Patents by Inventor Jing Yi

Jing Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11874711
    Abstract: Systems and methods of generating electrical current from at least one photovoltaic cell are described herein. In some embodiments, a dual-cell arrangement of photovoltaic cells may be disposed on a face. Equal parts of a first photovoltaic cell and a second photovoltaic cell may be disposed on the face such that when a portion of the face is shaded, the first photovoltaic cell and the second photovoltaic cell receive substantially equal amounts of electromagnetic radiation. In some embodiments, the first photovoltaic cell and the second photovoltaic cell comprises a plurality of sub-cell connected in series and parallel to optimize the power output form the partially exposed cells.
    Type: Grant
    Filed: March 17, 2021
    Date of Patent: January 16, 2024
    Inventors: John M. Kenkel, Mohamed Bouchoucha, Jing-Yi Wang
  • Publication number: 20230369143
    Abstract: A test structure on a wafer is provided. The test structure includes a plurality of cells under test, a first output pad and a second output pad coupled to different cells, a plurality of first input pads, and a plurality of second input pads. The cells are arranged in rows and columns of a test array. Each of the first input pads is coupled to the cells in respective column of the test array. Each of the second input pads is coupled to the cells in respective row of the test array. A first voltage is applied to one of the first input pads and a second voltage is applied to one of the second input pads to turn on a cell, and a current flowing through the turned-on cell is measured.
    Type: Application
    Filed: June 28, 2023
    Publication date: November 16, 2023
    Inventors: Jing-Yi LIN, Chih-Chuan YANG, Kuo-Hsiu HSU, Lien-Jung HUNG
  • Patent number: 11728227
    Abstract: Test structures on a wafer are provided. A plurality of cells are arranged in rows and columns of a test array. First and second output pads are formed on opposite sides of the test array. A first output pad is coupled to the cells in one half of the rows of the test array. A second output pad is coupled to the cells in the other half of the rows of the test array. Each first input pad is coupled to the cells in respective column of the test array. Each second input pad is coupled to the cells in respective row of the test array. When a first voltage is applied to one of the first input pads and a second voltage is applied to one of the second input pads, current flowing through the turned-on cell is measured through the first or second output pad.
    Type: Grant
    Filed: May 13, 2022
    Date of Patent: August 15, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jing-Yi Lin, Chih-Chuan Yang, Kuo-Hsiu Hsu, Lien-Jung Hung
  • Publication number: 20230249999
    Abstract: The present invention provides a sewage treatment biological agent and a preparation method and application thereof. The sewage treatment biological agent according to an embodiment of the present invention includes an induced nucleus. The induced nucleus has good bioaffinity. A microbial flora can be attached to the induced nucleus to achieve rapid growth. As the microbial flora gathers and grows on the induced nucleus, the granulation is gradually achieved by the sewage treatment biological agent to facilitate the sewage treatment. The microbial flora grows on the induced nucleus, and the growth process of microbial flora is a covering growth process which starts from the induced nucleus and gradually expands outward and centers on the induced nucleus. During the growth of microbial flora, extracellular polymers are secreted, which can further promote the granulation process by the sewage treatment biological agent.
    Type: Application
    Filed: October 9, 2022
    Publication date: August 10, 2023
    Applicant: Hunan Sanyou Environmental Protection Technology Co. LTD
    Inventors: Yan ZHONG, Dan HOU, Hongbo HAN, Jing YI
  • Publication number: 20230253470
    Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.
    Type: Application
    Filed: April 17, 2023
    Publication date: August 10, 2023
    Inventors: Chi-Sheng Lai, Yu-Fan Peng, Li-Ting Chen, Yu-Shan Lu, Yu-Bey Wu, Wei-Chung Sun, Yuan-Ching Peng, Kuei-Yu Kao, Shih-Yao Lin, Chih-Han Lin, Pei-Yi Liu, Jing Yi Yan
  • Publication number: 20230226179
    Abstract: This invention concerns in general treatment of diseases and pathological conditions with anti-VEGF antibodies. More specifically, the invention concerns the treatment of human patients susceptible to or diagnosed with cancer using an anti-VEGF antibody, preferably in combination with one or more additional anti-tumor therapeutic agents for the treatment of ovarian cancer.
    Type: Application
    Filed: January 4, 2023
    Publication date: July 20, 2023
    Applicant: Genentech, Inc.
    Inventors: Jakob Dupont, Cornelia Irl, Amreen Husain, Mika A. Sovak, Jing Yi, Hoa Nguyen
  • Publication number: 20230225098
    Abstract: A method includes forming a first fin protruding from a substrate in a first region of the substrate and a second fin protruding from the substrate in a second region of the substrate, recessing a portion of the first fin, thereby forming a first recess, recessing a portion of the second fin, thereby forming a second recess, depositing a blocking layer in the second recess, growing a base epitaxial layer in the first recess, removing the blocking layer from the second recess, and growing a doped epitaxial layer in the first recess and the second recess. The base epitaxial layer is dopant free. The doped epitaxial layer abuts the first fin in the first region and the second fin in the second region.
    Type: Application
    Filed: June 4, 2022
    Publication date: July 13, 2023
    Inventors: Chih-Chuan Yang, Wen-Chun Keng, Shih-Hao Lin, Hsin-Wen Su, Yu-Kuan Lin, Ping-Wei Wang, Jing-Yi Lin
  • Publication number: 20230187540
    Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, an epitaxial region formed in the fin structure and adjacent to the gate structure. The epitaxial region can embed a plurality of clusters of dopants.
    Type: Application
    Filed: February 6, 2023
    Publication date: June 15, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Wei Lee, Chii-Horng Li, Heng-Wen Ting, Yee-Chia Yeo, Yen-Ru Lee, Chih-Yun Chin, Chih-Hung Nien, Jing-Yi Yan
  • Patent number: 11631745
    Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.
    Type: Grant
    Filed: April 2, 2021
    Date of Patent: April 18, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Sheng Lai, Yu-Fan Peng, Li-Ting Chen, Yu-Shan Lu, Yu-Bey Wu, Wei-Chung Sun, Yuan-Ching Peng, Kuei-Yu Kao, Shih-Yao Lin, Chih-Han Lin, Pei-Yi Liu, Jing Yi Yan
  • Patent number: 11629083
    Abstract: The present invention relates to microbial carriers for wastewater treatment, and in particular, relates to an organic composite powder carrier and its application for strengthening biological denitrification in municipal wastewater treatment. The organic composite powder carrier is compounded by a microbial carrier with a relatively large equivalent particle size and an organic alternative carbon source in the form of ultrafine powder. The composite powder carrier in the present invention includes a dedicated organic alternative carbon source, such as polyhydroxyalkanoates (PHA). The organic alternative carbon source can exclude the competitive relationship between microorganisms to ensure that denitrifying bacteria exclusively obtain electron donors required for denitrification.
    Type: Grant
    Filed: August 12, 2020
    Date of Patent: April 18, 2023
    Assignees: TONGJI UNIVERSITY, HUNAN SANYOU ENVIRONMENTAL TECHNOLOGY CO., LTD
    Inventors: Xiaohu Dai, Xiaoli Chai, Bin Lu, Dan Hou, Hongbo Han, Yue Mou, Jing Yi
  • Publication number: 20230067988
    Abstract: A semiconductor structure includes a stack of semiconductor layers disposed over a protruding portion of a substrate, isolation features disposed over the substrate, wherein a top surface of the protruding portion of the substrate is separated from a bottom surface of the isolation features by a first distance, a metal gate stack interleaved with the stack of semiconductor layers, where a bottom portion of the metal gate stack is disposed on sidewalls of the protruding portion of the substrate and where thickness of the bottom portion of the metal gate stack is defined by a second distance that is less than the first distance, and epitaxial source/drain features disposed adjacent to the metal gate stack.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Inventors: Shih-Hao Lin, Chih-Chuan Yang, Hsin-Wen Su, Jing-Yi Lin, Shang-Rong Li, Chong-De Lien
  • Patent number: 11590361
    Abstract: This invention provides a method applied for the new dynamic arc radiotherapy treatment planning to calculate an optimal arc angle. With this invention, an operator without rich experience is able to reach the expected low dose in lungs easily and quickly. This invention can not only estimate the distribution of low radiation dose in lungs but also reduce the shortcomings like consumption of time and inaccuracy caused by manual trial and error.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: February 28, 2023
    Assignee: NATIONAL YANG-MING UNIVERSITY
    Inventors: Tung-Hsin Wu, Pei-Wei Shueng, Chen-Xiong Hsu, Jing-Yi Sun, Kuan-Heng Lin
  • Patent number: 11575026
    Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, an epitaxial region formed in the fin structure and adjacent to the gate structure. The epitaxial region can embed a plurality of clusters of dopants.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: February 7, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Wei Lee, Chii-Horng Li, Heng-Wen Ting, Yee-Chia Yeo, Yen-Ru Lee, Chih-Yun Chin, Chih-Hung Nien, Jing-Yi Yan
  • Publication number: 20220388881
    Abstract: The invention relates to a new biological fluidized bed process with high concentration powder carriers used for the treatment of municipal wastewater, which is a fluidized bed system based on the principle of sewage biochemical treatment, by adding a compound powder carrier to the biochemical tank, and forming a high concentration mixture after mixing and microbial attachment; the sludge mixture after the reaction is concentrated and separated, and then enters the compound powder carrier cyclone separation and recovery system, which can separate most of the compound powder carrier from the discharged excess sludge, and then return to the biochemical tank for recycling. The highly integrated municipal wastewater treatment process proposed in the invention has high treatment efficiency, small occupation area, low operation energy consumption, and can realize the doubling of sewage treatment capacity and the improvement of effluent water quality without adding additional occupancy.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 8, 2022
    Inventors: Xiaoli CHAI, Yue MU, Jing YI, Zeheng TANG, Hongbo HAN, Dan HOU
  • Publication number: 20220389117
    Abstract: The present invention discloses that cancer cells secrete succinate into extracellular milieu, which increases macrophage migration and mediates TAM polarization. Furthermore, succinate induces cancer cell EMT, enhances cancer cell migration, and promotes cancer metastasis in murine models. It is indicated in the present invention that serum succinate concentration is elevated in patients with lung cancer when compared to healthy subjects. It implies that during cancer development and progression, cancer cells release a large quantity of succinate into the circulation. As shown in the present invention, serum succinate has a high discriminatory power, it represents a new class of circulating oncometabolite with potential value for predicting NSCLC. Furthermore, as elevation of succinate level in LLC tumor model is accompanied by increased TAMs in the subcutaneous tumors and enhanced cancer metastasis, serum succinate may be a useful therapeutic biomarker for NSCLC treatment.
    Type: Application
    Filed: October 16, 2020
    Publication date: December 8, 2022
    Inventors: Cheng-Chin KUO, Jing-Yiing WU
  • Patent number: 11472725
    Abstract: A recovery system of composite powder carrier in HPB municipal wastewater treatment includes a biochemical tank and a concentration tank. The composite powder carrier is added to the biochemical tank for biochemically treating on the wastewater. The mixed liquid is then made to flow into the concentration tank. The supernatant obtained after filtration is then discharged. The concentrated sludge is returned to the biochemical tank, and the excess concentrated sludge is transported to a separator. The separator separates the substances with large specific gravity from those having smaller specific gravity, and the substances with large specific gravity are recycled to the biochemical tank for reuse. Matter having smaller specific gravity is discharged. The separator can be used to separate the composite powder carriers for recycling, which improves the utilization rate of the composite powder carriers and reduces the operation cost of the HPB technology for wastewater treatment.
    Type: Grant
    Filed: August 19, 2020
    Date of Patent: October 18, 2022
    Assignees: TONGJI UNIVERSITY, HUNAN SANYOU ENVIRONMENTAL TECHNOLOGY CO., LTD
    Inventors: Xiaohu Dai, Xiaoli Chai, Bin Lu, Dan Hou, Hongbo Han, Yue Mou, Jing Yi
  • Publication number: 20220310599
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming an epitaxial structure having a first doping type over a first portion of a semiconductor substrate. A second portion of the semiconductor substrate is formed over the epitaxial structure and the first portion of the semiconductor substrate. A first doped region having the first doping type is formed in the second portion of the semiconductor substrate and directly over the epitaxial structure. A second doped region having a second doping type opposite the first doping type is formed in the second portion of the semiconductor substrate, where the second doped region is formed on a side of the epitaxial structure. A plurality of fins of the semiconductor substrate are formed by selectively removing portions of the second portion of the semiconductor substrate.
    Type: Application
    Filed: June 15, 2022
    Publication date: September 29, 2022
    Inventors: Jing-Yi Lin, Chih-Chuan Yang, Shih-Hao Lin
  • Publication number: 20220302281
    Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, an epitaxial region formed in the fin structure and adjacent to the gate structure. The epitaxial region can embed a plurality of clusters of dopants.
    Type: Application
    Filed: March 19, 2021
    Publication date: September 22, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Wei LEE, Chii-Horng LI, Heng-Wen TING, Yee-Chia YEO, Yen-Ru LEE, Chih-Yun CHIN, Chih-Hung NIEN, Jing Yi YAN
  • Publication number: 20220285369
    Abstract: A substrate includes a first doped region having a first type dopant, and a second doped region having a second type dopant and adjacent to the first doped region. A stack is formed that includes first layers and second layers alternating with each other. The first and second layers each have a first and second semiconductor material, respectively. The second semiconductor material is different than the first semiconductor material. A mask element is formed that has an opening in a channel region over the second doped region. A top portion of the stack not covered by the mask element is recessed. The stack is then processed to form a first and a second transistors. The first transistor has a first number of first layers. The second transistor has a second number of first layers. The first number is greater than the second number.
    Type: Application
    Filed: May 23, 2022
    Publication date: September 8, 2022
    Inventors: Shih-Hao Lin, Kian-Long Lim, Chih-Chuan Yang, Chia-Hao Pao, Jing-Yi Lin
  • Patent number: 11430788
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming an epitaxial structure having a first doping type over a first portion of a semiconductor substrate. A second portion of the semiconductor substrate is formed over the epitaxial structure and the first portion of the semiconductor substrate. A first doped region having the first doping type is formed in the second portion of the semiconductor substrate and directly over the epitaxial structure. A second doped region having a second doping type opposite the first doping type is formed in the second portion of the semiconductor substrate, where the second doped region is formed on a side of the epitaxial structure. A plurality of fins of the semiconductor substrate are formed by selectively removing portions of the second portion of the semiconductor substrate.
    Type: Grant
    Filed: February 24, 2020
    Date of Patent: August 30, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jing-Yi Lin, Chih-Chuan Yang, Shih-Hao Lin