Abstract: The disclosure is a bonding machine for warped substrates, which includes a first chamber, a second chamber, a pressing unit, a carrier and a plurality of flattening devices. The first chamber is configured to connect with the second chamber to define an enclosed space therebetween. The pressing unit is connected to the first chamber, and the carrier is connected to the second chamber. The pressing unit faces the carrier and is configured to bond the substrates placed on the carrier. The flattening devices are arranged on the carrier, and include a plurality of flattening units and a plurality of telescopic rotary motors. The flattening units are located around the substrate. The telescopic rotation motor is connected to and drives the flattening unit to rotate, move up and down to flatten the substrate placed on the carrier to improve the accuracy of aligning the substrate.

Abstract: A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.

Abstract: Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 ?. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.

Abstract: A chip package structure is provided. The chip package structure includes a chip structure. The chip package structure includes a first ground bump below the chip structure. The chip package structure includes a conductive shielding film disposed over the chip structure and extending onto the first ground bump. The conductive shielding film has a curved bottom surface.

Abstract: A semiconductor device has a conductive via laterally separated from the semiconductor, an encapsulant between the semiconductor device and the conductive via, and a mark. The mark is formed from characters that are either cross-free characters or else have a overlap count of less than two. In another embodiment the mark is formed using a wobble scan methodology. By forming marks as described, defects from the marking process may be reduced or eliminated.

Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes: a bottom package; wherein an area of a contact surface between the conductor and the through via substantially equals a cross-sectional area of the through via, and the bottom package includes: a molding compound; a through via penetrating through the molding compound; a die molded in the molding compound; and a conductor on the through via. An associated method of manufacturing the semiconductor device is also disclosed.

Abstract: A die includes a semiconductor substrate, a through-via penetrating through the semiconductor substrate, a seal ring overlying and connected to the through-via, and an electrical connector underlying the semiconductor substrate and electrically coupled to the seal ring through the through-via.

Abstract: Methods and apparatus for pre-treating semiconductor wafers before edge trimming to enhance wafer edge quality prior to thinning the semiconductor wafers from an initial thickness, and increasing yield post-thinning of the pre-treated, edge trimmed semiconductor wafers. An apparatus includes a stage configured to receive one of a device wafer or a carrier wafer having a device wafer mounted thereto thereon, a laser tool located above the stage and oriented to direct a laser beam downwardly toward the stage, and a vertically movable blade rotatable about a horizontal axis along a radius from a vertical axis at a center of the device wafer and positionable proximate to and radially inward of an outer periphery of the device wafer.

Abstract: A thin-film-deposition machine includes a chamber, a carrier, an extraction ring and a dispensing unit. The chamber includes a containing space and an extraction channel disposed around the containing space. The extraction channel is partitioned into a first, a second and a third channel areas. The carrier is disposed within the containing space. The first channel area is connected to the third channel area via the second channel area. The third channel area is formed with a height greater than that of the first channel area. The extraction ring includes a plurality of extraction holes and a ring channel. The extraction holes are disposed around the carrier for extracting gas from the containing space to the extraction channel, sequentially via the extraction holes, the ring channel. Thereby an even and steady flow field can be formed above the carrier and the thickness uniformity of film deposition can be improved.

Abstract: A method for forming an underfill structure and semiconductor packages including the underfill structure are disclosed. In an embodiment, the semiconductor package may include a package including an integrated circuit die; an interposer bonded to the integrated circuit die by a plurality of die connectors; and an encapsulant surrounding the integrated circuit die. The semiconductor package may further include a package substrate bonded to the interposer by a plurality of conductive connectors; a first underfill between the package and the package substrate, the first underfill having a first coefficient of thermal expansion (CTE); and a second underfill surrounding the first underfill, the second underfill having a second CTE less than the first CTE.

Abstract: A bonding machine with horizontal correction function includes a first chamber, a second chamber, a pressing unit, a carrier, a plurality of level adjustment units, and a plurality of distance measuring units. The first chamber is configured to be connected to the second chamber to define an enclosed space therebetween. The pressing unit is disposed within the first chamber, and the carrier is disposed within the second chamber. The pressing unit faces the carrier and is configured to press the substrates placed on the carrier. The leveling units are disposed on the first chamber, and the distance measuring units are disposed on the second chamber. Each distance measuring unit is configured to project a detecting beam onto the pressing unit, to measure the level of the pressing unit so as to adjust the level of the pressing unit through the level adjustment unit.

Abstract: A method for a deposition apparatus is disclosed. The deposition apparatus includes a chamber, a substrate carrier, a blocker and a cover ring. The cover ring is disposed on the blocker. The substrate carrier carries a wafer and moves with respect to the blocker. A position where the substrate carrier contacts the cover ring start is defined as a contact position, and a first position below the contact position and a second position above the contact position are also defined. When the reaching the first position, a movement speed of the substrate carrier is decreased, and the substrate carrier carries the cover ring to move away from the blocker. When reaching the second position, the movement speed of the substrate carrier away from the blocker is increased. Collision between the wafer and the deposition apparatus is eliminated to prevent undesired particles from occurring and the wafer from being damaged.

Abstract: A method includes forming an under bump metallization (UBM) layer over a dielectric layer, forming a redistribution structure over the UBM layer, disposing a semiconductor device over the redistribution structure, removing a portion of the dielectric layer to form an opening to expose the UBM layer, and forming a conductive bump in the opening such that the conductive bump is coupled to the UBM layer.

Abstract: A parallelism-adjustable bonding machine includes a first chamber, a second chamber, a press-bonding unit, a carrier and plural parallelism-adjusting units. The first chamber is configured to connect to the second chamber, so as to define a closed space therebetween. The press-bonding unit is disposed within the first chamber, and the carrier is disposed within the second chamber. The press-bonding unit is disposed to face the carrier configured to press and bond substrates placed on the carrier. Each of the parallelism-adjusting units is disposed on the first chamber, and includes an adjustment shaft extending through the first chamber and connected to the press-bonding unit. The adjustment shaft includes an adjustment member located outside the first chamber and the closed space. A user is able to adjust a parallelism between the press-bonding unit and the carrier in an efficient and precise manner, from the adjustment member.

Abstract: Methods for forming a semiconductor device structure are provided. The method includes forming a conductive feature in a first wafer, and forming a first bonding layer over the conductive feature. The method includes forming a second bonding layer over a second wafer, and bonding the first wafer and the second wafer by bonding the first bonding layer and the second bonding layer. The method also includes forming a second transistor in a front-side of the second wafer, and after forming the second transistor in the front-side of the second wafer, forming a first TSV through the second wafer, wherein the first TSV stops at the conductive feature.

Abstract: The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

Abstract: An integrated fan out package on package architecture is utilized along with a reference via in order to provide a reference voltage that extends through the InFO-POP architecture. If desired, the reference via may be exposed and then connected to a shield coating that can be used to shield the InFO-POP architecture. The reference via may be exposed by exposing either a top surface or a sidewall of the reference via using one or more singulation processes.

Abstract: The present disclosure provides a quantum dot particle with passivation layer, which mainly includes a one quantum dot (QD) particle, a first-passivation layer and a second-passivation layer, wherein the first-passivation layer is disposed on a surface of the QD particle, and the second-passivation layer is disposed on a surface of the first-passivation layer. A precursor chosen for forming the first-passivation layer does not cause damage to the QD particle. A precursor of the second-passivation layer includes a composition of trimethylaluminum (TMA) and water, or TMA and ozone, wherein a density of the second-passivation layer is greater than that of the first-passivation layer. The precursor of the second-passivation layer is kept out by the first-passivation layer, such that to prevent the precursor of the second-passivation layer from contacting the QD particle and causing deterioration thereto, and hence to improve a life cycle of the QD particle.

Abstract: A detachable atomic layer deposition apparatus for powders is disclosed, which includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to the shaft sealing device. The vacuum chamber is fixed to one end of the shaft sealing device via at least one fixing member. The driving unit drives the vacuum chamber to rotate via the shaft sealing device to agitate the powders in a reaction space of the vacuum chamber to facilitate the formation of thin films with uniform thickness on the surface of the powders. In addition, the vacuum chamber can be removed from the shaft sealing device for users to take out the powders from the vacuum chamber and clean the vacuum chamber, thereby improving the convenience in usage.

Abstract: The invention provides a vibrating deposition device, which includes a vacuum chamber, a fixed rod and a powder tank. The vacuum chamber includes an inner side surface, and a plurality of bulges and notches are arranged on the inner side surface. The fixed rod and the powder tank are arranged in an accommodating space of the vacuum chamber, wherein the powder tank is used for accommodating powders and contacts the inner side surface of the vacuum chamber through a protruding unit. When the vacuum chamber rotates, the protruding unit will be displaced between the bulge and the notch, and the powder tank will be displaced up and down relative to the vacuum chamber to vibrate powders in the powder tank, so that a uniform film will be formed on the surface of powders.