Abstract: A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.

Abstract: An apparatus for a physical vapor deposition system includes a target having a sidewall having an undercut thereon defining a net erosion area and a net redeposition area.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

Abstract: Capacitances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied during the deposition process so that the RF coil and substrate heating, and the film deposition, are more uniform due to “time-averaging” of the RF voltage distributions along the RF coil.

Abstract: An apparatus and method for processing workpieces, which include a chamber having a coil for inductively coupling RF energy through a dielectric window into the chamber to energize a plasma, and a shield positioned between a sputtering target and the dielectric window to reduce or eliminate deposition of sputtered material onto a portion of the dielectric window. In the illustrated embodiment, the window shield is spaced from the dielectric window to define a gap and has at least one opening, which permit RF energy to be coupled through the gap and through the window shield opening to the interior of the chamber. As a consequence, the coil may be positioned exterior to the chamber to simplify construction and operation of the chamber.

Abstract: We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 &mgr;&OHgr;cm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.

Abstract: We have discovered a method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. We have demonstrated that it is possible to increase the copper seed layer coverage simultaneously at the bottom of a high aspect ratio contact via and on the walls of the via by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. An increase in the percentage of copper species which are ionized can be achieved using techniques known in the art, including but not limited to applicants' preferred technique, an inductively coupled RF ion metal plasma.

Abstract: A method and apparatus that operates at a high pressure of at least one torr for improving sidewall coverage within trenches and vias in a substrate. The apparatus comprises a chamber enclosing a target and a pedestal, a process gas that provides a process gas in the chamber, a pump for maintaining the high pressure of at least about one torr in the chamber and a power source coupled to the target. Additionally, the distance between the target and the substrate is set to ensure that collisions between the sputtered particles and the plasma occur in the trenches and vias on the substrate. The method comprises the steps of providing a process gas into the chamber such that the gas pressure is at least about one torr, generating a plasma from the process gas, and sputtering material from the target.

Abstract: An apparatus for a physical vapor deposition system includes a target having a sidewall having an undercut thereon defining a net erosion area and a net redeposition area.

Abstract: Embodiments include devices and methods for sputtering material onto a workpiece in a chamber which includes a plasma generation area and a target. A coil is positioned to inductively couple energy into the plasma generation area to generate a plasma. A body is positioned between the workpiece and the target to prevent an amount of target material from being sputtered onto the workpiece. The body prevents an amount of target material from being sputtered onto the workpiece. The body may act as a dark space shield and inhibit plasma formation between the body and the target. The body may also act as a physical shield to block sputtered material from accumulating on the workpiece.

Abstract: We have discovered a method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. Using a contact via as an example of a high aspect ratio feature, we have demonstrated that despite previously-held views, it is possible to increase the copper seed layer coverage simultaneously at the bottom of the via and on the wall of the via by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. For features having a 0.25 &mgr;m or smaller feature size, an aspect ratio of about 3:1 requires that about 50% or more of the copper species be ions at the time of deposition on the substrate.

Abstract: A method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. Using a contact via as an example of a high aspect ratio feature, we have demonstrated that it is possible to increase the copper seed layer coverage simultaneously at both the bottom of the via and on the wall of the via . This increase is achieved by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. For features having a 0.25 &mgr;m or smaller feature size, an aspect ratio of about 3:1 requires that about 50% or more of the copper species be ions at the time of deposition on the substrate.

Abstract: Apparatus for supporting a substrate such as a semiconductor wafer in a process chamber to improve power coupling through the substrate. The apparatus contains a pedestal assembly and a pedestal cover positioned over the top surface of and circumscribing the pedestal assembly for electrically isolating the pedestal assembly. The pedestal cover reduces conductive film growth in the wafer process region. As such, RF wafer biasing power from the pedestal assembly remains coupled through the substrate during processing.

Abstract: A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.

Abstract: A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.

Abstract: In a plasma generating apparatus, RF energy applied to a coil positioned to sputter material onto a workpiece, is modulated to control the biasing of the coil. As a consequence, control of coil sputtering may be improved such that the uniformity of deposition may also be improved.