Patents by Inventor John A. Foster

John A. Foster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for providing text information in an application framework for a wireless device
    Patent number: 8595687
    Abstract: Methods and systems for processing text input within a man-machine interface (MMI) application framework are provided and may comprise creating at least one text editor by an active application and generating at least one text edit view by the text editor. Text input, for example, predictive input, multi-tap input and/or numeric input, which may be associated with the text edit view, may be received by the text editor. At least one text editor feature may be associated with at least one text editor and the text editor feature may comprise a maximum string length characteristic and/or a cursor characteristic. The text editor feature may be customized for each text editor view and the text input may be buffered by a buffer within the MMI application framework.
    Type: Grant
    Filed: August 25, 2004
    Date of Patent: November 26, 2013
    Assignee: Broadcom Corporation
    Inventors: Lori Yoshida, Derek John Foster
  • Method for etching gate stack
    Patent number: 8575016
    Abstract: A method for etching a metal gate stack is provided. The method includes forming a gate stack on a substrate, where the gate stack includes a metal gate. A wet etch process is performed on the gate stack. The wet etch process includes submersing the substrate with the gate stack in an aqueous solution composed of a wet etchant and an oxidizer, removing the substrate from the solution and rinsing the solution from the etched gate stack.
    Type: Grant
    Filed: October 19, 2012
    Date of Patent: November 5, 2013
    Assignee: Intermolecular, Inc.
    Inventors: John Foster, Kim Van Berkel
  • Process to remove Ni and Pt residues for NiPtSi application using Chlorine gas
    Publication number: 20130267091
    Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.
    Type: Application
    Filed: June 6, 2013
    Publication date: October 10, 2013
    Inventors: Anh Duong, John Foster, Olov Karlsson, James Mavrinac, Usha Raghuram
  • Process to remove Ni and Pt residues for NiPtSi applications
    Patent number: 8513117
    Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues.
    Type: Grant
    Filed: November 15, 2011
    Date of Patent: August 20, 2013
    Assignees: Intermolecular, Inc.
    Inventors: Anh Duong, Sean Barstow, Clemens Fitz, John Foster, Olov Karlsson, Bei Li, James Mavrinac
  • METHODS FOR PFET FABRICATION USING APM SOLUTIONS
    Publication number: 20130203245
    Abstract: A method for fabricating an integrated circuit from a semiconductor substrate having formed thereon over a first portion of the semiconductor substrate a hard mask layer and having formed thereon over a second portion of the semiconductor substrate an oxide layer. The first portion and the second portion are electrically isolated by a shallow trench isolation feature. The method includes removing the oxide layer from over the second portion and recessing the surface region of the second portion by applying an ammonia-hydrogen peroxide-water (APM) solution to form a recessed surface region. The APM solution is provided in a concentration of ammonium to hydrogen peroxide ranging from about 1:1 to about 1:0.001 and in a concentration of ammonium to water ranging from about 1:1 to about 1:20. The method further includes epitaxially growing a silicon-germanium (SiGe) layer on the recessed surface region.
    Type: Application
    Filed: August 1, 2012
    Publication date: August 8, 2013
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Joanna WASYLUK, Stephan KRONHOLZ, Berthold Reimer, Sven Metzger, Gregory Nowling, John Foster, Paul Besser
  • Process to remove Ni and Pt residues for NiPtSi applications using chlorine gas
    Patent number: 8466058
    Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: June 18, 2013
    Assignee: Intermolecular, Inc.
    Inventors: Anh Duong, John Foster, Olov Karlsson, James Mavrinac, Usha Raghuram
  • PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS
    Publication number: 20130122671
    Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues.
    Type: Application
    Filed: November 15, 2011
    Publication date: May 16, 2013
    Applicants: Globalfoundries, Intermolecular, Inc.
    Inventors: Anh Duong, Sean Barstow, Clemens Fitz, John Foster, Olov Karlsson, Bei Li, James Mavrinac
  • PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS USING CHLORINE GAS
    Publication number: 20130122670
    Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.
    Type: Application
    Filed: November 14, 2011
    Publication date: May 16, 2013
    Applicant: Intermolecular, Inc.
    Inventors: Anh Duong, John Foster, Olov Karlsson, James Mavrinac, Usha Raghuram
  • Controllable Undercut Etching of Tin Metal Gate Using DSP+
    Publication number: 20130099330
    Abstract: A wet process utilizing a dilute acid oxidant solution, for example, a dilute sulfuric acid with hydrogen peroxide is used in the fabrication of a metal gate electrode of a semiconductor device, offering high etch selectivity and high controllability to achieve a desired profile for the metal gate electrode. In some embodiments, the dilute acid oxidant solution is a dilute sulfuric peroxide solution, comprising at least 50% or 80% by weight of water, less than 30% or 15% by weight of sulfuric acid, and less than 20% or 20% of hydrogen peroxide with optionally less than 100 ppm or 30 ppm ozone. In some embodiments, the dilute sulfuric peroxide solution further comprises less than 100 ppm of hydrofluoric acid. The dilute acid oxidant solution can be used effectively to clean the metal gate electrode or to form an undercut on a metal gate layer of the metal gate electrode.
    Type: Application
    Filed: October 25, 2011
    Publication date: April 25, 2013
    Applicant: INTERMOLECULAR, INC.
    Inventor: John Foster
  • METHOD AND AN ASSEMBLY FOR ELECTROLYTICALLY DEPOSITING A COATING
    Publication number: 20130048503
    Abstract: A method for repairing a blade forming a cathode and having a surface to be coated defining a critical area, utilizing an anode, an electrolyte bath including insoluble particles, and a mounting on which the blade is mounted in a working position relative to a reference wall. The mounting is placed in the bath, and the particles and the metal of the anode are co-deposited to form the coating on the surface to be coated. The anode is typically placed facing the critical area and the mounting includes a mechanism for monitoring current lines to obtain a coating with a relatively constant, predetermined thickness for the critical area, that gradually falls to a value of substantially zero along edges of the coating.
    Type: Application
    Filed: December 28, 2010
    Publication date: February 28, 2013
    Applicants: SNECMA, PRAXAIR SURFACE TECHNOLOGIES INC.
    Inventors: Justine Menuey, Frederic Braillard, John Foster, Stephen Owens, Alan Taylor, Martin Chatterney
  • Late blight resistance genes and methods
    Patent number: 8367893
    Abstract: This invention provides novel gene sequences, compositions and methods for enhancing the resistance in crops, in particular but not limited to, potato, to late blight caused by the oomycete pathogen Phytophthora infestans.
    Type: Grant
    Filed: July 18, 2008
    Date of Patent: February 5, 2013
    Assignee: Plant Bioscience Limited
    Inventors: Jonathan Jones, Simon John Foster, Zhaohui Chu, Tae-Ho Park, Edwin Andries Gerard Van Der Vossen, Mathieu Andre Pel, Richard Gerardus Franciscus Visser
  • METHOD FOR ETCHING GATE STACK
    Publication number: 20120295431
    Abstract: A method for etching a metal gate stack is provided. The method includes forming a gate stack on a substrate, where the gate stack includes a metal gate. A wet etch process is performed on the gate stack. The wet etch process includes submersing the substrate with the gate stack in an aqueous solution composed of a wet etchant and an oxidizer, removing the substrate from the solution and rinsing the solution from the etched gate stack.
    Type: Application
    Filed: May 20, 2011
    Publication date: November 22, 2012
    Applicant: INTERMOLECULAR, INC.
    Inventors: John Foster, Kim Van Berkel
  • Method for etching gate stack
    Patent number: 8314022
    Abstract: A method for etching a metal gate stack is provided. The method includes forming a gate stack on a substrate, where the gate stack includes a metal gate. A wet etch process is performed on the gate stack. The wet etch process includes submersing the substrate with the gate stack in an aqueous solution composed of a wet etchant and an oxidizer, removing the substrate from the solution and rinsing the solution from the etched gate stack.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: November 20, 2012
    Assignee: Intermolecular, Inc.
    Inventors: John Foster, Kim Van Berkel
  • Process for gas sweetening
    Patent number: 8298505
    Abstract: A process for treating a gas stream comprising hydrogen sulphide, the process comprising the steps of: (i) mixing a first gas stream comprising hydrogen sulphide with a second stream comprising sulphur dioxide to produce a combined stream, whereby elemental sulphur is produced by a reaction between the hydrogen sulphide and the sulphur dioxide; (ii) removing elemental sulphur, and optionally water, from the combined stream; and (iii) oxidizing at least some of the elemental sulphur to form sulphur dioxide for use in the second stream, wherein, the reaction is conducted at a temperature of from 15 to 155° C. and a pressure of at least 3 MPa.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: October 30, 2012
    Assignee: Foster Wheeler Energy Limited
    Inventors: Suling Zhai, John Foster, Stephen Ward, Malcolm Harrison
  • Amplifier circuit for a current transformer
    Patent number: 8212570
    Abstract: The invention is a simple amplifier circuit for a current transformer to measure very small AC currents, as required for ground fault detection. The circuit presents a very low impedance to the current transformer output and provides high amplification of the current transformer signal. Concurrently and with no additional components, the inventive circuit supplies a bias current to the current transformer to improve its performance and provides output signals which can be used to detect disconnection of the current transformer or a short circuit between either of the current transformer terminals and ground.
    Type: Grant
    Filed: May 8, 2009
    Date of Patent: July 3, 2012
    Assignee: Welding Technology Corporation
    Inventor: John Foster Farrow
  • XANTHAN GUM AND SWELLABLE PARTICULATE CONTAINING COMPOSITION AND USES THEREOF
    Publication number: 20120115964
    Abstract: This invention relates to a composition comprising at least about 0.2% w/w xanthan gum and at least about 6% w/w of a swellable particulate, and to uses thereof.
    Type: Application
    Filed: April 20, 2010
    Publication date: May 10, 2012
    Applicant: THE UNIVERSITY OF NOTTINGHAM
    Inventors: Timothy John Foster, John Richard Mitchell, Mitaben Dhirajlal Lad
  • Methods to detect hazardous conditions in a safety ground circuit in the presence of ground loop currents and electrical noise
    Patent number: 8174399
    Abstract: The invention comprises a set of methods to detect the resistance of a connection to safety ground and to detect the presence of voltage hazardous to people in systems where an unknown amount of current intermittently flows in the safety ground circuit. Samples of voltage between two points in the safety ground circuit are taken repeatedly. When the voltage caused by the unknown currents in the safety ground circuit is below a preset threshold, a known current is applied and another voltage sample is taken to detect the electrical resistance of the safety ground circuit. If an excessive resistance or voltage is detected, one or more outputs are activated or deactivated to indicate the problem and remove power from the system. The invention requires no current sensor for its operation.
    Type: Grant
    Filed: May 8, 2009
    Date of Patent: May 8, 2012
    Assignee: Welding Technology Corporation
    Inventor: John Foster Farrow
  • Frozen aerated products
    Patent number: 8124164
    Abstract: A frozen aerated product having an overrun of between about 10% and about 250% and a pH, when melted, in the range about 3.5 to about 5.2, comprises water, 0 to about 20 w/w % fat, about 0.25 to about 20 w/w % milk solids not fat, about 0.05 to about 1.5 w/w % soluble dietary fibre and about 0.1 to about 5 w/w % of insoluble dietary fibre, about 0.1 to about 35 w/w % sweetener but no additional stabilisers or emulsifiers as herein defined. The soluble and insoluble dietary fibre may be derived from fruits or vegetables for example from one or more fruit purees, one or more vegetable purees or mixtures thereof.
    Type: Grant
    Filed: October 4, 2007
    Date of Patent: February 28, 2012
    Assignee: Good Humor-Breyers Ice Cream, division of Conopco, Inc.
    Inventors: Beata Bartkowska, Timothy John Foster, Sarah Jane Gray, Sudarshi Tanuja Regismond, Jeffrey Underdown
  • EQUIPMENT MOUNTING APPARATUS AND METHOD
    Publication number: 20120001033
    Abstract: An apparatus and method for mounting electronic equipment onto a pole are disclosed.
    Type: Application
    Filed: December 22, 2010
    Publication date: January 5, 2012
    Inventors: Gary P. Wilde, Bryan Billingsley, Matthew Sovic, Dean Bond, John Foster, Aaron Desmond, Joshua Wilde
  • PROCESS FOR GAS SWEETENING
    Publication number: 20110300059
    Abstract: A process for treating a gas stream comprising hydrogen sulphide, the process comprising the steps of: (i) mixing a first gas stream comprising hydrogen sulphide with a second stream comprising sulphur dioxide to produce a combined stream, whereby elemental sulphur is produced by a reaction between the hydrogen sulphide and the sulphur dioxide; (ii) removing elemental sulphur, and optionally water, from the combined stream; and (iii) oxidising at least some of the elemental sulphur to form sulphur dioxide for use in the second stream, wherein, the reaction is conducted at a temperature of from 15 to 155° C. and a pressure of at least 3 MPa.
    Type: Application
    Filed: December 8, 2009
    Publication date: December 8, 2011
    Applicant: FOSTER WHEELER ENERGY LIMITED
    Inventors: Suling Zhai, John Foster, Stephen Ward, Malcolm Harrison