Abstract: Semiconductor devices and methods of forming the same include forming an inner spacer on a semiconductor fin. Two outer spacers are formed around the inner spacer, with one outer spacer being in contact with the inner spacer and with the other outer spacer being separated from the inner spacer by a gap. A dipole-forming layer is formed on the semiconductor fin in the gap. The inner spacer is etched away. A gate stack is formed on the semiconductor fin, between the outer spacers.

Abstract: A method for forming a semiconductor device structure includes removing a portion of a first dielectric layer surrounding each of a plurality of channel layers of at least a first nanosheet stack. A portion of a second dielectric layer surrounding each of a plurality of channel layers of at least a second nanosheet stack is crystallized. A dipole layer is formed on the etched first dielectric layer and the crystallized portion of the second dielectric layer. The dipole layer is diffused into the etched first dielectric layer. The crystallized portion of the second dielectric layer prevents the dipole layer form diffusing into the second dielectric layer.

Abstract: A vertical field effect transistor (VFET) has a top source/drain (S/D) with a first region having a first area and a first capacitance and a second region having a second area and a second capacitance. A first top spacer on a gate cross section area. A second top spacer with a varying thickness is disposed the first top spacer. Both the first and second top spacers are between the top S/D and the gate cross section area. Due to the varying thickness of the second spacer with the smaller thickness closer to the fin, the separation distance between the larger, first area and the gate cross section area is greater than the separation distance between the smaller, second area and the gate cross section area. Therefore, the first capacitance is reduced because of the larger separation distance and the second capacitance is reduced because of the smaller second area.

Abstract: A SiGe channel FinFET structure has an asymmetric threshold voltage, Vth, laterally along the SiGe channel. Uses of sacrificial layers, selective Ge condensation, and/or the use of spacers enable precise creation of first and second channel regions with different Ge concentration, even for channels with short lengths. The second channel region near the source side of the device is modified with a selective Germanium (Ge) condensation to have a higher Vth than the first channel region near the drain side. A lateral electric field is created in the channel to enhance carrier mobility.

Abstract: An approach provides a semiconductor structure for a p-type field effect transistor that includes a nanosheet stack with a top protective layer composed of a plurality of oxygen reservoir layers between a plurality of channel layers, wherein the nanosheet stack is a semiconductor substrate adjacent to one or more isolation structures. The approach includes an interfacial material is around each layer of the plurality of channel layers and on the semiconductor substrate and a layer of gate dielectric material that is over the interfacial material, the top protective layer, and on the one or more isolation structures. The approach includes a layer of a work function metal is over the gate dielectric material and a liner that is over the nanosheet stack and over the work function metal on each of the one or more isolation structures that is covered by a low resistivity metal layer.

Abstract: A method of forming a semiconductor structure includes forming a recess within a semiconductor substrate, the recess is located between adjacent fins of a plurality of fins on the semiconductor substrate, forming a first liner above a perimeter including the recess, top surfaces of the semiconductor substrate, and top surfaces and sidewalls of the plurality of fins, the first liner includes a first oxide material, forming a second liner directly above the first liner, and forming a third liner directly above the second liner, the third liner includes a nitride material, the second liner includes a second oxide material capable of creating a dipole effect that neutralizes positive charges generated within the third liner and between the third liner and the first liner.

Abstract: A method is presented for attaining different gate dielectric thicknesses across a plurality of field effect transistor (FET) devices. The method includes forming an interfacial dielectric around alternate semiconductor layers of the plurality of FET devices, depositing a first sacrificial capping layer over the plurality of FET devices, selectively removing the first sacrificial capping layer from a first set of the plurality of FET devices, depositing a second sacrificial capping layer and an oxygen blocking layer, selectively removing the oxygen blocking layer from a second set of the plurality of FET devices, and performing an anneal to create the different gate dielectric thicknesses for each of the plurality of FET devices.

Abstract: A method of forming a nanosheet device is provided. The method includes forming two amorphous source/drain fills on a substrate and one or more semiconductor nanosheet layers between the two amorphous source/drain fills. The method further includes forming a gate dielectric layer on exposed portions of the one or more semiconductor nanosheet layers. The method further includes forming a protective capping layer on the gate dielectric layer, and subjecting the two amorphous source/drain fills to a recrystallization treatment to cause a phase change from the amorphous state to a single crystal or poly-crystalline phase.

Abstract: A method is presented for attaining different gate threshold voltages across a plurality of field effect transistor (FET) devices without patterning between nanosheet channels. The method includes forming a first set of nanosheet stacks having a first intersheet spacing, forming a second set of nanosheet stacks having a second intersheet spacing, where the first intersheet spacing is greater than the second intersheet spacing, depositing a high-k (HK) layer within the first and second nanosheet stacks, depositing a material stack that, when annealed, creates an amorphous HK layer in the first set of nanosheet stacks and a crystallized HK layer in the second nanosheet stacks, depositing a dipole material, and selectively diffusing the dipole material into the amorphous HK layer of the first set of nanosheet stacks to provide the different gate threshold voltages for the plurality of FET devices.

Abstract: Devices and methods for a vertical field effect transistor (VTFET) semiconductor device include recessing a gate dielectric and a gate conductor of a vertical gate structure below a top of a vertical fin to form openings between the top of the vertical fin and an etch stop layer, the top of the vertical fin being opposite to a substrate at a bottom of the vertical fin. A spacer material is deposited in the openings to form a spacer corresponding to each of the openings. Each spacer is recessed below the top of the vertical fin. A top spacer is selectively deposited in each of the openings to line the etch stop layer and the spacer such that the top of the vertical fin is exposed above the top spacer and the spacer is covered by the top spacer. A source/drain region is formed on the top of the vertical fin.

Abstract: Provided is a nanosheet semiconductor device. In embodiments of the invention, the nanosheet semiconductor device includes a channel nanosheet formed over a substrate. The nanosheet semiconductor device includes a buffer layer formed between the substrate and the channel nanosheet. The buffer layer has a lower conductivity than the channel nanosheet.

Abstract: A method for fabricating a semiconductor device including vertical transistors having uniform channel length includes defining a channel length of at least one first fin formed on a substrate in a first device region and a channel length of at least one second fin formed on the substrate in a second device region. Defining the channel lengths includes creating at least one divot in the second device region. The method further includes modifying the channel length of the at least one second fin to be substantially similar to the channel length of the at least one first fin by filling the at least one divot with additional gate conductor material.

Abstract: Vertical field effect transistors (VFETs) having a gradient threshold voltage and an engineered channel are provided. The engineered channel includes a vertical dog-bone shaped channel structure that is composed of silicon having a germanium content that is 1 atomic percent or less and having a lower portion having a first channel width, a middle portion having a second channel width that is less than the first channel width, and an upper portion having the first channel width. Due to the quantum confinement effect, the middle portion of the vertical dog-bone shaped channel structure has a higher threshold voltage than the lower portion and the upper portion of the vertical dog-bone shaped channel structure. Hence, the at least one vertical dog-bone shaped channel structure has an asymmetric threshold voltage profile. Also, the VFET containing the vertical dog-bone shaped channel structure has improved electrical characteristics and device performance.

Abstract: A replacement bottom electrode structure process is provided in which a patterned stack containing a MTJ pillar and a top electrode structure is fabricated and passivated on a sacrificial dielectric material plug that is embedded in a dielectric capping layer. The sacrificial dielectric material plug is then removed and replaced with a bottom electrode structure. The replacement bottom electrode structure process of the present application allows the MTJ patterning to be misalignment tolerate and fully eliminates the potential yield loss from the bottom electrode structure.

Abstract: I/O devices for gate-all-around transistors are provided. In one aspect, a method of forming an integrated circuit includes: forming at least first/second logic and I/O device stacks on a wafer having nanosheets of a channel material; forming an IL oxide on the nanosheets in the first and second device stacks; depositing a gate dielectric on the nanosheets in the first and second device stacks; selectively forming an oxygen containing layer on the second device stack; depositing a sacrificial layer onto the nanosheets and onto the oxygen containing layer; depositing a barrier layer onto the first and second device stacks; annealing the first and second device stacks to drive oxygen atoms from the oxygen containing layer into the IL oxide in the second device stack; removing the oxygen containing layer, sacrificial layer and barrier layer; and depositing a conformal gate conductor over the gate dielectric. An integrated circuit is also provided.

Abstract: I/O devices for gate-all-around transistors are provided. In one aspect, a method of forming an integrated circuit includes: forming at least first/second logic and I/O device stacks on a wafer having nanosheets of a channel material; forming an IL oxide on the nanosheets in the first and second device stacks; depositing a gate dielectric on the nanosheets in the first and second device stacks; selectively forming an oxygen containing layer on the second device stack; depositing a sacrificial layer onto the nanosheets and onto the oxygen containing layer; depositing a barrier layer onto the first and second device stacks; annealing the first and second device stacks to drive oxygen atoms from the oxygen containing layer into the IL oxide in the second device stack; removing the oxygen containing layer, sacrificial layer and barrier layer; and depositing a conformal gate conductor over the gate dielectric. An integrated circuit is also provided.

Abstract: A method of forming a nanosheet field effect transistor device is provided. The method includes forming a stack of alternating sacrificial layer segments and nanosheet layer segments on a substrate. The method further includes removing the sacrificial layer segments to form channels on opposite sides of the nanosheet layer segments. The method further includes depositing a gate dielectric layer around each of the nanosheet layer segments, and forming a work function material block on the gate dielectric layer to form a gate-all-around structure on the nanosheet layer segments. The method further includes forming a capping layer on the work function material block.

Abstract: A sacrificial inner dielectric spacer is formed on physically exposed sidewalls of each recessed semiconductor channel material nanosheet of a nanosheet material stack that further includes recessed sacrificial semiconductor material nanosheets that have an inner dielectric spacer formed on physically exposed sidewalls thereof. A local isolation region is then formed by selective epitaxial growth on a surface of a semiconductor substrate containing the nanosheet material stack. After forming the local isolation region, the sacrificial inner dielectric spacers are removed and a source/drain region is formed on the physically exposed surface of each recessed semiconductor channel material nanosheet. A portion of the source/drain structure is formed in a gap located between each neighboring pair of vertically spaced apart inner dielectric spacers.

Abstract: A stacked nanosheet semiconductor device and method of forming are provided. In an illustrative embodiment, a gate all around (GAA) stacked nanosheet field effect transistor (FET) includes a plurality of stacked semiconductor channel nanosheet layers and a dummy nanosheet layer formed above a top one of the stacked semiconductor channel nanosheet layers, the dummy nanosheet formed from a dielectric material. The GAA stacked nanosheet FET also includes a high dielectric constant (high-k) material formed around each of the plurality of stacked semiconductor channel nanosheet layers and around the dummy nanosheet layer and a first work function (WF) metal formed around the plurality of stacked semiconductor channel nanosheet layers and the dummy nanosheet layer.

Abstract: A semiconductor structure is provided that includes a pFET device including a first functional gate structure containing at least a p-type work function metal and present on physically exposed surfaces, and between, each Si channel material nanosheet of a first set of vertically stacked and suspended Si channel material nanosheets. The structure further includes an nFET device stacked vertically above the pFET device. The nFET device includes a second functional gate structure containing at least an n-type work function metal present on physically exposed surfaces, and between, each Si channel material nanosheet of a second set of vertically stacked and suspended Si channel material nanosheets.