Abstract: Disclosed are a wireless remote control method and system for controllable rotary sliding guiding drilling. An upper end of a controllable rotary sliding guiding drilling mechanism is provided with a drill rod; and the wireless remote control system for controllable rotary sliding guiding drilling further comprises: an MWD arranged at a lower end of the controllable rotary sliding guiding drilling mechanism; a bent screw drill tool mounted at a lower end of the MWD; a drill bit mounted at a lower end of the bent screw drill tool, the drill bit being connected with the bent screw drill tool through a connector; and a clutch module mounted on the controllable rotary sliding guiding drilling mechanism, the clutch module comprising an electromagnetic valve, a processor, an internal pipe pressure sensor, an external pipe pressure sensor and a wireless data transmission module.

Abstract: Apparatuses, systems, and methods for multi-TRP by a UE, including out of order delivery of PDSCH, PUSCH, and/or DL ACK/NACK. The UE may receive, from a base station, a configuration that may include multiple control resource set (CORESET) pools and each CORESET pool may be associated with an index value. The UE may determine that at least two DCIs of the multiple DCIs end at a common symbol and determine, based on one or more predetermined rules, when the UE may be scheduled to receive PDSCHs, transmit PUSCHs, and/or transmit ACK/NACKs from CORESETs associated with the at least two DCIs.

Abstract: Apparatuses, systems, and methods for multi-TRP by a UE, including out of order delivery of PDSCH, PUSCH, and/or DL ACK/NACK. The UE may receive, from a base station, a configuration that may include multiple control resource set (CORESET) pools and each CORESET pool may be associated with an index value. The UE may determine that at least two DCIs of the multiple DCIs end at a common symbol and determine, based on one or more predetermined rules, when the UE may be scheduled to receive PDSCHs, transmit PUSCHs, and/or transmit ACK/NACKs from CORESETs associated with the at least two DCIs.

Abstract: A first next generation Node B (gNB) is configured to establish a first backhaul communication link with a second gNB as a parent gNB, schedule at least one of a third gNB or a UE for a UL transmission to the first gNB using UL beam management parameters and UL transmission parameters, indicate to the second gNB first beam management parameters for the second gNB to use for transmitting a DL transmission to the first gNB on the first backhaul link and first DL transmission parameters for the DL transmission so that the DL transmission will be received simultaneously with the UL transmission and when the first beam management parameters and the first DL transmission parameters are determined to be used by the second gNB, receiving the DL transmission from the second gNB simultaneously with the UL transmission from the at least one of the third gNB or the UE.

Abstract: A communication system provides reliable wideband communications with reduced power consumption in a user equipment (UE) receiver. A UE may include receiver circuitry to receive a radio frequency (RF) signal from a wireless network and output an analog baseband signal. The RF signal includes M copies of a duplicated signal in a frequency domain. The analog baseband signal includes the M copies of the duplicated signal uniformly offset from one another in the frequency domain by a bandwidth F and including a gap between adjacent copies. The UE further includes an anti-aliasing analog filter an analog to digital converter (ADC). The ADC samples an output of the anti-aliasing analog filter at a sampling frequency selected to obtain a digital baseband signal comprising a combined digital copy of the M copies of the duplicated signal folded over each other.

Abstract: Methods and apparatus are provided for a UE to determine a cell global identity (CGI) of a target cell.

Abstract: Measurement resources are often limited in 5G and 4G-LTE communications. As a result, SMTC and CSI-RS measurement windows will occasionally be assigned to the same resource elements of a signal frame. This results in a collision that must be resolved, since both measurements cannot be performed simultaneously. The collision can be resolved using restriction, where overlapping resource elements are assigned to either the SMTC or the CSI-RS measurements, or can be resolved using measurement sharing, where overlapping resource elements are divided among the two measurements according to a measurement sharing factor. Various factors, including priority or window periodicity may be taken into account by the measurement rules that dictate collision resolution.

Abstract: Embodiments of the present disclosure relate to methods, a terminal device, a network device, and computer program products for SCell management in wireless communication. A terminal device receives from a network device configuration information for configuring a triggering mode. The triggering mode is for triggering activation of a secondary cell of the terminal device and a transmission of a temporary reference signal in the secondary cell. Based on the configured triggering mode, the terminal device receives first triggering information on the activation of the secondary cell and second triggering information on the transmission of the temporary reference signal for performing the activation of the secondary cell. In this way, it is possible to reduce the latency of activation/de-activation procedure for SCG and secondary cells.

Abstract: Embodiments describe methods, computer-readable media, and apparatuses for configuring, transmitting, and using sounding reference signals.

Abstract: Systems, methods, and circuitries are provided for performing sidelink communication. An example method generates SCI stage 1 and stage 2 for transmitting a transport block (TB) to a user equipment device (UE). The method includes determining the type of sidelink communication for transmitting the TB. An SCI stage 2 format is selected based on the type of sidelink communication. An SCI stage 2 payload is encoded in accordance with the selected SCI stage 2 format. The selected SCI stage 2 format value is encoded in an SCI stage 1 payload. The SCI stage 1 payload and SCI stage 2 payload are transmitted to the UE.

Abstract: Embodiments of the present disclosure relate to uplink transmission with repetitions. According to embodiments of the present disclosure, a user equipment (UE) comprises a transceiver configured to communicate with a network; and a processor communicatively coupled to the transceiver and configured to perform operations. The operations comprise determining first Channel State Information (CSI) and second CSI based on at least one of a previous channel and interference measurement or a latest channel and interference measurement. The operations further comprise transmitting the first CSI via the transceiver to the network with a first beam, the first CSI multiplexed with a first repetition of an uplink transmission with the first beam. The operations further comprise transmitting the second CSI via the transceiver to the network with a second beam, the second CSI multiplexed with a second repetition of the uplink transmission with the second beam.

Abstract: A base station configures a user equipment (UE) to perform measurements. The base station configures the UE for at least one channel state information (CSI) measurement report including an indication of first reference signal (RS) resources for a first transmission and reception point (TRP) and second RS resources for a second TRP, the first RS resources comprising a first plurality of beamformed RS and the second RS resource comprising a second plurality of beamformed RS to be received simultaneously at the UE, wherein the UE is further configured to select a first beam from the first plurality of beamformed RS and a second beam from the second plurality of beamformed RS and receives the at least one CSI measurement report comprising measurements for the first beam and the second beam.

Abstract: A user equipment is configured to receive a reference signal when secondary cell (SCell is to be activated. The UE receives a secondary cell (SCell) activation indication for activating an SCell, receives a reference signal (RS) triggering indication for triggering an RS prior to an expected SCell activation period, performs measurements on the triggered RS and activates the SCell based on the RS measurements.

Abstract: The present invention relates to a three-dimensional acid fracturing method for carbonate reservoirs in long intervals, which sequentially comprises the following steps: S1: based on the distribution characteristics of porosity and permeability of the reservoir where the candidate well is located, the reservoirs are divided into Class I, Class II and Class III, and the required acid fracturing fracture density range ?ir of different types of reservoirs is determined according to the increase of production; S2: Determine the most economical fracture number Ne when the economic net present value NPV of candidate wells reaches the maximum in the fifth year based on interval length of different types of reservoirs in candidate wells and acid fracturing fracture density range ?ir determined by S1; S3: Determine the three-dimensional acid fracturing segmented fracture arrangement technology according to the completion mode of the candidate well and the most economical fracture number Ne determined by S2; S4: Based

Abstract: An electrostatic discharge (ESD) protection device including: a substrate including: a first, second and third doped regions, the second doped region disposed between the first and third doped regions, the second doped region has a first conductivity type and a first doping concentration and the first and third doped regions have a second conductivity type and a second doping concentration; first and second doped terminal regions disposed within the first and second doped regions, respectively; and a doped island region disposed within the second doped region, the first and second doped terminal regions and doped island region have the second conductivity type and a third doping concentration, the third doping concentration higher than the first and second doping concentrations; and conductive terminals respectively coupled to the doped terminal regions; and an insulation layer arranged on the substrate between the conductive terminals and covering at least the second doped region.

Abstract: Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure includes a first well and a second well in a semiconductor substrate. The first well has a first conductivity type, and the second well has a second conductivity type opposite to the first conductivity type. The structure further includes a first terminal having a doped region that has a portion in the first well, and a second terminal including a second doped region that has a portion in the first well and a third doped region in the second well. The first and second doped regions have the second conductivity type, the third doped region has the first conductivity type, and the second doped region is positioned in a lateral direction between the first doped region and the third doped region.

Abstract: Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure includes a first well and a second well in a semiconductor substrate. The first well has a first conductivity type, and the second well has a second conductivity type opposite to the first conductivity type. The structure further includes a first terminal having a doped region that has a portion in the first well, and a second terminal including a second doped region that has a portion in the first well and a third doped region in the second well. The first and second doped regions have the second conductivity type, the third doped region has the first conductivity type, and the second doped region is positioned in a lateral direction between the first doped region and the third doped region.

Abstract: A rollable display device, including a housing and a display panel, is provided. The housing includes an accommodating housing, and the accommodating housing includes an internal accommodating space. The display panel at least includes a first display region and a second display region and can be switched between a rolled-up state and an unrolled state. When in the rolled-up state, the first display region is rolled up in an accommodating space, and the second display region is located outside the accommodating housing and is configured to display. When in the unrolled state, the first display region is rolled out of the accommodating housing.

Abstract: An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a substrate, an active region, a first terminal region, and a second terminal region. The substrate includes dopants having a first dopant conductivity. The active region is arranged over the substrate and has an upper surface. The first terminal region and the second terminal region are arranged in the active region laterally spaced apart from each other. The first terminal region and the second terminal region each include a well region having dopants of the first dopant conductivity and a first doped region arranged in the well region. The first doped region includes dopants having a second dopant conductivity.

Abstract: Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure includes first and second wells in the semiconductor substrate, a first terminal including a first doped region in the first well, and a second terminal including a second doped region in the second well. The first well and the second doped region have a first conductivity type, and the second well and the first doped region have a second conductivity type opposite to the first conductivity type. First and second conductor layers are positioned on the semiconductor substrate. The first conductor layer partially overlaps with the first well, and the second conductor layer partially overlaps with the second well. A third doped region, which has the second conductivity type, is laterally positioned in the semiconductor substrate between the first and second conductor layers.