Abstract: A substrate processing apparatus including a processing container including a processing space, a substrate support extending in a first direction and a second direction perpendicular to the second direction, and configured to support a substrate in the processing container, a fluid supply device configured to supply a processing fluid in a supercritical state to the processing space through a container supply pipe, and a shower head assembly configured to diffuse the processing fluid supplied from the fluid supply device into the processing space. The shower head assembly includes a first shower head having a first diameter, and a second shower head arranged between the first shower head and the substrate and having a second diameter. The processing container is separated from the shower head assembly in a third direction perpendicular to the first direction and the second direction, such that a flow path is formed between the processing container and the shower head assembly.

Abstract: An electronic device may include a PPG sensor including a light emitter that applies a current in a specified range and emits a light signal corresponding to the current and a light detector that amplifies a received light signal by applying one of a plurality of gain values, a memory that stores a plurality of sets of PPG models corresponding to the plurality of gain values and including a current value and PPG level data corresponding to the current value, and at least one processor electrically connected to the PPG sensor and the memory.

Abstract: An organic light-emitting device and display apparatus, the device including a first electrode; a second electrode facing the first electrode; an emission layer between the first and second electrode; a hole control layer between the first electrode and the emission layer; and an electron control layer between the emission layer and the second electrode, wherein the emission layer includes a plurality of sub-emission layers to emit light having different wavelengths, at least portions of the plurality of sub-emission layers do not overlap one another, the plurality of sub-emission layers include: a first sub-emission layer including a first color light-emitting dopant, and a second sub-emission layer including a second color light-emitting dopant, the first and second sub-emission layers each include a hole-transporting and electron-transporting host which form an exciplex, and a triplet energy of the exciplex is equal to or greater than triplet energies of the first and second color light-emitting dopant.

Abstract: Provided is a plasma control method including applying gas to a chamber having a wafer loaded therein, generating plasma by applying both radio frequency (RF) power associated with a first voltage at a first frequency and a second voltage at a second frequency that is lower than the first frequency to the chamber for a first time, cutting off the RF power after the first time elapses, continuously applying the second voltage of the second frequency to the chamber for a second time, cutting off the second voltage after the second time elapses, continuously maintaining an off state of the RF power and an off state of the voltage for a third time, and performing an etching process on the wafer by using the plasma formed by the RF power and the second voltage after the third time elapses, wherein the RF power is a sine wave, and the second voltage is a square wave of a periodic pulse form.

Abstract: A method of manufacturing a semiconductor device includes placing a wafer in a plasma chamber, the chamber including a first power generator configured to generate plasma ions in the chamber, and a second power generator configured to accelerate the plasma ions toward the wafer, generating a radio frequency (RF) signal having a repeated periodic sinusoidal waveform in an on state and a steady off state by the first power generator, and generating a direct current (DC) bias signal having a repeated periodic non-sinusoidal waveform in an on state and a steady off state by the second power generator. The RF signal and the DC bias signal are offset from each other. The method further includes performing a plasma process on a layer on the wafer, using the RF signal and DC bias signal.

Abstract: In a general aspect, an assembly includes a panel of organic substrate core material having a cavity defined therein, a module substrate disposed in the cavity, and a semiconductor die disposed on the module substrate. The assembly also includes a layer of prepreg organic substrate material, and a metal layer. The module substrate and the semiconductor die are embedded in the cavity by the layer of prepreg organic substrate material and the metal layer. The metal layer is electrically coupled with at least one of the semiconductor die or the module substrate.

Abstract: A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

Abstract: An integrated substrate may include a conductor layer; a heat sink including a plurality of fins extending therefrom; and a dielectric layer including boron nitride chemically bonded to the conductor layer and to the heat sink with an epoxy.

Abstract: Disclosed is a method for programming a storage device including a nonvolatile memory device and a storage controller for storing multi-bit data, programming, by the storage controller, the multi-bit data into the nonvolatile memory device based on a pre-programming operation, reading state group data of the multi-bit data generated in the nonvolatile memory device based on a program result of the pre-programming operation, and performing, by the storage controller, error correction decoding on the state group data.

Abstract: A semiconductor package includes a substrate, a first semiconductor chip disposed on the substrate, and a second semiconductor chip disposed on a top surface of the first semiconductor chip. The first semiconductor chip includes a conductive pattern disposed on the top surface of the first semiconductor chip and a first protective layer covering the top surface of the first semiconductor chip and at least partially surrounds the conductive pattern. The second semiconductor chip includes a first pad that contacts a first through electrode on a bottom surface of the second semiconductor chip. A second protective layer surrounds the first pad and covers the bottom surface of the second semiconductor chip. A third protection layer fills a first recess defined in the second protective layer to face the inside of the second protective layer. The first protective layer and the third protective layer contact each other.

Abstract: Disclosed according to various embodiments is an electronic device comprising: a first communication circuit configured to provide first wireless communication within a first frequency range; a second communication circuit configured to provide second wireless communication within a second frequency range; a processor operably connected to the first communication circuit and the second communication circuit; and a memory operably connected to the processor, wherein the memory has instructions stored therein which cause, when executed, the processor to: establish a channel for communication with a first base station, by using the first communication circuit; receive, from the first base station, a first message containing information about at least one frequency at which to assess a communication status by using the second communication circuit; assess statuses for communication with one or more second base stations, by using the second communication circuit on the basis of the first message; transmit a second

Abstract: A transportation head for a microchip transfer device capable of minimizing mechanical and chemical damage to a microchip, a microchip transfer device having same, and a transfer method thereby, and the transportation head includes a head body having a pickup area and a dummy area; a first protruding pin disposed in the pickup area of the head body; and a liquid droplet attached to the first protruding pin.

Abstract: Certain embodiments of the disclosure relate to an apparatus and a method for translating a text included in an image by using an external electronic device in an electronic device. One method comprises displaying a picture comprising an object bearing text at a location within the picture on a display, extracting the text, generating another text from the extracted text, and automatically overlaying the another text on the object in another picture comprising the object at another location within the another picture on the display.

Abstract: Provided is a protein complex including a botulinum toxin translocation domain and endolysin. When used, the protein complex including a botulinum translocation domain and endolysin according to the present invention exhibits an antibacterial effect and thus can be used as an antibacterial composition or an antibiotic.

Abstract: An error correction code (ECC) decoder includes a syndrome generator and a burst error corrector. The syndrome generator generates global syndrome data and local syndrome data using input data and a parity check matrix based on a constacyclic code. The burst error corrector corrects a correctable error included in the input data using the global syndrome data and the local syndrome data. The input data includes a plurality of data bits arranged along a first direction and a second direction. The ECC decoder simultaneously corrects a single burst error and a multi-bit error. The single burst error occurs on two or more symbols arranged along the first direction in the input data, and each symbol includes two or more data bits. The multi-bit error randomly occurs on two or more data bits in the input data.

Abstract: A case includes a base plate, a hole formed through the base plate, a pattern that is on one surface of the base plate and includes a plurality of crests and a plurality of troughs. The case further includes an inclined area that is between the hole and the pattern, and at least one step that is between the inclined area and the hole, in which a first angle that the inclined area forms with a central axis of the hole is greater than a second angle that is an angle of view through the hole.

Abstract: An electronic device is provided. The electronic device includes a camera module, a sensor module, at least one processor configured to be operatively connected to the camera module and the sensor module, and a memory configured to be operatively connected to the at least one processor.

Abstract: Embodiments provide a light-emitting device that includes a first electrode, a second electrode facing the first electrode, and light-emitting units between the first electrode and the second electrode.

Abstract: A semiconductor chip including a semiconductor substrate having first and second surfaces, a transistor on the first surface, a first interlayer dielectric layer on the transistor, a second interlayer dielectric layer on the first interlayer dielectric layer, a wiring line in the second interlayer dielectric layer, a first conductive pad on the second interlayer dielectric layer, a first passivation layer on the second interlayer dielectric layer, a second conductive pad in the first passivation layer, a through via penetrating the semiconductor substrate and the first interlayer dielectric layer to come into connection with the wiring line, a second passivation layer on the second surface, and a third conductive pad in the second passivation layer and connected to the through via. The first passivation layer has a first thickness 0.4 to 0.6 times a second thickness between the first surface and a top surface of the second passivation layer.

Abstract: In a general aspect, an electronic device assembly includes a circuit including at least one semiconductor die, and a signal lead electrically coupled with the circuit. The signal lead has a hole defined therethrough. The assembly further includes an electrically conductive signal pin holder disposed in the hole of the signal lead. The electrically conductive signal pin holder is electrically coupled with the signal lead. The assembly also includes a molding compound encapsulating, at least, the circuit; a portion of the signal lead including the hole; and a portion of the electrically conductive signal pin holder. An open end of the electrically conductive signal pin holder is accessible outside the molding compound.