Patents by Inventor Jin Su Park

Jin Su Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210341971
    Abstract: The present invention relates to a polyimide-based film, a window cover film including the polyimide-based film, and a display panel including the polyimide-based film. More specifically, the present invention relates to a polyimide-based film of which a modulus measured according to ASTM D882 is 5 GPa or more and a rate of change of the modulus, after the polyimide-based film is maintained under a high-temperature and high-humidity condition of 60° C. and 90% RH for 500 hours, is 10% or less.
    Type: Application
    Filed: April 29, 2021
    Publication date: November 4, 2021
    Inventors: Jin Su Park, Hye Ri Kim, Jin Hyung Park, Yoo Seock Hwang
  • Publication number: 20210324193
    Abstract: The present invention relates to a polyimide-based film which does not substantially cause a mura or rainbow phenomenon and has excellent visibility, a window cover film including the same, and a display panel including the same.
    Type: Application
    Filed: April 19, 2021
    Publication date: October 21, 2021
    Inventors: Sun Kug Kim, Hye Ri Kim, Jin Su Park, Hyun Joo Song, Seung Min Jeon
  • Patent number: 11137524
    Abstract: Provided is a hard coating film including a polyamideimide substrate layer and a hard coating layer, each of which has a predetermined refractive index, with a difference in the refractive index between those layers being 0.05. The substrate layer has a tensile modulus of 3 to 7 GPa, at a thickness of 80 ?m, as measured according to ASTM D111. The present invention relates to a hard coating film having improved mechanical and optical properties.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: October 5, 2021
    Assignees: SK Innovation Co., Ltd., SK ie technology Co., Ltd.
    Inventors: Jong Nam Ahn, Keon Hyeok Ko, Byoung Sun Ko, Sang Yoon Park, Jin Su Park, Ho Chul Yoon, Tae Sug Jang
  • Patent number: 11081361
    Abstract: Provided is a plasma etching method comprising supplying both hexafluoroisopropanol (HFIP) gas and argon (Ar) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: August 3, 2021
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim, Jin-Su Park
  • Patent number: 11031077
    Abstract: A resistance variable memory device may include a plurality of memory cells and a control circuit block. The memory cells may be connected between a global word line and a global bit line. The control circuit block may control the memory cells. The control circuit block may include a write pulse control block. The write pulse control block may include a high resistance path circuit and a bypass circuit connected between the global word line and a selected memory cell. The write pulse control block may selectively enable any one of the high resistance path circuit and the bypass circuit in accordance with a position the selected memory cell.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: June 8, 2021
    Assignee: SK hynix Inc.
    Inventors: Ki Won Lee, Jin Su Park
  • Publication number: 20210095085
    Abstract: The present invention relates to a window cover film and a flexible display panel including the same. More particularly, the present invention relates to a window cover film including a base layer and a hard coating layer, and a flexible display panel including the same. Since the window cover film of the present invention has high surface hardness, flexibility, the excellent bending properties, the window cover film may be restored to the original form without permanent deformation and/or damage of the hard coating layer and the window cover film even though a predetermined deformation is repeated.
    Type: Application
    Filed: September 28, 2020
    Publication date: April 1, 2021
    Inventors: Jong Nam Ahn, Keon Hyeok Ko, Byoung Sun Ko, Hye Jin Kim, Je Seung Park, Jin Su Park, A Ran Hwang
  • Patent number: 10962067
    Abstract: The present invention relates to a caliper cover, and more particularly, to a caliper cover that protects a brake caliper and is firmly fixed to the brake caliper.
    Type: Grant
    Filed: April 8, 2019
    Date of Patent: March 30, 2021
    Inventor: Jin Su Park
  • Publication number: 20210050058
    Abstract: A semiconductor memory apparatus includes an access line control circuit. The access line control circuit applies a selected bias voltage to a selected access line coupled with a target memory cell and applies a first unselected bias voltage to an unselected access line adjacent to the selected access line. A second unselected bias voltage is applied to an unselected access line not adjacent to the selected access line.
    Type: Application
    Filed: October 29, 2020
    Publication date: February 18, 2021
    Applicant: SK hynix Inc.
    Inventor: Jin Su PARK
  • Publication number: 20210050057
    Abstract: A semiconductor memory apparatus includes an access line control circuit. The access line control circuit applies a selected bias voltage to a selected access line coupled with a target memory cell and applies a first unselected bias voltage to an unselected access line adjacent to the selected access line. A second unselected bias voltage is applied to an unselected access line not adjacent to the selected access line.
    Type: Application
    Filed: October 29, 2020
    Publication date: February 18, 2021
    Applicant: SK hynix Inc.
    Inventor: Jin Su PARK
  • Publication number: 20210050037
    Abstract: A non-volatile memory apparatus includes a memory cell coupled between a global bit line and a global word line. A bit line control circuit configured to apply a bit line read bias voltage to the global bit line based on a read signal. A snap-back detection circuit coupled to the global word line, and configured to generate a data output signal and a current enable signal by detecting a snap-back of the memory cell. A word line control circuit configured to apply a word line read bias voltage to the global word line based on the read signal, and may increase an amount of a current flowing through the memory cell based on the current enable signal.
    Type: Application
    Filed: November 4, 2020
    Publication date: February 18, 2021
    Applicant: SK hynix Inc.
    Inventors: Seok Joon KANG, Jin Su PARK, Ho Seok EM
  • Publication number: 20210002440
    Abstract: Provided are a polyimide-based film having excellent visibility, a film for a cover window, and a display device including the same.
    Type: Application
    Filed: July 2, 2020
    Publication date: January 7, 2021
    Inventors: Jin Su Park, Keon Hyeok Ko, Byoung Sun Ko, Jong Nam Ahn, Tae Sug Jang
  • Patent number: 10865343
    Abstract: Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 15, 2020
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Chang-Koo Kim, Jun-Hyun Kim, Jin-Su Park
  • Patent number: 10861505
    Abstract: A non-volatile memory apparatus includes a memory cell coupled between a global bit line and a global word line. A bit line control circuit configured to apply a bit line read bias voltage to the global bit line based on a read signal. A snap-back detection circuit coupled to the global word line, and configured to generate a data output signal and a current enable signal by detecting a snap-back of the memory cell. A word line control circuit configured to apply a word line read bias voltage to the global word line based on the read signal, and may increase an amount of a current flowing through the memory cell based on the current enable signal.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: December 8, 2020
    Assignee: SK hynix Inc.
    Inventors: Seok Joon Kang, Jin Su Park, Ho Seok Em
  • Patent number: 10854288
    Abstract: A semiconductor memory apparatus includes an access line control circuit. The access line control circuit applies a selected bias voltage to a selected access line coupled with a target memory cell and applies a first unselected bias voltage to an unselected access line adjacent to the selected access line. A second unselected bias voltage is applied to an unselected access line not adjacent to the selected access line.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: December 1, 2020
    Assignee: SK hynix Inc.
    Inventor: Jin Su Park
  • Patent number: 10853017
    Abstract: A display apparatus including a plurality of displays arranged adjacent to each other, and a connector coupled to adjacent ends of the plurality of displays to couple the plurality of displays to each other, wherein the connector electrically connects the plurality of displays.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: December 1, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin Su Park, Chae Joo Son, Do Sung Jung, Sae Rom Hong, Min Hee Lee, Ji Hye Lim
  • Patent number: 10817222
    Abstract: A semiconductor system may include a memory controller and a non-volatile memory apparatus. The memory controller may generate a recovery command signal by measuring a power off time of the non-volatile memory apparatus. The non-volatile memory apparatus may perform a drift recovery operation based on the recovery command signal.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: October 27, 2020
    Assignee: SK hynix Inc.
    Inventors: Seok Joon Kang, Jin Su Park, Ho Seok Em
  • Publication number: 20200327939
    Abstract: A resistance variable memory device may include a plurality of memory cells and a control circuit block. The memory cells may be connected between a global word line and a global bit line. The control circuit block may control the memory cells. The control circuit block may include a write pulse control block. The write pulse control block may include a high resistance path circuit and a bypass circuit connected between the global word line and a selected memory cell. The write pulse control block may selectively enable any one of the high resistance path circuit and the bypass circuit in accordance with a position the selected memory cell.
    Type: Application
    Filed: December 16, 2019
    Publication date: October 15, 2020
    Applicant: SK hynix Inc.
    Inventors: Ki Won LEE, Jin Su PARK
  • Publication number: 20200257023
    Abstract: Provided is a hard coating film. The hard coating film includes a base layer and a hard coating layer disposed on the base layer and having a pencil hardness of 4H or higher. A surface elongation at break of the hard coating film falls within a predetermined range, as measured by a certain method. The hard coating film shows excellent durability under high-temperature/high-humidity conditions, has no microcracks formed after repeated folding, and shows excellent pencil hardness.
    Type: Application
    Filed: February 10, 2020
    Publication date: August 13, 2020
    Inventors: Jong Nam Ahn, Byoung Sun Ko, Jin Su Park, Tae Sug Jang, Keon Hyeok Ko, Ho Chul Yoon
  • Publication number: 20200174161
    Abstract: Provided is a hard coating film including a polyamideimide substrate layer and a hard coating layer, each of which has a predetermined refractive index, with a difference in the refractive index between those layers being 0.05. The substrate layer has a tensile modulus of 3 to 7 GPa, at a thickness of 80 ?m, as measured according to ASTM D111. The present invention relates to a hard coating film having improved mechanical and optical properties.
    Type: Application
    Filed: December 2, 2019
    Publication date: June 4, 2020
    Inventors: Jong Nam Ahn, Keon Hyeok Ko, Byoung Sun Ko, Sang Yoon Park, Jin Su Park, Ho Chul Yoon, Tae Sug Jang
  • Patent number: D924882
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: July 13, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Jin-Su Park, Gil-Jae Lee, Hee-Bong Kim, Pil-Kwon Jung, Yong-Gu Do