Abstract: The present method comprises the steps of imaging the sample under different imaging conditions to acquire multiple images, generating degradation functions for the multiple acquired images, and then generating an image with an improved resolution using the multiple acquired images and the degradation functions corresponding to the acquired images to process the image with the improved resolution.

Abstract: The present invention relates to thermosetting resin compositions that include maleimide-, nadimide- or itaconimide-containing compounds and a metal/carboxylate complex and a peroxide, which is curable at a low temperature at relative short period of time, such as less than about 100° C., for instance 55-70° C., over a period of time of about 30 to 90 minutes. The invention further provides methods of preparing such compositions, methods of applying such compositions to substrate surfaces, and packages and assemblies prepared therewith for connecting microelectronic circuitry.

Abstract: In accordance with the present invention, there are provided filled epoxy-based formulations wherein the filler comprises silver-coated boron nitride particulate material. In accordance with a further embodiment of the present invention, there are provided articles comprising particulate boron nitride having a silver coating on at least a portion of the surface thereof. In additional embodiments of the present invention, there are provided methods for the use of invention articles and formulations.

Abstract: A medical diagnostic device is characterized in that an image processing means (22) includes an image noise removal part (211, 211?) which removes the noise in the generated image of a person to be examined, a signal component enhancement processing part (212, 212?) which generates an enhanced-signal component image by performing signal component enhancement processing of the image from which the noise is removed by the image noise removal part, and an image combining part (213, 213?) which generates a combined image by combining the image of the person to be examined, the image from which the noise is removed by the image noise removal part, and an enhanced-signal component image subjected to signal component enhancement processing by the signal component enhancement processing part.

Abstract: A circuit layout structure includes a metal interlayer dielectric layer surrounding a metal interconnect and a metal pattern within a scrub line. The scrub line is in the vicinity of the metal interlayer dielectric layer and the metal interconnect. The metal pattern or the metal interconnect are suitably segregated to reduce a capacitance charging effect.

Abstract: A method of etching a multi-layer is provided. The multi-layer includes an aluminum layer disposed on a semiconductor substrate and an anti-reflection coating layer disposed on the aluminum layer. The method includes: performing a first etching process to etch the anti-reflection coating layer by providing a first etching gas, wherein the first etching gas includes a chlorine-containing substance; then performing a second etching process to etch the aluminum layer by providing a second etching gas, wherein the second etching gas does not include a chlorine-containing compound.

Abstract: Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer.

Abstract: A rework method of a metal hard mask layer is provided. First, a material layer is provided. A dielectric layer, a first metal hard mask layer, and a patterned first dielectric hard mask layer have been sequentially formed on the material layer. There is a defect on a region of the first metal hard mask layer, and therefore the region of the first metal hard mask layer is not able to be patterned. After that, the patterned first dielectric hard mask layer and the first metal hard mask layer are removed. A planarization process is then performed on the dielectric layer. Next, a second metal hard mask layer and a second dielectric hard mask layer are sequentially formed on the dielectric layer.

Abstract: An interconnection process is described. A substrate having a conductive region formed therein is provided. A dielectric layer is formed on the substrate. A patterned metal hard mask layer having a trench opening is formed on the dielectric layer. A dielectric hard mask layer is formed conformally on the patterned metal hard mask layer and filled in the trench opening. A photoresist pattern is defined to remove a portion of the dielectric hard mask layer and a portion of the dielectric layer to form a first opening in the dielectric layer. The photoresist pattern is removed. A first etching process is performed using the patterned metal hard mask layer as a mask to form a trench and a second opening extending downward from the first opening in the dielectric layer. The second opening exposes the conductive region. A conductive layer is formed in the trench and the second opening.

Abstract: A method for forming an opening is disclosed. First, a semiconductor substrate is provided, in which the semiconductor substrate includes at least one metal interconnects therein. A stacked film is formed on the semiconductor substrate, in which the stacked film includes at least one dielectric layer and one hard mask. The hard mask is used to form an opening in the stacked film without exposing the metal interconnects, and the hard mask is removed thereafter. A barrier layer is later deposited on the semiconductor substrate to cover a portion of the dielectric layer and the surface of the metal interconnects.

Abstract: A two-step method for etching a fuse window on a semiconductor substrate is provided. A semiconductor substrate having thereon a fuse interconnect-wire is formed in a dielectric film stack. The dielectric film stack includes a target dielectric layer overlying said fuse interconnect-wire, an intermediate dielectric layer and a passivation layer. A photoresist layer is formed on the passivation layer with an opening that defines said fuse window. A first dry etching process is performed to non-selectively etch the passivation layer and the intermediate dielectric layer through the opening thereby exposing the target dielectric layer. The thickness of the target dielectric layer after the first dry etching process is then measured. An APC-controlled second dry etching process is performed to etch a portion of the exposed target dielectric layer, thereby reliably forming the fuse window.

Abstract: A method for detecting the operation behavior of the program includes: obtaining the destructive operation behavior of the known virus program; setting the corresponding control and process program according to the destructive operation behavior; making the control and process program get the control right of destructive operation behavior; the destructive operation behavior of the program to be detected calling the corresponding control and process program, the corresponding control and process program recording the operation behavior of the said program to be detected. The method can also return the success response information by the control and process program, so as to induce the program to be detected to perform the next behavior, but the program to be detected don't perform in practicality. That is, the present invention can provide a virtual environment for the program to be detected in order to record a series behavior of it.

Abstract: An interconnection process is described. A substrate having a conductive region formed therein is provided. A dielectric layer is formed on the substrate. A patterned metal hard mask layer having a trench opening is formed on the dielectric layer. A dielectric hard mask layer is formed conformally on the patterned metal hard mask layer and filled in the trench opening. A photoresist pattern is defined to remove a portion of the dielectric hard mask layer and a portion of the dielectric layer to form a first opening in the dielectric layer. The photoresist pattern is removed. A first etching process is performed using the patterned metal hard mask layer as a mask to form a trench and a second opening extending downward from the first opening in the dielectric layer. The second opening exposes the conductive region. A conductive layer is formed in the trench and the second opening.

Abstract: An interconnection process is described. A substrate having a conductive region formed therein is provided. A dielectric layer is formed on the substrate. A patterned metal hard mask layer having a trench opening is formed on the dielectric layer. A dielectric hard mask layer is formed conformally on the patterned metal hard mask layer and filled in the trench opening. A photoresist pattern is defined to remove a portion of the dielectric hard mask layer and a portion of the dielectric layer to form a first opening in the dielectric layer. The photoresist pattern is removed. A first etching process is performed using the patterned metal hard mask layer as a mask to form a trench and a second opening extending downward from the first opening in the dielectric layer. The second opening exposes the conductive region. A conductive layer is formed in the trench and the second opening.

Abstract: A method for identifying unknown virus program, includes: getting the behavior data of the program that would be tested, determining whether the said program is a virus program or not based on the behavior data of said program and the behavior data of pre-setting typical virus program. A method for deleting the virus program, according to the behavior of the virus program, sets and performs an anti-operation which is in reversed to the virus program, and gets back the destroyed data.

Abstract: The present invention discloses a method of recovering data corrupted by a virus program, comprising: obtaining a devastating behavior operation step that can be performed by the virus program; establishing a reverse behavior operation step corresponding to the devastating behavior operation step; performing the corresponding reverse behavior operation step in response to the devastating behavior operation step that can be performed by the virus program. The present invention further provides a method of removing a virus program, comprising: establishing reverse behavior operation steps corresponding to operation steps of the virus program, executing the reverse behavior operation steps and removing the program to be checked.

Abstract: A two-step method for etching a fuse window on a semiconductor substrate is provided. A semiconductor substrate having thereon a fuse interconnect-wire is formed in a dielectric film stack. The dielectric film stack includes a target dielectric layer overlying said fuse interconnect-wire, an intermediate dielectric layer and a passivation layer. A photoresist layer is formed on the passivation layer with an opening that defines said fuse window. A first dry etching process is performed to non-selectively etch the passivation layer and the intermediate dielectric layer through the opening thereby exposing the target dielectric layer. The thickness of the target dielectric layer after the first dry etching process is then measured. An APC-controlled second dry etching process is performed to etch a portion of the exposed target dielectric layer, thereby reliably forming the fuse window.

Abstract: Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.

Abstract: The invention provides a radar system, which can increase a crossrange detection speed in the lane change state by employing a steering angle sensor, etc. loaded on a vehicle without providing additional hardware. A lane-change determining unit receives a yaw rate response from a steering angle sensor, etc., and determines whether the radar-loaded vehicle is in the steering operation for lane change. If the radar-loaded vehicle is in the lane change state, a gain setting unit shifts a tracker gain to a larger value than that in ordinary running, and calculates a range, a crossrange, a relative velocity, etc. relative to a target from the results of tracker processing executed by a filtering unit. By using the calculated range, crossrange, relative velocity, etc., a control determining unit determines whether there is a collision risk, and whether steering operation to avoid a collision is required.

Abstract: In order to occur a collision warning to prevent the collision in accurate by detecting the preceding vehicle or target, a vehicle lane position estimation device comprising a means for measuring a distance between said host vehicle and said preceding vehicle or a oncoming vehicle, a direction angle from said host vehicle, an angular velocity and a velocity of said host vehicle, a means for calculating lateral and longitudinal distance between said host vehicle and said preceding vehicle or said oncoming vehicle, a means for capturing a front stationary object, a means for obtaining movement of the preceding vehicle or position of the oncoming vehicle, and a means to estimate a lane position of said front stationary object from a relationship of the stationary object being captured and the preceding vehicle being obtained and a positional relationship with the oncoming vehicle.