Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.

Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.

Abstract: A susceptor apparatus for use in a CVD reactor includes a main platter with a central gear. The main platter has opposite first and second sides, a central recess formed in the second side, and a plurality of circumferentially spaced-apart pockets formed in the first side. The central gear is positioned within the central recess and the satellite platters are individually rotatable within the respective pockets. Each pocket has a peripheral wall with an opening in communication with the central recess. The central gear teeth extend into each of the pockets via the respective wall openings and engage a planet gear associated with each satellite platter. Rotation of the main platter about its rotational axis causes the satellite platters to rotate about their individual rotational axes.

Abstract: Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 ?m is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.

Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.

Abstract: Flip chip LEDs incorporate multi-layer reflectors and light transmissive substrates patterned along an internal surface adjacent to semiconductor layers. A multi-layer reflector may include a metal layer and a dielectric layer containing conductive vias. Portions of a multi-layer reflector may wrap around a LED mesa including an active region, while being covered with passivation material. A substrate patterned along an internal surface together with a multi-layer reflector enables reduction of optical losses. A light transmissive fillet material proximate to edge emitting surfaces of an emitter chip may enable adequate coverage with lumiphoric material. An emitter chip may be elevated with increased thickness of solder material and/or contacts, and may reduce luminous flux loss when reflective materials are present on a submount.

Abstract: A Light Emitting Diode (LED) component includes a lead frame and an LED that is electrically connected to the lead frame without wire bonds, using a solder layer. The lead frame includes a metal anode pad, a metal cathode pad and a plastic cup. The LED die includes LED die anode and cathode contacts with a solder layer on them. The metal anode pad, metal cathode pad, plastic cup and/or the solder layer are configured to facilitate the direct die attach of the LED die to the lead frame without wire bonds. Related fabrication methods are also described.

Abstract: A small form factor LED lighting system provides for color-controlled dimming. Embodiments of the invention use one or more small-footprint LED(s) that can emit light of different correlated color temperatures (CCTs, colors or spectral outputs). The CCT of the fixture or bulb can change when dimmed by disproportionate adjustment of the driving power for each color. The small size and footprint of the LEDs enables use in decorative LED lamps, such as those designed to replace candelabra style incandescent bulbs. Various options can be used to tune the performance and lighting characteristics of a lamp according to embodiments of the invention, such as the use of differing LED device package optics, the use of reflective materials in and/or around LED device packages, and the use of a secondary optic to produce an omnidirectional light pattern.

Abstract: A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent materials that down-convert respective first through fourth portions of the radiation emitted by the LED to radiation having respective first through fourth peak wavelengths. The first peak wavelength is in the green color range and the second through fourth peak wavelengths are in the red color range. The second and third luminescent materials each emit light having a full-width half maximum bandwidth of at least 70 nanometers, while the fourth luminescent material emits light having a full-width half maximum bandwidth of less than 60 nanometers. Embodiments that only include three luminescent materials are also disclosed.

Abstract: A LED lamp has at least two LEDs to provide light of at least two different spectral outputs. An optic element has an entry surface disposed to receive the light from the LEDs. The entry surface includes refracting surfaces that refract the light tangentially. The refracting surfaces may extend radially relative to a center of the entry surface. The refracting surfaces may be continuously curved in cross-section where the refracting surfaces may include convex refracting surfaces and concave refracting surfaces.

Abstract: A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent.

Abstract: Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.

Abstract: Light emitting diode components are disclosed that utilize a thin, substantially flat or undomed encapsulant in order to achieve the desired emission profile to increase luminance and/or center beam candle power. Some embodiments of the devices include encapsulants, which result in an apparent source image, which does not exceed 2× the source size. Different embodiments of the present invention can comprise different configurations of emitters within the component, such as monolithic chips. The LEDs can be wire bonded to a surface. This surface can be black, reflective or include a reflective coating. In some embodiments, conversion materials can be applied conformal to the LED.

Abstract: A LED lamp has a non-optically transmissive base connected to an optically transmissive enclosure. A LED assembly emits light when energized through an electrical path from the base. A portion of the heat sink and lamp electronics extend from the base and into the enclosure such that at least an upper portion of the heat sink extends into the interior volume defined by the enclosure. The LED assembly is supported on top of the heat sink such that the LEDs are disposed in the volume of the enclosure. An optic element extends over the LEDs and at least the portion of the heat sink. The size of the non-optically transmissive base of the lamp is reduced relative to the optically transmissive enclosure such that a greater ratio of optically transmissive view space to non-optically transmissive base is provided.

Abstract: A Light Emitting Diode (LED) component includes a lead frame and an LED that is electrically connected to the lead frame without wire bonds, using a solder layer. The lead frame includes a metal anode pad, a metal cathode pad and a plastic cup. The LED die includes LED die anode and cathode contacts with a solder layer on them. The metal anode pad, metal cathode pad, plastic cup and/or the solder layer are configured to facilitate the direct die attach of the LED die to the lead frame without wire bonds. Related fabrication methods are also described.