Abstract: A lithographic apparatus includes a vessel that encloses a component with a test surface to be probed for contamination control; and an optical probe configured to transmit and receive an optical probing beam. The vessel includes a first optical port configured to transfer the optical probing beam towards the test surface, and a second optical port configured to receive a reflected optical probing beam. The optical probe includes a light source configured to provide the optical probing beam, a polarization conditioner configured to provide a predefined polarization state to the probing beam, and a spectral analyzer. The polarization conditioner is preset to provide a minimal transmission for a minimal transmission wavelength, and the spectral analyzer is arranged to detect a wavelength shift of the minimal transmission wavelength in response to a polarization change due to the presence of contamination.

Abstract: A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Abstract: A multilayer mirror is constructed and arranged to reflect radiation haying a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers selected from the group consisting of: Cr and Sc layers, Cr and C layers, C and B4C layers, U and B4C layers, Th and B4C layers, C and B9C layers, La and B9C layers, U and B9C layers, Th and B9C layers, La and B layers, C and B layers. U and B layers, and Th and B layers.

Abstract: A system for detecting at least one contamination species in an interior space of a lithographic apparatus, including: at least one monitoring surface configured to be in contact with the interior space, a thermal controller configured to control the temperature of the monitoring surface to at least one detection temperature, and at least one detector configured to detect condensation of the at least one contamination species onto the monitoring surface.

Abstract: A target material is configured to be used in a source constructed and arranged to generate a radiation beam having a wavelength in an extreme ultraviolet range. The target material includes a Gd-based composition configured to modify a melting temperature of Gd.

Abstract: A lithographic apparatus includes a projection system constructed and arranged to project a beam of radiation onto a target portion of a substrate, an internal sensor having a sensing surface, and a mini-reactor movable with respect to the sensor. The mini-reactor includes an inlet for a hydrogen containing gas, a hydrogen radical generator, and an outlet for a hydrogen radical containing gas. The mini-reactor is constructed and arranged to create a local mini-environment comprising hydrogen radicals to treat the sensing surface.

Abstract: A lithographic apparatus includes an illumination system configured to condition a beam of radiation, and a support structure configured to support a patterning device. The patterning device is configured to impart a pattern to the beam of radiation. The apparatus includes a patterning device cleaning system configured to provide an electrostatic force to contaminant particles that are on the patterning device and that are electrically charged by the beam of radiation, in order to remove the contaminant particles from the patterning device.

Abstract: An optical element includes a first layer that includes a first material, and is configured to be substantially reflective for radiation of a first wavelength and substantially transparent for radiation of a second wavelength. The optical element includes a second layer that includes a second material, and is configured to be substantially absorptive or transparent for the radiation of the second wavelength. The optical element includes a third layer that includes a third material between the first layer and the second layer, and is substantially transparent for the radiation of the second wavelength and configured to reduce reflection of the radiation of the second wavelength from a top surface of the second layer facing the first layer. The first layer is located upstream in the optical path of incoming radiation with respect to the second layer in order to improve spectral purity of the radiation of the first wavelength.

Abstract: A radiation system includes a target material supply configured to supply droplets of target material along a trajectory, and a laser system that includes an amplifier and optics. The optics are configured to establish a first beam path which passes through the amplifier and through a first location on the trajectory, and to establish a second beam path which passes through the amplifier and through a second location on the trajectory. The laser system is configured to generate a first pulse of laser radiation when photons emitted from the amplifier are reflected along the first beam path by a droplet of target material at the first location on the trajectory. The laser system is configured to generate a second pulse of laser radiation when photons emitted from the amplifier are reflected along the second beam path by the droplet of target material at the second location on the trajectory.

Abstract: A lithographic apparatus includes a magnet being contained in a protective enclosure, the protective enclosure being arranged to protect the magnet from contact with a H2-containing or H-atom containing gas. The enclosure may further contain a hydrogen getter, such as a magnet-surface modifying gas, or a non-hydrogen containing gas. A non-hydrogen containing gas flow may be provided or a non-hydrogen getter gas flow may be provided through at least part of the protective enclosure.

Abstract: A method for removal of deposition on a radiation collector of a lithographic apparatus includes providing a gas barrier to an end of a radiation collector, thereby providing a radiation collector enclosure volume; providing a gas to the enclosure volume, the gas selected from a halogen containing gas and a hydrogen containing gas; and removing at least part of the deposition from the radiation collector. A lithographic apparatus includes a radiation collector; a circumferential hull enclosing the radiation collector; a gas barrier at an end of the radiation collector, thereby providing a radiation collector enclosure volume. The radiation collector is enclosed by the circumferential hull and the gas barrier. An inlet provides a gas to the radiation collector enclosure volume and an outlet removes a gas from the radiation collector enclosure volume.

Abstract: A lithographic apparatus is disclosed that includes a projection system configured to project a patterned radiation beam onto a target portion of a substrate, a vacuum chamber through which the patterned beam of radiation is projected during use, and a purge system configured to provide a purge gas flow in the chamber.

Abstract: The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.

Abstract: An extreme ultra-violet lithographic apparatus for imaging a pattern onto a substrate includes a radiation system constructed and arranged to provide a beam of an extreme ultra-violet radiation, and an absorber arranged in the beam and constructed and arranged to absorb at least a portion of the radiation beam. The absorber has a volume configured to accommodate a flow of an absorbing gas. The flow is directed in a transverse direction with respect to the beam. The absorber includes a structure having an extreme ultra-violet radiation-transmissive beam entry area and an extreme ultra-violet radiation-transmissive beam exit area. The apparatus also includes a gas inlet actuator array configured to inject the gas into the volume and a gas outlet actuator array arranged to evacuate the gas from the volume.

Abstract: A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

Abstract: An assembly for detection of at least one of radiation flux and contamination on an optical component includes a detector configured to receive at least one of the radiation flux and contamination, and when the assembly is in use, to generate a detector signal correlated to at least one of the radiation flux and contamination on the component. A meter is configured to measure the detector signal. The detector includes at least one wire.

Abstract: An optical system for radiation in the EUV wavelength range, in particular a projection exposure apparatus, having at least one vacuum vessel, including: at least one EUV-reflective optical element arranged in an optical path, and a holder which includes at least one sample element, the sample element having an optical surface which is exposed to incident EUV-radiation outside of the optical path, the sample element being sensitive to chemical alterations under influence of the incident EUV-radiation which also affect the optical element. The optical system further includes at least one detection unit for online detection of the contamination status of the sample element during exposure of the sample element to the incident EUV-radiation.

Abstract: Embodiments of the invention relate to a system for contactless cleaning of an object surface, a lithographic apparatus including the system, and a method of manufacturing a device. The system may include a He plasma source contained in a chamber and a control unit constructed to modify plasma parameters in use, such as the electron energy distribution of the plasma for causing an increase in formation of He metastables without modifying operational parameters of the plasma source. The control unit may include an electrical biasing unit constructed to apply a positive bias voltage to the object, for attracting free electrons from the plasma. The system may include a supplementary gas source, which may be either pre-mixed with He or be supplied from a further gas source. The supplementary gas may be selected based on a pre-knowledge on a type of particles to be expected on the surface of the object.

Abstract: A lithographic apparatus includes a radiation source configured to emit radiation to form a radiation beam, the radiation being of a type which can create plasma in a low pressure environment in the apparatus, and an optical component configured to condition the radiation beam, impart the conditioned radiation beam with a pattern in its cross-section to form a patterned radiation beam, project the patterned radiation beam onto a target portion of a substrate, and/or to detect radiation. The optical component is provided with a plasma quenching structure, the plasma quenching structure being configured to provide electron-ion recombination in, on and/or near the optical component.

Abstract: An apparatus and method for measuring an outgassing in a EUV lithography apparatus. The method includes activating a surface within the EUV lithography apparatus, inducing the outgassing, analyzing a residual gas. Defining a maximum partial pressure, recording a mass spectrum of the residual gas, converting the highest-intensity peaks of the mass spectrum into sub-partial pressures, summing the sub-partial pressures, and comparing the summed result with the defined maximum partial pressure. An EUV lithography apparatus includes a residual gas analyzer and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source. A measurement setup for measuring the outgassing from components by analyzing the residual gas includes a residual gas analyzer, a vacuum chamber, and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source.