Abstract: The present invention relates to a light emitting transition metal compound of Chemical Formula 1 and an organic electroluminescence device including the compound. In the Chemical Formula 1, M is selected from Ir, Pt, Rh, Re, and Os, m is 2 or 3, n is 0 or 1, the sum of m and n is 3, provided that the sum of m and n is 2 M is Pt. X is a N or P atom, and Y is S, O, or Se.

Abstract: The present invention relates to a light emitting metallic compound of Chemical Formula 1 and an organic electroluminescence device including the compound. In the Chemical Formula 1, M is selected from Ir, Pt, Rh, Re, and Os, and m is 2, provided that m is 1 when M is Pt.

Abstract: A semiconductor light emitting device includes a first semiconductor layer having a bottom surface with uneven patterns, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer, a second electrode formed on the second semiconductor layer, and a first electrode formed under the first semiconductor layer.

Abstract: The present invention relates to a light emitting metallic compound of Chemical Formula 1 and an organic electroluminescence device including the compound. In the Chemical Formula 1, M is selected from Ir, Pt, Rh, Re, and Os, m is 2 or 3, n is 0 or 1, the sum of m and n is 3, provided that the sum of m and n is 2 when M is Pt. X is an N or P atom, Y is S, O, or Se, and Z is SiR5R6, CR5R6, PR5, S, SO2, carbonyl, or NR5, and L2 is represented by Chemical Formulae 2, 3, or 4.

Abstract: Provided is a method of fabricating and repairing ceramic components for semiconductor fabrication, through which erosion and polymer deposition occurring on ceramic components for semiconductor fabrication are decreased by modifying the dielectric surface of a component having an electrical insulation characteristic so that the ceramic components can be repaired after being used. The method includes activating a surface layer of a component, which is manufactured by sintering a ceramic, and depositing a dielectric coating layer on the surface layer of the ceramic component using a plasma spray process; when the dielectric coating layer is damaged as the ceramic component is used for semiconductor fabrication, removing the dielectric coating layer; and repairing the ceramic component by depositing a dielectric coating layer on the surface layer of the ceramic component from which the damaged dielectric coating layer has been removed.

Abstract: Provided is a method of fabricating and repairing ceramic components for semiconductor fabrication, through which erosion and polymer deposition occurring on ceramic components for semiconductor fabrication are decreased by modifying the dielectric surface of a component having an electrical insulation characteristic so that the ceramic components can be repaired after being used. The method includes activating a surface layer of a component, which is manufactured by sintering a ceramic, and depositing a dielectric coating layer on the surface layer of the ceramic component using a plasma spray process; when the dielectric coating layer is damaged as the ceramic component is used for semiconductor fabrication, removing the dielectric coating layer; and repairing the ceramic component by depositing a dielectric coating layer on the surface layer of the ceramic component from which the damaged dielectric coating layer has been removed.