence which provides a means to remove the self processing peptide sequence from expressed protein(s) or polypeptide(s). The vector constructs find utility in methods for enhanced production of biologically active proteins and polypeptides in vitro and in vivo.

Abstract: A semiconductor device is made by providing an integrated passive device (IPD). Through-silicon vias (TSVs) are formed in the IPD. A capacitor is formed over a surface of the IPD by depositing a first metal layer over the IPD, depositing a resistive layer over the first metal layer, depositing a dielectric layer over the first metal layer, and depositing a second metal layer over the resistive and dielectric layers. The first metal layer and the resistive layer are electrically connected to form a resistor and the first metal layer forms a first inductor. A wafer supporter is mounted over the IPD using an adhesive material and a third metal layer is deposited over the IPD. The third metal layer forms a second inductor that is electrically connected to the capacitor and the resistor by the TSVs of the IPD. An interconnect structure is connected to the IPD.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate with an insulation layer disposed on a top surface of the substrate, forming a passive device over the top surface of the substrate, removing the substrate, depositing an insulating polymer film layer over the insulation layer, and depositing a metal layer over the insulating polymer film layer. A solder mask can be formed over the metal layer. A conformal metal layer can then be formed over the solder mask. A notch can be formed in the insulation layer to enhance the connection between the insulating polymer film layer and the insulation layer. Additional semiconductor die can be electrically connected to the passive device. The substrate is removed by removing a first amount of the substrate using a back grind process, and then removing a second amount of the substrate using a wet dry, dry etch, or chemical-mechanical planarization process.

Abstract: The present invention is directed to DNA sequence encoding angionenesis-inhibiting recombinant chimeric protein, the chimeric protein per se, the pharmaceutical use of the chimeric protein, and to the pharmaceutical composition containing the recombinant protein and the formulation thereof.

Abstract: A semiconductor device is made by providing an integrated passive device (IPD). Through-silicon vias (TSVs) are formed in the IPD. A capacitor is formed over a surface of the IPD by depositing a first metal layer over the IPD, depositing a resistive layer over the first metal layer, depositing a dielectric layer over the first metal layer, and depositing a second metal layer over the resistive and dielectric layers. The first metal layer and the resistive layer are electrically connected to form a resistor and the first metal layer forms a first inductor. A wafer supporter is mounted over the IPD using an adhesive material and a third metal layer is deposited over the IPD. The third metal layer forms a second inductor that is electrically connected to the capacitor and the resistor by the TSVs of the IPD. An interconnect structure is connected to the IPD.

Abstract: The present invention is directed to DNA sequence encoding angiogenesis-inhibiting recombinant chimeric protein, the chimeric protein per se, the pharmaceutical use of the chimeric protein, and to the pharmaceutical composition containing the recombinant protein and the formulation thereof.

Abstract: A semiconductor device is made by providing a sacrificial substrate, forming a first insulating layer over the sacrificial substrate, forming a first passivation layer over the first insulating layer, forming a second insulating layer over the first passivation layer, forming an integrated passive device over the second insulating layer, forming a wafer support structure over the integrated passive device, removing the sacrificial substrate to expose the first insulating layer after forming the wafer support structure, and forming an interconnect structure over the first insulating layer in electrical contact with the integrated passive device. The integrated passive device includes an inductor, capacitor, or resistor. The sacrificial substrate is removed by mechanical grinding and wet etching. The wafer support structure can be glass, ceramic, silicon, or molding compound.

Abstract: A semiconductor device is made by forming a first conductive layer over a carrier. The first conductive layer has a first area electrically isolated from a second area of the first conductive layer. A conductive pillar is formed over the first area of the first conductive layer. A semiconductor die or component is mounted to the second area of the first conductive layer. A first encapsulant is deposited over the semiconductor die and around the conductive pillar. A first interconnect structure is formed over the first encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The carrier is removed. A portion of the first conductive layer is removed. The remaining portion of the first conductive layer includes an interconnect line and UBM pad. A second interconnect structure is formed over a remaining portion of the first conductive layer is removed.

Abstract: Single AAV vector constructs for regulated expression of an immunoglobulin molecule or fragment thereof and methods of making and using the same are described. The AAV vectors comprise a regulated promoter operably linked to the coding sequence for a first and second immunoglobulin coding sequence, a sequence encoding a self-processing cleavage site between the coding sequence for the first and second immunoglobulin coding sequence and a additional proteolytic cleavage site, which provides a means to remove the self processing peptide sequence from an expressed immunoglobulin molecule or fragment thereof. The vector constructs find utility in enhanced production of biologically active immunoglobulins or fragments thereof in vitro and in vivo.

Abstract: A semiconductor wafer contains a substrate having a plurality of active devices formed thereon. An analog circuit is formed on the substrate. The analog circuit can be an inductor, metal-insulator-metal capacitor, or resistor. The inductor is made with copper. A through substrate via (TSV) is formed in the substrate. A conductive material is deposited in the TSV in electrical contact with the analog circuit. An under bump metallization layer is formed on a backside of the substrate in electrical contact with the TSV. A solder material is deposited on the UBM layer. The solder material is reflowed to form a solder bump. A wire bond is formed on a top surface of the substrate. A redistribution layer is formed between the TSV and UBM. The analog circuit electrically connects through the TSV to the solder bump on the back side of the substrate.

Abstract: A semiconductor device has a first insulation layer formed over a sacrificial substrate. A first conductive layer is formed over the first insulating layer. Conductive pillars are formed over the first conductive layer. A pre-fabricated IPD is disposed between the conductive pillars. An encapsulant is formed around the IPD and conductive pillars. A second insulation layer is formed over the encapsulant. The conductive pillars are electrically connected to the first and second conductive layers. The first and second conductive layers each include an inductor. Semiconductor devices are mounted over the first and second insulating layer and electrically connected to the first and second conductive layers, respectively. An interconnect structure is formed over the first and second insulating layers, respectively, and electrically connected to the first and second conductive layers. The sacrificial substrate is removed.

Abstract: A semiconductor device is made by providing a temporary carrier for supporting the semiconductor device. An integrated passive device (IPD) structure is formed over the temporary carrier. The IPD structure includes an inductor, resistor, and capacitor. Conductive posts are mounted to the IPD structure, and first semiconductor die is mounted to the IPD structure. A wafer molding compound is deposited over the conductive posts and the first semiconductor die. A core structure is mounted to the conductive posts over the first semiconductor die. The core structure includes a semiconductor material. Conductive through silicon vias (TSVs) are formed in the core structure. A redistribution layer (RDL) is formed over the core structure. A second semiconductor die is mounted over the semiconductor device. The second semiconductor die is electrically connected to the core structure.

Abstract: A semiconductor device is made from a semiconductor wafer containing semiconductor die separated by a peripheral region. A conductive via-in-via structure is formed in the peripheral region or through an active region of the device to provide additional tensile strength. The conductive via-in-via structure includes an inner conductive via and outer conductive via separated by insulating material. A middle conductive via can be formed between the inner and outer conductive vias. The inner conductive via has a first cross-sectional area adjacent to a first surface of the semiconductor device and a second cross-sectional area adjacent to a second surface of the semiconductor device. The outer conductive via has a first cross-sectional area adjacent to the first surface of the semiconductor device and a second cross-sectional area adjacent to the second surface of the semiconductor device. The first cross-sectional area is different from the second cross-sectional area.

Abstract: A semiconductor device is made with a conductive via formed through a top-side of the substrate. The conductive via extends vertically through less than a thickness of the substrate. An integrated passive device (IPD) is formed over the substrate. A plurality of first conductive pillars is formed over the first IPD. A first semiconductor die is mounted over the substrate. An encapsulant is formed around the first conductive pillars and first semiconductor die. A second IPD is formed over the encapsulant. An interconnect structure is formed over the second IPD. The interconnect structure operates as a heat sink. A portion of a back-side of the substrate is removed to expose the first conductive via. A second semiconductor die is mounted to the back-side of the substrate. The second semiconductor die is electrically connected to the first IPD and first semiconductor die through the conductive via.

Abstract: The subject invention relates generally to novel biologically active TACI-Fc fusion proteins that bind to BLyS and/or APRIL and uses thereof. The invention also relates to methods for recombinant production of homogeneous TACI-Fc fusion proteins on a large scale.

Abstract: Single AAV vector constructs for expression of an immunoglobulin molecule or fragment thereof and methods of making and using the same are described. The AAV vectors comprise a self-processing cleavage sequence between a first and second immunoglobulin coding sequence allowing for expression of a functional antibody molecule using a single promoter. The vector constructs may further include an additional proteolytic cleavage sequence which provides a means to remove the self processing peptide sequence from an expressed immunoglobulin molecule or fragment thereof. The vector constructs find utility in enhanced production of biologically active immunoglobulins or fragments thereof in vitro and in vivo.