Patents by Inventor Jing-Cheng Lin

Jing-Cheng Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210167018
    Abstract: A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.
    Type: Application
    Filed: February 16, 2021
    Publication date: June 3, 2021
    Inventors: Hsien-Pin Hu, Chen-Hua Yu, Ming-Fa Chen, Jing-Cheng Lin, Jiun Ren Lai, Yung-Chi Lin
  • Publication number: 20210159147
    Abstract: A semiconductor package includes a semiconductor die, a first thermal conductive pattern and a second thermal conductive pattern. The semiconductor die is encapsulated by an encapsulant. The first thermal conductive pattern is disposed aside the semiconductor die in the encapsulant. The second thermal conductive pattern is disposed over the semiconductor die, wherein the first thermal conductive pattern is thermally coupled to the semiconductor die through the second thermal conductive pattern and electrically insulated from the semiconductor die.
    Type: Application
    Filed: February 5, 2021
    Publication date: May 27, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jing-Cheng Lin, Szu-Wei Lu
  • Patent number: 11018106
    Abstract: A semiconductor device includes a first substrate including a plurality of first pads disposed on a first surface of the first substrate, a second substrate including a plurality of second pads disposed on a second surface of the substrate, a plurality of conductive bumps bonded the plurality of first pads with the plurality of second pads correspondingly, a solder bracing material disposed on the first surface and surrounded the plurality of conductive bumps, an underfill material surrounded the plurality of conductive bumps and disposed between the solder bracing material and the second surface, and a rough interface between the solder bracing material and the underfill material. The rough interface includes a plurality of protruded portions and a plurality of recessed portions.
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: May 25, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Jing-Cheng Lin, Feng-Cheng Hsu
  • Publication number: 20210125900
    Abstract: A device includes a substrate, and a plurality of dielectric layers over the substrate. A plurality of metallization layers is formed in the plurality of dielectric layers, wherein at least one of the plurality of metallization layers comprises a metal pad. A through-substrate via (TSV) extends from the top level of the plurality of the dielectric layers to a bottom surface of the substrate. A deep conductive via extends from the top level of the plurality of dielectric layers to land on the metal pad. A metal line is formed over the top level of the plurality of dielectric layers and interconnecting the TSV and the deep conductive via.
    Type: Application
    Filed: January 5, 2021
    Publication date: April 29, 2021
    Inventors: Jing-Cheng Lin, Ku-Feng Yang
  • Publication number: 20210125964
    Abstract: A method includes bonding a first and a second package component on a top surface of a third package component, and dispensing a polymer. The polymer includes a first portion in a space between the first and the third package components, a second portion in a space between the second and the third package components, and a third portion in a gap between the first and the second package components. A curing step is then performed on the polymer. After the curing step, the third portion of the polymer is sawed to form a trench between the first and the second package components.
    Type: Application
    Filed: January 4, 2021
    Publication date: April 29, 2021
    Applicants: Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Szu-Wei Lu, Ying-Da Wang, Li-Chung Kuo, Jing-Cheng Lin
  • Patent number: 10964594
    Abstract: Methods of packaging semiconductor devices and structures thereof are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a carrier wafer, providing a plurality of dies, and forming a die cave material over the carrier wafer. A plurality of die caves is formed in the die cave material. At least one of the plurality of dies is placed within each of the plurality of die caves in the die cave material. A plurality of packages is formed, each of the plurality of packages being formed over a respective at least one of the plurality of dies.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: March 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company.
    Inventors: Jing-Cheng Lin, Jui-Pin Hung, Yi-Hang Lin, Tsan-Hua Tung
  • Patent number: 10964673
    Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes: a bottom package; wherein an area of a contact surface between the conductor and the through via substantially equals a cross-sectional area of the through via, and the bottom package includes: a molding compound; a through via penetrating through the molding compound; a die molded in the molding compound; and a conductor on the through via. An associated method of manufacturing the semiconductor device is also disclosed.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: March 30, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Jing-Cheng Lin, Ying-Ching Shih, Pu Wang, Chen-Hua Yu
  • Patent number: 10957616
    Abstract: In an embodiment, a device includes: a substrate having a first side and a second side opposite the first side; an interconnect structure adjacent the first side of the substrate; and an integrated circuit device attached to the interconnect structure; a through via extending from the first side of the substrate to the second side of the substrate, the through via being electrically connected to the integrated circuit device; an under bump metallurgy (UBM) adjacent the second side of the substrate and contacting the through via; a conductive bump on the UBM, the conductive bump and the UBM being a continuous conductive material, the conductive bump laterally offset from the through via; and an underfill surrounding the UBM and the conductive bump.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: March 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jing-Cheng Lin, Szu-Wei Lu, Chen-Hua Yu
  • Publication number: 20210074683
    Abstract: An integrated fan out package on package architecture is utilized along with a reference via in order to provide a reference voltage that extends through the InFO-POP architecture. If desired, the reference via may be exposed and then connected to a shield coating that can be used to shield the InFO-POP architecture. The reference via may be exposed by exposing either a top surface or a sidewall of the reference via using one or more singulation processes.
    Type: Application
    Filed: November 16, 2020
    Publication date: March 11, 2021
    Inventors: Jing-Cheng Lin, Chen-Hua Yu, Po-Hao Tsai
  • Patent number: 10943873
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a conductive structure over the substrate. The semiconductor device structure includes first metal oxide fibers over the conductive structure. The semiconductor device structure includes a dielectric layer over the substrate and covering the conductive structure and the first metal oxide fibers. The dielectric layer fills gaps between the first metal oxide fibers.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: March 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jing-Cheng Lin, Chen-Hua Yu, Szu-Wei Lu, Yen-Yao Chi
  • Publication number: 20210057383
    Abstract: A method includes bonding a first and a second package component on a top surface of a third package component, and dispensing a polymer. The polymer includes a first portion in a space between the first and the third package components, a second portion in a space between the second and the third package components, and a third portion in a gap between the first and the second package components. A curing step is then performed on the polymer. After the curing step, the third portion of the polymer is sawed to form a trench between the first and the second package components.
    Type: Application
    Filed: November 10, 2020
    Publication date: February 25, 2021
    Inventors: Szu-Wei Lu, Ying-Da Wang, Li-Chung Kuo, Jing-Cheng Lin
  • Patent number: 10923431
    Abstract: A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: February 16, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsien-Pin Hu, Chen-Hua Yu, Ming-Fa Chen, Jing-Cheng Lin, Jiun Ren Lai, Yung-Chi Lin
  • Publication number: 20210043547
    Abstract: Methods for forming a semiconductor device structure are provided. The method includes forming a conductive feature in a first wafer, and forming a first bonding layer over the conductive feature. The method includes forming a second bonding layer over a second wafer, and bonding the first wafer and the second wafer by bonding the first bonding layer and the second bonding layer. The method also includes forming a second transistor in a front-side of the second wafer, and after forming the second transistor in the front-side of the second wafer, forming a first TSV through the second wafer, wherein the first TSV stops at the conductive feature.
    Type: Application
    Filed: October 26, 2020
    Publication date: February 11, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Jing-Cheng LIN
  • Publication number: 20210043581
    Abstract: A semiconductor device has a conductive via laterally separated from the semiconductor, an encapsulant between the semiconductor device and the conductive via, and a mark. The mark is formed from characters that are either cross-free characters or else have a overlap count of less than two. In another embodiment the mark is formed using a wobble scan methodology. By forming marks as described, defects from the marking process may be reduced or eliminated.
    Type: Application
    Filed: October 26, 2020
    Publication date: February 11, 2021
    Inventors: Jing-Cheng Lin, Chen-Hua Yu, Po-Hao Tsai
  • Patent number: 10916488
    Abstract: Semiconductor packages are provided. One of the semiconductor package includes a semiconductor die, a thermal conductive pattern, an encapsulant and a thermal conductive layer. The thermal conductive pattern is disposed aside the semiconductor die. The encapsulant encapsulates the semiconductor die and the thermal conductive pattern. The thermal conductive layer covers a rear surface of the semiconductor die, wherein the thermal conductive pattern is thermally coupled to the semiconductor die through the thermal conductive layer and electrically insulated from the semiconductor die.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: February 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jing-Cheng Lin, Szu-Wei Lu
  • Patent number: 10916450
    Abstract: A method includes forming a release film over a carrier, forming a metal post on the release film, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, decomposing a first portion of the release film to separate a second portion of the release film from the carrier, and forming an opening in the release film to expose the metal post.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: February 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsien-Ju Tsou, Chih-Wei Wu, Pu Wang, Szu-Wei Lu, Ying-Ching Shih, Jing-Cheng Lin
  • Patent number: 10910267
    Abstract: A device includes a substrate, and an alignment mark including a conductive through-substrate via (TSV) penetrating through the substrate.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: February 2, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsin Chang, Fang Wen Tsai, Jing-Cheng Lin, Wen-Chih Chiou, Shin-Puu Jeng
  • Publication number: 20210028097
    Abstract: A method for forming a package structure may comprise applying a die and vias on a carrier having an adhesive layer and forming a molded substrate over the carrier and around the vias, and the ends of the vias and mounts on the die exposed. The vias may be in via chips with one or more dielectric layers separating the vias. The via chips 104 may be formed separately from the carrier. The dielectric layer of the via chips may separate the vias from, and comprise a material different than, the molded substrate. An RDL having RDL contact pads and conductive lines may be formed on the molded substrate. A second structure having at least one die may be mounted on the opposite side of the molded substrate, the die on the second structure in electrical communication with at least one RDL contact pad.
    Type: Application
    Filed: October 12, 2020
    Publication date: January 28, 2021
    Inventor: Jing-Cheng Lin
  • Publication number: 20210005464
    Abstract: An integrated circuit package and a method of forming the same are provided. A method includes forming a conductive column over a carrier. An integrated circuit die is attached to the carrier, the integrated circuit die being disposed adjacent the conductive column. An encapsulant is formed around the conductive column and the integrated circuit die. The carrier is removed to expose a first surface of the conductive column and a second surface of the encapsulant. A polymer material is formed over the first surface and the second surface. The polymer material is cured to form an annular-shaped structure. An inner edge of the annular-shaped structure overlaps the first surface in a plan view. An outer edge of the annular-shaped structure overlaps the second surface in the plan view.
    Type: Application
    Filed: September 21, 2020
    Publication date: January 7, 2021
    Inventors: Jing-Cheng Lin, Li-Hui Cheng, Po-Hao Tsai
  • Publication number: 20200411485
    Abstract: A chip package structure is provided. The chip package structure includes a redistribution structure including a dielectric structure, a redistribution line, and a seal ring structure. The redistribution line and the seal ring structure are in the dielectric structure, the seal ring structure continuously surrounds the redistribution line, the seal ring structure includes a first seal ring and a second seal ring over and electrically connected to the first seal ring, and the redistribution structure has a first sidewall, a first surface, and a second surface opposite to the first surface. The chip package structure includes a chip structure over the first surface. The chip package structure includes a ground bump over the second surface. The chip package structure includes a conductive shielding film covering the chip structure and the first sidewall of the redistribution structure.
    Type: Application
    Filed: September 14, 2020
    Publication date: December 31, 2020
    Inventors: Chen-Hua YU, An-Jhih SU, Jing-Cheng LIN, Po-Hao TSAI