Abstract: The invention relates to an inorganic aqueous surface treatment agent for a single-face electrogalvanized, chromium free surface treated steel plate, a single-face electrogalvanized, chromium-free surface treated steel plate used for fuel tanks and a process of making the same.

Abstract: A light emitting device has a nanostructured layer with nanovoids. The nanostructured layer can be provided below and adjacent to active region or on a substrate or a template below an n-type layer for the active region, so as to reduce strain between epitaxial layers in the light emitting device. A method of manufacturing the same is provided.

Abstract: A light emitting device is provided, which includes an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer. The active-region includes one or more quantum wells each sandwiched by quantum barriers, at least one of the quantum wells has a polarization induced electric field equal to or greater than 106 V/cm, and at least one of the quantum barriers adjacent to the at least one of the quantum wells is doped to generate a PN junction maximum electric field equal to or greater than the polarization induced electric field to substantially cancel out the polarization induced electric field within the at least one of the quantum wells.

Abstract: A light emitting device comprises an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer, wherein the active-region has a wavy structure with nano or micro fluctuations in its thickness direction. The n-type layer comprises crystal facets on its upper surface, and the active-region is conformally formed on the upper surface of the n-type layer and substantially follows the shape of the crystal facets so as to form the wavy structure. A method for fabricating the same is also provided.

Abstract: A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.

Abstract: The invention relates to a method and apparatus for controlling one or more controllable devices (5, 6, 7, 38, 39, 40) in a system. In order to provide the apparatus with a more user friendly interface to control the one or more controllable device in the system, the method comprises capturing an image (50), comprising the one or more controllable devices, displaying the captured image (50), associating local areas (105,106,107,108,109,110) in the captured image (50) to the one or more respective controllable devices (5,6,7,38,39,40) on basis of information associated with the controllable devices in the captured image, receiving a user input indicating a selected one of the local areas in the displayed image, determining a command for the one or more controllable devices from the user input associated with the selected local area; and communicating the command to the one or more controllable devices.

Abstract: A laying head for forming an axially moving hot rolled product into a helical series of rings comprises a quill rotatable about an axis, with a tubular body journalled for rotation between axially spaced bearings, and a nose projecting axially and forwardly from its tubular body. A product guide is carried by the quill. The product guide is configured to form the product into a helical series of rings. A guide trough provides a helical extension of the product guide. Major portions of the product guide and the guide trough are carried on a continuous helical support on the nose of the quill. The guide trough is channel shaped, with a continuous bottom defining the rim of the helical support, and with segmented detachable side walls.

Abstract: A light emitting device with improved light extraction efficiency includes an n-type layer, a p-type layer, an active region sandwiched between the n-type layer and the p-type layer, a characteristic AlGaN layer over which the n-type layer is formed, and an AlN layer on which the characteristic AlGaN layer is formed. The characteristic AlGaN layer has gradually enlarging bandgap width from that of the n-type layer to that of the AlN layer in the direction pointing from the n-type layer to the AlN layer. The light-emitting device may further include a nanoporous AlN layer over which the AlN layer is formed.

Abstract: A pond for cooling and/or recovering salt from a hot aqueous solution of a salt such as potassium chloride produced by solution mining. The pond comprises a plurality of channels arranged side-by-side, each of the channels being defined by a plurality of sides. An inlet is provided in a side of a channel for receiving the aqueous solution, and an outlet is provided in a side of another one of the channels for discharging the aqueous solution. The pond has at least one dike separating the channels from one another. A gap is formed in each dike to permit the aqueous solution to flow between the channels, the gap having a length which is about 10 to about 40 percent of the length of the sides of the channels. Salt is crystallized and the solution is cooled as it passes through the channels of the pond.

Abstract: A light emitting device with improved light extraction efficiency includes an n-type layer, a p-type layer, an active region sandwiched between the n-type layer and the p-type layer, a characteristic AlGaN layer over which the n-type layer is formed, and an AlN layer on which the characteristic AlGaN layer is formed. The characteristic AlGaN layer has gradually enlarging bandgap width from that of the n-type layer to that of the AlN layer in the direction pointing from the n-type layer to the AlN layer. The light-emitting device may further include a nanoporous AlN layer over which the AlN layer is formed.

Abstract: The present invention presents a solid-state semiconductor light emitting device with reduced forward voltage and improved quantum efficiency. The light emitting device is characterized by its multiple-quantum-well active-region with opposite composition grading in the quantum barriers and quantum wells along the device epitaxy direction.

Abstract: A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. The area units are completely isolated or partially separated from each other by the sidewalls. Also provided is a method of fabricating a light-emitting device that comprises a lattice structure, which lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units.

Abstract: A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.

Abstract: A nitride light emitting device comprises a current blocking Schottky junction zone formed below the p-electrode and above the active region so that current injection from the p-electrode to the area of the active region that is vertically shaded by the p-electrode is blocked by the Schottky junction zone. A method for fabricating the same is also provided.

Abstract: A light emitting device with reduced forward voltage Vf by utilizing the excellent lateral conduction of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) structure and, more specifically, by improving the vertical conduction of 2DEG and 2DHG structure by means of vertical conductive passages formed in 2DEG and 2DHG structure. The conductive passages are formed via discontinuities in 2DEG and 2DHG structure. The discontinuities can be in the form of openings by etching 2DEG or 2DHG structure, or in the form of voids by growing 2DEG or 2DHG structure on a rough surface via epitaxy facet control. The discontinuities can be formed by vertical displacement of 2DEG structure. A method is provided for manufacturing a light emitting device with reduced forward voltage same.

Abstract: A light emitting device comprises an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer, wherein the active-region has a wavy structure with nano or micro fluctuations in its thickness direction. The n-type layer comprises crystal facets on its upper surface, and the active-region is conformally formed on the upper surface of the n-type layer and substantially follows the shape of the crystal facets so as to form the wavy structure. A method for fabricating the same is also provided.

Abstract: A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.

Abstract: A light-emitting device includes a transparent substrate with a light emitting structure formed on one side of the substrate and a transparent layer formed on the opposing side of the substrate. The refractive index of the transparent layer is greater than the refractive index of the substrate. A light-emitting device includes a package cup having a reflective sidewall and a light emission surface and a light emitting diode (LED) embedded in the package cup. The LED comprises a transparent substrate and a transparent layer formed on the substrate. The reflective sidewall has a first portion in a central area of the package cup and a second portion in a peripheral area of the package cup, the first portion reflects light emitted from the transparent layer to the second portion and, then, the second portion further reflects the light received from the first portion to the light emission surface of the package cup.

Abstract: In one embodiment according to the invention, there is provided a method of sensing a response of a living cell or virus to a change in conditions. The method comprises applying an essentially constant external electromotive force that causes oscillation of an acoustic wave device at essentially constant amplitude and frequency under steady state conditions. The acoustic wave device has attached at least one living cell or virus. A combined oscillating system including the acoustic wave device and the living cell or virus exhibits a fundamental frequency and at least one harmonic frequency of the combined oscillating system.

Abstract: A rolling mill coil-forming laying head apparatus includes a driven rotating quill that discharges elongated material into an elongated path hollow structure, such as a laying head pipe and a downstream deflector guide trough. The path and deflector guide trough structures are supported by a unistructural permanently-formed housing having integral elongated hollow pathway structure, deflector guide trough, and quill mounting support extensions formed therein.