Publication number: 20200087798
Abstract: Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.
Type:
Application
Filed:
September 18, 2019
Publication date:
March 19, 2020
Applicants:
SAMSUNG ELECTRONICS CO., LTD., SOULBRAIN CO., LTD.
Inventors:
Jungah KIM, Mihyun PARK, Jinwoo LEE, Keonyoung KIM, Hyosan LEE, Hoon HAN, Jin Uk LEE, Jung Hun LIM