Abstract: A substrate includes a first insulation layer, a passive component, a first through-hole structure, a second insulation layer and a second electrode. The first insulation layer has a top surface and a bottom surface. The passive component is embedded in the first insulation layer. The passive component includes a first conducting terminal. The first through-hole structure is formed in the first insulation layer. The first through-hole structure includes a conductive part and an insulation part disposed within the conductive part. The conductive part is in contact with the first conducting terminal and formed as a first electrode. The second insulation layer is disposed on portion of the conductive part that is close to the bottom surface of the first insulation layer. At least part of the second electrode is disposed on the second insulation layer. The second electrode is in contact with the first insulation layer.

Abstract: A well cementing method is described for improving cementing quality by controlling the hydration heat of cement slurry. By controlling the degree and/or rate of hydration heat release from cement slurry, the method improves the hydration heat release during formation of cement with curing of cement slurry, improves the binding quality between the cement and the interfaces, and in turn improves the cementing quality at the open hole section and/or the overlap section. The cementing method improves cementing quality of oil and gas wells and reduces the risk of annular pressure.

Abstract: An apparatus for downhole multi-dimensional imaging includes an acquisition unit configured to acquire a formation resistivity signal, an ultrasonic echo signal and an orientation signal regularly; a sector calculation unit configured to calculate, based on said orientation signal, a sector where a currently acquired signal is from; and a multi-dimensional imaging unit, configured to calculate, based on the signals acquired by the acquisition unit, data of resistivity, distance from a drilling tool to a borehole wall and ultrasonic echo amplitude, and distribute said data into all sectors for feature recognition and extraction, thus obtaining key features characterizing a current formation being drilled, said key features being transmitted to ground for guiding drilling process. The structural complexity and the length of the downhole imaging measurement instrument can be reduced, and feature recognition can be directly performed on the imaging data underground.

Abstract: Disclosed is a coordinated peak shaving optimization method for a plurality of power supplies based on a fluctuation characteristic of a renewable energy source, including the following steps: s1: determining a weekly generated electricity quantity of hydropower based on an available capacity and a storage capacity of an electricity quantity; s2: predicting a renewable energy power generation curve and a load curve of a system weekly; s3: determining a start point of peak shaving of the hydropower based on an external transmission curve, the renewable energy generation curve, and the load curve of the system and a generating capacity of the hydropower; s4: determining a weekly peak shaving demand of the system; and s5: establishing an optimization model with a maximum peak shaving demand. The present disclosure proposes a reasonable arrangement for peak shaving, so as to resolve an accommodation problem caused by large-scale access of a renewable energy source.

Abstract: An intelligent decision-making method for maintaining urban underground sewer network includes steps of: analyzing with a sewer network functional defect three-dimensional instantaneous hydraulic model; calibrating parameters by finite element fitting analysis and full-scale test, and verifying accuracy of the sewer network functional defect three-dimensional instantaneous hydraulic model; combining node water level iteration method, Preissmann slit method, Godunov finite volume method and unstructured grid to rebuild a surface-subsurface one-two-dimensional coupled connection model; using R language, dynamic library linking technology, and long-short-term memory neural network method of multi-source data samples for engineering secondary development of the surface-subsurface one-two-dimensional coupled connection model, and obtaining urban sewer network functional defect conditions with waterlogging result labels; and establishing a multi-objective planning intelligent decision-making model for sewer network

Abstract: A split gate carrier stored trench bipolar transistor (CSTBT) with current clamping PMOS include a P-type buried layer and a split gate electrode with equal potential to an emitter metal on the basis of the traditional CSTBT, which effectively eliminates the influence of an N-type carrier stored layer on breakdown characteristics of the device through the charge compensation effect, and helps to improve the trade-off relationship between the on-state voltage drop and the turn-off loss. Moreover, the introduction of a parasitic PMOS structure can reduce the saturation current and improve short-circuit safe operating area of the device, reduce the Miller capacitance, and improve the switching speed of the device and reduce the switching loss of the device. In addition, the split gate CSTBT integrating the split gate electrode and gate electrode in the same trench can shorten the distance between PMOS and NMOS channels.

Abstract: A three-dimensional carrier stored trench IGBT and a manufacturing method thereof are provided. A P-type buried layer and a split gate electrode with equal potential to an emitter metal is introduced on the basis of the traditional carrier stored trench IGBT, which can effectively eliminate the influence of an N-type carrier stored layer on breakdown characteristics of the device through the charge compensation, and at the same time can reduce the on-state voltage drop and improve the trade-off relationship between the on-state voltage drop Vceon and the turn-off loss Eoff. The split gate electrodes is introduced in the Z-axis direction, so that the gate electrodes are distributed at intervals. Therefore, the channel density is reduced. The turning on of the parasitic PMOS has a potential-clamping effect on the NMOS channel, so that the saturation current can be reduced and a wider short-circuit safe operating area (SCSOA) can be obtained.

Abstract: A peak shaving control method for emergent source-grid coordination in case of a faulty sending-end power grid. The method includes: S1: evaluating dispatchability of a cluster virtual wind power unit; S2: developing a method for calculating a dispatchability index of the cluster virtual wind power unit; S3: analyzing a source-load peak-shaving resource strategy; and S4: distributing a control strategy for tie-line peak shaving. The present disclosure has the following beneficial effects: In the present disclosure, real-time dispatchability of wind power participating in real-time power balance is first analyzed, specific evaluation indexes and calculation methods are provided, and calculation examples are given for verification. Then, an optimized real-time dispatch strategy is provided based on demand-side response resources, and DC and AC tie-lines are coordinated for operation.

Abstract: The disclosure relates to an RI switching apparatus and method thereof in a wireless communication network. The apparatus comprises a plurality of RI ports each connecting to a node of either a Radio Equipment Control (REC) or a Radio Equipment (RE). At least one REC and at least on RE are connected to the apparatus. The apparatus comprises a storage storing thereon a mapping relationship between one or more minimal processing and transmission units of at least one REC and one or more minimal processing and transmission units of at least one RE. When the apparatus receives data, a switcher in the apparatus switches the received data based on the mapping relationship. By appropriately configuring the mapping relationship, data transferred from an RE/REC may be switched to another REC/RE flexibly and the processing capabilities of RECs and REs can be fully used.

Abstract: The present invention provides a handheld power tool and an operation method thereof. The handheld power tool comprises a housing, a handle, a switch, a motor, an output shaft and a working component; the working component comprises at least two working chucks; the at least two working chucks respectively comprise a working shaft, the handheld power tool further comprises a control mechanism locking the working component relative to the position of the housing, the control mechanism comprises a control part adjacent to the switch and movably disposed relative to the housing, and the control part operably removes the position locking of the working component and controls the output shaft to be dis-matched and disconnected with one of the working shafts; and the position conversion of the working chucks can be finished by means of other body parts of an operator through one hand, and the operation is convenient and reliable.

Abstract: A vacuum cleaner combination includes a dust suction apparatus and a dust bin configured to be coupled to the cup body and collect dust sucked by the dust suction apparatus. The vacuum cleaner combination is operable in and a second working mode. In the first working mode, the dust suction apparatus is not coupled to the dust bin, and the dust suction apparatus independently works and is responsible for dust suction and dust collection. In the second working mode, the dust suction apparatus is coupled to the dust bin, and the dust suction apparatus and the dust bin are both responsible for dust collection.

Abstract: A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby, the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

Abstract: A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby. the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

Abstract: A junction termination with an internal field plate, the field plate structure and the junction termination extension region are folded inside the device to make full use of the thickness of the drift region in the body, thereby reducing the area of the termination and relieving the electric field concentration at the end of the PN junction. The breakdown position is transferred from the surface into the body of the original PN junction, and the withstand voltage of termination can reach to the breakdown voltage of the parallel plane junction. Under such design, a smaller area can be obtained than that of the conventional structure at the same withstand voltage.

Abstract: A junction termination with an internal field plate, the field plate structure and the junction termination extension region are folded inside the device to make full use of the thickness of the drift region in the body, thereby reducing the area of the termination and relieving the electric field concentration at the end of the PN junction. The breakdown position is transferred from the surface into the body of the original PN junction, and the withstand voltage of termination can reach to the breakdown voltage of the parallel plane junction. Under such design, a smaller area can be obtained than that of the conventional structure at the same withstand voltage.

Abstract: The present invention provides a handheld power tool and an operation method thereof. The handheld power tool comprises a housing, a handle, a switch, a motor, an output shaft and a working component; the working component comprises at least two working chucks; the at least two working chucks respectively comprise a working shaft, the handheld power tool further comprises a control mechanism locking the working component relative to the position of the housing, the control mechanism comprises a control part adjacent to the switch and movably disposed relative to the housing, and the control part operably removes the position locking of the working component and controls the output shaft to be dis-matched and disconnected with one of the working shafts; and the position conversion of the working chucks can be finished by means of other body parts of an operator through one hand, and the operation is convenient and reliable.

Abstract: The disclosure relates to an RI switching apparatus and method thereof in a wireless communication network. The apparatus comprises a plurality of RI ports each connecting to a node of either a Radio Equipment Control (REC) or a Radio Equipment (RE). At least one REC and at least on RE are connected to the apparatus. The apparatus comprises a storage storing thereon a mapping relationship between one or more minimal processing and transmission units of at least one REC and one or more minimal processing and transmission units of at least one RE. When the apparatus receives data, a switcher in the apparatus switches the received data based on the mapping relationship. By appropriately configuring the mapping relationship, data transferred from an RE/REC may be switched to another REC/RE flexibly and the processing capabilities of RECs and REs can be fully used.

Abstract: A method for manufacturing a vertical super junction drift layer of a power semiconductor device. The method includes: a): adopting a P+ single crystal silicon to prepare a P+ substrate; b): finishing top processes of the devices on the P+ substrate, forming at least a P type region, manufacturing active area and metallizing the top surface of the P+ substrate; c): thinning the back surface of the P+ single crystal silicon; d): selectively implanting H+ ions at the back surface repeatedly and then annealing to form N pillars in the P type region; and e): metallizing the back surface.

Abstract: The present invention discloses a testing method for dynamic model parameters of a wind power plant, wherein under testing conditions including stable running of wind turbine generators and reactive-load compensation equipment, stable wind speed between a cut-in wind speed and a rated wind speed, and the wind power plant output smaller than a rated output, finishes a wind speed transient disturbance test, a wind power plant unit tripping and inputting disturbance test, a wind power plant power change test, a disturbance test for reactive-load compensation equipment of the wind power plant, a tripping disturbance test for hydroelectric power plant and thermal power plant near the wind power plant and a manual single-phase ground short circuit test at the outgoing line part of the wind power plant, and records running curves of the wind power plant under each condition to finish the parameter test.