Abstract: A semiconductor device is provided which includes a dielectric layer over a gate structure of the semiconductor device. The semiconductor device also includes a conductive interconnect configured to couple the gate structure with an I/O region over the conductive interconnect. The semiconductor also includes a metal silicide layer disposed between the conductive interconnect and the dielectric layer where the metal silicide is a silicide form of a metal different from the conductive interconnect.

Abstract: A catalytic material for treating an exhaust gas produced by a natural gas engine, which catalytic material comprises a molecular sieve and a platinum group metal (PGM) supported on the molecular sieve, wherein the molecular sieve has a framework comprising silicon, oxygen and optionally germanium, and has a content of heteroatom T-atoms is ?about 0.20 mol %.

Abstract: Provided are a card holder and a mobile terminal. The card holder includes: a first groove, disposed on a front surface of the card holder and configured to accommodate a first Subscriber Identity Module (SIM); and a second groove, disposed on a back surface of the card holder and configured to accommodate a second SIM, wherein a size of the second SIM is different from a size of the first SIM. The mobile terminal includes a card slot, wherein the card slot is configured to insert the card holder. The present disclosure solves the problem caused by incompatibility of one same mobile terminal with SIMs of different sizes, and achieves the technical effect of compatibility with the SIMs of the different sizes.

Abstract: An output over-voltage protection circuit for power factor correction, which includes a chip external compensation network, a chip external resistor divider network, a static over-voltage detection circuit, a dynamic over-voltage detection circuit and a compare circuit; The chip external compensation network is connected between the chip external resistor divider network and the dynamic over-voltage detection circuit, the chip external compensation network converts the dynamic over-voltage signal conversion to the dynamic current signal and conveys it to the dynamic over-voltage detection circuit, the dynamic over-voltage detection circuit detects the dynamic current signal and ultimately produces the dynamic over-voltage signal (DYOVP); The dynamic over-voltage signal (DYOVP) is inputted into the compare circuit, which converts the dynamic over-voltage signal (DYOVP) into a voltage compared with a reference voltage and outputs a over-voltage control signal (OVP), so as to achieve a dynamic over-voltage prote

Abstract: A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.

Abstract: An air filter assembly is disclosed. The air filter assembly is comprised of a frame consisting of two sections configured for releasable holding of a recyclable filter material. The air filter assembly is further comprised of a fragrance contained in a container configured to passively release the fragrance during air flow. The air filter assembly is further comprised of at least one compartment for securely holding the fragrance container.

Abstract: A subscriber identity module card compatible apparatus and a terminal device, including: a base; a first card slot for a first SIM card to be inserted into, a second card slot for a second SIM card to be inserted into, and a stopper used for preventing the second SIM card from being inserted into the second card slot after the first SIM card is inserted into the first card slot or preventing the first SIM card from being inserted into the first card slot after the second SIM card is inserted into the second card slot; all of the first card slot, the second card slot and the stopper are arranged on the base, and the stopper is arranged between the first card slot and the second card slot.

Abstract: A solid-phase polymerization method of high-molecular-weight aliphatic polyester conducts the solid-phase polymerization of aliphatic polyester prepolymer under a gas stream containing sulfonic acid catalyst. The method features preparing metal free aliphatic polyester with high molecular weight, good color and luster and perfect thermal stability efficiently. The non-metal-ion aliphatic polyester is not only applicable to common use, but is also suitable as high value-added medical material and packing material which contacts with food directly than other metal-containing polyester.

Abstract: A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.

Abstract: The present invention discloses a method for processing non-unicast routes information in a TRILL network and a corresponding RBridge, wherein the RBridge has a neighbor relation with a plurality of other RBridges in the TRILL network, and the RBridge is the RBridge which computes non-unicast routes information in the neighbor relation, and in the method, the RBridge executes steps of: sending an acknowledgement message to the plurality of other RBridges, wherein the acknowledgement message acknowledges that the RBridge is the RBridge which computes the non-unicast routes information; obtaining a network topology related to the non-unicast routes information in the TRILL network; computing the non-unicast routes information based on the network topology; and distributing the computed non-unicast routes information to the plurality of other RBridges. The method and the corresponding RBridge are capable of reducing consumption of CPU resource of RBridges in the TRILL network.

Abstract: A method for making items of clothing having shape memory, the method comprising: synthesizing (31) a shape memory polyurethane; subjecting (34) the shape memory polyurethane to wet spinning, dry spinning, melt spinning or multi-component spinning in order to produce shape memory fibers; and knitting or weaving (36) the shape memory fibers to form the item of clothing.

Abstract: Molds and methods for forming molds used to make retroreflective articles are disclosed. The mold includes a plurality of shims joined together wherein each of the shims comprises a plurality of alternating cube corners. Each of the cube corners includes three facets each comprising a planar surface, four exterior sides, and three interior edges. The three interior edges meet at an apex, wherein each of the cube corners shares, with an adjacent one of the cube corners, at least one exterior side intersected by a respective one of the interior edges of each of the adjacent cube corners. A retroreflective article is formed using the mold and the retroreflective article includes goemetric structures corresponding to the cube corners of the plurality of shims of the mold.

Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

Abstract: A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.

Abstract: A computer system for image processing has a first working environment with a first program for image processing, as well as a second working environment, logically separated from the first working environment, with a second program for image processing. The first working environment is implemented on a first server. Furthermore, the first working environment is designed to receive a first command to execute the first program and a second command to execute the second program, and to send the second command to the second working environment. The second working environment is designed to send an image processed by the second program to the first working environment . The communication of a user with the first and second program thus occurs via a uniform platform in the form of the first working environment, and the integration of the second program for image processing into the workflow is facilitated.

Abstract: A subscriber identity module card compatible apparatus and a terminal device, including: a base; a first card slot for a first SIM card to be inserted into, a second card slot for a second SIM card to be inserted into, and a stopper used for preventing the second SIM card from being inserted into the second card slot after the first SIM card is inserted into the first card slot or preventing the first SIM card from being inserted into the first card slot after the second SIM card is inserted into the second card slot; all of the first card slot, the second card slot and the stopper are arranged on the base, and the stopper is arranged between the first card slot and the second card slot.

Abstract: Methods and apparatus for managing stack data in multi-core processors having scratchpad memory or limited local memory. In one embodiment, stack data management calls are inserted into software in accordance with an integer linear programming formulation and a smart stack data management heuristic. In another embodiment, stack management and pointer management functions are inserted before and after function calls and pointer references, respectively. The calls may be inserted in an automated fashion by a compiler utilizing an optimized stack data management runtime library.

Abstract: In a method and apparatus to automatically generate a selected image data set from an entirety of medical measurement data of an examination subject, the entirety of the measurement data of the examination subject is received as input data, and at least a portion of the measurement data is automatically analyzed with regard to a number of specific, topologically representative content feature parameter values of the examination subject selected measurement data from the entirety is made, with the selected data associated with defined, specific, topologically representative content feature parameter values. The selected measurement data are assembled into a selected image data set, as output data.

Abstract: A method for growing high mobility, high charge Nitrogen polar (N-polar) or Nitrogen face (In,Al,Ga)N/GaN High Electron Mobility Transistors (HEMTs). The method can provide a successful approach to increase the breakdown voltage and reduce the gate leakage of the N-polar HEMTs, which has great potential to improve the N-polar or N-face HEMTs' high frequency and high power performance.

Abstract: An output over-voltage protection circuit for power factor correction, which includes a chip external compensation network, a chip external resistor divider network, a static over-voltage detection circuit, a dynamic over-voltage detection circuit and a compare circuit; The chip external compensation network is connected between the chip external resistor divider network and the dynamic over-voltage detection circuit, the chip external compensation network converts the dynamic over-voltage signal conversion to the dynamic current signal and conveys it to the dynamic over-voltage detection circuit, the dynamic over-voltage detection circuit detects the dynamic current signal and ultimately produces the dynamic over-voltage signal (DYOVP); The dynamic over-voltage signal (DYOVP) is inputted into the compare circuit, which converts the dynamic over-voltage signal (DYOVP) into a voltage compared with a reference voltage and outputs a over-voltage control signal (OVP), so as to achieve a dynamic over-voltage prote