Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The first and second sensors may communicate the parameters using different and incompatible protocols. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: The present disclosure provides a system for fabricating a semiconductor device. The system includes a semiconductor fabrication tool. The semiconductor fabrication tool has an integrated inter interface that measures a first process parameter of the fabrication tool. The system also includes a wireless sensor. The wireless sensor is detachably coupled to the fabrication tool. The wireless sensor measures a second process parameter of the fabrication tool. The second process parameter is different from the first process parameter.

Abstract: A semiconductor processing station is provided. The semiconductor processing station includes a first platform, a second platform and a vacuum tunnel, wherein the first platform has a first load lock and a first plurality of chambers, and the second platform has a second load lock and a second plurality of chambers, and the vacuum tunnel connects the first and the second load locks.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: This disclosure relates to a magnet assembly including an epicyclic gearing system. The epicyclic gearing system including a central gear configured to be rotated, at least one peripheral gear connected to the central gear and configured to rotate and translate relative to the central gear, and an annulus surrounding the at least one peripheral gear and connected with the at least one peripheral gear. The magnet assembly further includes a magnet module connected with the epicyclic gearing system, the magnet module including a support connected with the at least one peripheral gear, the axis of rotation of the support being coaxial with the axis of rotation of the at least one peripheral gear connected with the support.

Abstract: An apparatus and method for detecting an intensity of radiation in a process chamber, such as an ultraviolet curing process chamber, is disclosed. An exemplary apparatus includes a process chamber having a radiation source therein, wherein the radiation source is configured to emit radiation within the process chamber; a radiation sensor attached to the process chamber; and an optical fiber coupled with the radiation source and the radiation sensor, wherein the optical fiber is configured to transmit a portion of the emitted radiation to the radiation sensor, and the radiation sensor is configured to detect an intensity of the portion of the emitted radiation via the optical fiber.

Abstract: An input/output (I/O) interface blocking device includes a fitting member. The fitting member includes a protruding portion, which includes a first sidewall and a second sidewall opposite to each other. The first sidewall is slanted in a direction allowing the first fitting member to be inserted into a space in an I/O interface receptacle. The second sidewall is configured to block the fitting member from being pulled out of the space in the I/O interface receptacle.

Abstract: A plasma processing apparatus used in semiconductor device manufacturing includes a process kit formed of insulating materials such as quartz and coated with a Y2O3 coating. The Y2O3 coating is a thin film formed using suitable CVD or PVD operations. The Y2O3 coating is resistant to degradation in fluorine etching chemistries commonly used to etch silicon in semiconductor manufacturing. The plasma processing apparatus may be used in etching, stripping and cleaning operations. Also provided in another embodiment is a plasma processing apparatus having a quartz process kit coated with a sapphire-like film.

Abstract: The present disclosure provides a system for fabricating a semiconductor device. The system includes a semiconductor fabrication tool. The semiconductor fabrication tool has an integrated inter interface that measures a first process parameter of the fabrication tool. The system also includes a wireless sensor. The wireless sensor is detachably coupled to the fabrication tool. The wireless sensor measures a second process parameter of the fabrication tool. The second process parameter is different from the first process parameter.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: A method includes providing a process chamber including a target, wherein the target has a first coefficient of thermal expansion (CTE); selecting a process kit including a surface layer having a second CTE close to the first CTE; and installing the process kit in the process chamber with the surface layer exposed to the process chamber. A ratio of a difference between the first CTE and the second CTE is less than about 35 percent.

Abstract: A replaceable electrostatic chuck sidewall shield is provided. The replaceable electrostatic chuck sidewall shield fills or partially fills an indentation located between a base member and a top member of an electrostatic chuck, such that the replaceable electrostatic chuck sidewall shield may protect an epoxy in the indentation or may replace the epoxy within the indentation. The replaceable electrostatic chuck sidewall shield may be fully contained with the indentation. The replaceable electrostatic chuck sidewall shield may also cover an epoxy in the indentation such that the replaceable electrostatic chuck sidewall shield protrudes beyond the indentation. In an alternate embodiment, the replaceable electrostatic chuck sidewall shield substantially covers the area in which a conductive pole is embedded in a bipolar electrostatic chuck.

Abstract: Heating coils used in an electric furnace used to process semiconductor wafers are monitored on a real time basis by sensing the AC current in a power line delivering electrical power to the furnace. The AC current is sensed by a coil positioned around and magnetically coupled with the power line. The sensed AC current induces an AC voltage in the coil which is converted by an electrical circuit into a DC voltage. The DC voltage is used to control a solid state relay that generates an alarm signal when the value of the DC voltage is less than a preselected value indicating that an open circuit is present in the heating coil.

Abstract: A method and an apparatus thereof for monitoring leakage of process cooling water (PCW) in a furnace. In the method, a bellows used to deliver the process cooling water is covered by a protecting tubing, so as to protect the bellows from being corroded by the process environment and to control the flow direction of the cooling water leaking from the bellows, thus avoiding the cooling water sprinkling. In addition, a tray is installed under the bellows to receive the leaking cooling water, so as to prevent the leaking cooling water from spilling on wafers. Besides, sensors are installed in the tray to send a signal while the cooling water falling on the tray.

Abstract: Heating coils used in an electric furnace used to process semiconductor wafers are monitored on a real time basis by sensing the AC current in a power line delivering electrical power to the furnace. The AC current is sensed by a coil positioned around and magnetically coupled with the power line. The sensed AC current induces an AC voltage in the coil which is converted by an electrical circuit into a DC voltage. The DC voltage is used to control a solid state relay that generates an alarm signal when the value of the DC voltage is less than a preselected value indicating that an open circuit is present in the heating coil.

Abstract: A method and an apparatus thereof for monitoring leakage of process cooling water (PCW) in a furnace. In the method, a bellows used to deliver the process cooling water is covered by a protecting tubing, so as to protect the bellows from being corroded by the process environment and to control the flow direction of the cooling water leaking from the bellows, thus avoiding the cooling water sprinkling. In addition, a tray is installed under the bellows to receive the leaking cooling water, so as to prevent the leaking cooling water from spilling on wafers. Besides, sensors are installed in the tray to send a signal while the cooling water falling on the tray.