Abstract: An input/output circuit may include an input circuit, an amplifier circuit and a precharging circuit. The input circuit may load differential input data to setup nodes based on a data strobe clock. The amplifier circuit may compare and amplify the data that is loaded to the setup nodes and configured to output the amplified data. The precharging circuit may precharge the setup nodes based on the data strobe clock and the differential input data.

Abstract: A method of providing a parking service comprises calculating overlap degree of a target vehicle and specific parking area by analyzing a parking monitoring image obtained from a sensor for monitoring specific parking area at a first time of point and determining through the calculated overlap degree whether the target vehicle is parked; recording the target vehicle in an exit queue when the target vehicle goes out of the specific parking area by analyzing a parking monitoring image obtained from the sensor at a second time of point; performing an exit process when the target vehicle included in the exit queue moves to go out of the specific parking area by analyzing a parking monitoring image obtained from the sensor at a third time of point. A payment process in accordance with an exit of the target vehicle is performed based on payment information preregistered when the target vehicle is parked.

Abstract: A computing device comprises a communication unit which is a communication path with a first sensor for monitoring a first handover area and a second sensor for monitoring a second handover area, and a handover unit configured to obtain a first image from the first sensor, obtain a second image from the second sensor, detect an exit of a moving object from the first handover area through the obtained first image, detect an entrance of a moving object to the second handover area through the obtained second image and discriminate whether or not the moving object entered the second handover area is the same moving object as the moving object exited from the first handover area by using the detected entrance of the moving object and the detected exit of the moving object. Here, the second handover area is matched with the first handover area.

Abstract: The present invention relates to a culture broth for culturing Gram-positive bacteria that can simultaneously culturing not only general Gram-positive bacteria but also Streptococcus pneumoniae. The present invention provides a culture broth for culturing Gram-positive bacteria, comprising a meat extract, casein hydrolysate, an antioxidant enzyme, a surfactant, starch, and a solidifying agent.

Abstract: An apparatus for generating an activated sterilization solution is disclosed. The apparatus may include a plasma treatment unit for performing plasma discharge treatment on a gas, and a sterilization solution treatment unit for changing a sterilization solution into a droplet or mist state. The gas treated by the plasma discharge treatment may be mixed with the sterilization solution in the droplet or mist state.

Abstract: A quick connector is provided. The quick connector is configured to be coupled to a locking ring provided around an outer peripheral surface of a tube, through which fluid flows in or out. The quick connector includes a main body, which accommodates the tube therein and includes locking members, formed to be locked by the locking ring and being bent toward the locking ring, and a mounting guide coupled to the outer peripheral surface of the main body and accommodating the locking members therein. The mounting guide is configured to slide along the longitudinal axis of the main body so as to enable the locking members to be locked around the locking ring or to be released from the locked state.

Abstract: The present invention relates to a compact video generation device and method, and a recording medium in which a computer program is recorded. A compact video generation device according to the present invention may comprise: an object extraction unit for separating a photographed image into a background image and a foreground image and extracting objects included in the separated foreground image; an object collision calculation unit for separately generating an occupation matrix having a changed scale thereof from the foreground image, and calculating collision by using a calculation between occupation matrices of different objects, when a collision occurs between the extracted objects; an object rearrangement unit for rearranging the objects within a range in which no collision visually occurs; and a summary image generation unit for generating a summary image by combining the photographed background image and the rearranged objects.

Abstract: The present invention relates to a compact video generation device and method, and a recording medium in which a computer program is recorded. A compact video generation device according to the present invention may comprise: an object extraction unit for separating a photographed image into a background image and a foreground image and extracting objects included in the separated foreground image; an object collision calculation unit for separately generating an occupation matrix having a changed scale thereof from the foreground image, and calculating collision by using a calculation between occupation matrices of different objects, when a collision occurs between the extracted objects; an object rearrangement unit for rearranging the objects within a range in which no collision visually occurs; and a summary image generation unit for generating a summary image by combining the photographed background image and the rearranged objects.

Abstract: An apparatus for generating an activated sterilization solution is disclosed. The apparatus may include a plasma treatment unit for performing plasma discharge treatment on a gas, and a sterilization solution treatment unit for changing a sterilization solution into a droplet or mist state. The gas treated by the plasma discharge treatment may be mixed with the sterilization solution in the droplet or mist state.

Abstract: A quick connector is provided. The quick connector is configured to be coupled to a locking ring provided around an outer peripheral surface of a tube, through which fluid flows in or out. The quick connector includes a main body, which accommodates the tube therein and includes locking members, formed to be locked by the locking ring and being bent toward the locking ring, and a mounting guide coupled to the outer peripheral surface of the main body and accommodating the locking members therein. The mounting guide is configured to slide along the longitudinal axis of the main body so as to enable the locking members to be locked around the locking ring or to be released from the locked state.

Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

Abstract: A semiconductor package includes a substrate in which a plurality of wires are formed; at least one semiconductor chip electrically connected to portions of the plurality of wires; and a shielding can mounted on the substrate, surrounding the at least one semiconductor chip, electrically connected to at least one wire of the plurality of wires and including a soft magnetic material. The semiconductor package can prevent or substantially reduce electromagnetic interference (EMI).

Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

Abstract: An ammonia gas detection apparatus includes an ammonia sensor that is configured to detect an ammonia gas in a gas stream and to generate a first output signal when the ammonia gas is detected in the gas stream. The ammonia sensor does not detect the ammonia gas in the gas stream when the gas stream further includes an interference gas that disrupts operation of the ammonia sensor. A discoloration gauge includes a reaction solution that changes from a first color to a second color responsive to exposure to the ammonia gas in the gas stream, regardless of the presence of the interference gas, and a detector that generates a second output signal responsive to the reaction solution changing from the first color to the second color. A communication interface outputs the first and second output signal to a host computer that detects presence of the ammonia gas.

Abstract: An example embodiment relates to a patterning process including forming a photoresist pattern on a structure. The photoresist pattern includes a cross-linked surface that is insoluble in an organic solvent. The process also includes spin-on coating a dielectric layer on the photoresist pattern, partially removing the dielectric layer to form a plurality of dielectric spacers surrounding the photoresist pattern, and removing the photoresist pattern.

Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.

Abstract: A method of forming a reticle includes: loading a blank reticle; projecting an electron beam; moving a second aperture plate having a first pattern aperture and a second pattern aperture so that the first pattern aperture is directly overlapped by a first aperture of a first aperture plate, the electron beam passing through the first pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after the electron beam passes the first pattern aperture, to form a first exposure pattern; moving the second aperture plate so that the second pattern aperture is directly overlapped by the first aperture of the first aperture plate, the electron beam passing through the second pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after the electron beam passes the second pattern aperture, to form a second exposure pattern; and developing the blank reticle having the first and second exposure patterns to form the reticle having firs

Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.