Abstract: A sensor component used to measure a magnetic field strength is disclosed. In one embodiment, the sensor component contains a plurality of leads and a sensor semiconductor chip, which measures the magnetic field strength. The sensor semiconductor chip has pads on its active upper side. These pads are connected electrically to the leads. The sensor component also contains a magnet, which is attached to the leads. The sensor semiconductor chip is arranged on an upper side of the magnet. The sensor component also has a first mold compound which shares a common boundary with the sensor semiconductor chip and surrounds the sensor semiconductor chip, the magnet and parts of the lead.

Abstract: A multilayer circuit carrier, electronic devices and panel, and a method for producing a multilayer circuit carrier include at least one semiconductor chip, at least one rewiring layer with a rewiring structure, and at least one insulation layer, which has passage structures.

Abstract: A semiconductor sensor device includes a sensor chip. The sensor chip includes a sensor region and contact areas on its upper side and is further arranged in a cavity housing. The cavity housing includes side walls, a housing bottom, a cavity, external contacts on the outside of the cavity and contact pads on an upper side of the housing bottom facing the cavity. The sensor chip is embedded into a rubber-elastic plastic composition within the cavity of the cavity housing such that the sensor region of the sensor chip faces the housing bottom and the contact areas of the sensor chip are electrically connected to the contact pads on the housing bottom via elastic flip-chip contacts.

Abstract: A panel for the production of electronic components is disclosed. The components have a substantially planar semiconductor chip with chip through-contacts which are provided with electrically conductive material. A rewiring region is subdivided into an insulating layer and also a first rewiring arranged therein, the rewiring projecting laterally beyond the side edge of the planar semiconductor chip. The rewiring has external contacts for electrical connections toward the outside. The panel provides a filling layer made of plastic, which encapsulates the semiconductor chip in a side region between the chip front side and the chip rear side and which is connected to the rewiring region.

Abstract: A micro-optical module includes a housing, at least one optoelectronic component, and an optoelectronic unit assigned thereto. The housing is partly embodied as an MID body, having a cavity and having a three-dimensional conductor structure in the cavity. The MID body includes an optical channel filled with a plastic waveguide.

Abstract: A semiconductor device for radio frequencies of more than 10 GHz having a semiconductor chip is disclosed. In one embodiment, the semiconductor chip, on its active top side, having a radio-frequency region and a low-frequency region and/or a region which is supplied with DC voltage. In one embodiment, the low-frequency region and/or the region which is supplied with DC voltage of the semiconductor chip is directly embedded in a plastic housing composition, the plastic housing composition is arranged such that it is spaced apart from the radio-frequency region on the active top side of the semiconductor chip.

Abstract: A semiconductor module includes a package, a plastic molding compound and contacts extending through the package from an underside of the package to an upper side of the package. The package includes least two layers of plastic, the first layer of plastic having external contacts and layer through contacts. A wiring structure carries the second layer of plastic, which surrounds semiconductor chips in a plastic molding compound, the contacts extending through the package being arranged in the edge regions of the semiconductor module.

Abstract: A chip carrier includes a first surface and a second surface that opposes the first surface. The chip carrier acts as a heat sink for semiconductor chips arranged on it. A first recess is provided in the first surface, and a second recess is provided in the second surface. First and second semiconductor chips are respectively received in the first and second recesses.

Abstract: A semiconductor device (7) has gold coatings (1 to 5) which are applied to metallic or ceramic components (6) of the semiconductor device (7). The gold coatings (1 to 4) have a multifunctional multilayer metal coating (8) with a minimal gold layer (9). The gold layer has a thickness dG where dG?0.5 ?m. Moreover, at least one metallic interlayer (10) is arranged between the gold layer (9) and the metallic or ceramic components (6).

Abstract: The invention relates to a semiconductor component having a plastic housing which encloses a rewiring structure which has flat conductors embedded in plastic. The flat conductors are formed either by a slotted metal sheet or by elongated contact connecting pads. Arranged on the contact connecting pads are flip-chip contacts of a semiconductor chip within the plastic housing, while external contact pads are connected to the flip-chip contacts via flat conductors or to the semiconductor chip via elongated contact connecting pads.

Abstract: The invention relates to an electronic device and a method for producing it having external area contacts and having a rewiring structure and also having a semiconductor chip, which has contact areas, the external area contacts being electrically connected to the contact areas at least by means of the rewiring structure, and the external area contacts and/or the rewiring structure having chemically or galvanically selectively deposited metal.

Abstract: A method for manufacturing a chip housing includes a first basis having a photolithograpically structurable layer on a main face, structured into a cover. A chip has the structure at a main face between first contact elements. A second photolithograpically structurable layer applied to the main face is structured forming a recess surrounded by a wall near the structure exposing the first contact elements. Then, the first basis and the chip are merged with the structure and the cover facing and aligned with each other, and the recess closed by the cover. Removing the first basis leads to an on-chip cavity. Afterwards, a second basis and the chip are merged with the first contact elements connected to the second basis via a conductive structure. Afterwards, the second basis is removed for exposing the conductive structure. The method is less subject to cost and size limitations of known housing technologies.

Abstract: A micro-optical module includes a housing, at least one optoelectronic component, and an optoelectronic unit assigned thereto. The housing is partly embodied as an MID body, having a cavity and having a three-dimensional conductor structure in the cavity. The MID body includes an optical channel filled with a plastic waveguide.

Abstract: The invention relates to a radiofrequency power semiconductor module having a cavity housing constructed from three modules, a 1st module, which has an upwardly and downwardly open housing frame with horizontally arranged flat conductors, a 2nd module, which has the chip island as a heat sink with at least one radiofrequency semiconductor components, the 2nd module forming the bottom of the cavity housing, and a 3rd module, which has the housing cover.

Abstract: A multilayer circuit carrier, electronic devices and panel, and a method for producing a multilayer circuit carrier include at least one semiconductor chip, at least one rewiring layer with a rewiring structure, and at least one insulation layer, which has passage structures.

Abstract: The present invention describes a rewiring plate for components with connection grids of between approx. 100 nm and 10 ?m, which rewiring plate includes a base body and passages with carbon nanotubes, the lower end of the passages opening out into contact connection surfaces, and the carbon nanotubes forming an electrically conductive connection from the contact connection surfaces to the front surface of the base body.

Abstract: The invention relates to a semiconductor component having a plastic housing which encloses a rewiring structure which has flat conductors embedded in plastic. The flat conductors are formed either by a slotted metal sheet or by elongated contact connecting pads. Arranged on the contact connecting pads are flip-chip contacts of a semiconductor chip within the plastic housing, while external contact pads are connected to the flip-chip contacts via flat conductors or to the semiconductor chip via elongated contact connecting pads.

Abstract: A method for manufacturing a housing for a chip having a micromechanical structure is primarily based on a first basis comprising a photolithograpically structurable layer on at least one partial region of a main face. The same is structured in order to obtain a cover for the micromechanical structure. Further, a chip comprising the micromechanical structure is provided, which is arranged at a main face of the chip between the first contact elements. A second photolithograpically structurable layer is applied to at least one partial region of the main face of the chip and is structured for generating a recess in the same surrounded by a wall in the region of the micromechanical structure and for exposing the first contact elements. After that, the first basis and the chip are merged such that the micromechanical structure and the cover are facing each other and are aligned with each other, so that the recess is closed by the cover. Removing the first basis leads to a chip comprising an on-chip cavity.