Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: A printed circuit board includes a first insulating layer; a first wiring layer disposed on one surface of the first insulating layer and including a pad; a second insulating layer disposed on the one surface of the first insulating layer and covering the first wiring layer; a second wiring layer disposed on one surface of the second insulating layer and including a metal pattern; a third insulating layer disposed on the one surface of the second insulating layer and covering the second wiring layer; and a cavity extending through each of the second and third insulating layers, and having a bottom surface and a sidewall respectively exposing the pad of the first wiring layer and the metal pattern of the second wiring layer. The cavity includes a non-through groove in the one surface of the first insulating layer.

Abstract: A printed circuit board includes a first insulating layer; a protective filler layer disposed on one surface of the first insulating layer; a first wiring layer disposed on the one surface of the first insulating layer and having a pad protruding with respect to the protective filler layer; a first via passing through the first insulating layer and contacting the pad; and a second insulating layer disposed on the first wiring layer and the protective filler layer, and having a cavity exposing the pad and at least a portion of the protective filler layer, respectively.

Abstract: A printed circuit board includes a first insulating layer, a first conductor-pattern layer disposed on one surface of the first insulating layer, a first recess formed in the other surface of the first insulating layer opposing one surface of the first insulating layer, a second conductor-pattern layer disposed in the first recess, and a first metal post penetrating the first insulating layer, connecting the first and second conductor-pattern layers to each other, and having one end exposed to a bottom surface of the first recess, wherein the second conductor-pattern layer includes a seed layer disposed on at least a portion of each of a surface of one end of the first metal post exposed to the bottom surface of the first recess and an internal surface of the first recess including the bottom surface of the first recess, and a plating layer disposed on the seed layer to fill at least a portion of the first recess.

Abstract: A coil component includes a body; an internal insulating layer buried in the body; insulating walls disposed on the internal insulating layer, and including openings each having a planar coil shape having at least one turn; coil patterns including first conductive layers disposed in the openings, and second conductive layers disposed between the first conductive layers and internal surfaces of the openings, and each having a first surface in contact with the internal insulating layer and a second surface opposing the first surface; and a recessed portion formed on the second surface of each of the coil patterns and exposing at least portions of the openings of the internal walls.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

Abstract: An embodiment of the present invention relates to a secondary battery, and the object of the present invention is to provide a secondary battery capable of improving the flatness of an electrode assembly and reducing internal resistance when the electrode assembly is rolled.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A printed circuit board includes an insulating layer, a circuit pattern embedded in the insulating layer and including a first metal layer, a second metal layer and a third metal layer disposed between the first metal layer and the second metal layer, and a connection conductor disposed on one surface of the insulating layer and connected to the circuit pattern, wherein the first metal layer is exposed through the one surface of the insulating layer.

Abstract: A display device comprises a display panel including a plurality of sub-pixels defined by a plurality of gate lines and a plurality of data lines; and an auxiliary ground voltage line disposed between two adjacent data lines of the plurality of data lines.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: A coil component includes a body; an internal insulating layer buried in the body; insulating walls disposed on the internal insulating layer, and including openings each having a planar coil shape having at least one turn; coil patterns including first conductive layers disposed in the openings, and second conductive layers disposed between the first conductive layers and internal surfaces of the openings, and each having a first surface in contact with the internal insulating layer and a second surface opposing the first surface; and a recessed portion formed on the second surface of each of the coil patterns and exposing at least portions of the openings of the internal walls.

Abstract: A printed circuit board includes: a first insulating layer; a via pad including a first layer embedded in the first insulating layer and a second layer disposed on the first layer; and a first via layer disposed on the via pad, wherein the second layer has a width decreasing in a direction away from the first layer in a stacking direction of the first and second layers.

Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.

Abstract: The disclosed invention relates to a method of manufacturing a housing-integrated board mating connector, the method including: preparing a housing of an electrical device, the housing having a housing insertion hole formed therein and a part or the entirety of the housing being made of a conductive metal material; inserting a cylindrical ground gasket into the housing insertion hole; preparing a dielectric part and signal terminal part assembly in which a dielectric part surrounds a signal terminal part; and inserting the dielectric part and signal terminal part assembly into an inner circumferential surface of the ground gasket.

Abstract: The present invention provides a method of preparing composition for etching a silicon nitride film comprising stirring ammonium salt-based compound and metaphosphoric acid so that the ammonium salt-based compound dissolves the metaphosphoric acid, and adding phosphoric acid, wherein the ammonium salt-based compound comprises tetramethyl ammonium hydroxide (TMAH).

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.