Abstract: Provided are a method and system for testing a semiconductor memory device using an internal clock signal of the semiconductor memory device as a data strobe signal. The internally-generated data strobe signal may be delayed to synchronize with test data. Because a test device need not supply the data strobe signal, the number of semiconductor memory modules that can be simultaneously tested can be increased, and an average test time for a unit memory module can be decreased.

Abstract: In one aspect, a photoresist composition includes a cross-linking agent, a photosensitive material, an organic solvent, and a compound having a chemical structure represented by formulae (1) or (2) herein. The cross-linking agent includes at least one epoxy group and/or at least two hydroxyl groups.

Abstract: The present invention relates to a method for preparing a styrenic olefin. The method of the present invention comprises the steps of: adding a catalyst and a solvent in a reactor and heating the reactor to create a reflux state; adding an alcohol starting material to the reactor dropwise at a constant rate; removing water generated by adding the alcohol starting material from the reactor, and purifying the obtained styrenic olefin. The method of the present invention is advantageous in minimizing byproducts and preparing styrenic olefins having a variety of substituents in high yield.

Abstract: Disclosed herein is a small particle oxide powder for dielectrics. The oxide powder has a perovskite structure, an average particle diameter [D50(?m)] of 0.3 ?m or less, a particle size distribution of the average particle diameter within 3%, a particle size distribution satisfying a condition D99/D50<2.5, a content of OH? groups of 0.2 wt % and a C/A axial ratio of 1.006 or more. A method of manufacturing the oxide powder comprises the steps of mixing TiO2 particles and a compound solved with at least one element represented by A of the perovskite structure of ABO3; drying and pulverizing the mixture of TiO2 and the compound; calcining the pulverized mixture; adding the oxide containing the elements of the site A to the coated TiO2 particles and wet-mixing, drying and pulverizing; primarily calcining and pulverizing the pulverized powder under vacuum; and secondarily calcining and pulverizing the powder.

Abstract: In a photoresist composition for a semiconductor manufacturing process and a method of forming a photoresist pattern using the photoresist composition, the photoresist composition includes an organic dispersing agent for dispersing acid (H+). The photoresist film may have enough spaces among photosensitive polymers so that acid may be dispersed sufficiently in an exposure process. Thus, a photoresist pattern may be easily formed in a defocus region. Defects in a semiconductor device may be reduced and a productivity of the semiconductor manufacturing process may be enhanced.

Abstract: An adhesive compound for use during the formation of a photoresist film represented by the following chemical formula, wherein R represents a photoacid generator is disclosed.

Abstract: An adhesive compound for use during the formation of a photoresist film represented by the following chemical formula, wherein R represents a photoacid generator is disclosed.

Abstract: Provided are a circuit and a method for transforming a data input/output format of a semiconductor memory device which is capable of generating various types of data patterns when the number of memory cells connected to one column selection line is greater than the number of data input pins. The circuit for transforming a data input/output format of a semiconductor memory device includes a first transmission circuit, a second transmission circuit, and a mode register set (MRS). The first transmission circuit is activated when a first test mode signal is enabled, receives n data inputs from n data input ends, and transmits the n data inputs to m memory cells. Here, n and m are natural numbers and m is greater than n. The second transmission circuit is activated when a second test mode signal is enabled, receives n data inputs from the n data input ends, and transmits the n data inputs to the m memory cells.

Abstract: The present invention relates to a catalyst for preparing vinyl aromatic polymer and styrene polymerization using the same, and particularly to a transition metal half metallocene catalyst with a novel structure for preparing syndiotactic styrene polymer having high activity, superior stereoregularity, high melting point and various molecular weight distributions and a process for preparing styrene polymer using the same. The present invention provides a multinuclear half metallocene compound in which two or more of transition metals of groups 3 to 10 on periodic table are connected through bridge ligand simultaneously containing ?-ligand cycloalkandienyl group and ?-ligand functional group and its preparation, and a process for preparing styrene polymer using the compound as a catalyst. Polymers with various molecular weight distributions as well as vinyl aromatic polymer having predominant syndiotactic structure can be prepared with high activity using the multinuclear half metallocene catalyst.

Abstract: A composition for an anti-reflective layer capable of simultaneously being developed together with a photoresist layer after exposure of the photoresist layer in a photolithography process and a method for forming patterns in a semiconductor device using the composition, wherein the anti-reflective light absorbing layer composition includes a polymer having a (meth)acrylate repeating unit, a light-absorbing group of diazoquinones chemically bound to the (meth)acrylate repeating unit, a photoacid generator, a cross-linker which thermally cross-links the polymer and is decomposed from the polymer by an acid, and a catalyst for the cross-linking reaction of the polymer. The method for forming patterns in a semiconductor device involves forming an anti-reflective layer on a semiconductor substrate using the composition and simultaneously exposing the anti-reflective layer and a photoresist layer, thereby chemically transforming the anti-reflective layer so it is able to be developed.

Abstract: Provided are a circuit and a method for transforming a data input/output format of a semiconductor memory device which is capable of generating various types of data patterns when the number of memory cells connected to one column selection line is greater than the number of data input pins. The circuit for transforming a data input/output format of a semiconductor memory device includes a first transmission circuit, a second transmission circuit, and a mode register set (MRS). The first transmission circuit is activated when a first test mode signal is enabled, receives n data inputs from n data input ends, and transmits the n data inputs to m memory cells. Here, n and m are natural numbers and m is greater than n. The second transmission circuit is activated when a second test mode signal is enabled, receives n data inputs from the n data input ends, and transmits the n data inputs to the m memory cells.

Abstract: The present invention relates to a catalyst for preparing vinyl aromatic polymer and styrene polymerization using the same, and particularly to a transition metal half metallocene catalyst with a novel structure for preparing syndiotactic styrene polymer having high activity, superior stereoregularity, high melting point and various molecular weight distributions and a process for preparing styrene polymer using the same.

Abstract: Disclosed are a driving apparatus of a PDP to decrease the size of the PDP as well as to enhance electrical characteristics by mounting a plurality of control chips and memories on a single package, and a fabrication method thereof. The driving apparatus includes a multi-chip module in which at least one control chip having a control circuit for controlling the PDP, and at least one memory are mounted on a single package, wherein the multi-chip module is mounted on a printed circuit board (PCB) of a control board.

Abstract: Disclosed is a semiconductor package and method for package a semiconductor that has high reliability. A semiconductor package according to the present invention comprises a first substrate on which a circuit pattern and an electrode pad are formed; a second substrate which is adhered to the first substrate and on which a hole is formed; and a solder ball adhered to the electrode pad through the hole formed on the second substrate. Then, the second substrate is used as a solder resist.

Abstract: A composition for an anti-reflective layer capable of simultaneously being developed together with a photoresist layer after exposure of the photoresist layer in a photolithography process and a method for forming patterns in a semiconductor device using the composition, wherein the anti-reflective light absorbing layer composition includes a polymer having a (meth)acrylate repeating unit, a light-absorbing group of diazoquinones chemically bound to the (meth)acrylate repeating unit, a photoacid generator, a cross-linker which thermally cross-links the polymer and is decomposed from the polymer by an acid, and a catalyst for the cross-linking reaction of the polymer. The method for forming patterns in a semiconductor device involves forming an anti-reflective layer on a semiconductor substrate using the composition and simultaneously exposing the anti-reflective layer and a photoresist layer, thereby chemically transforming the anti-reflective layer so it is able to be developed.

Abstract: The present invention relates to a complex comprising one or more radioisotopes selected from the group consisting of 99mTc, 188Re and 186Re chelated to a glucose derivative having an intramolecular nitrogen or sulfur atom, which is very useful as tumor diagnostic agents. It also relates to a kit for the preparation thereof comprising the glucose derivative and a reducing agent.

Abstract: An absorption provided with a refrigerant management method and apparatus for temporarily storing liquid refrigerant during cooling mode operation and releasing refrigerant to the evaporator sump as needed to prevent refrigerant pump cavitation during periods of part load operation and causing dilution of solution in the absorber when the system is shut down. The refrigerant is stored in a tank located in the evaporator, with the tank fluidly communicating with the evaporator sump both by way of a side opening in the tank and by way of overflowing the tank. Refrigerant replenishment to the tank occurs during normal operation either by refrigerant flow from the condenser or by way of a bleed line from the refrigerant pump.

Abstract: A dilution control apparatus for use in an absorption cooling system of the type which uses a refrigerant and an absorbent, and which includes a generator, a condenser having a condenser sump, an absorber having an absorber sump, and an evaporator having an evaporator sump. At least one refrigerant reservoir is arranged to receive refrigerant condensing within the condenser, and to store a quantity of refrigerant which, if released into the system during the dilution phase of the system shutdown process, is sufficient to lower the concentration of the refrigerant-absorbent solution to a concentration low enough to prevent crystals from forming in the absorber after the shutdown process has been completed. Refrigerant is released from the at least one refrigerant reservoir to the evaporator sump at a variable rate, through a first refrigerant releasing path, when the system operates under a cooling load that fluctuates with time.