Abstract: A lamp includes an optically transmissive enclosure for emitting an emitted light and a base connected to the enclosure. At least one first LED filament and at least one second LED filament are located in the enclosure and are operable to emit light when energized through an electrical path from the base. The first LED filament emits light having a first correlated color temperature (CCT) and the second LED filament emits light having a second CCT that are combined to generate the emitted light. A controller operates to change the CCT of the emitted light when the lamp is dimmed.

Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

Abstract: A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent materials that down-convert respective first through fourth portions of the radiation emitted by the LED to radiation having respective first through fourth peak wavelengths. The first peak wavelength is in the green color range and the second through fourth peak wavelengths are in the red color range. The second and third luminescent materials each emit light having a full-width half maximum bandwidth of at least 70 nanometers, while the fourth luminescent material emits light having a full-width half maximum bandwidth of less than 60 nanometers. Embodiments that only include three luminescent materials are also disclosed.

Abstract: Solid state light fixtures include a plurality of blue-shifted-yellow/green light emitting diode (“LED”) packages and a plurality of blue-shifted-red LED packages, where the solid state light fixture emits light having a correlated color temperature of between 1800 K and 5500 K, a CRI value of between 80 and 99, a CRI R9 value of between 15 and 75, and a Qg value of between 90 and 110 when the blue-shifted-yellow/green LED packages and the blue-shifted-red LED packages are operating at steady-state operating temperatures of at least 80° C.

Abstract: A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent materials that down-convert respective first through fourth portions of the radiation emitted by the LED to radiation having respective first through fourth peak wavelengths. The first peak wavelength is in the green color range and the second through fourth peak wavelengths are in the red color range. The second and third luminescent materials each emit light having a full-width half maximum bandwidth of at least 70 nanometers, while the fourth luminescent material emits light having a full-width half maximum bandwidth of less than 60 nanometers. Embodiments that only include three luminescent materials are also disclosed.

Abstract: A small form factor LED lighting system provides for color-controlled dimming. Embodiments of the invention use one or more small-footprint LED(s) that can emit light of different correlated color temperatures (CCTs, colors or spectral outputs). The CCT of the fixture or bulb can change when dimmed by disproportionate adjustment of the driving power for each color. The small size and footprint of the LEDs enables use in decorative LED lamps, such as those designed to replace candelabra style incandescent bulbs. Various options can be used to tune the performance and lighting characteristics of a lamp according to embodiments of the invention, such as the use of differing LED device package optics, the use of reflective materials in and/or around LED device packages, and the use of a secondary optic to produce an omnidirectional light pattern.

Abstract: LED packages are disclosed that are compact and efficiently emit light, and can comprise encapsulants with curved and planar surfaces. The packages can comprise a submount with a one or a plurality of LEDs, and in those with a plurality of LEDs each of the LEDs can emit the same or different wavelengths of light than the others. A blanket conversion material layer can be included on at least some of the LEDs and the submount. The encapsulant can be on the submount, over at least some of the LEDs, with each of the planar surfaces being vertical and aligned with one of the edges of the submount. The encapsulant can also have a upper curved surface with a relatively large radius of curvature, with the combination of curved and planar surfaces resulting in efficient emission of light with a relatively narrow emission profile.

Abstract: A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent materials that down-convert respective first through fourth portions of the radiation emitted by the LED to radiation having respective first through fourth peak wavelengths. The first peak wavelength is in the green color range and the second through fourth peak wavelengths are in the red color range. The second and third luminescent materials each emit light having a full-width half maximum bandwidth of at least 70 nanometers, while the fourth luminescent material emits light having a full-width half maximum bandwidth of less than 60 nanometers. Embodiments that only include three luminescent materials are also disclosed.

Abstract: Solid state light fixtures include a plurality of blue-shifted-yellow/green light emitting diode (“LED”) packages and a plurality of blue-shifted-red LED packages, where the solid state light fixture emits light having a correlated color temperature of between 1800 K and 5500 K, a CRI value of between 80 and 99, a CRI R9 value of between 15 and 75, and a Qg value of between 90 and 110 when the blue-shifted-yellow/green LED packages and the blue-shifted-red LED packages are operating at steady-state operating temperatures of at least 80° C.

Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

Abstract: Solid state light fixtures include a plurality of blue-shifted-yellow/green light emitting diode (“LED”) packages and a plurality of blue-shifted-red LED packages, where the solid state light fixture emits light having a correlated color temperature of between 1800 K and 5500 K, a CRI value of between 80 and 99, a CRI R9 value of between 15 and 75, and a Qg value of between 90 and 110 when the blue-shifted-yellow/green LED packages and the blue-shifted-red LED packages are operating at steady-state operating temperatures of at least 80° C.

Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.

Abstract: A LED lamp has a non-optically transmissive base connected to an optically transmissive enclosure. A LED assembly emits light when energized through an electrical path from the base. A portion of the heat sink and lamp electronics extend from the base and into the enclosure such that at least an upper portion of the heat sink extends into the interior volume defined by the enclosure. The LED assembly is supported on top of the heat sink such that the LEDs are disposed in the volume of the enclosure. An optic element extends over the LEDs and at least the portion of the heat sink. The size of the non-optically transmissive base of the lamp is reduced relative to the optically transmissive enclosure such that a greater ratio of optically transmissive view space to non-optically transmissive base is provided.

Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.

Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

Abstract: Solid state light fixtures include a plurality of blue-shifted-yellow/green light emitting diode (“LED”) packages and a plurality of blue-shifted-red LED packages, where the solid state light fixture emits light having a correlated color temperature of between 1800 K and 5500 K, a CRI value of between 80 and 99, a CRI R9 value of between 15 and 75, and a Qg value of between 90 and 110 when the blue-shifted-yellow/green LED packages and the blue-shifted-red LED packages are operating at steady-state operating temperatures of at least 80° C.

Abstract: A Light Emitting Diode (LED) component includes a lead frame and an LED that is electrically connected to the lead frame without wire bonds, using a solder layer. The lead frame includes a metal anode pad, a metal cathode pad and a plastic cup. The LED die includes LED die anode and cathode contacts with a solder layer on them. The metal anode pad, metal cathode pad, plastic cup and/or the solder layer are configured to facilitate the direct die attach of the LED die to the lead frame without wire bonds. Related fabrication methods are also described.

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1?x?yN, where 0?x?1 and 0?y<1 and (x+y)?1; a second n-type cladding layer of AlxInyGa1?x?yN, where 0?x?1 and 0?y<1 and (x+y)?1, wherein the second n-type cladding layer is further characterized by the substantial absence of magnesium; an active portion between the first and second cladding layers in the form of a multiple quantum well having a plurality of InxGa1?xN well layers where 0<x<1 separated by a corresponding plurality of AlxInyGa1?x?yN barrier layers where 0?x?1 and 0?y?1; a p-type layer of a Group III nitride, wherein the second n-type cladding layer is positioned between the p-type layer and the multiple quantum well; and wherein the first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of the well layers.