Abstract: An embodiment of the present invention relates to a cylindrical secondary battery in which a positive electrode terminal is adhered and fixed to a cylindrical can by an insulating sheet, and thus sealing between the cylindrical can and the positive electrode terminal can be facilitated due to an increased contact area.

Abstract: A cylindrical secondary battery includes: an electrode assembly including a first electrode plate and a second electrode plate; a cylindrical case having a disk-shaped top portion and a side portion extending from the top portion, the cylindrical case accommodating the electrode assembly; a cathode terminal extending through the top portion and insulated therefrom; a first current collector plate electrically connected to the first electrode plate and the cathode terminal; a second current collector plate electrically connected to the second electrode plate and the side portion of the cylindrical case; a cap plate coupled to the side portion and insulated therefrom; and an insulation tape between the top portion of the cylindrical case and the first current collector plate and covering the first current collector plate.

Abstract: A ship-collision prevention system and method for preventing a collision between ships at sea including a ship-collision avoidance guiding system using a time series graphic display, and guiding system displays, in a time series graph, depicting changes in relative distance according to time with respect to respective ships and obstacles on the basis of information provided from an electronic chart display and information system (ECDIS) and a radar system, wherein, whether other ships are on portside or starboard is displayed on the basis of radar information, and a notification through an alarm or the like if a distance to a specific ship has matched a predetermined threshold value or less, and effectively preventing a collision between ships at sea, and simultaneously, enabling a simulation for a crossing event and avoidance by inputting a random value.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: The present invention relates to a ship-collision prevention system and method for preventing a collision between a ship at sea and another ship, and according to the present invention, provided is a ship-collision avoidance guiding system using a time series graphic display, and in order to solve problems of a conventional electronic chart display and information system (ECDIS) and navigation systems using the same, which have a disadvantage of a complex and unintuitive screen display because of a simple enumeration of various pieces of information on a screen, the guiding system displays, in a time series graph, changes in relative distance according to time with respect to respective ships and obstacles on the basis of information provided from the ECDIS and a radar system, wherein, in a case of ships, whether the respective ships are on portside or starboard is displayed on the basis of radar information, and if a distance to a specific ship has a predetermined threshold value or less, the guiding system

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: Semiconductor devices are provided. The semiconductor device includes a bit line contact plug and a storage node contact plug electrically connected to an active region of a substrate. A bit line structure is disposed on the bit line contact plug to extend in a first direction. The bit line structure is disposed in a trench pattern that intrudes into a side of the storage node contact plug. Related methods and systems are also provided.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: Semiconductor devices are provided. The semiconductor device includes a bit line contact plug and a storage node contact plug electrically connected to an active region of a substrate. A bit line structure is disposed on the bit line contact plug to extend in a first direction. The bit line structure is disposed in a trench pattern that intrudes into a side of the storage node contact plug. Related methods and systems are also provided.