Abstract: A semiconductor memory device includes: a semiconductor substrate having a first surface and a second surface opposing each other; a back-side insulating layer below the second surface of the semiconductor substrate; an external input/output conductive pattern below the back-side insulating layer; a circuit device including a gate electrode and a source/drain region, on the first surface of the semiconductor substrate; an internal input/output conductive pattern on the first surface of the semiconductor substrate, the internal input/output conductive pattern having at least a portion disposed on the same level as at least a portion of the gate electrode; a through-electrode structure penetrating through the semiconductor substrate and the back-side insulating layer and electrically connected to the internal input/output conductive pattern and the external input/output conductive pattern; and a memory cell array region disposed on a level higher than the circuit device, on the first surface of the semiconducto

Abstract: A method of performing autonomous driving based on platooning by a moving object includes setting a moving path, determining whether platooning is allowed, transmitting moving path information to a first intelligent transportation system infrastructure when the moving object of a plurality of moving objects approaches a preset range of the first intelligent transportation system infrastructure, receiving platooning information from the first intelligent transportation system infrastructure, and performing platooning based on the platooning information, wherein the first intelligent transportation system infrastructure groups ones of the moving objects capable of platooning from among the plurality of moving objects based on the moving path information received from each of the plurality of moving objects.

Abstract: An electronic device is provided. The electronic device includes a camera, a flexible display having a display region with a changeable size, and a processor configured to display an image obtained via the camera in a first region of the display region, display at least a part of control objects related to the camera in a second region different from the first region, in case that reduction of the display region is detected, compare a size of the reduced display region to a size of the image, and display the image in the reduced display region while maintaining an aspect ratio and the size of the image such that at least a part of the control objects related to the camera overlaps the image displayed in the reduced display region.

Abstract: An electronic device may include: a first housing; a second housing; a hinge structure; a display; and a sensor panel, wherein the sensor panel comprises: a support layer which comprises a polymer inclusive material and is in contact with an adhesive material arranged on at least one of a first surface of the first housing and a third surface of the second housing; a shielding layer arranged on the support layer; a first insulating layer arranged on the shielding layer; a first conductive pattern arranged on the first insulating layer; a second insulating layer arranged on the first conductive pattern; a second conductive pattern arranged on the second insulating layer; and a third insulating layer arranged on the second conductive pattern and facing one surface of the display, wherein the thickness of at least one of the first insulating layer and the third insulating layer is greater than the thickness of the second insulating layer.

Abstract: A semiconductor memory device includes: a semiconductor substrate having a first surface and a second surface opposing each other; a back-side insulating layer below the second surface of the semiconductor substrate; an external input/output conductive pattern below the back-side insulating layer; a circuit device including a gate electrode and a source/drain region, on the first surface of the semiconductor substrate; an internal input/output conductive pattern on the first surface of the semiconductor substrate, the internal input/output conductive pattern having at least a portion disposed on the same level as at least a portion of the gate electrode; a through-electrode structure penetrating through the semiconductor substrate and the back-side insulating layer and electrically connected to the internal input/output conductive pattern and the external input/output conductive pattern; and a memory cell array region disposed on a level higher than the circuit device, on the first surface of the semiconducto

Abstract: A method of controlling an electronic apparatus may include: acquiring a first audio signal may include an audio signal corresponding to a first audio source and an audio signal corresponding to a second audio source; acquiring a second audio signal by separating the audio signal corresponding to the first audio source from the first audio signal in a bandwidth below a preset frequency; acquiring a third audio signal by separating an audio signal in a bandwidth higher than or equal to the preset frequency from the first audio signal; acquiring a fourth audio signal by combining the second audio signal and the third audio signal; and for each of a plurality of frames constituting the fourth audio signal, acquiring a fifth audio signal by removing the component higher than or equal to the preset frequency.

Abstract: The present disclosure discloses a strain having resistance by neutralizing furfural, an inhibitor derived from lignocellulosic biomass, based on a technique using aldehyde dehydrogenase and a method of using the same. According to the present disclosure, furfural, an inhibitor derived from lignocellulosic biomass, is neutralized based on a technique using aldehyde dehydrogenase, so that a resistant strain overexpresses aldehyde dehydrogenase (EcAldH) in Yarrowia lipolytica, which has the ability to produce yeast oil, and has resistance to furfural, a biomass-derived inhibitor. Accordingly, even in the medium containing furfural, it can provide excellent strain growth and yeast oil production ability.

Abstract: A nonvolatile memory device and a data storage system including the same are provided. The nonvolatile memory device includes: a first structure including at least one first memory plane; and a second structure bonded to the first structure and including at least one second memory plane, wherein the number of the at least one first memory plane included in the first structure is different from the number of the at least one second memory plane included in the second structure.

Abstract: A side surface inspection device is provided for a cylindrical battery having a side surface defining first to fourth areas. The side surface inspection device includes a first light to emit light toward the side surface of the cylindrical battery; a plurality of mirrors having a first to fourth mirrors that each reflect light emitted from the first light to be incident on each of the first to fourth areas, respectively, of the cylindrical battery, and are configured to reflect light reflected by each of the first to fourth areas, respectively, of the cylindrical battery; and a camera to receive the light reflected by each of the plurality of mirrors and configured to form an image including images of the first to fourth areas of the cylindrical battery.

Abstract: A carbon-sulfur composite including a carbonized metal-organic framework (MOF); and a sulfur compound introduced to at least a part of an outside surface and an inside of the carbonized metal-organic framework, wherein the carbonized metal-organic framework has a specific surface area of 1000 m2/g to 1500 m2/g, and the carbonized metal-organic framework has a pore volume of 0.1 cc/g to 10 cc/g, and a method for preparing the same.

Abstract: A semiconductor device and electronic system, the device including a cell structure stacked on a peripheral circuit structure, wherein the cell structure includes a first interlayer dielectric layer and first metal pads exposed at the first interlayer dielectric layer and connected to gate electrode layers and channel regions, the peripheral circuit structure includes a second interlayer dielectric layer and second metal pads exposed at the second interlayer dielectric layer and connected to a transistor, the first metal pads include adjacent first and second sub-pads, the second metal pads include adjacent third and fourth sub-pads, the first and third sub-pads are coupled, and a width of the first sub-pad is greater than that of the third sub-pad, and the second sub-pad and the fourth sub-pad are coupled, and a width of the fourth sub-pad is greater than that of the second sub-pad.

Abstract: The present disclosure relates to an agricultural work vehicle, including: a vehicle body; and a cabin coupled to the vehicle body and provided with a driver's seat therein; wherein the cabin includes: a lower frame configured to form the lower part of the cabin; an upper frame configured to form the upper part of the cabin; a lower window selectively and detachably coupled to the rear of the lower frame and configured to be selectively opened and closed; and an upper window hinged to the rear of the upper frame on one side thereof and openably coupled to the upper frame.

Abstract: The present disclosure relates to an etchant composition for etching silicon and silicon germanium, and/or a preparation method of a pattern using the etchant composition. The etchant composition may include an oxidizing agent, a fluorine-based compound, a surfactant represented by Chemical Formula 1 or 2, and water. The etchant composition may include the surfactant in an amount of 5% to 40% by weight based on 100% by weight of the etchant composition.

Abstract: A display device includes light emitting elements in an active area and each light emitting element includes an anode, a light emitting layer, and a cathode; signal lines in a non-active area outside the active area; an encapsulation unit on the light emitting elements and the signal lines; touch electrodes on the encapsulation unit in the active area; first lines on the encapsulation unit in the non-active area and electrically connected to the touch electrodes; a second line outside the first lines; first auxiliary lines under the first lines and respectively electrically connected to a part of the first lines through first electrodes; and a second auxiliary line under the second line and electrically connected to the second line through a second electrode. The cathode is on an entire surface of the active area and extends to a shielding area of the non-active area.

Abstract: A method of transmitting video content by using an edge computing service (e.g., a multi-access edge computing (MEC) service) is provided. The method includes obtaining sensor information including orientation information and pupil position information from an electronic device connected to the edge data network, obtaining a first partial image including a user field-of-view image and an extra field-of-view image, the user field-of-view image corresponding to the orientation information, and the extra field-of-view image corresponding to the pupil position information, generating a first frame by encoding the first partial image, and transmitting the generated first frame to the electronic device.

Abstract: A nonvolatile memory device and a data storage system including the same are provided. The nonvolatile memory device includes: a first structure including at least one first memory plane; and a second structure bonded to the first structure and including at least one second memory plane, wherein the number of the at least one first memory plane included in the first structure is different from the number of the at least one second memory plane included in the second structure.

Abstract: A semiconductor memory device includes: a semiconductor substrate having a first surface and a second surface opposing each other; a back-side insulating layer below the second surface of the semiconductor substrate; an external input/output conductive pattern below the back-side insulating layer; a circuit device including a gate electrode and a source/drain region, on the first surface of the semiconductor substrate; an internal input/output conductive pattern on the first surface of the semiconductor substrate, the internal input/output conductive pattern having at least a portion disposed on the same level as at least a portion of the gate electrode; a through-electrode structure penetrating through the semiconductor substrate and the back-side insulating layer and electrically connected to the internal input/output conductive pattern and the external input/output conductive pattern; and a memory cell array region disposed on a level higher than the circuit device, on the first surface of the semiconducto

Abstract: The present disclosure relates to a method of generating high-purity hydrogen from waste plastic without producing carbon dioxide. In the method of generating hydrogen according to the embodiments of the present disclosure, reactants include hydroxide, and thus, the amount and purity of the generated hydrogen increases, a reaction temperature suitable for reaching an appropriate hydrogen production rate is lowered, and the amount of generated carbon dioxide is significantly decreased.

Abstract: A display device and a method for manufacturing the same are disclosed. The display device includes a substrate which includes a display area including an optical area and a normal area and a non-display area. The display device further includes a plurality of light emitting diodes disposed on the substrate in the display area. The display device further includes an encapsulation layer disposed to cover the plurality of light emitting diodes. The display device further includes a touch sensing layer which is disposed on the encapsulation layer and includes a touch line. The display device further includes a passivation layer disposed to cover the touch line. The display device further includes an organic layer which is disposed to cover the touch sensing layer and the passivation layer and is in contact with the encapsulation layer.

Abstract: A three-dimensional semiconductor memory device may include a peripheral structure and a cell structure on the peripheral structure. The cell structure may include a substrate having first and second surfaces, which are opposite to each other, a stack including gate electrodes, which are stacked on the first surface of the substrate, an insulating layer on the second surface of the substrate, a penetration contact plug penetrating the first surface of the substrate, a first gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and spaced apart from the penetration contact plug, a second gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and connected to the penetration contact plug, a first gapfill spacer between the first gapfill conductive pattern and the substrate, and a second gapfill spacer between the second gapfill conductive pattern and the substrate.