Patents by Inventor John C. Forster
John C. Forster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11915917Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.Type: GrantFiled: June 15, 2020Date of Patent: February 27, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Alan Ritchie, John C. Forster, Muhammad Rasheed
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Patent number: 11915918Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.Type: GrantFiled: June 29, 2021Date of Patent: February 27, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Jothilingam Ramalingam, Yong Cao, Ilya Lavitsky, Keith A. Miller, Tza-Jing Gung, Xianmin Tang, Shane Lavan, Randy D. Schmieding, John C. Forster, Kirankumar Neelasandra Savandaiah
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Patent number: 11898236Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.Type: GrantFiled: October 20, 2021Date of Patent: February 13, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Zhiyong Wang, Halbert Chong, John C. Forster, Irena H. Wysok, Tiefeng Shi, Gang Fu, Renu Whig, Keith A Miller, Sundarapandian Ramalinga Vijayalakshmi Reddy, Jianxin Lei, Rongjun Wang, Tza-Jing Gung, Kirankumar Neelasandra Savandaiah, Avinash Nayak, Lei Zhou
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Patent number: 11887818Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.Type: GrantFiled: October 11, 2021Date of Patent: January 30, 2024Assignee: Applied Materials, Inc.Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela Balseanu, Keiichi Tanaka, Li-Qun Xia
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Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool
Patent number: 11823871Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.Type: GrantFiled: March 1, 2019Date of Patent: November 21, 2023Assignee: Applied Materials, Inc.Inventors: Jozef Kudela, Tsutomu Tanaka, Alexander V. Garachtchenko, Dmitry A. Dzilno, Avinash Shervegar, Kallol Bera, Xiaopu Li, Anantha K. Subramani, John C. Forster -
Publication number: 20230122956Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.Type: ApplicationFiled: October 20, 2021Publication date: April 20, 2023Inventors: Zhiyong WANG, Halbert CHONG, John C. FORSTER, Irena H. WYSOK, Tiefeng SHI, Gang FU, Renu WHIG, Keith A. MILLER, Sundarapandian Ramalinga Vijayalakshmi REDDY, Jianxin LEI, Rongjun WANG, Tza-Jing GUNG, Kirankumar Neelasandra SAVANDAIAH, Avinash NAYAK, Lei ZHOU
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Publication number: 20220415637Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.Type: ApplicationFiled: July 11, 2022Publication date: December 29, 2022Applicant: Applied Materials, Inc.Inventors: Jothilingam Ramalingam, Yong Cao, Ilya Lavitsky, Keith A. Miller, Tza-Jing Gung, Xianmin Tang, Shane Lavan, Randy D. Schmieding, John C. Forster, Kirankumar Neelasandra Savandaiah
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Publication number: 20220415636Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.Type: ApplicationFiled: June 29, 2021Publication date: December 29, 2022Applicant: Applied Materials, Inc.Inventors: Jothilingam Ramalingam, Yong Cao, Ilya Lavitsky, Keith A. Miller, Tza-Jing Gung, Xianmin Tang, Shane Lavan, Randy D. Schmieding, John C. Forster, Kirankumar Neelasandra Savandaiah
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Patent number: 11315769Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.Type: GrantFiled: January 15, 2021Date of Patent: April 26, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Kallol Bera, Anantha K. Subramani, John C. Forster, Philip A. Kraus, Farzad Houshmand, Hanhong Chen
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Patent number: 11315763Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.Type: GrantFiled: September 1, 2020Date of Patent: April 26, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Kallol Bera, Dmitry A. Dzilno, Anantha K. Subramani, John C. Forster, Tsutomu Tanaka
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Publication number: 20220028660Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.Type: ApplicationFiled: October 11, 2021Publication date: January 27, 2022Applicant: Applied Materials, Inc.Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela A. Balseanu, Keiichi Tanaka, Li-Qun Xia
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Publication number: 20210343508Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a chamber liner having a tubular body with an upper portion and a lower portion; a confinement plate coupled to the lower portion of the chamber liner and extending radially inward from the chamber liner, wherein the confinement plate includes a plurality of slots; a shield ring disposed within the chamber liner and movable between the upper portion of the chamber liner and the lower portion of the chamber liner; and a plurality of ground straps coupled to the shield ring at a first end of each ground strap of the plurality of ground straps and to the confinement plate at a second end of each ground strap to maintain electrical connection between the shield ring and the chamber liner when the shield ring moves.Type: ApplicationFiled: April 30, 2020Publication date: November 4, 2021Inventors: Andrew NGUYEN, Xue Yang CHANG, Yu LEI, Xianmin TANG, John C. FORSTER, Yogananda Sarode VISHWANATH, Abilash SAINATH, Tza-Jing GUNG
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Patent number: 11158489Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.Type: GrantFiled: November 7, 2017Date of Patent: October 26, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela Balseanu, Keiichi Tanaka, Li-Qun Xia
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Patent number: 11133155Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.Type: GrantFiled: September 23, 2019Date of Patent: September 28, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Daping Yao, Hyman W. H. Lam, John C. Forster, Jiang Lu, Can Xu, Dien-Yeh Wu, Paul F. Ma, Mei Chang
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Patent number: 11081318Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.Type: GrantFiled: December 14, 2018Date of Patent: August 3, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Kenichi Ohno, Keiichi Tanaka, Li-Qun Xia, Tsutomu Tanaka, Dmitry A. Dzilno, Mario D. Silvetti, John C. Forster, Rakesh Ramadas, Mike Murtagh, Alexander V. Garachtchenko
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Publication number: 20210210312Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.Type: ApplicationFiled: December 29, 2020Publication date: July 8, 2021Inventors: Anantha K. Subramani, Farzad Houshmand, Philip A. Kraus, Abhishek Chowdhury, John C. Forster, Kallol Bera
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Publication number: 20210166923Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.Type: ApplicationFiled: January 15, 2021Publication date: June 3, 2021Applicant: Applied Materials, Inc.Inventors: Kallol Bera, Anantha K. Subramani, John C. Forster, Philip A. Kraus, Farzad Houshmand, Hanhong Chen
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Microwave Plasma Source For Spatial Plasma Enhanced Atomic Layer Deposition (PE-ALD) Processing Tool
Publication number: 20210050187Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.Type: ApplicationFiled: March 1, 2019Publication date: February 18, 2021Applicant: Applied Materials, Inc.Inventors: Jozef Kudela, Tsutomu Tanaka, Alexander V. Garachtchenko, Dmitry A. Dzilno, Avinash Shervegar, Kallol Bera, Xiaopu Li, Anantha K. Subramani, John C. Forster -
Patent number: 10903056Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.Type: GrantFiled: May 15, 2018Date of Patent: January 26, 2021Assignee: Applied Materials, Inc.Inventors: Kallol Bera, Anantha K. Subramani, John C. Forster, Philip A. Kraus, Farzad Houshmand, Hanhong Chen
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Patent number: 10879042Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.Type: GrantFiled: January 24, 2017Date of Patent: December 29, 2020Assignee: Applied Materials, Inc.Inventors: Anantha K. Subramani, Farzad Houshmand, Philip A. Kraus, Abhishek Chowdhury, John C. Forster, Kallol Bera