Abstract: A power supply system with dynamic current sharing includes a current-sharing bus and a plurality of power supply units connected to each other through the current-sharing bus. The current-sharing bus provides a first current signal. Each power supply unit includes a local current bus for providing a second current signal. The active current-sharing unit compares the first current signal with the second current signal to generate a compensation voltage. The current-averaging unit compares a difference value between an average value of the first current signal and an average value of the second current signal to generate an average voltage. The droop current unit receives the second current signal to generate a droop compensation voltage. The integration calculation unit makes output currents of the power supply units be approximately equal according to the compensation voltage, the average voltage, and the droop compensation voltage.

Abstract: An apparatus for monitoring strain in an optical chip in silicon photonics platform. The apparatus includes a silicon photonics substrate shared with the optical chip. Additionally, the apparatus includes an optical input configured in the silicon photonics substrate to supply an input signal of a single wavelength. The apparatus further includes a first waveguide arm and a second waveguide arm embedded in the silicon photonics substrate to form an on-chip interferometer. The second waveguide arm forms a delay line being disposed at a region in or adjacent to the optical chip. The on-chip interferometer is configured to generate an interference pattern serving as an indicator of strain distributed at the region in or adjacent to the optical chip. The interference pattern is caused by a temperature-independent phase shift at the single wavelength of the interferometer between the first waveguide arm and the second waveguide arm.

Abstract: An integrated circuit (IC) device includes a plurality of first TAP cells of a first semiconductor type, and a plurality of second TAP cells of a second semiconductor type different from the first semiconductor type. The plurality of first TAP cells is arranged in at least two columns, the at least two columns adjacent each other in a first direction and extending in a second direction transverse to the first direction. Each of the plurality of first TAP cells has a first length in the first direction. The plurality of second TAP cells includes at least one second TAP cell extending in the first direction between the at least two columns over a second length greater than the first length of each of the plurality of first TAP cells in the first direction.

Abstract: An oxygen reduction device in an ion source region of inductively coupled plasma is provided. The oxygen reduction device includes a torch and an inflation sleeve. An upper end of the inflation sleeve is sealed and sleeved outside the torch, and a lower end of the inflation sleeve and the torch are arranged at an interval to form an inflation gap. An inflation hole communicating with the inflation gap is formed in an outer side wall of the inflation sleeve. An outer side face of the lower end of the inflation sleeve is protruded outwards to form an annular gas guiding protrusion. The annular gas guiding protrusion is configured for being arranged opposite to a sampling cone base arranged below the torch, and a gas outlet gap is formed between the annular gas guiding protrusion and the sampling cone base.

Abstract: A flat drill bit includes a stem body, a cut flute part provided axially from an end of the stem body and being generally flat-shaped, and a threaded guiding part provided axially from an end of the cut flute part. The cut flute part includes two longitudinal wings which are configured to be rotationally symmetrical to each other about a longitudinal central axis (O) of the flat drill bit. Each longitudinal wing is formed with a cutting edge at the end of the cut flute part from which the threaded guiding part extends. A rotating trajectory profile caused by the cutting edge when the flat drill bit rotates is inclined towards the stem body and is at an angle (a) relative to the longitudinal central axis (O), and the angle (a) is in a range between 84° and 86°.

Abstract: A cleaning process of wafer polishing pad, the process includes providing a wafer polishing pad, performing a planarization process with the wafer polishing pad, leaving a residue on the wafer polishing pad after the planarization process, and performing a cleaning step with a cleaning nozzle to remove the residue, the cleaning nozzle comprises at least one Y-shaped pipe, one end of which is a water outlet, and the other two ends are respectively a water inlet and an air inlet, wherein a cleaning liquid flows from the water inlet to the water outlet, and a pressurized gas flows in from the air inlet.

Abstract: A connector attached to the end face of a supported member where fasteners are driven through the connector into the end face of the supported member, and then the supported member with the attached connector is positioned to interface on the supporting member with jutting peripheral attachment areas of the connector exposed and available for receiving fasteners that will attach the connector and the fence stringer to the supporting member.

Abstract: An electrostatic discharge (ESD) protection circuit includes a first diode, a second diode and an ESD clamp circuit. The first diode is in a semiconductor wafer, and is coupled to an input output (IO) pad. The second diode is in the semiconductor wafer, and is coupled to the first diode and the TO pad. The ESD clamp circuit is in the semiconductor wafer, and is coupled to the first diode and the second diode. The ESD clamp circuit includes a first signal tap region in the semiconductor wafer. The first signal tap region is coupled to a first voltage supply. The first diode is coupled to and configured to share the first signal tap region with the ESD clamp circuit.

Abstract: A method for making a multimode interference (MMI) coupler with an arbitrary desired splitting ratio includes forming a thin-film of silicon-nitride material overlying a SOI substrate. The method further includes obtaining geometric parameters of a standard MIMI coupler including a rectangular MMI block and one input port and two output ports in taper shape with one of standard splitting ratios under self-imaging principle which is close to the desired splitting ratio. Additionally, the method includes tunning the input port to an off-center position at front edge of the MMI block. The method further includes making a first output port to a first off-center position flushing with a side edge of the MMI block, adjusting a second output port to a second off-center position. The method includes tunning the MMI block to obtain optimized geometric parameters for approaching the selected arbitrary splitting ratio, and etching the thin-film of silicon-nitride material.

Abstract: An integrated circuit design method includes receiving an integrated circuit design, and determining a floor plan for the integrated circuit design. The floor plan includes an arrangement of a plurality of functional cells and a plurality of tap cells. Potential latchup locations in the floor plan are determined, and the arrangement of at least one of the functional cells or the tap cells is modified based on the determined potential latchup locations.

Abstract: Provided herein are CMP compositions, and methods for polishing surfaces comprising amorphous carbon, spin-on carbon (SoC), and/or diamond like carbon (DLC) films. The CMP compositions of the present disclosure contain at least one abrasive having zirconia particles and may also contain at least one metal-containing oxidizer.

Abstract: The present invention relates to a pair of non-naturally occurring nucleic acid probes for detecting a polynucleotide analyte for fluorescence in situ hybridization (FISH) wherein the probes comprise a first nucleic acid probe comprising a first probe binding arm that is complementary to a first probe target region of a bridge probe and a first polynucleotide analyte binding arm that is complementary to a first analyte target region of a polynucleotide analyte and a second nucleic acid probe comprising a second probe binding arm that is complementary to a second probe target region of the bridge probe. The binding of the pair of probes to target polynucleotides permits the binding of the bridge probe to allow detection of the polynucleotide analyte. It also provides a probe system comprising said pair of nucleic acid probes and methods of detecting polynucleotide analytes in a sample.

Abstract: A column cap connector for mounting and securing a beam to a post of a building including a central web portion and upwardly extending walls disposed along longitudinal edges thereof, wherein a lower portion of the beam fits within the walls, downwardly extending legs formed from the seat and alternatively from the seat and the walls of the connector attach the connector to the post with projecting tabs attached to the seat to support the connector on the post.

Abstract: A semiconductor device includes a first doped zone and a second doped zone in a first semiconductor material, the first doped zone being separated from the second doped zone; an isolation structure between the first doped zone and the second doped zone; and a first line segment over a top surface of the first doped zone, where the ends of the first line segment and the ends of the second line are over the isolation structure. The first line segment and the second line segment have a first width; and a dielectric material is between the first line segment and the second line segment and over the isolation structure. The first width is substantially similar to a width of a gate electrode in the semiconductor device.

Abstract: The disclosure provides a border touch module, including a cover plate, a shielding layer, a first adhesive layer, a sensing electrode layer, a second adhesive layer, an opaque adhesive, and a backlight layer. The shielding layer is disposed below the cover plate. The first adhesive layer is disposed below the shielding layer. The sensing electrode layer is disposed below the first adhesive layer. The second adhesive layer is disposed below the sensing electrode layer. The opaque adhesive is disposed below the sensing electrode layer. The backlight layer is disposed below the opaque adhesive and is in the same plane as the second adhesive layer. The shielding layer has a backlight pattern, and the opaque adhesive has a light source hole. When the backlight layer is in the state of driving backlight, the light illuminates the backlight pattern of the shielding layer through the light source hole.

Abstract: Provided are a solar cell and a light emitting device with low leakage current and low cost, using ZnO fine particles. A p-type ZnO layer (p-type layer) (14) made primarily of p-type ZnO fine particles (931) is formed. P-side electrodes (16) are formed at a plurality of regions on the p-type layer (14). A thin insulating layer (18) is formed between an n-type layer (13) and the p-type layer (14). In the insulating layer (18), openings are formed at regions A each not overlapping the p-side electrodes (16) and being apart from them in a plan view. In the configuration, by thus making the p-side electrodes (16) apart from the regions A, the length of a current path in the p-type layer (14) can be made substantially larger than the layer thickness. Accordingly, even when n-type ZnO fine particles (932) are incorporated in the p-type layer (14), it is possible to interpose some of the p-type ZnO fine particles (931) along a leakage current path caused by the incorporation, and thereby cut off the current path.

Abstract: An impact-resistant polystyrene resin includes a continuous phase and a plurality of particles dispersed in the continuous phase. The average particle size of the particles is about 0.1 to 4.0 µm, and the average distance between the particles is about 0.3 to 5.0 µm. The impact-resistant polystyrene resin is made from a polystyrene composition including a polystyrene plastic, a styrene block copolymer, a processing aid, and an antioxidant.

Abstract: A method for fabricating an integrated circuit is provided. The method includes etching a first recess in a semiconductor structure; forming a first doped epitaxial feature in the first recess; and forming a second doped epitaxial feature over the first doped epitaxial feature, wherein the second doped epitaxial feature has a conductive type opposite to a conductive type of the first doped epitaxial feature.

Abstract: An ESD clamp circuit has an ESD detection circuit connected between a first terminal and a second terminal, with a first output node and a second output node. The ESD detection circuit is configured to output respective first and second control signals at the first and second output nodes in response to an ESD event. A discharge circuit includes a p-type transistor having a source, a drain and a gate, with the gate connected to the first output node. An n-type transistor has a source, a drain and a gate, with the gate connected to the second output node. The drain is connected to the drain of the p-type transistor. The discharge circuit is configured to establish a first ESD discharge path from the first terminal, through the p-type transistor and the n-type transistor, to the second terminal, and to further establish a second ESD discharge path in parallel with the first ESD discharge path. The second ESD discharge path includes a parasitic silicon controlled rectifier (SCR).

Abstract: An amino-imine metal complex represented by Formula I, its preparation method and an application thereof are provided. The complex is used as a main catalyst in catalysts for olefin polymerization, and can catalyze the polymerization of ethylene at a relatively high temperature to prepare branched polyethylene having high molecular weight.