Abstract: A conductive through-plating for a substrate includes a metal component, a first conductive structure situated on or in the environment of a surface of the substrate, and a second conductive structure situated on or in the environment of a further surface of the substrate. A method for producing the through-plating includes, in a first step, at least partially applying above the surface a grid structure that includes a group of openings; in a second step following the first step, carrying out an etching producing a trench in the substrate and at least partially also underneath the group of openings; and, in a fifth step following the second step, carrying out a metallization situating a metal component at least partially in the trench such that the metal component is part of a seal sealing the trench in the area of the surface.

Abstract: A method for manufacturing a micromechanical component, including: providing a MEMS wafer and a cap wafer; forming micromechanical structures in the MEMS wafer for at least two sensors; hermetically sealing the MEMS wafer with the cap wafer; forming a first access hole in a first cavity of a first sensor; introducing a defined first pressure into the cavity of the first sensor via the first access hole; closing the first access hole; forming a second access hole in a second cavity of a second sensor; introducing a defined second pressure into the cavity of the second sensor via the second access hole; and closing the second access hole.

Abstract: A method for manufacturing a micromechanical sensor, including the steps: providing a MEMS wafer that includes a MEMS substrate, a defined number of etching trenches being formed in the MEMS substrate in a diaphragm area, the diaphragm area being formed in a first silicon layer that is situated at a defined distance from the MEMS substrate; providing a cap wafer; bonding the MEMS wafer to the cap wafer; and forming a media access point to the diaphragm area by grinding the MEMS substrate.

Abstract: A micromechanical sensor that is produced surface-micromechanically includes at least one mass element formed in a third functional layer that is non-perforated at least in certain portions. The sensor has a gap underneath the mass element that is formed by removal of a second functional layer and at least one oxide layer. The removal of the at least one oxide layer takes place by introducing a gaseous etching medium into a defined number of etching channels arranged substantially parallel to one another. The etching channels are configured to be connected to a vertical access channel in the third functional layer.

Abstract: A micromechanical sensor, including: a substrate; a movable mass element sensitive in three spatial directions; two x-lateral electrodes for detecting a lateral x-deflection of the movable mass element; two y-lateral electrodes for detecting a lateral y-deflection of the movable mass element; z-electrodes for detecting a z-deflection of the movable mass element; each lateral electrode being fastened on the substrate with the aid of a fastening element; the fastening elements of all electrodes being formed close to a connection element of the movable mass element to the substrate.

Abstract: A micromechanical structure for an acceleration sensor, including a seismic mass that is constituted definedly asymmetrically with reference to the rotational Z axis of the structure of the acceleration sensor, spring elements that are fastened on the seismic mass and on at least one fastening element, a rotational motion of the seismic mass being generatable by way of the spring elements substantially only upon an acceleration in a defined sensing direction within a plane constituted substantially orthogonally to the rotational Z axis.

Abstract: A method for manufacturing a micromechanical component, including: providing a MEMS wafer and a cap wafer; forming micromechanical structures in the MEMS wafer for at least two sensors; hermetically sealing the MEMS wafer with the cap wafer; forming a first access hole in a first cavity of a first sensor; introducing a defined first pressure into the cavity of the first sensor via the first access hole; closing the first access hole; forming a second access hole in a second cavity of a second sensor; introducing a defined second pressure into the cavity of the second sensor via the second access hole; and closing the second access hole.

Abstract: A micromechanical structure for an acceleration sensor includes a movable seismic mass including electrodes, the seismic mass being attached to a substrate with the aid of an attachment element; first fixed counter electrodes attached to a first carrier plate; and second fixed counter electrodes attached to a second carrier plate, where the counter electrodes, together with the electrodes, are situated nested in one another in a sensing plane of the micromechanical structure, and where the carrier plates are situated nested in one another in a plane below the sensing plane, each being attached to a central area of the substrate with the aid of an attachment element.

Abstract: A micromechanical pressure sensor device and a corresponding manufacturing method. The micromechanical pressure sensor device includes an ASIC wafer, a rewiring system, formed on the front side, which includes a plurality of strip conductor levels and insulating layers situated in between, a structured insulating layer formed above an uppermost strip conductor level, a micromechanical functional layer formed on the insulating layer and which includes a diaphragm area, which may be acted on by pressure, above a recess in the insulating layer as a first pressure detection electrode, and a second pressure detection electrode on the uppermost strip conductor level, formed in the recess at a distance from the diaphragm area and is electrically insulated from the diaphragm area. The diaphragm area is electrically connected to the uppermost strip conductor level by one or multiple first contact plugs which are led through the diaphragm area and through the insulating layer.

Abstract: Measures are described which contribute simply and reliably to the mechanical decoupling of a MEMS functional element from the structure of a MEMS element. The MEMS element includes at least one deflectable functional element, which is implemented in a layered structure on a MEMS substrate, so that a space exists between the layered structure and the MEMS substrate, at least in the area of the functional element. According to the invention, a stress decoupling structure is formed in the MEMS substrate in the form of a blind hole-like trench structure, which is open to the space between the layered structure and the MEMS substrate and extends into the MEMS substrate to only a predefined depth, so that the rear side of the MEMS substrate is closed, at least in the area of the trench structure.

Abstract: A micromechanical pressure sensor device and a corresponding manufacturing method. The micromechanical pressure sensor device includes an ASIC wafer having a front side and a rear side, and a rewiring system, formed on the front side of the ASIC wafer, which includes a plurality of stacked strip conductor levels and insulation layers. The pressure sensor device also includes a MEMS wafer having a front side and a rear side, a first micromechanical functional layer which is formed above the front side of the MEMS wafer, and a second micromechanical functional layer which is formed above the first micromechanical functional layer.

Abstract: A sensor unit including a first semiconductor component and a second semiconductor component, the first semiconductor component including a first substrate and a sensor structure. The second semiconductor component includes a second substrate, the first and second semiconductor components being connected to each other with the aid of a wafer connection, the sensor unit having a decoupling structure, which is configured in such a way that the sensor structure is decoupled thermally and/or mechanically from the second semiconductor component.

Abstract: A yaw rate sensor (10) includes a movable mass structure (12) and a drive component (13) which is suitable for setting the movable mass structure (12) in motion (14), and an analysis component (15) which is suitable for detecting a response (40) of the movable mass structure (12) to a yaw rate (?). A method for functional testing of a yaw rate sensor (10) includes the following steps: driving a movable mass structure (12), feeding a test signal (42) into a quadrature control loop (44) at a feed point (48) of the quadrature control loop (44), feeding back a deflection (40) of the movable mass structure (12), detecting a measure of the feedback of the movable mass structure (12), and reading out the response signal (47) from the quadrature control loop (44).

Abstract: A method for manufacturing a micromechanical component, including: providing a MEMS wafer; structuring the MEMS wafer proceeding from a surface of a second substrate layer of the MEMS wafer, at least one electrically conducting connection being formed between a first substrate layer and the second substrate layer of the MEMS wafer; providing a cap wafer; joining the MEMS wafer to the cap wafer; structuring the MEMS wafer proceeding from a surface of the first substrate layer of the MEMS wafer; providing an ASIC wafer; and joining the ASIC wafer to the joint of the MEMS wafer and the cap wafer.

Abstract: A micromechanical sensor that is produced surface-micromechanically includes at least one mass element formed in a third functional layer that is non-perforated at least in certain portions. The sensor has a gap underneath the mass element that is formed by removal of a second functional layer and at least one oxide layer. The removal of the at least one oxide layer takes place by introducing a gaseous etching medium into a defined number of etching channels arranged substantially parallel to one another. The etching channels are configured to be connected to a vertical access channel in the third functional layer.

Abstract: A micromechanical component includes a sensor chip and a cap chip connected to the sensor chip. A cavity is formed between the sensor chip and the cap chip. The sensor chip has a movable element situated in the cavity. The cap chip has a wiring level containing an electrically conductive electrode. The cap chip has a getter element situated in the cavity.

Abstract: A sensor unit including a first semiconductor component and a second semiconductor component, the first semiconductor component including a first substrate and a sensor structure. The second semiconductor component includes a second substrate, the first and second semiconductor components being connected to each other with the aid of a wafer connection, the sensor unit having a decoupling structure, which is configured in such a way that the sensor structure is decoupled thermally and/or mechanically from the second semiconductor component.

Abstract: A micromechanical pressure sensor device includes: an MEMS wafer having a front side and a rear side; a first micromechanical functional layer formed above the front side of the MEMS wafer; and a second micromechanical functional layer formed above the first micromechanical functional layer. A deflectable first pressure detection electrode is formed in one of the first and second micromechanical functional layers. A fixed second pressure detection electrode is formed spaced apart from and opposite the deflectable first pressure detection electrode. An elastically deflectable diaphragm area is formed above the front side of the MEMS wafer. An external pressure is applied to the diaphragm area via an access opening in the MEMS wafer, and the wafer is connected to the deflectable first pressure detection electrode via a plug-like joining area.

Abstract: A yaw-rate sensor having a substrate and a plurality of movable substructures that are mounted over a surface of the substrate, the movable substructures being coupled to a shared, in particular, central spring element, means being provided for exciting the movable substructures into a coupled oscillation in a plane that extends parallel to the surface of the substrate, the movable substructures having Coriolis elements, means being provided for detecting deflections of the Coriolis elements induced by a Coriolis force, a first Coriolis element being provided for detecting a yaw rate about a first axis, a second Coriolis element being provided for detecting a yaw rate about a second axis, the second axis being oriented perpendicularly to the first axis.

Abstract: A micromechanical sensor device includes: a MEMS element; an ASIC element; a bonding structure provided between the MEMS element and the ASIC element; a layer assemblage having insulating layers and functional layers disposed alternatingly on one another; a sensing element movable in a sensing direction provided in at least one of the functional layers; a spacing element for providing a defined spacing between the MEMS element and the ASIC element being provided by way of a further functional layer; an abutment element having the spacing element and a first bonding layer being disposed on the sensing element; and an insulating layer being disposed on the ASIC element in an abutment region of the abutment element.