Abstract: A method and apparatus for modifying a reference voltage between refreshes in a memory device are disclosed. The memory array may include a plurality of memory cells. The memory device may also include a sense amplifier. The sense amplifier may be configured to read data from the plurality of memory cells using a reference voltage. The memory device may also include a sense amplifier reference voltage modification circuit. The sense amplifier reference voltage modification circuit may be configured to detect a triggering event and modify the reference voltage in response to detecting a triggering event.

Abstract: A method and apparatus for refreshing a row of a memory device prior to a scheduled refresh. A memory array may include a plurality of memory cells. The memory array may be configured to be refreshed at a first refresh time interval. The memory device may also include an intermediate refresh circuit. The intermediate refresh circuit may be configured to detect a triggering event and request a refresh for a row of the memory array in response to detecting a triggering event.

Abstract: A method, system and computer program product are provided for implementing ECC (Error Correction Codes) redundancy using reconfigurable logic blocks in a computer system. When a fail is detected when reading from memory, it is determined if the incorrect data is in the data or the ECC component of the data. When incorrect data is found in the ECC component of the data, and an actionable threshold is not reached, a predetermined Reliability, Availability, and Serviceability (RAS) action is taken. When the actionable threshold is reached with incorrect data identified in the ECC component of the data, an analysis process is performed to determine if the ECC logic is faulty. When a fail in the ECC logic is detected, the identified ECC failed logic is replaced with a spare block of logic.

Abstract: An approach for saving power in a memory subsystem that uses memory access idle timer to enable low power mode and memory scrub operation within computing system has been provided. The computing system determines that a memory subsystem is switched out of low power operation mode due to a memory scrub operation. In addition, the computing system bypasses the low power operation mode of an idle timer of the memory subsystem such that the memory subsystem is returned to the low power operation mode upon completion of the memory scrub operation. The computing system further sets a scrub flag of the memory subsystem to a high state, and clears the scrub flag to a low state to track if the idle timer should be bypassed.

Abstract: An approach for saving power in a memory subsystem that uses memory access idle timer to enable low power mode and memory scrub operation within computing system has been provided. The computing system determines that a memory subsystem is switched out of low power operation mode due to a memory scrub operation. In addition, the computing system bypasses the low power operation mode of an idle timer of the memory subsystem such that the memory subsystem is returned to the low power operation mode upon completion of the memory scrub operation. The computing system further sets a scrub flag of the memory subsystem to a high state, and clears the scrub flag to a low state to track if the idle timer should be bypassed.

Abstract: This disclosure includes a method for securing a memory of an electronic system that includes initializing the memory, creating a security key, transmitting the security key to memory, storing the security key in the memory, transmitting the current security key and a a new security key to the memory by the memory controller. If the current security key transmitted is the same as the security key stored in memory, then access to the memory is enabled and the current security key in the memory is replaced with the new security key. If the current security key transmitted is not the same as the security key stored in the memory, then access to the memory is disabled.

Abstract: Exemplary embodiments of the present invention disclose a method and system for monitoring a first Error Correcting Code (ECC) device for failure and replacing the first ECC device with a second ECC device if the first ECC device begins to fail or fails. In a step, an exemplary embodiment detects that a specified number of correctable errors is exceeded. In another step, an exemplary embodiment detects the occurrence of an uncorrectable error. In another step, an exemplary embodiment performs a loopback test on an ECC device if a specified number of correctable errors is exceeded or if an uncorrectable error occurs. In another step, an exemplary embodiment replaces an ECC device that fails the loopback test with an ECC device that passes a loopback test.

Abstract: A method and structures are provided for implementing decoupling capacitors within a DRAM TSV stack. A DRAM is formed with a plurality of TSVs extending completely through the substrate and filled with a conducting material. A layer of glass is grown on both the top and bottom of the DRAM providing an insulator. A layer of metal is grown on each glass layer providing a conductor. The metal and glass layers are etched through to TSVs with a gap provided around the perimeter of via pads. A respective solder ball is formed on the TSVs to connect to another DRAM chip in the DRAM TSV stack. The metal layers are connected to at least one TSV by one respective solder ball and are connected to a voltage source and a dielectric is inserted between the metal layers in the DRAM TSV stack to complete the decoupling capacitor.

Abstract: An embodiment provided is a memory system with dynamic refreshing that includes a memory device with memory cells. The system also includes a refresh module in communication with the memory device and with a memory controller, the refresh module configured for receiving a refresh command from the memory controller and for refreshing a number of the memory cells in the memory device in response to receiving the refresh command. The number of memory cells refreshed in response to receiving the refresh command is responsive to at least one of a desired bandwidth characteristic and a desired latency characteristic.

Abstract: A method and structures are provided for implementing decoupling capacitors within a DRAM TSV stack. A DRAM is formed with a plurality of TSVs extending completely through the substrate and filled with a conducting material. A layer of glass is grown on both the top and bottom of the DRAM providing an insulator. A layer of metal is grown on each glass layer providing a conductor. The metal and glass layers are etched through to TSVs with a gap provided around the perimeter of via pads. A respective solder ball is formed on the TSVs to connect to another DRAM chip in the DRAM TSV stack. The metal layers are connected to at least one TSV by one respective solder ball and are connected to a voltage source and a dielectric is inserted between the metal layers in the DRAM TSV stack to complete the decoupling capacitor.

Abstract: A method, system and computer program product are provided for implementing command timing adjustments to alleviate Dynamic Random Access Memory (DRAM) failures in a computer system. A predefined DRAM failure is detected. Responsive to the detected failure, a set of timers is adjusted for controlling predetermined timings used to access the DRAM. Responsive to the failure being resolved by the adjusted set of timers, checking for a predetermined level of performance is performed.

Abstract: An approach is provided in which a subsystem cooling manager detects an increased workload indicator corresponding to a computer subsystem's forthcoming workload requirement. The forthcoming workload requirement corresponds to future computing resources required by the subsystem to support one or more software programs executing on the computer system. The subsystem cooling manager determines that the forthcoming workload requirement exceeds a utilization threshold and in turn, directs one or more cooling systems towards the corresponding subsystem according.

Abstract: A method and structures are provided for implementing decoupling capacitors within a DRAM TSV stack. A DRAM is formed with a plurality of TSVs extending completely through the substrate and filled with a conducting material. A layer of glass is grown on both the top and bottom of the DRAM providing an insulator. A layer of metal is grown on each glass layer providing a conductor. The metal and glass layers are etched through to TSVs with a gap provided around the perimeter of via pads. A respective solder ball is formed on the TSVs to connect to another DRAM chip in the DRAM TSV stack. The metal layers are connected to at least one TSV by one respective solder ball and are connected to a voltage source and a dielectric is inserted between the metal layers in the DRAM TSV stack to complete the decoupling capacitor.

Abstract: An embodiment is a method for operating a memory system, the method including storing initial calibration values for each of a first frequency and second frequency for a memory device, performing a periodic calibration to determine a calibration update value for operation of the memory device at the first frequency, combining the calibration update value with the initial calibration value for the first frequency to provide an updated calibration for operation of the memory device at an operating frequency of the first frequency and receiving a frequency change request at a memory controller associated with the memory device. The method further includes blocking traffic to the memory device, adjusting operating frequency to the second frequency while the memory device remains powered, combining the calibration update value with the initial calibration value for the second frequency for operation at the second frequency and enabling traffic to the memory device.

Abstract: An embodiment is a method includes writing a first set of memory device parameters to a first mode register in a memory device, wherein the first set of memory device parameters correspond to a first frequency, monitoring selected parameters for the memory system while the memory device operates at the first frequency and predicting a second frequency that the memory device will operate at subsequent to the first frequency, the predicting being based on the monitored selected parameters. The method further includes writing a second set of memory device parameters to second mode register in the memory device, receiving a frequency change request at a memory controller associated with the memory device, the frequency change request to operate at a new frequency and updating the first mode register with the second set of memory device parameters from the second mode register responsive to the new frequency being equal to the second frequency.

Abstract: A method, system and computer program product are provided for implementing hardware assisted Dynamic Random Access Memory (DRAM) repair in a computer system that supports ECC. A data register providing DRAM repair is selectively provided in one of the Dynamic Random Access Memory (DRAM), a memory controller, or a memory buffer coupled between the DRAM and the memory controller. The data register is configured to map to any address. Responsive to the configured address being detected, the reads to or the writes from the configured address are routed to the data register.

Abstract: A method, system and computer program product implement memory performance management and enhanced memory reliability of a computer system accounting for system thermal conditions. When a primary memory temperature reaches an initial temperature threshold, reads are suspended to the primary memory and reads are provided to a mirrored memory in a mirrored memory pair, and writes are provided to both the primary memory and the mirrored memory. If the primary memory temperature reaches a second temperature threshold, write operations to the primary memory are also stopped and the primary memory is turned off with DRAM power saving modes such as self timed refresh (STR), and the reads and writes are limited to the mirrored memory in the mirrored memory pair. When the primary memory temperature decreases to below the initial temperature threshold, coherency is recovered by writing a coherent copy from the mirrored memory to the primary memory.

Abstract: An embodiment provided is a memory system with dynamic refreshing that includes a memory device with memory cells. The system also includes a refresh module in communication with the memory device and with a memory controller, the refresh module configured for receiving a refresh command from the memory controller and for refreshing a number of the memory cells in the memory device in response to receiving the refresh command. The number of memory cells refreshed in response to receiving the refresh command is responsive to at least one of a desired bandwidth characteristic and a desired latency characteristic.