Abstract: Provided is method of providing a conversation service in an electronic apparatus, including receiving a conversation input from a user terminal, identifying conversation history information associated with a user of the user terminal, obtaining score information corresponding to the user based on the conversation input and the conversation history information, obtaining response information based on the conversation input and the conversation history information, and providing the user terminal with at least one of the score information and the response information.

Abstract: Disclosed are an electrolyte membrane of a membrane-electrode assembly including an electronic insulation layer, which greatly improves the durability of the electrolyte membrane, and a method of preparing the same. The electrolyte membrane includes an ion exchange layer and an electronic insulation layer provided on the ion exchange layer, and the electronic insulation layer includes one or more catalyst complexes, and a second ionomer Particularly, each of the one or more catalyst complex includes a catalyst particle and a first ionomer coated on the entirety or a portion of the surface of the catalyst particle, and the one or more catalyst complexes are dispersed the second ionomer.

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on an axis to define a core and an outer circumference. The first electrode includes an uncoated portion at a long side end thereof and exposed out of the separator along a winding axis direction of the electrode assembly. A part of the uncoated portion is bent in a radial direction of the electrode assembly to form a bending surface region that includes overlapping layers of the uncoated portion, and in a partial region of the bending surface region, the number of stacked layers of the uncoated portion is 10 or more in the winding axis direction of the electrode assembly.

Abstract: According to an embodiment, a holographic microscope comprises a light source, an optical system splitting light emitted from the light source into an object and a reflective mirror and inducing interference between light reflected by the object or transmitted through the object and light reflected by the reflective mirror, a first image sensor receiving the interference light and sensing interference information for the interference light, a second image sensor receiving the light reflected by the object or transmitted through the object and sensing information for the received light, and an image processor deriving a shape of the object based on the interference information sensed by the first image sensor and the information sensed by the second image sensor.

Abstract: The present disclosure includes the use of miRNA inhibitor for treating a disease or condition associated with a decreased level of PSD95 and/or synaptophysin and/or an increased level of caspase 3 (e.g., dystonia, neuropsychiatric diseases, intellectual disability, and/or addiction). The miRNA inhibitor useful for the present disclosure can inhibit miR-485 expression and/or activity, which in turn can increase the level of PSD95 and/or synaptophysin protein of gene expression and decrease the level of caspase 3 protein or gene expression.

Abstract: A pre-folding apparatus for a pouch-type battery includes: a main frame, a rib, a pusher support portion, and a pusher. The main frame includes a pair of columns and a horizontal bar configured to connect upper portions of the columns. The rib installed to be fixed across the pair of columns under the horizontal bar has a forming protrusion whose upper end is flat. The pusher support portion disposed above the rib includes a linear driving portion configured to move the pusher support portion in a vertical direction along the columns. Finally, the pusher installed at the pusher support portion is aligned with the forming protrusion.

Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.

Abstract: A battery module is composed of a plurality of battery cells according to an embodiment of the present invention and includes one positive output terminal formed by connecting the plurality of battery cells, one negative output terminal formed by connecting the plurality of battery cells, a field effect transistor (FET) provided on a current path between the positive output terminal and an external device, a temperature information measurer for measuring temperature information of the plurality of battery cells, and a protection integrated circuit (IC) chip for controlling the FET.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

Abstract: A display device includes a base substrate, a pixel defining layer disposed on the base substrate and including a first opening, a light emitting structure disposed in the first opening of the pixel defining layer, a thin film encapsulation layer disposed on the light emitting structure, a touch electrode disposed on the thin film encapsulation layer, an insulating pattern disposed on the touch electrode and including a second opening which overlaps the first opening, and a high refractive layer disposed on the insulating pattern, the high refractive layer including a plurality of grid patterns disposed on a top surface of the high refractive layer, and a refractive index higher than a refractive index of the insulating pattern.

Abstract: A molding method for a cover window includes: locally heating a peripheral portion of a glass substrate around a central portion of the glass substrate to a temperature of about 610° C. to about 670° C., forming a cover window by pressing the glass substrate, and annealing and cooling the cover window. Accordingly, a cover window in which each of edges has an outwardly convex curved surface through a glass substrate may be formed. In addition, the surface roughness of a cover window formed through a glass substrate may be improved.

Abstract: The present invention relates to a composition for improving insulin sensitivity, comprising a Gentiana trillora Pallas extract. The composition according to the present invention improves insulin sensitivity by reducing the expression of ITIH1, and thus can be effectively used as a therapeutic agent for diabetes, diabetic complications, impaired glucose tolerance, insulin resistance syndrome and the like.

Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.

Abstract: According to an embodiment of the disclosure, a system for controlling an emergency bell based on sound comprises an emergency bell device installed in a crime area, gathering sound information generated in the crime area, detecting an emergency event from the gathered sound information, and generating an emergency bell operation signal, an analysis server receiving, in real-time, the sound information from the emergency bell device if the emergency bell operation signal is received, classifying per-time key sound sources in the sound information, and providing a situation analysis result on whether a crime occurs using the classified per-time key sound sources, and a control server receiving the situation analysis result and providing on-site dispatch information or situation response information to a security terminal in charge of the crime area based on the received situation analysis result.

Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

Abstract: A global index with a repartitioning operator is provided. A method for executing a query includes receiving a query including a request to search a first table based on a first value in a first column. The method may include generating a second table by partitioning the second table based on the first column and including, in the second table, a partition identifier and a reference row identifier. The method may include pruning the second table such that a row corresponding to the first value remains in the second table. The method may include repartitioning the row to a stream based on the partition identifier. The method may include executing the query by at least searching the partition of the first table based on the stream and the row identifier of the row. Related systems and articles of manufacture are provided.

Abstract: A semiconductor device includes a substrate, first and second supporter patterns stacked sequentially on the substrate in a first direction and spaced apart from an upper surface of the substrate, a lower electrode hole that extends through the first and second supporter patterns on the substrate in the first direction, an interface film on side walls and a bottom surface of the lower electrode hole, a lower electrode inside of the lower electrode hole on the interface film, a capacitor dielectric film that is in physical contact with side walls of the interface film, an uppermost surface of the interface film, and an uppermost surface of the lower electrode, the uppermost surface of the interface film is formed on a same plane as an upper surface of the second supporter pattern.

Abstract: A semiconductor device includes a substrate, a capacitor contact structure electrically connected to the substrate, and a lower electrode connected to the capacitor contact structure. The lower electrode includes a first electrode layer and a second electrode layer, the second electrode layer is on the first electrode layer, and the first electrode layer includes a group 14 element. The device includes a capacitor insulating layer covering the lower electrode, and an upper electrode covering the capacitor insulating layer. The first electrode layer includes an outer sidewall in contact with the capacitor insulating layer, the first electrode layer includes an inner sidewall in contact with the second electrode layer, and a concentration of the group 14 element in the inner sidewall of the first electrode layer is higher than a concentration of the group 14 element in the outer sidewall of the first electrode layer.