Abstract: Embodiments are directed to a method of forming a stacked nanosheet and resulting structures having uniform low-k inner spacers. A nanosheet stack is formed opposite a major surface of a substrate. The nanosheet stack includes multiple nanosheets. Cavities are formed between adjacent ones of the multiple nanosheets. The cavities are filled with an oxide material and portions of the oxide material are nitridized to form inner spacers positioned between the adjacent ones of the multiple nanosheets.

Abstract: A semiconductor device includes a plurality of stacked gate regions spaced apart from each other on a substrate, a plurality of first epitaxial source/drain regions between the plurality of stacked gate regions, wherein the first epitaxial source/drain regions extend from sides of the plurality of stacked gate regions in a first doped region, a plurality of second epitaxial source/drain regions between the plurality of stacked gate regions and positioned over the first epitaxial source/drain regions, wherein the second epitaxial source/drain regions extend from sides of the plurality of stacked gate regions in a second doped region, and a contact region extending through a second epitaxial source/drain region of the plurality of second epitaxial source/drain regions to a first epitaxial source/drain region of the plurality of first epitaxial source/drain regions.

Abstract: A method of forming a vertical transport fin field effect transistor (VT FinFET), including, forming a plurality of vertical fins on a substrate, forming a sacrificial liner on at least two of the plurality of vertical fins, forming sidewall spacers on the vertical surfaces of the sacrificial liner, wherein the sidewall spacers are on opposite sides of the at least two of the plurality of vertical fins, and removing a portion of the sacrificial liner to form an l-shaped channel adjacent to each of the at least two of the plurality of vertical fins.

Abstract: Vertical transport field effect transistors (FETs) having improved device performance are provided. Notably, vertical transport FETs having a gradient threshold voltage are provided. The gradient threshold voltage is provided by introducing a threshold voltage modifying dopant into a physically exposed portion of a metal gate layer composed of an n-type workfunction TiN. The threshold voltage modifying dopant changes the threshold voltage of the original metal gate layer.

Abstract: A method of forming a vertical transport fin field effect transistor (VT FinFET), including, forming a plurality of vertical fins on a substrate, forming a sacrificial liner on at least two of the plurality of vertical fins, forming sidewall spacers on the vertical surfaces of the sacrificial liner, wherein the sidewall spacers are on opposite sides of the at least two of the plurality of vertical fins, and removing a portion of the sacrificial liner to form an 1-shaped channel adjacent to each of the at least two of the plurality of vertical fins.

Abstract: Provided is a nanosheet semiconductor device. In embodiments of the invention, the nanosheet semiconductor device includes a channel nanosheet formed over a substrate. The nanosheet semiconductor device includes a buffer layer formed between the substrate and the channel nanosheet. The buffer layer has a lower conductivity than the channel nanosheet.

Abstract: Provided is a nanosheet semiconductor device. In embodiments of the invention, the nanosheet semiconductor device includes a channel nanosheet formed over a substrate. The nanosheet semiconductor device includes a buffer layer formed between the substrate and the channel nanosheet. The buffer layer has a lower conductivity than the channel nanosheet.

Abstract: A semiconductor device includes a first SiGe fin formed on a substrate and including a first amount of Ge, and a second SiGe fin formed on a substrate and including a central portion including a second amount of Ge, and a surface portion comprising a third amount of Ge which is greater than the second amount.

Abstract: Embodiments are directed to a method of forming a stacked nanosheet and resulting structures having uniform low-k inner spacers. A nanosheet stack is formed opposite a major surface of a substrate. The nanosheet stack includes multiple nanosheets. Cavities are formed between adjacent ones of the multiple nanosheets. The cavities are filled with an oxide material and portions of the oxide material are nitridized to form inner spacers positioned between the adjacent ones of the multiple nanosheets.

Abstract: A method of forming a semiconductor device, includes forming first and second SiGe fins on a substrate, forming a protective layer on the first SiGe fin, forming a germanium-containing layer on the second SiGe fin and on the protective layer on the first SiGe fin, and performing an anneal to react the germanium-containing layer with a surface of the second SiGe fin.

Abstract: Methods of forming a semiconductor device include forming a layer of activating material on sidewalls of a stack of alternating layers of channel material and sacrificial material. The layer of activating material is annealed to cause the activating material to react with the sacrificial material and to form insulating spacers at ends of the layers of sacrificial material. The layer of activating material is etched away to expose ends of the layers of channel material. Source/drain regions are formed on the ends of the layers of channel material.

Abstract: A semiconductor devices and methods of forming the same include forming a layer of activating material on sidewalls of a stack of alternating layers of channel material and sacrificial material. The layer of activating material is annealed to cause the activating material to react with the sacrificial material and to form insulating spacers at ends of the layers of sacrificial material. The layer of activating material is etched away to expose ends of the layers of channel material. Source/drain regions are formed on the ends of the layers of channel material.

Abstract: A semiconductor devices and methods of forming the same include forming a layer of activating material on sidewalls of a stack of alternating layers of channel material and sacrificial material. The layer of activating material is annealed to cause the activating material to react with the sacrificial material and to form insulating spacers at ends of the layers of sacrificial material. The layer of activating material is etched away to expose ends of the layers of channel material. Source/drain regions are formed on the ends of the layers of channel material.

Abstract: A method of forming a semiconductor device, includes forming first and second SiGe fins on a substrate, forming a protective layer on the first SiGe fin, forming a germanium-containing layer on the second SiGe fin and on the protective layer on the first SiGe fin, and performing an anneal to react the germanium-containing layer with a surface of the second SiGe fin.

Abstract: Based on the present invention, superior compact spectrometers may be constructed and integrated into a cellular phone, or attached to a cellular phone. Such a cellular phone may be a PDA phone, which supplies electrical power to the said spectrometer, provided with data storage, signal processing capability, and real-time display. As a combined standalone system, it allows spectroscopic measurements to be fulfilled in real-time applications in field, and results can be sent out in wireless communication to a remote station or to another cellular phone user in order to share the measurement results right away. When the system is used with a laser to function as a Raman spectrometer system, it can fulfill many daily routine tasks encountered by ordinary civilians, for example, the blood glucose monitoring for diabetes patients at home in a non-invasive manner.

Abstract: Based on the present invention, superior compact spectrometers may be constructed and integrated into a cellular phone, or attached to a cellular phone. Such a cellular phone may be a PDA phone, which supplies electrical power to the said spectrometer, provided with data storage, signal processing capability, and real-time display. As a combined standalone system, it allows spectroscopic measurements to be fulfilled in real-time applications in field, and results can be sent out in wireless communication to a remote station or to another cellular phone user in order to share the measurement results right away. When the system is used with a laser to function as a Raman spectrometer system, it can fulfill many daily routine tasks encountered by ordinary civilians, for example, the blood glucose monitoring for diabetes patients at home in a non-invasive manner.

Abstract: Based on the present invention, superior compact spectrometers may be constructed and integrated into a cellular phone, or attached to a cellular phone. Such a cellular phone may be a PDA phone, which supplies electrical power to the said spectrometer, provided with data storage, signal processing capability, and real-time display. As a combined standalone system, it allows spectroscopic measurements to be fulfilled in real-time applications in field, and results can be sent out in wireless communication to a remote station or to another cellular phone user in order to share the measurement results right away. When the system is used with a laser to function as a Raman spectrometer system, it can fulfill many daily routine tasks encountered by ordinary civilians, for example, the blood glucose monitoring for diabetes patients at home in a non-invasive manner.

Abstract: A novel approach for chemical imaging is disclosed. In one embodiment, the disclosure relates to a system for producing a spatially accurate wavelength-resolved image of a sample from photons scattered from the sample, comprising an optical lens; a first optical fiber bundle of M fibers; a second optical fiber bundle of N fibers; an optical fiber switch; and a charge coupled device, wherein the image comprises plural sub-images, and wherein each sub-image is formed from photons scattered from a predetermined two spatial dimension portion of the sample, and wherein the scattered photons forming each sub-image have a predetermined wavelength different from a predetermined wavelength of scattered photons forming the other sub-images, and wherein the scattered photons for each sub-image are collected substantially simultaneously.

Abstract: Macroscopic and microscopic samples are imaged through a spectral filter operable into the short wave infrared, e.g., to approximately 3200 nm. The sample is illuminated for reflective, transmissive, fluorescent and/or Raman imaging by a laser or metal-halide arc beam. The filter has tunable birefringent retarders distributed rotationally and stacked in stages leading up to a selection polarizer. Image forming optics and CCD cameras collect the luminance of each pixel in the spatially resolved image, at multiple wavelengths to which the filter is tuned successively. The filter stages have comb shaped transmission characteristics. Two filter stages with distinctly different characteristics can be cascaded, one or both being tunable. The combined transmission characteristic has narrow passbands where the bandpass peaks of the stages coincide and wide free spectral range where the peaks do not coincide.

Abstract: Based on the present invention, superior compact spectrometers may be constructed and integrated into a cellular phone, or attached to a cellular phone. Such a cellular phone may be a PDA phone, which supplies electrical power to the said spectrometer, provided with data storage, signal processing capability, and real-time display. As a combined standalone system, it allows spectroscopic measurements to be fulfilled in real-time applications in field, and results can be sent out in wireless communication to a remote station or to another cellular phone user in order to share the measurement results right away. When the system is used with a laser to function as a Raman spectrometer system, it can fulfill many daily routine tasks encountered by ordinary civilians, for example, the blood glucose monitoring for diabetes patients at home in a non-invasive manner.