Abstract: A deposition system in a semiconductor fabrication system provides a slotted grounded darkspace shield, which protects the target sidewalls. It has been found that an axial slot in the grounded darkspace shield can prevent eddy currents from flowing in the darkspace shield and thereby prevent RF power losses due to eddy currents that would otherwise flow in an unslotted darkspace shield due to RF power applied to an RF coil-shield. By preventing the RF power losses, the RF coupling efficiency of RF power applied to the RF coil-shield can also be improved.

Abstract: A shield for a DC magnetron sputtering reactor, particularly advantageous for reliably igniting the plasma used in sputtering a ferromagnetic material such as cobalt or nickel. The grounded shield includes a slanted portion separated from the beveled periphery of the target by a small gap operating as a dark space. The shield also includes a straight cylindrical portion surrounding the main processing area. The slanted portion is joined to the cylindrical portion at a knee According to one embodiment of the invention, the knee is located greater than 9 mm from the face of the target and at a radial position at least 1 mm inward of the outer periphery of the target face.

Abstract: An external inductive coil is used in a plasma process system having a dielectric shield which separates the coil from the plasma. The shield includes channels provided along the inner side of the shield facing the plasma region. The channels inhibit the formation of a continuous metal film over the inner surface of the shield during sputtering and deposition. The sidewalls defining the channels permit RF transmission after the surfaces directly facing the plasma are coated with metal.

Abstract: A method and apparatus for reducing particulates in a plasma tool using steady state flows includes a device, operatively coupled to a housing in which an object to be processed is positioned, for generating a plasma flow adjacent the object toward a pumping aperture. A pumping mechanism pumps a medium adjacent the object. The medium supports the plasma and entrains particulates in the plasma away from the object and out the pumping aperture. Magnetic fields, produced by multipole magnets forming a ring cusp, are preferably used to produce the plasma flow which is directed radially away from the object to be processed. In a second embodiment, an array of magnets which form a line cusp is provided to produce an opening through which plasma will flow.

Abstract: A method and apparatus for reducing particulates in a plasma tool using steady state flows includes a device, operatively coupled to a housing in which an object to be processed is positioned, for generating a plasma flow adjacent the object toward a pumping aperture. A pumping mechanism pumps a medium adjacent the object. The medium supports the plasma and entrains particulates in the plasma away from the object and out the pumping aperture. Magnetic fields, produced by multipole magnets forming a ring cusp, are preferably used to produce the plasma flow which is directed radially away from the object to be processed. In a second embodiment, an array of magnets which form a line cusp is provided to produce an opening through which plasma will flow.

Abstract: Apparatus and methods for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

Abstract: A non-intrusive means and method are disclosed for monitoring the interelectrode gap in a reaction chamber containing a pair of variably spaced, nominally parallel reaction-sustaining electrodes. An example is given in which the chamber is a plasma enhanced chemical vapor deposition chamber. The electrodes are treated as a parallel plate capacitor in order to measure the gap therebetween as well as the parallelism of the electrodes without requiring that the chamber be opened. A calibration curve is prepared by ascertaining known values of gaps by use of spacer gauges and then measuring and storing the corresponding values of the gaps and the capacitances. Once the calibration curve is established and stored, the spacing between the electrodes can be checked from time to time, as needed, without opening the chamber. It is only necessary to measure the capacitance existing and then refer the measured value to the stored values to read out the corresponding gap value.

Abstract: Apparatus for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

Abstract: A method for transferring a pattern through a photoresist layer in the fabrication of submicron semiconductor devices structures is disclosed. A photoresist is provided on a substrate and the same is imagewise exposed with a desired pattern to form exposed and unexposed patterned areas in the top surface of the photoresist. The photoresist is then baked to form cross-linked regions in the exposed pattern areas of the photoresist. Silylation is then performed to incorporate silicon into the unexposed patterned areas of the photoresist, wherein some incorporation of silicon occurs in the exposed patterned crosslinked areas of the photoresist. The patterned photoresist is subsequently etched using a high density, low pressure, anisotropic O.sub.2 plasma alone to produce residue-free images with vertical wall profiles in the photoresist. This method is particularly advantageous with RFI reactive ion etch systems.

Abstract: A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.

Abstract: Electron cyclotron apparatus is described in which the locus of cyclotron resonance is scanned away from and toward the axis of a magnetic field by varying the strength of the magnetic field, the frequency of electromagnetic waves passing along its axis, or both.

Abstract: An electrostatic chuck for semiconductor wafers comprised of a multilayered ceramic, including a back-side-metal layer pattern adjacent the upper wafer receiving surface for generating an electrostatic force. Intermediate via layers connect the pattern to a back-side-metal layer at the bottom of the chuck to which power leads can be connected. A number of small passages, extending from the bottom of the chuck to its upper surface, allow helium heat transfer without the need for surface grooves.

Abstract: A cylindrical plasma reaction chamber is equipped with a pair of axially separated solenoid coils and a multipole magnet structure extending between the coil pair. An axially-directed magnetic field and a transverse cusp field are respectively provided by the coils and the magnet. A working gas is contained within the chamber and is excited by applied microwave energy. The strengths of the two magnetic fields and the microwave frequency value are selected to produce a substantially closed electron cyclotron resonance (ECR) zone of proper size. This ECR zone is located axially between the solenoid fields. Baffling is used to separate the closed plasma ECR zone from the workpiece region of the chamber. A semiconductor wafer is positioned within the workpiece region to intercept most plasma particles which follow the axially directed magnetic lines passing through the ECR zone. Few of the particles from the closed ECR zone travel to destinations other than the wafer.

Abstract: A sputter deposition system includes a hollow, cylindrical sputter target 14 disposed between an end sputter target 12 and a substrate 19, all of which are contained in a vacuum chamber 20. A plurality of magnets 24 are disposed outside the chamber 24 to create intense, plasma regions 48 near the interior surface of the cylindrical target 14 and thereby causing ionization of sputtered neutrals. Rf power is inductively coupled into the chamber 24 through rf coil 16 to sustain the plasma and substrate 19 is electrically biased to control ion directionality and energy.