Abstract: A method for forming a bore for a cavity within a semiconductor layer stack. The method includes forming a first partial bore using a first laser ablation step starting at an outer surface of the stack so that the first partial bore extends with a first mean dimension and aligned in parallel with the outer surface, starting from the outer surface, and a bottom surface of the first partial bore lying between the outer surface and the cavity, and forming a second partial bore using a second laser ablation step started from the bottom surface of the first partial bore so that the second partial bore extends with a second mean dimension, aligned in parallel with the outer surface and is smaller than the first mean dimension, through the bottom surface into the cavity or an access channel opening at the cavity or connected to the cavity.

Abstract: A contact lens. The contact lens comprises an acceleration sensor for detecting a structure-borne sound produced by a wearer of the contact lens.

Abstract: A sensor system including a chip arrangement, the chip arrangement including a sensor and an acceleration sensor, and the sensor system including a processor circuit. The processor circuit is configured in such a way that: one or multiple temperature-dependent variables and/or properties of the sensor are ascertained, and an offset of a signal of the acceleration sensor induced by a temperature gradient is corrected with the aid of the one or the multiple ascertained temperature-dependent variables and/or properties of the sensor.

Abstract: A micromechanical component, in particular, an inertial sensor, including a seismic mass, a substrate, and a cap. The component includes a reference electrode, which is in a first electrode layer and is connected to the substrate, and a further reference electrode, which is in a second electrode layer and is connected to the cap. The seismic mass is deflectable on two sides, in a direction perpendicular to the major plane of extension of the reference electrode. The seismic mass includes a flexible limit stop in the direction of deflection towards the first electrode layer. The flexible limit stop is connected to the main part of the seismic mass using a spring element. The spring element is in an elastic layer, which is positioned between a layer of the main part of the seismic mass and the first electrode layer.

Abstract: A micromechanical component for a pressure and inertial sensor device. The component includes a substrate having an upper substrate surface; a diaphragm having an inner diaphragm side oriented towards the upper substrate surface and an outer diaphragm side pointing away from the upper substrate surface, the inner diaphragm side bordering on an inner volume, in which a reference pressure is enclosed, and the diaphragm being able to be warped using a pressure difference between a pressure prevailing on its outer diaphragm side and the reference pressure; and a seismic mass situated in the inner volume, a sensor electrode, which projects out on the inner diaphragm side and extends into the inner volume, being displaceable with respect to the substrate due to a warping of the diaphragm. A pressure and inertial sensor device, and a method of manufacturing a micromechanical component for a pressure and inertial sensor device, are also described.

Abstract: A membrane sensor. The membrane sensor includes: a pressure sensor configured to generate a first sensor signal depending on a deflection of a pressure-loadable membrane; an acceleration sensor configured to generate a second sensor signal depending on an acceleration acting on a MEMS functional structure; and an evaluation circuit configured to compensate for a dependence of the first sensor signal on an acceleration force, in particular weight force, acting on the membrane, based on the second sensor signal. The pressure sensor and the acceleration sensor are stacked one above the other in a z direction. A method for generating a compensated sensor signal using such a membrane sensor is also described.

Abstract: A micromechanical sensor device and a corresponding production method. The micromechanical sensor device has a substrate which has a front side and a rear side. Formed on the front side, at a lateral distance, are an inertial sensor region having an inertial structure for acquiring external accelerations and/or rotations, and a pressure sensor region having a diaphragm region for acquiring an external pressure. A micromechanical function layer by which the diaphragm region is formed in the pressure sensor region. A micromechanical function layer is applied on the micromechanical function layer, the inertial structure being formed out of the second and third micromechanical function layer. A cap device encloses a first predefined reference pressure in a first cavity in the inertial sensor region, and a second cavity is formed underneath the diaphragm region.

Abstract: A micromechanical system which includes a movably suspended mass. The micromechanical system includes a damping system, the damping system including a movably suspended damping structure, the damping structure being deflectable by applying a voltage. The damping structure is designed in such a way that a frequency response and/or a damping of the movably suspended mass are/is changeable with the aid of a deflection of the damping structure.

Abstract: A method producing a microelectromechanical component. A dielectric layer is structured on an upper side of a substrate forming a grating, and a blind hole is formed beneath the grating. A cover layer is arranged on the dielectric layer closing the blind hole. A layer sequence is arranged on the cover layer and above the blind hole. Functional structures are formed in the layer sequence and an access channel extending through the layer sequence to the blind hole is formed. A further substrate is connected to the substrate. The functional structures are enclosed in a cavity, connected to the blind hole, between the substrate and the further substrate. Another blind hole is formed on an underside of the substrate. The blind hole is opened in the region of the other blind hole. A cavity internal pressure is set, and the blind hole is closed.

Abstract: A micromechanical capacitive z-acceleration sensor. The sensor includes a substrate with a main extension plane and a layer sequence which is parallel to the extension plane, and includes a first polysilicon layer, a second polysilicon layer, and a third polysilicon layer, with a movable micromechanical structure having a seismic mass which can be deflected in a straight line in a first direction perpendicular to the extension plane. The movable micromechanical structure is formed in the second polysilicon layer and the third polysilicon layer. A measuring capacitance is formed between the seismic mass and a measuring electrode formed in the first polysilicon layer. A reference capacitance is formed between lower and upper reference electrodes, which are formed in the first and polysilicon layers, respectively. As viewed in the first direction, the movable micromechanical structure at least partially overlaps the upper reference electrode.

Abstract: A micromechanical sensor. The micromechanical sensor includes a MEMS substrate, on which a micromechanical structure including at least one sensor electrode is disposed in a cavity, and including a cap substrate, which is disposed over the micromechanical structure and closes the cavity. A capacitive electrode, which produces a measuring capacitance with an adjacent micromechanical structural element on the MEMS substrate for measuring a distance between the capacitive electrode and the micromechanical structural element, is disposed on an inner side of the cap substrate. A method for the signal correction of a sensor signal of such a micromechanical sensor is also described.

Abstract: A micromechanical component, in particular, an inertial sensor, including a seismic mass, a substrate, and a cap. The component includes a reference electrode, which is in a first electrode layer and is connected to the substrate, and a further reference electrode, which is in a second electrode layer and is connected to the cap. The seismic mass is deflectable on two sides, in a direction perpendicular to the major plane of extension of the reference electrode. The seismic mass includes a flexible limit stop in the direction of deflection towards the first electrode layer. The flexible limit stop is connected to the main part of the seismic mass using a spring element. The spring element is in an elastic layer, which is positioned between a layer of the main part of the seismic mass and the first electrode layer.

Abstract: A coupling of two electronic apparatuses for a wireless information exchange. The coupling is authenticated through the evaluation of motion patterns previously executed by the apparatuses.

Abstract: A micromechanical structure including a substrate, a moveable seismic mass, a detection structure, and a main spring. The seismic mass is connected to the substrate using the main spring. A first direction and a second direction perpendicular thereto define a main extension plane of the substrate. The detection structure detects a deflection of the seismic mass and includes first electrodes mounted at the seismic mass and second electrodes mounted at the substrate. The first electrodes and second electrodes have a two-dimensional extension in the first and second directions. The micromechanical structure has a graduated stop structure including a first spring stop, a second spring stop, and a fixed stop.

Abstract: A micromechanical sensor, including a micromechanical chip having a first micromechanical structure, a first evaluation chip, having a first application-specific integrated circuit, and a second evaluation chip having a second application-specific integrated circuit. The first evaluation chip and the micromechanical chip are situated in a stacked manner, the micromechanical chip being directly electrically conductively connected with the first evaluation chip and the first evaluation chip being directly electrically conductively connected with the second evaluation chip. The first application-specific integrated circuit primarily includes analog circuit elements and the second application-specific circuit primarily includes digital circuit elements.

Abstract: A micromechanical device including a substrate, a movable mass, and a stop spring structure, which includes a stop. The substrate includes a substrate surface in parallel to a main extension plane and the movable mass is situated movably above the substrate surface in relation to the substrate. The stop spring structure is connected to the movable mass. The stop is designed to strike against the substrate surface in the event of a deflection of the movable mass in a z direction, perpendicular to the main extension plane. The stop spring structure, at the location of the stop, includes a first spring constant, a second spring constant, in parallel to the main extension plane, and a third spring constant, in parallel to the main extension plane and perpendicular to the x direction. The first spring constant is greater than the second spring constant and/or is greater than the third spring constant.

Abstract: A manufacturing method for a micromechanical component. The method includes: providing an ASIC component including first front and rear sides, a strip conductor unit being provided at the first front side; providing a MEMS component including second front and rear sides, a micromechanical functional element situated in a cavity at the second front side; bonding the first front side onto the second front side; back-thinning the first rear side; forming vias starting from the back-thinned first rear side and from a redistribution unit on the first rear side, the vias electrically connecting the strip conductor unit to the redistribution unit; forming electrical contact elements on the redistribution unit; and back-thinning the second rear side. The back-thinning of the first and second rear side taking place so that a thickness of the stack made up of ASIC component and MEMS component is less than 300 micrometers.

Abstract: A micromirror arrangement having at least a first micromirror, a second micromirror, and a third micromirror. The second micromirror has a first component and a second component. The first component is arranged, in particular in a plan view, in a manner overlapping a first mirror surface of the first micromirror. The second component is arranged, in particular in the plan view, in a manner overlapping a third mirror surface of the third micromirror.

Abstract: A micromechanical component for a sensor device including a substrate having a substrate surface, at least one stator electrode situated on the substrate surface and/or on the at least one intermediate layer covering at least partially the substrate surface, which is formed in each case from a first semiconductor and/or metal layer, at least one adjustably situated actuator electrode, which is formed in each case from a second semiconductor and/or metal layer, and a diaphragm spanning the at least one stator electrode and the at least one actuator electrode, including a diaphragm exterior side directed away from the at least one stator electrode, which is formed from a third semiconductor and/or metal layer, a stiffening and/or protective structure protruding at the diaphragm exterior side being formed from a fourth semiconductor and/or metal layer.

Abstract: A micromechanical sensor system, in particular, an acceleration sensor, including a substrate having a main extension plane, the sensor system including a first mass and a second mass. The first and second masses are each designed to be at least partially movable in a vertical direction, perpendicular to the main extension plane of the substrate. The first mass includes a stop structure, wherein the stop structure has an overlap with the second mass in the vertical direction.