Abstract: A semiconductor device includes a substrate including a cell region and a connection region. The connection region includes a plurality of pad regions and a through electrode region. A horizontal conductive layer is on the substrate. A supporter is on the horizontal conductive layer. The supporter includes a first portion in the cell region, a second portion in the plurality of pad regions, and a third portion in the through electrode region. A connection conductive layer is between the first portion and the horizontal conductive layer. A connection mold layer is between the third portion and the horizontal conductive layer. A first buried insulation layer passing through the third portion, the connection mold layer, and the horizontal conductive layer is provided. A stacked structure is on the substrate. A through electrode passing through the first buried insulation layer is provided.

Abstract: Disclosed are a three-dimensional semiconductor memory device and an electronic system including the same. The device includes a substrate, a cell array structure provided on the substrate to include a plurality of stacked electrodes spaced apart from each other, an uppermost one of the electrodes being a first string selection line, a vertical channel structure provided to penetrate the cell array structure and connected to the substrate, a conductive pad provided in an upper portion of the vertical channel structure, a bit line on the cell array structure, a bit line contact electrically connecting the bit line to the conductive pad, and a cutting structure penetrating the first string selection line. The cutting structure penetrates a portion of the conductive pad. A bottom surface of the bit line contact includes first and second bottom surfaces in contact with the conductive pad and the cutting structure, respectively.

Abstract: The invention relates to a display device and method for controlling the same, the method mainly comprising: capturing a screen in which content is reproduced; extracting a first keyword from an image of the captured screen, generating reliability corresponding to the first keyword, when an input of selecting the first keyword is received from an external remote controller, transmitting the first keyword, feedback information and the reliability to an external server, receiving a second keyword, corrected reliability, and feedback information from the external server, and when an input of selecting the second keyword is received, displaying a screen corresponding to the second keyword.

Abstract: A carbon-sulfur composite including a carbonized metal-organic framework (MOF); and a sulfur compound introduced to at least a part of an outside surface and an inside of the carbonized metal-organic framework, wherein the carbonized metal-organic framework has a specific surface area of 1000 m2/g to 4000 m2/g, and the carbonized metal-organic framework has a pore volume of 0.1 cc/g to 10 cc/g, and a method for preparing the same.

Abstract: A method of operating a moving object on which a drone is mounted includes detecting, by the moving object, occurrence of an event; determining whether to use the drone, on the basis of the detected event; and determining an operation mode, among a first operation mode and a second operation mode, of the drone when the drone is used.

Abstract: The present invention relates to a duct module and a vehicle seat including a duct module. According to an exemplary embodiment of the present invention, the duct module includes a duct, an air intake module and a sterilization module. The duct may have a duct air passage formed therein and include a first rigid portion, a second rigid portion, and a flexible portion disposed between the first rigid portion and the second rigid portion. The air intake module may be connected to the first rigid portion of the duct and guide external air into the duct air passage. Further, the sterilization module may be disposed in the duct to emit sterilization light into the duct air passage. The duct air passage may be formed as an internal space of the first rigid portion, the second rigid portion and the flexible portion.

Abstract: A display apparatus includes a light source array in which a plurality of light sources emitting light by a local dimming are arranged, a color conversion layer comprising color conversion particles that convert the emitted light into light of a certain color, and configured to emit white light by using the converted light, a display panel configured to generate an image by using the white light, and a selective transmission member arranged between the light source array and the color conversion layer. The selective transmission member is configured to transmit the light to the color conversion layer, and avoid transmitting the light in the color conversion layer to the light source array.

Abstract: A method of transmitting video content by using an edge computing service (e.g., a multi-access edge computing (MEC) service) is provided. The method includes obtaining sensor information including orientation information and pupil position information from an electronic device connected to the edge data network, obtaining a first partial image including a user field-of-view image and an extra field-of-view image, the user field-of-view image corresponding to the orientation information, and the extra field-of-view image corresponding to the pupil position information, generating a first frame by encoding the first partial image, and transmitting the generated first frame to the electronic device.

Abstract: The present invention relates to a benzamide derivative, a preparation method therefor, and a pharmaceutical composition comprising same as an active ingredient for prevention or treatment of cancer. The benzamide derivative provided in an aspect of the present invention can be used for preventing or treating cancer by suppressing EGFR mutation, and exhibits a remarkable synergy effect on anticancer activity when administered in combination with an EGFR antagonist such as Cetuximab, thus finding advantageous uses as an anticancer agent.

Abstract: A semiconductor device includes a substrate including a cell region and a connection region. The connection region includes a plurality of pad regions and a through electrode region. A horizontal conductive layer is on the substrate. A supporter is on the horizontal conductive layer. The supporter includes a first portion in the cell region, a second portion in the plurality of pad regions, and a third portion in the through electrode region. A connection conductive layer is between the first portion and the horizontal conductive layer. A connection mold layer is between the third portion and the horizontal conductive layer. A first buried insulation layer passing through the third portion, the connection mold layer, and the horizontal conductive layer is provided. A stacked structure is on the substrate. A through electrode passing through the first buried insulation layer is provided.

Abstract: A refrigerator includes a cabinet, an evaporator, an evaporator cover module, and a cold air supply module configured to communicate with the evaporator cover module. The evaporator cover module includes a rear plate that has a planar shape and that defines the surface of the storage space, a first insulation member located at a rear surface of the rear plate, and a second insulation member spaced apart from the first insulation member and located at a front surface of the inner case. The first insulation member and the second insulation member define a heat-exchange space configured to accommodate the evaporator between the first insulation member and the second insulation member.

Abstract: A nonvolatile memory device and a data storage system including the same are provided. The nonvolatile memory device includes: a first structure including at least one first memory plane; and a second structure bonded to the first structure and including at least one second memory plane, wherein the number of the at least one first memory plane included in the first structure is different from the number of the at least one second memory plane included in the second structure.

Abstract: A semiconductor memory device includes: a semiconductor substrate having a first surface and a second surface opposing each other; a back-side insulating layer below the second surface of the semiconductor substrate; an external input/output conductive pattern below the back-side insulating layer; a circuit device including a gate electrode and a source/drain region, on the first surface of the semiconductor substrate; an internal input/output conductive pattern on the first surface of the semiconductor substrate, the internal input/output conductive pattern having at least a portion disposed on the same level as at least a portion of the gate electrode; a through-electrode structure penetrating through the semiconductor substrate and the back-side insulating layer and electrically connected to the internal input/output conductive pattern and the external input/output conductive pattern; and a memory cell array region disposed on a level higher than the circuit device, on the first surface of the semiconducto

Abstract: A semiconductor device and a data storage system including the same, the semiconductor device including: a first structure including a peripheral circuit; and a second structure, including: a pattern structure; an upper insulating layer; a stack structure between the first structure and the pattern structure and including first and second stack portions spaced apart from each other, the first and second stack portions respectively including horizontal conductive layers and interlayer insulating layers alternately stacked; separation structures penetrating through the stack structure; memory vertical structures penetrating through the first stack portion; and a contact structure penetrating through the second stack portion, the pattern structure, and the upper insulating layer, wherein the contact structure includes a lower contact plug penetrating through at least the second stack portion and an upper contact plug contacting the lower contact plug and extending upwardly to penetrate through the pattern struct

Abstract: A method for producing a transgenic plant having increased content of 20-hydroxyecdysone according to an embodiment of the present invention may use insect-derived gene A method according to an embodiment of the present invention includes transforming a plant cell with a recombinant vector including at least one of a gene encoding short-chain dehydrogenase/reductase (SDR) protein and a gene encoding C-14 hydroxylase protein, a gene encoding C-25 hydroxylase protein, a gene encoding C-22 hydroxylase protein, a gene encoding C-2 hydroxylase protein, and a gene encoding C-20 hydroxylase protein derived from insect, and regenerating a plant from the transformed plant cell.

Abstract: A semiconductor device and electronic system, the device including a cell structure stacked on a peripheral circuit structure, wherein the cell structure includes a first interlayer dielectric layer and first metal pads exposed at the first interlayer dielectric layer and connected to gate electrode layers and channel regions, the peripheral circuit structure includes a second interlayer dielectric layer and second metal pads exposed at the second interlayer dielectric layer and connected to a transistor, the first metal pads include adjacent first and second sub-pads, the second metal pads include adjacent third and fourth sub-pads, the first and third sub-pads are coupled, and a width of the first sub-pad is greater than that of the third sub-pad, and the second sub-pad and the fourth sub-pad are coupled, and a width of the fourth sub-pad is greater than that of the second sub-pad.

Abstract: A semiconductor device includes lower circuit patterns on a lower substrate; lower bonding patterns on the lower circuit patterns, the lower bonding patterns including a conductive material and being electrically connected to the lower circuit patterns; upper bonding patterns on and contacting the lower bonding patterns, and including a conductive material; a passive device on the upper bonding patterns, and including a conductive material and contacting one of the upper bonding patterns; a gate electrode structure on the passive device, and including gate electrodes spaced apart from each other in a first direction, each of which extends in a second direction, and extension lengths in the second direction of the gate electrodes increasing from a lowermost level toward an uppermost level in a stepwise manner; a channel extending through at least a portion of the gate electrode structure; and an upper substrate on the channel.

Abstract: A semiconductor device including a cell area including a first substrate, gate electrodes on the first substrate, a channel structure extending through the gate electrodes, cell contact plugs, a through contact plug, and first bonding pads, the first peripheral circuit area including second bonding pads on the first bonding pads; a second peripheral circuit area connected to the first peripheral circuit area; and a second substrate between the first peripheral circuit area and the second peripheral circuit area, the second substrate including a first surface in the first peripheral circuit area and a second surface in the second peripheral circuit area, wherein the second peripheral circuit area includes a device on the second surface, and a through electrode extending vertically through the second substrate and connected to the first peripheral circuit area.

Abstract: A memory device including a first structure; and a second structure on the first structure, wherein the first structure includes a first substrate; a peripheral circuit on the first substrate; a first insulating layer covering the first substrate and the peripheral circuit; and a first bonding pad on the first insulating layer, the second structure includes a second substrate; a memory cell array on a first surface of the second substrate; a second insulating layer covering the first surface of the second substrate and the memory cell array; a conductive pattern at least partially recessed from a second surface of the second substrate; and a second bonding pad on the second insulating layer, the first bonding pad is in contact with the second bonding pad, and the conductive pattern is spaced apart from the second insulating layer.

Abstract: Disclosed is a three-dimensional semiconductor memory device including a substrate including a cell array region and a connection region, a stack including first and second stacks sequentially stacked on the substrate, the stack having a staircase structure on the connection region, each of the first and second stacks including conductive patterns vertically stacked on the substrate, and contact plugs disposed on the connection region and respectively coupled to the conductive patterns. A bottom surface of each contact plug is located between top and bottom surfaces of a corresponding conductive pattern. In each stack, a recess depth of each contact plug varies monotonically in a stacking direction of the conductive patterns, when measured from a top surface of a corresponding conductive pattern. The contact plugs coupled to an uppermost conductive pattern of the first stack and a lowermost conductive pattern of the second stack have discrete recess depths.