Abstract: A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.

Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.

Abstract: A method of manufacturing a semiconductor device includes forming a stacked structure, forming an opening in the stacked structure, forming a preliminary channel layer in the opening, forming a channel layer by performing heat treatment on the preliminary channel layer, etching an inner surface of the channel layer, and performing ozone (O3) treatment on an etched inner surface of the channel layer.

Abstract: A semiconductor device includes a stacked structure including conductive layers and insulating layers alternately stacked with each other, and a channel layer passing through the stacked structure, wherein the channel layer is a single layer, the single layer including a first GIDL region, a cell region, and a second GIDL region, and the first GIDL region has a greater thickness than each of the cell region and the second GIDL region.

Abstract: A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

Abstract: Provided herein is a semiconductor device and a method of manufacturing the same. The semiconductor device has improved erase characteristics by using a select gate enclosing a portion a first semiconductor region overlapping a second semiconductor region. The first semiconductor region and the second semiconductor region are formed of different semiconductor materials.

Abstract: The present invention relates to a newly isolated bacterium belonging to the genus Microbacterium, a composition for producing psicose comprising the strain, and a method for producing psicose using the same.

Abstract: An air intake control apparatus for a vehicle may include an intake passage configured such that a flow pipe for a flow of intake air is divided into first and second division passages and the first and second division passages communicate with the same combustion chamber, a variable valve provided in the first division passage to adjust an opening degree of the first division passage according to an rotation angle of a motor connected to a central shaft of the variable valve, and an operation valve provided in the second division passage to open or close the second division passage by ON/OFF control.

Abstract: Provided herein is a semiconductor device and a method of manufacturing the same. The semiconductor device has improved erase characteristics by using a select gate enclosing a portion a first semiconductor region overlapping a second semiconductor region. The first semiconductor region and the second semiconductor region are formed of different semiconductor materials.

Abstract: Provided herein is a method of manufacturing a semiconductor device. The method may include forming an amorphous channel layer. The method may include forming a diffusion barrier on the amorphous channel layer. The method may include forming an amorphous seed layer on the diffusion barrier. The method may include forming a seed layer by crystallizing the amorphous seed layer. The method may include forming a channel layer by crystallizing the amorphous channel layer.

Abstract: Provided herein is a semiconductor device and a method of manufacturing the same. The semiconductor device has improved erase characteristics by using a select gate enclosing a portion a first semiconductor region overlapping a second semiconductor region. The first semiconductor region and the second semiconductor region are formed of different semiconductor materials.

Abstract: Provided herein is a method of manufacturing a semiconductor device. The method may include forming an amorphous channel layer. The method may include forming a diffusion barrier on the amorphous channel layer. The method may include forming an amorphous seed layer on the diffusion barrier. The method may include forming a seed layer by crystallizing the amorphous seed layer. The method may include forming a channel layer by crystallizing the amorphous channel layer.

Abstract: A semiconductor integrated circuit device may include a structure, a first capping layer, a channel layer and a second capping layer. The structure may have an opening formed in the structure. The first capping layer may be formed in the opening of the structure. The channel layer may be arranged between the structure and the first capping layer. The second capping layer may be arranged on the channel layer and the first capping layer.

Abstract: Provided herein is a semiconductor device and a method of manufacturing the same. The semiconductor device has improved erase characteristics by using a select gate enclosing a portion a first semiconductor region overlapping a second semiconductor region. The first semiconductor region and the second semiconductor region are formed of different semiconductor materials.

Abstract: An air intake control apparatus for a vehicle may include an intake passage configured such that a flow pipe for a flow of intake air is divided into first and second division passages and the first and second division passages communicate with the same combustion chamber, a variable valve provided in the first division passage to adjust an opening degree of the first division passage according to an rotation angle of a motor connected to a central shaft of the variable valve, and an operation valve provided in the second division passage to open or close the second division passage by ON/OFF control.

Abstract: A method of improving fuel efficiency by analyzing a driving pattern of a vehicle may include: calculating weighting factors according to a driving pattern of the vehicle at coordinates, which are the ratios of weightings accumulated at the coordinates to the sum of the weightings accumulated at all coordinates in an engine operation region; calculating a reference fuel consumption ratio KFUEL and a reference NOx exhaust ratio KNOx using the weighting factors; determining whether the reference NOx exhaust ratio KNOx exceeds a predetermined comparative value; and controlling an engine to improve fuel efficiency when the reference NOx exhaust ratio KNOx is equal to or less than the predetermined comparative value.

Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.

Abstract: A method of operating a mobile device and mobile systems are provided. The method includes detecting a first event through an interface of the mobile device, displaying scene data that is generated by a camera of the mobile device on a display of the mobile device, in response to the detecting first event, detecting a second event through the interface, and measuring an external color temperature in response to the detecting the second event. The method further includes generating flash data having a color temperature for compensating the external color temperature, displaying the flash data on the display, and capturing a scene using the camera.

Abstract: A semiconductor light emitting device may include a semiconductor light emitting diode (LED) chip, a light-transmitting film on the LED chip, and a light-transmitting bonding layer between the light-transmitting film and the semiconductor LED chip. At least one of the light-transmitting film and the light-transmitting bonding layer may include a wavelength conversion material configured to convert light emitted by the semiconductor LED chip into light having a wavelength different from a wavelength of the emitted light. The light-transmitting bonding layer may have a lateral inclined region extending to the lateral surface to form an inclined surface. The semiconductor light emitting device may further include a reflective packaging portion surrounding the light-transmitting bonding layer, covering the first surface such that an electrode of the LED chip is at least partially exposed. The reflective packaging portion may include a reflective material.