Abstract: The invention includes methods of forming integrated circuitry. In one implementation, a method of forming an integrated circuit includes forming a plurality of isolation trenches within semiconductive silicon-comprising material. The isolation trenches comprise sidewalls comprising exposed semiconductive silicon-comprising material. An epitaxial silicon-comprising layer is grown from the exposed semiconductive silicon-comprising material sidewalls within the isolation trenches. Electrically insulative trench isolation material is formed within the isolation trenches over the epitaxially-grown silicon-comprising layer. Other aspects and implementations are contemplated.

Abstract: A method for selecting maximum and minimum catalyst particle sizes for use in a multiphase reactor that reflects optimum operating conditions of the reactor is based on a maximum Archimedes number for estimating the maximum particle size and a property of a separation system linked to the reactor to determine the minimum particle size. The maximum Archimedes number could be selected based on a maximum catalyst non-uniformity in the reactor. Additionally, a method for producing hydrocarbons from syngas in a slurry bubble column reactor comprises the use of a plurality of fresh catalyst particles with an optimum size distribution based on a range of Archimedes numbers between about 0.02 and 250 or alternatively based on an average Reynolds number less than about 0.1.

Abstract: A solution for manufacturing a nitride-based heterostructure, semiconductor, device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-III nitride film is grown on a surface of a lower layer. The nitride film is grown by first epitaxially growing a group-III metal film on the surface in a substantially nitrogen-free atmosphere. The group-III metal film is grown such that it covers substantially an entire area of the surface. Next, the group-III metal film is nitridated to form a group-III nitride film. This process can be repeated one or more times to form the layer. In another embodiment of the invention, islands are formed on a surface of a lower layer from a group-III nitride film. The islands can be used to subsequent group-III nitride growth to form the group-III nitride layer.

Abstract: A gas-agitated multiphase reactor system with multiple reaction zones comprising gas-liquid or gas-liquid-solid mixtures that can maximize the production rate while allowing better control of the temperature distribution and better control of the liquid and solid phases in the reactors.

Abstract: A gas-agitated multiphase reactor system that is effective for enabling maximum reactor productivity or minimizing reactor volume comprising at least two stages with or without recycle, wherein inlet gas superficial velocity is at least 20 cm/sec at Fischer-Tropsch synthesis, yielding a total syngas conversion of greater than about 90%, while syngas conversion in each reactor is less than 60%. More specifically, the total reactor volume is held to a minimum such that minimum reactor volume is less than 0.02 cubic meters total reactor volume/(kg C5+/hr production).

Abstract: The invention includes methods of forming integrated circuitry. In one implementation, a method of forming an integrated circuit includes forming a plurality of isolation trenches within semiconductive silicon-comprising material. The isolation trenches comprise sidewalls comprising exposed semiconductive silicon-comprising material. An epitaxial silicon-comprising layer is grown from the exposed semiconductive silicon-comprising material sidewalls within the isolation trenches. Electrically insulative trench isolation material is formed within the isolation trenches over the epitaxially-grown silicon-comprising layer. Other aspects and implementations are, contemplated.

Abstract: An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.

Abstract: The present invention provides an apparatus and method for optimizing the degree of backmixing within a gas agitated multiphase reactor at a given gas linear velocity. The embodiments of the present invention involve novel configurations of the multiphase reactor internal structures. In general, the configurations comprise creating a dense area of internal structures in the central region and/or wall regions of the multiphase reactor.

Abstract: Methods for reducing the average molecular weight of liquid hydrocarbons in a Fischer-Tropsch reactor are disclosed. The preferred embodiments of the present invention are characterized by feeding a hydrocarbon stream, which lowers the average molecular weight of the hydrocarbon liquids inside the reactor, and more preferably by recycling a portion of low-molecular weight hydrocarbon products back into the reactor. Lowering the molecular weight of the hydrocarbon liquids inside the reactor increases the mass transfer and solubility, and diffusivity of the reactants in the hydrocarbons present in the slurry.

Abstract: A process for producing hydrocarbons comprises providing a multi-tubular reactor having at least 100 tubes units containing a catalyst, each tube being between 2 and 5 meters tall and in thermal contact with a cooling fluid; feeding hydrogen and carbon monoxide to each tube at a linear gas superficial velocity less than about 60 cm/s; and converting the gas feedstream to hydrocarbons on the catalyst, wherein the yield of hydrocarbons in each tube is greater than 100 (kg hydrocarbons)/hr/(m3 reaction zone). Each tube may have an internal diameter greater than 2 centimeters. The catalyst may be active for Fischer Tropsch synthesis and may comprise cobalt or iron. The maximum difference in the radially-averaged temperature between two points that are axially spaced along the reactor is less than 15° C., preferably less than 10° C. The catalyst loading or intrinsic activity may vary along the length of the reactor.

Abstract: An improved ohmic contact for a nitride-based semiconductor device is provided. In particular, a semiconductor device and method of manufacturing the semiconductor device are provided in which a semiconductor structure has an ohmic contact that includes a contact layer and a metal layer thereon. The contact layer includes at least Aluminum (Al) and Indium (In), and can further include Gallium (Ga) and/or Nitrogen (N). The molar fraction of Al and/or In can be increased/decreased within the contact layer.

Abstract: A method for water removal in hydrocarbon product reactors operating at Fischer-Tropsch conditions. The water removal decreases the concentration of water in the reactor. In one embodiment, a method of reducing the concentration of water in a Fischer-Tropsch reactor containing a water-rich hydrocarbon product includes removing water from the water-rich hydrocarbon product of the reactor by a water removal means so as to form a water-reduced hydrocarbon product and returning that product to the reactor.

Abstract: A method for optimal production of synthetic diesel and naphtha from a hydrocracker includes hydrocracking a synthetic heavy hydrocarbon feed comprising an a value so as to form a diesel and a naphtha; selecting a desired diesel-to-naphtha ratio; calculating, based on the feed a and the desired diesel-to-naphtha ratio, a target molar ratio of hydrocarbons exiting to hydrocarbons entering the hydrocracker; and adjusting at least one hydrocracking conversion promoting condition so as to achieve said target molar ratio. The present invention further relates to a method for adjusting the overall production of a syngas-to-synthetic hydrocarbons plant in response to market conditions, comprising adjusting at least one hydrocracking conversion promoting condition and/or at least one conversion promoting condition within a Fischer-Tropsch reactor so as to maintain the overall diesel-to-naphtha ratio or to maintain a diesel production rate within a predetermined range of a desired value.

Abstract: The present invention relates to a method and apparatus for water removal in multi-phase reactors operating at Fischer-Tropsch conditions. In a preferred embodiment of the present invention, a method of reducing the concentration of water in a multi-phase reactor for Fisher-Tropsch synthesis containing an expanded slurry bed and a water-rich slurry region includes removing a portion of water from the water-rich slurry from a predetermined region in the reactor, removing the water from the water-rich slurry to form a water-reduced slurry, and returning the water-reduced slurry back to the reactor. Preferably the water-rich slurry region is located between ½ H to H and ½ R to R, where H is the height of the expanded slurry bed and R is the radius of the expanded slurry bed.

Abstract: A method for selecting maximum and minimum catalyst particle sizes for use in a multiphase reactor that reflects optimum operating conditions of the reactor is based on a maximum Archimedes number for estimating the maximum particle size and a property of a separation system linked to the reactor to determine the minimum particle size. The maximum Archimedes number could be selected based on a maximum catalyst non-uniformity in the reactor. Additionally, a method for producing hydrocarbons from syngas in a slurry bubble column reactor comprises the use of a plurality of fresh catalyst particles with an optimum size distribution based on a range of Archimedes numbers between about 0.02 and 250 or alternatively based on an average Reynolds number less than about 0.1.

Abstract: Hemi-spherical grain silicon enhancement with epitaxial silicon for semiconductor assemblies is described. Epitaxial silicon is used to enhance hemi-spherical grain silicon on semiconductor structures, such as storage node capacitor plates for a semiconductor assembly. Methods described include forming an optional amorphous silicon layer as a base to form hemi-spherical grain silicon thereon. The rough texture of the hemi-spherical grain silicon enhances the overall textured surface of the capacitor plate by the addition of epitaxial silicon.

Abstract: A gas-agitated multiphase reactor system for the synthesis of hydrocarbons gives high catalyst productivity and reactor capacity. The system includes operating a multi-phase reactor in the well-mixed gas flow regime, with a Peclet number less than 0.175 and a single pass conversion ranging from 35% to 75%, wherein the inlet superficial gas velocity decreases with the decreasing of the reactor aspect ratio, and is preferably at least 20 cm/sec.

Abstract: Hemi-spherical grain silicon enhancement with epitaxial silicon for semiconductor assemblies is described. Epitaxial silicon is used to enhance hemi-spherical grain silicon on semiconductor structures, such as storage node capacitor plates for a semiconductor assembly. Methods described include forming an optional amorphous silicon layer as a base to firm hemi-shperical grain silicon thereon. The rough texture of the hemi-spherical grain silicon enhances the overall textured surface of the capacitor plate by the addition of epitaxial silicon.

Abstract: Hemi-spherical grain silicon enhancement with epitaxial silicon for semiconductor assemblies is described. Epitaxial silicon is used to enhance hemi-spherical grain silicon on semiconductor structures, such as storage node capacitor plates for a semiconductor assembly. Methods described include forming an optional amorphous silicon layer as a base to form hemi-spherical grain silicon thereon. The rough texture of the hemi-spherical grain silicon enhances the overall textured surface of the capacitor plate by the addition of epitaxial silicon.

Abstract: A method for hydroprocessing a hydrocarbon synthesis product feed to form upgraded fuels and lubricating oils. In a preferred embodiment, the method includes the steps of: (a) contacting a Fischer-Tropsch product with a hydroprocessing catalyst to produce a desired distillate; and (b) counter-currently stripping the desired distillate as it is produced. The method may include distilling the desired distillate or distilling the treated Fischer-Tropsch product.