Patents by Inventor Jie Bai

Jie Bai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8829694
    Abstract: Thermosetting resin compositions with low coefficient of thermal expansion are provided herein.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: September 9, 2014
    Assignee: Henkel IP & Holding GmbH
    Inventors: Masashi Horikiri, Jie Bai
  • Publication number: 20140222393
    Abstract: Systems, methods, and software can be used to simulate a fracture treatment. In some aspects, physically separate rock blocks of a subterranean zone are modeled by separate block models. The block model for each physically separate rock block represents intra-block mechanics of the rock block, for example, as a group of discrete block elements. Interactions between adjacent pairs of the rock blocks are modeled by separate joint models. The joint model for each adjacent pair of rock blocks represents inter-block mechanics between the adjacent rock blocks, for example, as pre-defined joints. The block models and joint models are used to simulate an injection treatment of the subterranean zone.
    Type: Application
    Filed: February 1, 2013
    Publication date: August 7, 2014
    Inventors: Jie Bai, Samuel Bryant Johnson, Harold Grayson Walters
  • Publication number: 20140162765
    Abstract: Automatic trading of virtual characters in online applications comprises publishing virtual characters by a first user in a trading system that involves verification at an application server and locking of the selected virtual characters at the application server. This can ensure that the trading of virtual characters is true, reliable and prompt, and reduces the loss to users arising from the trading of virtual characters.
    Type: Application
    Filed: December 11, 2013
    Publication date: June 12, 2014
    Applicant: Tencent Technology (Shenzhen) Company Limited
    Inventors: Jie Bai, Bao Sheng Luo, Liang Chen, Yan Xiang Yu, Jiang Tao Li, Chong Ru Wang, Jin Hui Xie, Zhen Ming Chen, Li Chun Li, Wei Hong Mo, Sha Li, Xiao Hua Ran, Jie Chen, Yao Hua Tan, Gan Lei, Tao Hu, Jin Liu
  • Publication number: 20140008822
    Abstract: Thermosetting resin compositions useful for liquid compression molding encapsulation of a silicon wafer are provided. The so-encapsulated silicon wafers offer improved resistance to warpage, compared to unencapsulated wafers or wafers encapsulated with known encapsulation materials.
    Type: Application
    Filed: March 14, 2013
    Publication date: January 9, 2014
    Applicant: Henkel Corporation
    Inventor: Jie Bai
  • Publication number: 20130346035
    Abstract: Techniques for evaluating a fluid flow through a wellbore include identifying an input characterizing a fluid flow through a wellbore; identifying an input characterizing a geometry of the wellbore; generating a model of the wellbore based on the inputs characterizing the fluid flow and the geometry of the wellbore; simulating the fluid flow through the wellbore based on evaluating the model with a numerical method that determines fluid flow conditions at a first boundary location uphole and adjacent to a perforation of a plurality of perforations in the wellbore and at a second boundary location downhole and adjacent to the perforation; and preparing, based on the fluid flow conditions determined with the numerical method, an output associated with the simulated fluid flow through the wellbore for display to a user.
    Type: Application
    Filed: June 22, 2012
    Publication date: December 26, 2013
    Applicant: HALLIBURTON ENERGY SERVICES, INC.
    Inventors: SRINATH MADASU, SAMUEL BRYANT JOHNSON, JIE BAI
  • Publication number: 20130123300
    Abstract: A compound of Formula I, or an isomer, pharmaceutically acceptable salt or solvate thereof, is provided. Also, a composition containing a compound of Formula I, or an isomer, pharmaceutically acceptable salt or solvate thereof, and a pharmaceutically acceptable carrier, excipient or diluents, is provided. Further, use of a compound of Formula I, or an isomer, pharmaceutically acceptable salt or solvate thereof for anti-apoptosis is provided, preventing or treating a disease or disorder associated with apoptosis; especially for protecting cardiomyocyte, preventing or treating a disease or disorder associated with cardiomyocyte apoptosis.
    Type: Application
    Filed: May 14, 2010
    Publication date: May 16, 2013
    Applicant: CHINESE PLA GENERAL HOSPITAL
    Inventors: Kunlun He, Song Li, Wu Zhong, Juan Liu, Lili Wang, Xin Li, Guoliang Hu, Long Long, Junhai Xiao, Zhibing Zheng, Wei Li, Ruijun Li, Chunlei Liu, Jie Bai
  • Patent number: 8384196
    Abstract: Methods and structures are provided for formation of devices on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: February 26, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Zhiyuan Cheng, James Fiorenza, Jennifer M. Hydrick, Anthony J. Lochtefeld, Ji-Soo Park, Jie Bai, Jizhong Li
  • Publication number: 20130024876
    Abstract: The present invention discloses a universal driving method and a driver of a mobile broadband device. The method includes: a WWAN server sending an OID service request to a driver; the driver sending the OID service request to a WWAN device; the WWAN device responding after parsing the OID service request, and sending a response result to the driver; the driver sending the response result to the WWAN server. The present invention is implemented by delivering the parse processing of the OID service to the WWAN device, and the driver only has a transparent transmission function, therefore the driver is universal and is able to adapt to WWAN devices in different standards; the AT module is deleted, and it's I/O function utilizes the existing reading and writing threads, thus simplifying the complex process in the existing AT module, and guaranteeing the stability and robustness of the device drivers.
    Type: Application
    Filed: August 23, 2010
    Publication date: January 24, 2013
    Applicant: ZTE CORPORATION
    Inventors: Feixiong Chen, Qingji Guo, Shaofeng Ma, Zhao Zuo, Zhibing Tian, Jie Bai
  • Publication number: 20120274757
    Abstract: The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image.
    Type: Application
    Filed: November 8, 2010
    Publication date: November 1, 2012
    Inventors: Jie Bai, Kenji Nakahira, Atsushi Miyamoto, Chie Shishido, Hideyuki Kazumi
  • Patent number: 8278761
    Abstract: A circuit layout structure includes a metal interlayer dielectric layer surrounding a metal interconnect and a metal pattern within a scrub line. The scrub line is in the vicinity of the metal interlayer dielectric layer and the metal interconnect. The metal pattern or the metal interconnect are suitably segregated to reduce a capacitance charging effect.
    Type: Grant
    Filed: November 10, 2009
    Date of Patent: October 2, 2012
    Assignee: United Microelectronics Corp.
    Inventors: Ching Long Tsai, Shi Jie Bai, Shan Liu, Yu Zhang
  • Publication number: 20120199876
    Abstract: Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.
    Type: Application
    Filed: April 13, 2012
    Publication date: August 9, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jie Bai, Ji-Soo Park, Anthony J. Lochtefeld
  • Patent number: 8173551
    Abstract: Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.
    Type: Grant
    Filed: September 7, 2007
    Date of Patent: May 8, 2012
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jie Bai, Ji-Soo Park, Anthony J. Lochtefeld
  • Publication number: 20120068226
    Abstract: Methods and structures are provided for formation of devices on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.
    Type: Application
    Filed: September 23, 2011
    Publication date: March 22, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jennifer Hydrick, Jizhong Li, Zhiyuan Cheng, James G. Fiorenza, Jie Bai, Ji-Soo Park, Anthony Lochtefeld
  • Patent number: 8110342
    Abstract: A method for forming an opening is disclosed. First, a semiconductor substrate is provided, in which the semiconductor substrate includes at least one metal interconnects therein. A stacked film is formed on the semiconductor substrate, in which the stacked film includes at least one dielectric layer and one hard mask. The hard mask is used to form an opening in the stacked film without exposing the metal interconnects, and the hard mask is removed thereafter. A barrier layer is later deposited on the semiconductor substrate to cover a portion of the dielectric layer and the surface of the metal interconnects.
    Type: Grant
    Filed: August 18, 2008
    Date of Patent: February 7, 2012
    Assignee: United Microelectronics Corp.
    Inventors: Feng Liu, Shi-Jie Bai, Hong Ma, Chun-Peng Ng, Ye Wang
  • Patent number: 8034697
    Abstract: Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: October 11, 2011
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: James Fiorenza, Anthony Lochtefeld, Jie Bai, Ji-Soo Park, Jennifer Hydrick, Jizhong Li, Zhiyuan Cheng
  • Publication number: 20110187847
    Abstract: The present method comprises the steps of imaging the sample under different imaging conditions to acquire multiple images, generating degradation functions for the multiple acquired images, and then generating an image with an improved resolution using the multiple acquired images and the degradation functions corresponding to the acquired images to process the image with the improved resolution.
    Type: Application
    Filed: July 3, 2009
    Publication date: August 4, 2011
    Inventors: Jie Bai, Kenji Nakahira, Atsushi Miyamoto
  • Publication number: 20110133330
    Abstract: The present invention relates to thermosetting resin compositions that include maleimide-, nadimide- or itaconimide-containing compounds and a metal/carboxylate complex and a peroxide, which is curable at a low temperature at relative short period of time, such as less than about 100° C., for instance 55-70° C., over a period of time of about 30 to 90 minutes. The invention further provides methods of preparing such compositions, methods of applying such compositions to substrate surfaces, and packages and assemblies prepared therewith for connecting microelectronic circuitry.
    Type: Application
    Filed: February 15, 2011
    Publication date: June 9, 2011
    Applicant: Henkel Corporation
    Inventors: Jie Bai, Shashi K. Gupta
  • Publication number: 20110129673
    Abstract: In accordance with the present invention, there are provided filled epoxy-based formulations wherein the filler comprises silver-coated boron nitride particulate material. In accordance with a further embodiment of the present invention, there are provided articles comprising particulate boron nitride having a silver coating on at least a portion of the surface thereof. In additional embodiments of the present invention, there are provided methods for the use of invention articles and formulations.
    Type: Application
    Filed: December 1, 2009
    Publication date: June 2, 2011
    Inventors: Shashi Gupta, Jie Bai, Tadashi Takano, GuiXiang Yang
  • Publication number: 20110125030
    Abstract: A medical diagnostic device is characterized in that an image processing means (22) includes an image noise removal part (211, 211?) which removes the noise in the generated image of a person to be examined, a signal component enhancement processing part (212, 212?) which generates an enhanced-signal component image by performing signal component enhancement processing of the image from which the noise is removed by the image noise removal part, and an image combining part (213, 213?) which generates a combined image by combining the image of the person to be examined, the image from which the noise is removed by the image noise removal part, and an enhanced-signal component image subjected to signal component enhancement processing by the signal component enhancement processing part.
    Type: Application
    Filed: April 2, 2009
    Publication date: May 26, 2011
    Inventors: Jie Bai, Kenji Nakahira, Atsushi Miyamoto
  • Publication number: 20110108991
    Abstract: A circuit layout structure includes a metal interlayer dielectric layer surrounding a metal interconnect and a metal pattern within a scrub line. The scrub line is in the vicinity of the metal interlayer dielectric layer and the metal interconnect. The metal pattern or the metal interconnect are suitably segregated to reduce a capacitance charging effect.
    Type: Application
    Filed: November 10, 2009
    Publication date: May 12, 2011
    Inventors: Ching Long Tsai, Shi Jie Bai, Shan Liu, Yu Zhang