Abstract: A commissioning tool for granting a network joining permit to network devices for joining a network includes a network install code generating unit for generating network install codes (NICs), a memory unit configured to save the NICs, a transmitter configured to transmit the NICs generated by the network install code generating unit to network devices and a network coordinating device. The commissioning tool also includes a user inter-face configured to receive user commands to transmit the NICs generated by the network install code generation unit, and a network control unit, the network control unit being in functional communication with the memory unit, the transmitter and the user interface. The network control unit is configured to instruct the transmitter to transmit the NICs upon receiving a command from the user over the user interface.

Abstract: The present application discloses a flexible display device, including: a supporting base, wherein the supporting base includes a first sliding base and a second sliding base, and a flexible display screen, wherein the flexible display screen includes a first part, a second part, and a connecting part connecting the first part with the second part. The first part is fixedly connected to the first sliding base, and the second part is slidably connected to the second sliding base along a first direction. The first sliding base and the second sliding base are slid in opposite directions along the first direction, thereby changing a length of the connecting part along the first direction.

Abstract: Disclosed is a semiconductor structure including a semiconductor substrate (e.g., a P-substrate) and a symmetric BDSCR. The BDSCR includes, within the substrate, a first well (e.g., a low-doped deep Nwell) and, within the first well, symmetric side sections and a middle section positioned laterally between the side sections. Each side section includes: second and third wells (e.g., Pwells), where the third well is shallower than and has a higher conductivity level than the second well. Each middle section includes multiple floating wells including: two fourth wells (e.g., Nwells), which have a higher conductivity level than the first well, and a fifth well (e.g., another Pwell), which is positioned laterally between and shallower than the fourth wells. By incorporating the floating wells into the middle section, high current tolerance is improved.

Abstract: An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a substrate, an active region, a first terminal region, and a second terminal region. The substrate includes dopants having a first dopant conductivity. The active region is arranged over the substrate and has an upper surface. The first terminal region and the second terminal region are arranged in the active region laterally spaced apart from each other. The first terminal region and the second terminal region each include a well region having dopants of the first dopant conductivity and a first doped region arranged in the well region. The first doped region includes dopants having a second dopant conductivity.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to improved turn-on voltage of high voltage electrostatic discharge device and methods of manufacture. The structure comprises a high voltage NPN with polysilicon material on an isolation structure located at a base region, the polysilicon material extending to at least one of a collector and emitter of a bipolar junction transistor (BJT), and the polysilicon material completely covering the base region of the BJT.

Abstract: An ESD protection device may include a substrate having first and second substrate layers, and first and second bridged regions. Each substrate layer may include first and second border regions and a middle region laterally therebetween. Each bridged region may be arranged within the middle region and a respective border region of the second substrate layer. The middle region of the second substrate layer may be laterally narrower than the middle region of the first substrate layer. Each border region of the second substrate layer may be partially arranged over the middle region of the first substrate layer and partially arranged over a respective border region of the first substrate layer. The border regions of the substrate layers, and the bridged regions may have a first conductivity type, and the middle regions of the substrate layers may have a second conductivity type different from the first conductivity type.

Abstract: An electrostatic discharge (ESD) protection device including: a substrate including: a first, second and third doped regions, the second doped region disposed between the first and third doped regions, the second doped region has a first conductivity type and a first doping concentration and the first and third doped regions have a second conductivity type and a second doping concentration; first and second doped terminal regions disposed within the first and second doped regions, respectively; and a doped island region disposed within the second doped region, the first and second doped terminal regions and doped island region have the second conductivity type and a third doping concentration, the third doping concentration higher than the first and second doping concentrations; and conductive terminals respectively coupled to the doped terminal regions; and an insulation layer arranged on the substrate between the conductive terminals and covering at least the second doped region.

Abstract: The present invention belongs to the technical field of organic supermolecules, and specifically discloses a 3,4-ethylenedioxythiophene (EDOT) polymer capable of supramolecular assembly with carbon-based materials, and a preparation method thereof. The polymer of the present invention is a polymer with 3,4-ethylenedioxythiophene-2-acetylene as the main chain and alkoxy as the side chain. The polymer is prepared as follows: subjecting EDOT to bromination to give 2,5-dibromo-3,4-ethylenedioxythiophene; then reacting 2,5-dibromo-3,4-ethylenedioxythiophene and trimethylsilyl acetylene (TMSA) to give bis(trimethylsilyl)-3,4-ethylenedioxythiophene; removing trimethylsilyl (TMS) protecting groups from the bis(trimethylsilyl)-3,4-ethylenedioxythiophene, and subjecting the obtained compound and 2,5-dibromo-3,4-ethylenedioxythiophene to Sonogashira coupling to give an EDOT polymer.

Abstract: An electrostatic discharge (ESD) protection device may be provided, including a substrate having a conductivity region arranged therein, a first terminal region and a second terminal region arranged within the conductivity region, and a field distribution structure. The field distribution structure may include an intermediate region arranged within the conductivity region between the first terminal region and the second terminal region, an isolation element arranged over the intermediate region, and a first conductive plate and a second conductive plate arranged over the isolation element. The first conductive plate may be electrically connected to the first terminal region and the second conductive plate may be electrically connected to the second terminal region.

Abstract: The present invention belongs to the technical field of organic supermolecules, and specifically discloses a 3,4-ethylenedioxythiophene (EDOT) polymer capable of supramolecular assembly with carbon-based materials, and a preparation method thereof. The polymer of the present invention is a polymer with 3,4-ethylenedioxythiophene-2-acetylene as the main chain and alkoxy as the side chain. The polymer is prepared as follows: subjecting EDOT to bromination, to give 2,5-dibromo-3,4-ethylenedioxythiophene; then reacting 2,5-dibromo-3,4-ethylenedioxythiophene and trimethylsilyl acetylene (TMSA) to give bis(trimethylsilyl)-3,4-ethylenedioxythiophene; removing trimethylsilyl (TMS) protecting groups from the bis(trimethylsilyl)-3,4-ethylenedioxythiophene, and subjecting the obtained compound and 2,5-dibromo-3,4-ethylenedioxythiophene to Sonogashira coupling to give an EDOT polymer.

Abstract: This application discloses a calibration method, a calibration system, and a calibration board. The calibration board includes checkerboard cells arranged on a surface of the calibration board, where at least one dot is arranged in each of the checkerboard cells, the dots of the calibration board include at least a first feature dot and a second feature dot, the first feature dot and the second feature dot are arranged in the checkerboard cells according to a random rule or a specific rule, and a diameter of the first feature dot is greater than a diameter of the second feature dot. The calibration board in this application improves the stability and accuracy of calibration board detection by utilizing characteristics such as a high detection accuracy and a strong anti-blur capability of a dot mark, combining with corner points of checkerboard cells.

Abstract: A token is extracted from a Natural Language input. A phonetic pattern is computed corresponding to the token, the phonetic pattern including a sound pattern that represents a part of the token when the token is spoken. New data is created from data of the phonetic pattern, the new data including a syllable sequence corresponding to the phonetic pattern. A state of a data storage device is changed by storing the new data in a matrix of syllable sequences corresponding to the token. An option is selected that corresponds to the token by executing a fuzzy matching algorithm using a processor and a memory, the selecting of the option is based on a syllable sequence in the matrix.

Abstract: An ESD protection device may include a substrate having first and second substrate layers, and first and second bridged regions. Each substrate layer may include first and second border regions and a middle region laterally therebetween. Each bridged region may be arranged within the middle region and a respective border region of the second substrate layer. The middle region of the second substrate layer may be laterally narrower than the middle region of the first substrate layer. Each border region of the second substrate layer may be partially arranged over the middle region of the first substrate layer and partially arranged over a respective border region of the first substrate layer. The border regions of the substrate layers, and the bridged regions may have a first conductivity type, and the middle regions of the substrate layers may have a second conductivity type different from the first conductivity type.

Abstract: The present application discloses a flexible display device, including: a supporting base, wherein the supporting base includes a first sliding base and a second sliding base, and a flexible display screen, wherein the flexible display screen includes a first part, a second part, and a connecting part connecting the first part with the second part. The first part is fixedly connected to the first sliding base, and the second part is slidably connected to the second sliding base along a first direction. The first sliding base and the second sliding base are slid in opposite directions along the first direction, thereby changing a length of the connecting part along the first direction.

Abstract: A semiconductor device includes a substrate; a collector including a buried layer within the substrate, a first well region over a first portion of the buried layer, and a first conductivity region at least partially within the first well region; a base including a second well region over a second portion of the buried layer and laterally adjacent to the first well region, and a second conductivity region at least partially within the second well region; an emitter including a third conductivity region at least partially within the second conductivity region; an isolation element between the first and the third conductivity regions; a conductive plate on the isolation element and electrically connected with the first conductivity region. The buried layer, the first well region, the first and the third conductivity regions have a first conductivity type; the second well region and the second conductivity region have a second conductivity type.

Abstract: An electrostatic discharge (ESD) protection device may be provided, including a substrate having a conductivity region arranged therein, a first terminal region and a second terminal region arranged within the conductivity region, and a field distribution structure. The field distribution structure may include an intermediate region arranged within the conductivity region between the first terminal region and the second terminal region, an isolation element arranged over the intermediate region, and a first conductive plate and a second conductive plate arranged over the isolation element. The first conductive plate may be electrically connected to the first terminal region and the second conductive plate may be electrically connected to the second terminal region.

Abstract: Provided is a flexible display device. The flexible display device includes a flexible screen and a fixing rod. The fixing rod is connected to the flexible screen through a rotating device. The fixing rod has a first end and a second end. The fixing rod is capable of rotating to such position that the fixing rod is parallel to an expansion direction of the flexible screen and the second end of the fixing rod is detachably connected to the flexible screen. With the rotating device, the fixing rod of the flexible display device can be switched between a fixing state and a non-fixing state. In the fixing state, the flexible screen is fixed by the fixing rod to prevent deforming of the flexible screen.

Abstract: The present invention belongs to the technical field of organic supermolecules, and specifically discloses a 3,4-ethylenedioxythiophene (EDOT) polymer capable of supramolecular assembly with carbon-based materials, and a preparation method thereof The polymer of the present invention is a polymer with 3,4-ethylenedioxythiophene-2-acetylene as the main chain and alkoxy as the side chain. The polymer is prepared as follows: subjecting EDOT to bromination, to give 2,5-dibromo-3,4-ethylenedioxythiophene; then reacting 2,5-dibromo-3,4-ethylenedioxythiophene and trimethylsilyl acetylene (TMSA) to give bis(trimethylsilyl)-3,4-ethylenedioxythiophene; removing trimethylsilyl (TMS) protecting groups from the bis(trimethylsilyl)-3,4-ethylenedioxythiophene, and subjecting the obtained compound and 2,5-dibromo-3,4-ethylenedioxythiophene to Sonogashira coupling to give an EDOT polymer.

Abstract: A substrate is provided, including a base substrate; a film layer on the base substrate, the film layer including an opening; a fingerprint identification circuit located in the opening; and a connection line connected with the fingerprint identification circuit, the connection line being at least partly embedded in the film layer. A display panel and a display device including the substrate are also provided.

Abstract: An ESD protection device may include a substrate, a first conductivity region arranged at least partially within the substrate, a second conductivity region arranged at least partially within the first conductivity region, third and fourth conductivity regions arranged at least partially within the second conductivity region, and first and second terminal portions arranged at least partially within the third and fourth conductivity regions respectively. The third and fourth conductivity regions may be spaced apart from each other. The substrate and the second conductivity region may have a first conductivity type. The first conductivity region, third conductivity region, fourth conductivity region and first and second terminal portions may have a second conductivity type different from the first conductivity type. The first and second terminal portions may have higher doping concentrations than the third and fourth conductivity regions respectively.