Patents by Inventor Jiao Song
Jiao Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11846013Abstract: An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.Type: GrantFiled: July 31, 2020Date of Patent: December 19, 2023Assignee: APPLIED MATERIALS, INC.Inventors: David Gunther, Jiao Song, Kirankumar Neelasandra Savandaiah, Irena H. Wysok, Anthony Chih-Tung Chan
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Patent number: 11784033Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.Type: GrantFiled: May 28, 2021Date of Patent: October 10, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Mengxue Wu, Siew Kit Hoi, Jay Min Soh, Yue Cui, Chul Nyoung Lee, Palaniappan Chidambaram, Jiao Song
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Patent number: 11581166Abstract: Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.Type: GrantFiled: July 31, 2020Date of Patent: February 14, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Kirankumar Neelasandra Savandaiah, Jiao Song, David Gunther, Irena H. Wysok, Anthony Chih-Tung Chan
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Publication number: 20220384165Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.Type: ApplicationFiled: May 28, 2021Publication date: December 1, 2022Inventors: Mengxue WU, Siew Kit HOI, Jay Min SOH, Yue CUI, Chul Nyoung LEE, Palaniappan CHIDAMBARAM, Jiao SONG
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Patent number: 11295938Abstract: Methods and apparatus for processing a substrate are provided herein. In embodiments, a magnetron assembly for use in a PVD chamber includes: a base plate having a first side, a second side opposite the first side, and a central axis; a magnet plate rotatably coupled to the base plate, wherein the magnet plate rotates with respect to the base plate about an offset axis; a magnet assembly coupled to the magnet plate offset from the offset axis and configured to rotate about the central axis and the offset axis; a first motor coupled to the base plate to rotate the magnet assembly about the central axis; and a second motor coupled to the magnet plate to control an angular position thereof and to position the magnet assembly in each of a plurality of fixed angular positions defining a plurality of different fixed radii.Type: GrantFiled: June 30, 2020Date of Patent: April 5, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Jiao Song, Anthony Chih-Tung Chan, David Gunther, Kirankumar Neelasandra Savandaiah, Irena H. Wysok
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Publication number: 20220033956Abstract: An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.Type: ApplicationFiled: July 31, 2020Publication date: February 3, 2022Inventors: David GUNTHER, Jiao SONG, Kirankumar Neelasandra SAVANDAIAH, Irena H. WYSOK, Anthony Chih-Tung CHAN
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Publication number: 20220037128Abstract: Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.Type: ApplicationFiled: July 31, 2020Publication date: February 3, 2022Inventors: Kirankumar Neelasandra SAVANDAIAH, Jiao SONG, David GUNTHER, Irena H. WYSOK, Anthony Chih-Tung CHAN
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Publication number: 20210407778Abstract: Methods and apparatus for processing a substrate are provided herein. In embodiments, a magnetron assembly for use in a PVD chamber includes: a base plate having a first side, a second side opposite the first side, and a central axis; a magnet plate rotatably coupled to the base plate, wherein the magnet plate rotates with respect to the base plate about an offset axis; a magnet assembly coupled to the magnet plate offset from the offset axis and configured to rotate about the central axis and the offset axis; a first motor coupled to the base plate to rotate the magnet assembly about the central axis; and a second motor coupled to the magnet plate to control an angular position thereof and to position the magnet assembly in each of a plurality of fixed angular positions defining a plurality of different fixed radii.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Inventors: Jiao SONG, Anthony Chih-Tung CHAN, David GUNTHER, Kirankumar Neelasandra SAVANDAIAH, Irena H. WYSOK
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Patent number: 11189472Abstract: Embodiments of a magnetron assembly and a processing system incorporating same are provided herein. In some embodiments, a magnetron assembly includes a body extending along a central axis of the magnetron assembly; a coolant feed structure extending through the body along the central axis to provide a coolant along the central axis to an area beneath the coolant feed structure; and a rotatable magnet assembly coupled to a bottom of the body and having a plurality of magnets.Type: GrantFiled: July 17, 2017Date of Patent: November 30, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Irena H. Wysok, Kirankumar Savandaiah, Anthony Chih-Tung Chan, Jiao Song, Prashant Prabhu
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Publication number: 20190019658Abstract: Embodiments of a magnetron assembly and a processing system incorporating same are provided herein. In some embodiments, a magnetron assembly includes a body extending along a central axis of the magnetron assembly; a coolant feed structure extending through the body along the central axis to provide a coolant along the central axis to an area beneath the coolant feed structure; and a rotatable magnet assembly coupled to a bottom of the body and having a plurality of magnets.Type: ApplicationFiled: July 17, 2017Publication date: January 17, 2019Inventors: Irena H. Wysok, Kirankumar Savandaiah, Anthony Chih-Tung Chan, Jiao Song, Prashant Prabhu
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Patent number: 9978639Abstract: Methods for forming layers on a substrate having a feature are provided herein. In some embodiments, a method for forming layers on a substrate having a features may include depositing a copper layer within the feature, wherein a thickness of the copper layer disposed on upper corners of an opening of the feature and on an upper portion of a sidewall proximate the upper corners of the feature is greater than the thickness of the copper layer disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature; and exposing the substrate to a plasma formed from a process gas comprising hydrogen (H2) gas to selectively etch the copper layer proximate the upper corners of the opening and the upper portion of the sidewall proximate the upper corners, without substantially etching the copper layer proximate the lower portion of the sidewall proximate the bottom of the feature.Type: GrantFiled: October 27, 2016Date of Patent: May 22, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Siew Kit Hoi, Arvind Sundarrajan, Jiao Song
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Publication number: 20170117180Abstract: Methods for forming layers on a substrate having a feature are provided herein. In some embodiments, a method for forming layers on a substrate having a features may include depositing a copper layer within the feature, wherein a thickness of the copper layer disposed on upper corners of an opening of the feature and on an upper portion of a sidewall proximate the upper corners of the feature is greater than the thickness of the copper layer disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature; and exposing the substrate to a plasma formed from a process gas comprising hydrogen (H2) gas to selectively etch the copper layer proximate the upper corners of the opening and the upper portion of the sidewall proximate the upper corners, without substantially etching the copper layer proximate the lower portion of the sidewall proximate the bottom of the feature.Type: ApplicationFiled: October 27, 2016Publication date: April 27, 2017Inventors: Siew Kit HOI, Arvind SUNDARRAJAN, Jiao SONG
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Patent number: 9569489Abstract: Embodiments of the present invention disclose a method and an apparatus for data preheating, which relate to database technologies, so as to increase a responding speed of a database system, reduce frequent IO on a magnetic disk, and improve overall performance of the database system. The method includes: when a database is started, reading hit ratio information from a flash memory device and reading user configuration information from a hard disk; obtaining a union set of a preset hot data table in the user configuration information and a hot data table in the hit ratio information; determining the total number of to-be-loaded hot data blocks from the union set; according to the storage proportions, determining the to-be-loaded hot data block to be stored into a shared buffer and the flash memory device; and separately storing the to-be-loaded hot data block into the shared buffer and the flash memory device.Type: GrantFiled: May 15, 2014Date of Patent: February 14, 2017Assignee: Huawei Technologies Co., Ltd.Inventors: Kun Dai, Huaizhou Li, Jiao Song
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Publication number: 20140250102Abstract: Embodiments of the present invention disclose a method and an apparatus for data preheating, which relate to database technologies, so as to increase a responding speed of a database system, reduce frequent IO on a magnetic disk, and improve overall performance of the database system. The method includes: when a database is started, reading hit ratio information from a flash memory device and reading user configuration information from a hard disk; obtaining a union set of a preset hot data table in the user configuration information and a hot data table in the hit ratio information; determining the total number of to-be-loaded hot data blocks from the union set; according to the storage proportions, determining the to-be-loaded hot data block to be stored into a shared buffer and the flash memory device; and separately storing the to-be-loaded hot data block into the shared buffer and the flash memory device.Type: ApplicationFiled: May 15, 2014Publication date: September 4, 2014Applicant: Huawei Technologies Co., Ltd.Inventors: Kun Dai, Huaizhou Li, Jiao Song
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Patent number: D933726Type: GrantFiled: July 31, 2020Date of Patent: October 19, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Kirankumar Neelasandra Savandaiah, Jiao Song, David Gunther, Irena H. Wysok, Anthony Chih-Tung Chan
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Patent number: D940765Type: GrantFiled: December 2, 2020Date of Patent: January 11, 2022Assignee: APPLIED MATERIALS, INC.Inventors: David Gunther, Jiao Song, Kirankumar Neelasandra Savandaiah, Madan Kumar Shimoga Mylarappa
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Patent number: D966357Type: GrantFiled: December 31, 2021Date of Patent: October 11, 2022Assignee: APPLIED MATERIALS, INC.Inventors: David Gunther, Jiao Song, Kirankumar Neelasandra Savandaiah, Madan Kumar Shimoga Mylarappa
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Patent number: D1007449Type: GrantFiled: May 7, 2021Date of Patent: December 12, 2023Assignee: APPLIED MATERIALS, INC.Inventors: David Gunther, Kirankumar Neelasandra Savandaiah, Jiao Song, Madan Kumar Shimoga Mylarappa, Yue Cui, Nuno Yen-Chu Chen, Mengxue Wu