Patents by Inventor Jie Lee
Jie Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220365452Abstract: A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.Type: ApplicationFiled: July 26, 2022Publication date: November 17, 2022Inventors: Chih-Jie LEE, Shih-Chun HUANG, Shih-Ming CHANG, Ken-Hsien HSIEH, Yung-Sung YEN, Ru-Gun LIU
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Patent number: 11467509Abstract: A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.Type: GrantFiled: March 29, 2021Date of Patent: October 11, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Jie Lee, Shih-Chun Huang, Shih-Ming Chang, Ken-Hsien Hsieh, Yung-Sung Yen, Ru-Gun Liu
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Optical and optoelectronic assemblies including micro-spacers, and methods of manufacturing the same
Patent number: 11460659Abstract: The present disclosure describes optical and optoelectronic assemblies that, in some cases, include screen-printed micro-spacers, as well as methods for manufacturing such assemblies and modules. For example, an optoelectronic device mounted on a substrate can include an optical sub-assembly including a first optical element and a first micro-spacer on the optical element. The optical sub-assembly can be disposed over the optoelectronic device, with a first air or vacuum gap separating the first optical element from the optoelectronic device, and the first micro-spacer laterally surrounding the first air or vacuum gap.Type: GrantFiled: December 17, 2019Date of Patent: October 4, 2022Assignee: AMS Sensors Singapore Pte. LtdInventors: Guo Xiong Wu, Ming Jie Lee, Simon Gubser, Qichuan Yu, Joon Heng Tan -
Publication number: 20220155692Abstract: A method includes receiving a layout for fabricating a mask, determining a first target contour corresponding to a first set of process conditions, determining a second target contour corresponding to a second set of process conditions, simulating a first potential modification to the layout under the first set of process conditions to generate a first simulated contour, simulating a second potential modification to the layout under the second set of process conditions to generate a second simulated contour, evaluating costs of the first and second potential modifications based on comparing the first and second simulated contours to the first and second target contours, respectively, and providing the layout and one of the first and second potential modifications having a lower cost for fabricating the mask. The first set of process conditions is different from the second set of process conditions.Type: ApplicationFiled: February 7, 2022Publication date: May 19, 2022Inventors: Dong-Yo Jheng, Ken-Hsien Hsieh, Shih-Ming Chang, Chih-Jie Lee, Shuo-Yen Chou, Ru-Gun Liu
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Patent number: 11243472Abstract: A method includes receiving a layout that includes a shape to be formed on a photomask and determining a plurality of target lithographic contours for the shape, wherein the plurality of target lithographic contours includes a first target lithographic contour for a first set of process conditions and a second target lithographic contour for a second set of process conditions, performing a lithographic simulation of the layout to produce a first simulated contour at the first set of process conditions and a second simulated contour at the second set of process conditions, determining a first edge placement error between the first simulated contour and the first target lithographic contour and a second edge placement error between the second simulated contour and the second target lithographic contour, and determining a modification to the layout based on the first edge placement error and the second edge placement error.Type: GrantFiled: June 8, 2020Date of Patent: February 8, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Dong-Yo Jheng, Ken-Hsien Hsieh, Shih-Ming Chang, Chih-Jie Lee, Shuo-Yen Chou, Ru-Gun Liu
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Publication number: 20210286274Abstract: A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.Type: ApplicationFiled: March 29, 2021Publication date: September 16, 2021Inventors: Chih-Jie LEE, Shih-Chun HUANG, Shih-Ming CHANG, Ken-Hsien HSIEH, Yung-Sung YEN, Ru-Gun LIU
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Patent number: 10962892Abstract: A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.Type: GrantFiled: December 20, 2018Date of Patent: March 30, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Jie Lee, Shih-Chun Huang, Shih-Ming Chang, Ken-Hsien Hsieh, Yung-Sung Yen, Ru-Gun Liu
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Publication number: 20200301289Abstract: A method includes receiving a layout that includes a shape to be formed on a photomask and determining a plurality of target lithographic contours for the shape, wherein the plurality of target lithographic contours includes a first target lithographic contour for a first set of process conditions and a second target lithographic contour for a second set of process conditions, performing a lithographic simulation of the layout to produce a first simulated contour at the first set of process conditions and a second simulated contour at the second set of process conditions, determining a first edge placement error between the first simulated contour and the first target lithographic contour and a second edge placement error between the second simulated contour and the second target lithographic contour, and determining a modification to the layout based on the first edge placement error and the second edge placement error.Type: ApplicationFiled: June 8, 2020Publication date: September 24, 2020Inventors: Dong-Yo Jheng, Ken-Hsien Hsieh, Shih-Ming Chang, Chih-Jie Lee, Shuo-Yen Chou, Ru-Gun Liu
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Patent number: 10678142Abstract: Various examples of a technique for performing optical proximity correction and for forming a photomask are provided herein. In some examples, a layout is received that includes a shape to be formed on a photomask. A plurality of target lithographic contours are determined for the shape that includes a first target contour for a first set of process conditions and a second target contour that is different from the first target contour for a second set of process conditions. A lithographic simulation of the layout is performed to produce a first simulated contour at the first set of process conditions and a second simulated contour at the second set of process conditions. A modification to the layout is determined based on edge placement errors between the first simulated contour and the first target contour and between the second simulated contour and the second target contour.Type: GrantFiled: August 7, 2018Date of Patent: June 9, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Dong-Yo Jheng, Ken-Hsien Hsieh, Shih-Ming Chang, Chih-Jie Lee, Shuo-Yen Chou, Ru-Gun Liu
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OPTICAL AND OPTOELECTRONIC ASSEMBLIES INCLUDING MICRO-SPACERS, AND METHODS OF MANUFACTURING THE SAME
Publication number: 20200124831Abstract: The present disclosure describes optical and optoelectronic assemblies that, in some cases, include screen-printed micro-spacers, as well as methods for manufacturing such assemblies and modules. For example, an optoelectronic device mounted on a substrate can include an optical sub-assembly including a first optical element and a first micro-spacer on the optical element. The optical sub-assembly can be disposed over the optoelectronic device, with a first air or vacuum gap separating the first optical element from the optoelectronic device, and the first micro-spacer laterally surrounding the first air or vacuum gap.Type: ApplicationFiled: December 17, 2019Publication date: April 23, 2020Inventors: Guo Xiong Wu, Ming Jie Lee, Simon Gubser, Qichuan Yu, Joon Heng Tan -
Publication number: 20200103766Abstract: A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.Type: ApplicationFiled: December 20, 2018Publication date: April 2, 2020Inventors: Chih-Jie LEE, Shih-Chun HUANG, Shih-Ming CHANG, Ken-Hsien HSIEH, Yung-Sung YEN, Ru-Gun LIU
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Optical and optoelectronic assemblies including micro-spacers, and methods of manufacturing the same
Patent number: 10551596Abstract: The present disclosure describes optical and optoelectronic assemblies that, in some cases, include screen-printed micro-spacers, as well as methods for manufacturing such assemblies and modules. For example, micro-spacers can be applied on a first optical element layer, and a second optical element layer can be provided on the first micro-spacers. By providing the second optical element layer on the first micro-spacers, the second optical element layer and the first optical element layer can be separated from one another by air or vacuum gaps each of which is laterally surrounded by a portion of the first micro-spacers.Type: GrantFiled: June 23, 2017Date of Patent: February 4, 2020Assignee: Ams Sensors Singapore Pte. Ltd.Inventors: Guo Xiong Wu, Ming Jie Lee, Simon Gubser, Qichuan Yu, Joon Heng Tan -
Patent number: 10510932Abstract: The present disclosure describes wafer-level processes for fabricating optoelectronic device subassemblies that can be mounted, for example, to a circuit substrate, such as a flexible cable or printed circuit board, and integrated into optoelectronic modules that include one or more optical subassemblies stacked over the optoelectronic device subassembly. The optoelectronic device subassembly can be mounted onto the circuit substrate using solder reflow technology even if the optical subassemblies are composed of materials that are not reflow compatible.Type: GrantFiled: February 14, 2019Date of Patent: December 17, 2019Assignee: AMS SENSORS SINGAPORE PTE. LTD.Inventors: Hartmut Rudmann, Qichuan Yu, Simon Gubser, Bojan Tesanovic, Xu Yi, Eunice Ho Hui Ong, Hongyuan Liu, Ji Wang, Edmund Koon Tian Lua, Myo Paing, Jian Tang, Ming Jie Lee
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Patent number: 10488766Abstract: A lithography system is provided. The lithography system includes a mask and an optical module. The optical module is configured to optically form an invisible pellicle over the mask to protect the mask from contaminant particles. As a solid pellicle used in the prior arts is omitted, the critical dimension (CD) error from the boarder effect due to reflection of some light by the solid pellicle and the exposure radiation energy consumption caused by the solid pellicle can be avoided.Type: GrantFiled: February 27, 2018Date of Patent: November 26, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chiu-Hsiang Chen, Shih-Ming Chang, Chih-Jie Lee, Han-Wei Wu, Yung-Sung Yen, Ru-Gun Liu
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Patent number: 10418245Abstract: A method includes receiving a first target pattern of an integrated circuit (IC) that includes two first target features and two second target features. The method further includes deriving a second target pattern based on the first target pattern and a directed self-assembly (DSA) process, wherein the first target pattern is to be produced by a process that includes performing the DSA process with a guide pattern derived from the second target pattern. The second target pattern includes a third feature and a fourth feature. The third feature is designed for producing the two first target features with the DSA process, and the fourth feature is designed for producing the two second target features with the DSA process. The method further includes inserting one or more sub-DSA-resolution assistant features (SDRAF) into the second target pattern, the one or more SDRAF connecting the third and fourth features.Type: GrantFiled: July 31, 2017Date of Patent: September 17, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Jie Lee, Joy Cheng
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Publication number: 20190214533Abstract: The present disclosure describes wafer-level processes for fabricating optoelectronic device subassemblies that can be mounted, for example, to a circuit substrate, such as a flexible cable or printed circuit board, and integrated into optoelectronic modules that include one or more optical subassemblies stacked over the optoelectronic device subassembly. The optoelectronic device subassembly can be mounted onto the circuit substrate using solder reflow technology even if the optical subassemblies are composed of materials that are not reflow compatible.Type: ApplicationFiled: February 14, 2019Publication date: July 11, 2019Applicant: ams Sensors Singapore Pte. Ltd.Inventors: Hartmut Rudmann, Qichuan Yu, Simon Gubser, Bojan Tesanovic, Xu Yi, Eunice Ho Hui Ong, Hongyuan Liu, Ji Wang, Edmund Koon Tian Lua, Myo Paing, Jian Tang, Ming Jie Lee
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Publication number: 20190146362Abstract: A lithography system is provided. The lithography system includes a mask and an optical module. The optical module is configured to optically form an invisible pellicle over the mask to protect the mask from contaminant particles.Type: ApplicationFiled: February 27, 2018Publication date: May 16, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chiu-Hsiang CHEN, Shih-Ming CHANG, Chih-Jie LEE, Han-Wei WU, Yung-Sung YEN, Ru-Gun LIU
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Publication number: 20190146355Abstract: Various examples of a technique for performing optical proximity correction and for forming a photomask are provided herein. In some examples, a layout is received that includes a shape to be formed on a photomask. A plurality of target lithographic contours are determined for the shape that includes a first target contour for a first set of process conditions and a second target contour that is different from the first target contour for a second set of process conditions. A lithographic simulation of the layout is performed to produce a first simulated contour at the first set of process conditions and a second simulated contour at the second set of process conditions. A modification to the layout is determined based on edge placement errors between the first simulated contour and the first target contour and between the second simulated contour and the second target contour.Type: ApplicationFiled: August 7, 2018Publication date: May 16, 2019Inventors: Dong-Yo Jheng, Ken-Hsien Hsieh, Shih-Ming Chang, Chih-Jie Lee, Shuo-Yen Chou, Ru-Gun Liu
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Patent number: 10243111Abstract: The present disclosure describes wafer-level processes for fabricating optoelectronic device subassemblies that can be mounted, for example, to a circuit substrate, such as a flexible cable or printed circuit board, and integrated into optoelectronic modules that include one or more optical subassemblies stacked over the optoelectronic device subassembly. The optoelectronic device subassembly can be mounted onto the circuit substrate using solder reflow technology even if the optical subassemblies are composed of materials that are not reflow compatible.Type: GrantFiled: June 23, 2017Date of Patent: March 26, 2019Assignee: ams Sensors Singapore Pte. Ltd.Inventors: Hartmut Rudmann, Qichuan Yu, Simon Gubser, Bojan Tesanovic, Xu Yi, Eunice Ho Hui Ong, Hongyuan Liu, Ji Wang, Edmund Koon Tian Lua, Myo Paing, Jian Tang, Ming Jie Lee
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Publication number: 20190035630Abstract: A method includes receiving a first target pattern of an integrated circuit (IC) that includes two first target features and two second target features. The method further includes deriving a second target pattern based on the first target pattern and a directed self-assembly (DSA) process, wherein the first target pattern is to be produced by a process that includes performing the DSA process with a guide pattern derived from the second target pattern. The second target pattern includes a third feature and a fourth feature. The third feature is designed for producing the two first target features with the DSA process, and the fourth feature is designed for producing the two second target features with the DSA process. The method further includes inserting one or more sub-DSA-resolution assistant features (SDRAF) into the second target pattern, the one or more SDRAF connecting the third and fourth features.Type: ApplicationFiled: July 31, 2017Publication date: January 31, 2019Inventors: Chih-Jie Lee, Joy Cheng