Abstract: A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer, a mercaptopropionic acid compound and a solvent. The coating layer is exposed to a light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.

Abstract: A method for forming a fine exposure pattern where a width and an interval of the pattern are each 1CD, by first exposing a photoresist by using an exposure mask where an interval ratio of a light shielding part and a light transmission part is 2CD:1CD to 4CD:1CD, and then second exposing the photoresist after the exposure mask is shifted at a predetermined interval, or second exposing the photoresist by using an exposure mask formed at a position where a light transmission part is shifted at a predetermined interval, and developing the photoresist, such that it is possible to form a display device having a pixel electrode including a plurality of fine branch electrodes having a smaller width and interval than a resolution of an exposure apparatus.

Abstract: Provided are a photomask, including: a substrate; an opaque pattern formed on the substrate and made of a material which does not penetrate light; a first dielectric layer formed on the substrate and the opaque pattern; and a negative refractive-index meta material layer formed on the first dielectric layer, in which a dispersion mode used in the photomask uses a Quasi bound mode, a manufacturing method of the photomask, and a manufacturing method of a substrate using the photomask.

Abstract: An optical mask for forming a pattern is provided. The optical mask includes: a substrate including a light blocking pattern formed on portions of the substrate, wherein the light blocking pattern includes a halftone layer and a light blocking layer formed on the halftone layer, and the halftone layer and the light blocking layer overlap such that at least an edge portion of the halftone layer is exposed. A pitch of the light blocking pattern may about 6 ?m, and a transmission ratio of the halftone layer may range from about 10% to about 50%.

Abstract: A photosensitive resin composition is disclosed. The disclosed photosensitive resin composition includes an acryl-based copolymer formed by copolymerizing i) unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, or a mixture thereof, and ii) an olefin-based unsaturated compound or a mixture thereof, a dissolution inhibitor in which a phenolic hydroxyl group is protected by an acid-degradable acetal or ketal group, a photoacid generator, and a solvent.

Abstract: The present invention relates to a display device and a method of manufacturing the display device. The display device includes an insulation substrate, a gate conductor including a gate line and a gate electrode, an organic layer on the insulation substrate and the gate line, and a data conductor including a data line, a drain electrode, and a source electrode. The data line crosses the gate line. The gate electrode, the drain electrode, and the source electrode form a transistor, and a thickness of the gate electrode may be larger than a thickness of the gate line.

Abstract: A photosensitive resin composition includes: an acrylic copolymer comprising a polymerization product of a first monomer comprising at least one selected from an unsaturated carboxylic acid and an unsaturated carboxylic acid anhydride, and a second monomer comprising an olefin-based unsaturated compound; a photosensitive component comprising at least one 1,2-quinonediazide-5-sulfonic acid ester compound selected from compounds represented by Chemical Formulae 1 to 4; a coupling agent; and a solvent, wherein a total amount of asymmetric compounds in the photosensitive component is greater than or equal to 45 area percent as determined by high performance liquid chromatography: wherein R1 is a hydroxyl group or a methyl group, and NQD is a 1,2-quinonediazide 5-sulfonyl group.

Abstract: An organic layer composition and a liquid crystal display including the same are provided. An organic layer composition according to an exemplary embodiment includes a binder formed by copolymerizing compounds included in a first group and a second group, wherein the first group includes an acryl-based compound and the second group includes a compound without a —COO— group.

Abstract: A display panel includes: a substrate including red, green, blue and white sub-pixel areas; red, green and blue color filter layers respectively in the red, green and blue sub-pixel areas; and a dummy color filter layer in the white sub-pixel area. The dummy color filter layer is adjacent to at least one of the red color filter layer, the green color filter layer, and the blue color filter layer, and the dummy color filter layer forms a step with the adjacent color filter layer.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulation substrate; a thin film transistor disposed on the insulation substrate, wherein the thin film transistor includes a first electrode; a first contact hole pattern having a first width, wherein the first contact hole pattern exposes a portion of the first electrode, and a first contact hole to expose the portion of the first electrode, wherein an inner sidewall of the first contact hole pattern constitutes a first portion of the first contact hole.

Abstract: A display device according to an exemplary embodiment of the present invention includes a substrate including a plurality of pixel regions, a thin film transistor disposed on the substrate, and a pixel electrode connected to the thin film transistor and disposed in a first pixel region. A roof layer is disposed on the pixel electrode and spaced apart from the pixel electrode with a microcavity interposed therebetween. The plurality of pixel regions is disposed in a matrix form including a plurality of pixel rows and a plurality of pixel columns, the roof layer is disposed along the plurality of pixel rows, and the roof layer includes a bridge portion connecting the roof layers disposed in different pixel rows.

Abstract: An optical mask for forming a pattern is provided. The optical mask includes: a substrate including a light blocking pattern formed on portions of the substrate, wherein the light blocking pattern includes a halftone layer and a light blocking layer formed on the halftone layer, and the halftone layer and the light blocking layer overlap such that at least an edge portion of the halftone layer is exposed. A pitch of the light blocking pattern may about 6 ?m, and a transmission ratio of the halftone layer may range from about 10% to about 50%.

Abstract: An exposure mask includes a first transmission portion, a second transmission portion, and a blocking portion. The first transmission portion is configured to, when illuminated with light, transmit the light at a first energy level. The first transmission portion is disposed in association with formation of a first contact hole in an underlying layer. The second transmission portion is configured to, when illuminated with the light, transmit the light at a second energy level. The second transmission portion is disposed in association with formation of a second contact hole in the underlying layer. The blocking portion is configured to block the light, and is disposed in association with a boundary region between a first region and a second region of the underlying layer. The second transmission portion is further configured to enable the second contact hole to be formed deeper into the underlying layer than the first contact hole.

Abstract: A photomask for exposure includes: a transparent substrate; a light blocking pattern layer positioned on the transparent substrate; a first dielectric layer positioned on the light blocking pattern layer and including a dielectric material; and a negative refractive index layer positioned on the first dielectric layer and including a metal. A surface plasmon quasi-bound mode of the photomask for exposure overlaps a wavelength range of the light source of the light exposer which irradiates light to the photomask for exposure.

Abstract: An optical mask for forming a pattern is provided. The optical mask includes: a substrate including a light blocking pattern formed on portions of the substrate, wherein the light blocking pattern includes a halftone layer and a light blocking layer formed on the halftone layer, and the halftone layer and the light blocking layer overlap such that at least an edge portion of the halftone layer is exposed. A pitch of the light blocking pattern may about 6 ?m, and a transmission ratio of the halftone layer may range from about 10% to about 50%.

Abstract: A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer, a mercaptopropionic acid compound and a solvent. The coating layer is exposed to a light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.

Abstract: A pattern mask for patterning a thin film includes a transparent or translucent substrate with a plurality of grooves formed thereon having a pitch of about 4.6 ?m to about 10.8 ?m.

Abstract: A display panel includes a substrate, a thin film transistor on the substrate, a first electrode electrically connected to the thin film transistor, a first insulation layer covering the first electrode, an image displaying layer disposed on the first insulation layer, a second insulation layer disposed on the image displaying layer, a second electrode disposed on the second insulation layer and insulated from the first electrode, and a protecting layer disposed on the second electrode. The protecting layer surrounds a portion of an upper surface and a side surface of the image displaying layer. The protecting layer includes a light curable material.

Abstract: A mask may include a circuit area and a pixel area. The circuit area includes a circuit pattern. The pixel area includes a pixel pattern which is extended in a length direction and an assist pattern which is at an end portion of the pixel pattern and adjacent to the circuit area.

Abstract: A photomask includes a substrate, a mask pattern layer and a super lens. The substrate includes a pattern which includes protruding portions, and open portions between the protruding portions. The mask pattern layer is in the open portions of the pattern and fills the open portions of the pattern. The super lens is on the substrate and the mask pattern layer.